NDS-001 Rev 6, April 2013
NPT25100
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FEATURES
• Optimized for CW, pulsed, WiMAX, W-CDMA, LTE
and other applications from 2100 – 2700MHz
• 125W P3dB Peak envelope power
• 90W P3dB CW power
• 10W linear power @ 2.0% EVM for single carrier
OFDM, 10.3dB peak/avg, 10MHz channel band-
width, 16.5dB gain, 26% efciency
• Characterized for operation up to 32V
• 100% RF tested
• Thermally enhanced industry standard package
• High reliability gold metallization process
• Lead-free and RoHS compliant
• Subject to ECCN 3A982.a.1 export control
2100 – 2700 MHz
125 Watt, 28 Volt
GaN HEMT
RF Specications (CW): VDS = 28V, IDQ = 600mA, Frequency = 2500MHz, TC = 25°C, Measured in Nitronex Test Fixture
Gallium Nitride 28V, 125W RF Power Transistor
Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology
Typical 2-Tone Performance: VDS = 28V, IDQ = 600mA, Frequency = 2500MHz, Tone spacing = 1MHz, TC = 25°C
Measured in Load Pull System (Refer to Table 1 and Figure 1)
Symbol Parameter Typ Units
P3dB,PEP Peak Envelope Power at 3dB Compression 125 W
P1dB,PEP Peak Envelope Power at 1dB Compression 90 W
PIMD3 Peak Envelope Power at -35dBm IMD3 80 W
Typical OFDM Performance: VDS = 28V, IDQ = 600mA, Single carrier OFDM waveform 64-QAM 3/4, 8 burst,
continuous frame data, 10MHz channel bandwidth. Peak/Avg = 10.3dB @ 0.01% probability on CCDF.
Frequency = 2500 to 2700MHz. POUT,AVG = 10W, TC=25°C.
Symbol Parameter Typ Units
GPPower Gain 16.5 dB
hDrain Efciency 26 %
EVM Error Vector Magnitude 2.0 %
Symbol Parameter Min Typ Max Units
P3dB Average Output Power at 3dB Gain Compression 80 90 - W
GSS Small Signal Gain 14 16.5 -dB
hDrain Efciency at 3dB Gain Compression 55 62 - %
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Absolute Maximum Ratings: Not simultaneous, TC = 25°C unless otherwise noted
Symbol Parameter Min Typ Max Units
Off Characteristics
VBDS
Drain-Source Breakdown Voltage
(VGS = -8V, ID = 36mA) 100 - - V
IDLK
Drain-Source Leakage Current
(VGS = -8V, VDS = 60V) - 9 18 mA
On Characteristics
VT
Gate Threshold Voltage
(VDS = 28V, ID = 36mA) -2.3 -1.8 -1.3 V
VGSQ
Gate Quiescent Voltage
(VDS = 28V, ID = 600mA) -2.0 -1.5 -1.0 V
RON
On Resistance
(VGS = 2V, ID = 270mA) -0.13 0.14 W
ID,MAX
Drain Current
(VDS = 7V pulsed, 300ms pulse width,
0.2% duty cycle)
19.0 20.5 - A
Symbol Parameter Max Units
VDS Drain-Source Voltage 100 V
VGS Gate-Source Voltage -10 to 3 V
IGGate Current 180 mA
PTTotal Device Power Dissipation (Derated above 25°C) 100 W
TSTG Storage Temperature Range -65 to 150 °C
TJOperating Junction Temperature 200 °C
HBM Human Body Model ESD Rating (per JESD22-A114) 2 (>2000V)
MM Machine Model ESD Rating (per JESD22-A115) M2 (>100V)
DC Specications: TC = 25°C
Symbol Parameter Min Typ Max Units
Off Characteristics
VBDS
Drain-Source Breakdown Voltage
(VGS = -8V, ID = 36mA) 100 - - V
IDLK
Drain-Source Leakage Current
(VGS = -8V, VDS = 60V) - 9 18 mA
On Characteristics
VT
Gate Threshold Voltage
(VDS = 28V, ID = 36mA) -2.3 -1.8 -1.3 V
VGSQ
Gate Quiescent Voltage
(VDS = 28V, ID = 700mA) -2.0 -1.5 -1.0 V
RON
On Resistance
(VGS = 2V, ID = 270mA) -0.13 0.14 W
ID,MAX
Drain Current
(VDS = 7V pulsed, 300ms pulse width,
0.2% duty cycle)
-21.0 - A
Symbol Parameter Min Typ Max Units
qJC
Thermal Resistance (Junction-to-Case),
TJ = 145 °C -1.75 - °C/W
Thermal Resistance Specication
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NPT25100
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ZS is the source impedance
presented to the device.
ZL is the load impedance
presented to the device.
Table 1: Optimum Source and Load Impedances for CW Gain, Drain Efciency, and Output Power Performance,
VDS = 28V, IDQ = 600mA
Frequency (MHz) ZS (W)ZL (W)
2140 12.1 - j20.0 2.6 - j2.6
2300 10.0 - j3.0 2.5 - j2.3
2400 9.5 - j3.0 2.5 - j2.5
2500 9.0 - j3.0 2.5 - j2.7
2600 8.5 - j3.0 2.5 - j3.1
2700 8.0 - j3.0 2.5 - j3.3
Figure 1 - Optimal Impedances for CW Performance, VDS = 28V, IDQ = 600mA
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Figure 5 - Typical CW and PEP Performance in
Load-Pull System,
VDS = 28V, IDQ = 600mA,
Frequency = 2500MHz, Tone Spacing = 1MHz
Figure 2 - Typical CW Performance in Load-Pull
System, VDS = 28V, IDQ = 600mA,
Frequency = 2300 to 2700MHz
Figure 3 - Typical CW Performance in Load-Pull
System, VDS
= 28V & 32V, IDQ = 600mA,
Frequency = 2500MHz
,
Impedances Held Constant
Figure 4 - Typical CW Performance
in Load Pull System,
VDS = 28V, IDQ = 600mA
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Figure 6 - Typical IMD3 Performance in
Load-Pull System, VDS
= 28V, IDQ = 600mA,
Frequency = 2500MHz,
Tone Spacing = 1MHz
Figure 7 - Typical CW, PEP, and Pulsed Performance
in Load-Pull System, Pulse Width = 10ms,
Duty Cycle = 1%, VDS
= 28V, IDQ = 600mA,
Frequency = 2500MHz,
Tone Spacing = 1MHz
Figure 8 - Typical Pulsed CW Performance in
Load-Pull System, 1% Duty Cycle, VDS = 28V,
IDQ = 600mA, Frequency = 2500MHz
Figure 9 - Typical OFDM Performance in
Load-Pull System, VDS = 28V & 32V,
IDQ = 600mA, Frequency = 2500MHz
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Figure 10 - Typical OFDM Performance in
Load-Pull System, POUT, AVG = 10W,
VDS = 28V, IDQ = 600mA
Figure 13 - Typical W-CDMA Performance in
Load-Pull System, VDS = 28V, IDQ = 600mA,
Frequency = 2110 to 2170MHz
Figure 11 - Typical LTE (Long Term Evolution, 20MHz
channel), Nitronex Test Fixture, VDS
= 28V,
IDQ = 600mA, Frequency = 2600MHz
Figure 12 - OFDM Performance in Nitronex
Test Fixture as a Function of IDQ, VDS = 28V,
IDQ = 500 to 1000mA, Frequency = 2500MHz
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Figure 14 - OFDM performance in Nitronex Test
Fixture as a
Function of IDQ,
VDS
= 28V,
IDQ = 500mA to 1000mA,
Frequency = 2500MHz
Figure 15 - OFDM performance in Nitronex
Test Fixture as a
Function of Case Temperature,
VDS
= 28V, IDQ = 600mA,
Frequency = 2500MHz
Figure 16 - S-parameters Measured in Nitronex
Test Fixture, VDS = 28V, IDQ = 600mA
Figure 17 - Quiescient Gate Voltage (VGSQ) Required
to Reach IDQ as a Function of Case Temperature,
Measured in Nitronex Test Fixture at VDS = 28V
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Figure 18 - Power Derating Curve Figure 19 - MTTF of NRF1 Devices as a
Function of Junction Temperature
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Figure 20 - APP-NPT25100-25 2500MHz Demonstration Board
VGS
VIN VOUT
VDS
C9 C10
C5
C6
C7
C8
R1
R2
PA1
C11
C12
C13 C14
C15
C16
C4
C3
C2
C1
NITRONEX
CORPORATION
NBD-019_Rev2
RFIN RFOUT
VGS VDS
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Figure 21 - APP-NPT25100-25 2500MHz Demonstration Board Equivalent Circuit
Name Value Tolerance Vendor Vendor Number
C1 3.3pF +/- 0.1pF ATC ATC600F3R3B
C2 1.2pF +/- 0.1pF ATC ATC100B1R 2BT
C3 1uF 20% Panasonic ECJ-5YB2A105M
C4 0.1uF 10% Kemet C1206C104K1RACTU
C5 0.01uF 10% AVX 12061C103 K AT2 A
C6 1uF 10% Panasonic ECJ-5YB2A105M
C7 0.1uF 10% Kemet C1206C104K1RACTU
C8 0.01uF 10% AVX 12061C103 K AT2 A
C9 150uF 20% Nichicon UPW1C151MED
C10 270uF 20% United Chmi-Con ELXY630ELL271MK25S
C11 33pF 5% ATC ATC600F330B
C12 33pF 5% ATC ATC600F330B
C13 0.9pF +/- 0.1pF ATC ATC600F0R9B
C14 1.8pF +/- 0.1pF ATC ATC600F1R8B
C15 Do Not Place
C16 0.8pF +/- 0.1pF ATC ATC600F0R8B
PA1 -- -- -- NPT25100B
R1 10 ohm 1% Panasonic ERJ-6ENF10R0V
R2 0.033 ohm 1% Panasonic ERJ-6RQFR33V
NBD-019_Rev2 -- -- Alberta Printed Circuits NBD-019_Rev2
Substrate Rogers R04350, t = 30mil er = 3.5
Table 2: APP-NPT25100-25 2500MHz Demonstration Board Bill of Materials
VGS
RFIN
RFOUT
VDS
1SCH-019
APP-NPT25100-25 Schematic
R. Sadler 10/6/2007
10/6/2007
B
SIZE:
R. Sadler
NA
SCALE:
Nit ronex Corporation
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REV:
DRAWN: DATED:
DATED:CHECKED:
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TITLE:
DRAWING NO:
SHEET: OF
REVISION RECORD
APPROVED:ECO NO:
A
B
D
DATE:
123456
D
C
A
B
C
LTR
N ITRON EX
C O R P O R A T I O N
C1
3. 3pF
0805
R1
10
0805
C4
0. 1uF
1206
C3
1uF
1812
C2
1. 0pF
0805
TL1
207mils
610mils
TL5
580mils
410mils
C6
1uF
1812
C7
0. 1uF
1206
C5
0. 01uF
1206
C8
0. 01uF
1206
C13
0. 9pF
0805
C15
. 8pF
0805
TL6
200mils
65mils
TL7
300mils
65mils
TL2
168mils
65mils
C12
12pF
0805
S
D
G
PA1
NPT25100
+
C9
150uF
+
C10
270uF
R2
0. 33
0805
C11
12pF
0805
C16
1. 0pF
0805
C14
1. 8pF
0805
VGS
VDS
RFIN
RFOUT
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Figure 22 - AC780B-2 Metal-Ceramic Package Dimensions and Pinout (all dimensions are in inches [mm])
Ordering Information1
Part Number Description
NPT25100B NPT25100 in AC780B-2 Metal-Ceramic Bolt-Down Package
NPT25100P NPT25100 in AC780P-2 Metal-Ceramic Pill Package
1: To nd a Nitronex contact in your area, visit our website at http://www.nitronex.com
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Figure 23 - AC780P-2 Metal-Ceramic Package Dimensions and Pinout (all dimensions are in inches [mm])
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Nitronex, LLC
2305 Presidential Drive
Durham, NC 27703 USA
+1.919.807.9100 (telephone)
+1.919.807.9200 (fax)
info@nitronex.com
www.nitronex.com
Additional Information
This part is lead-free and is compliant with the RoHS directive
(Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment).
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www.nitronex.com.
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accordance with Nitronex standard warranty. Testing and other quality control techniques are used to the extent Nitronex
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