BAW56N3 - CYStech Electronics Corp.

CYStech Electronics Corp.

Spec. No. : C303N3A

Issued Date : 2003.04.12

Revised Date

Page No. : 1/4

BAW56N3 CYStek Product Specification

High –speed double diode

BAW56N3

Description

The BAW56N3 consists of two high-speed switching diodes with common anodes, fabricated in planar

technology, and encapsulated in a small SOT-23 plastic SMD package.

Equivalent Circuit

Features

• Small plastic SMD package

• High switching speed: max. 4ns

• Continuous reverse voltage: max. 75V

• Repetitive peak reverse voltage: max. 85V

• Repetitive peak forward current: max. 450mA.

Applications

• High-speed switching in thick and thin-film circuits.

SOT-23

BAW56N3

1

2

3

1：Cathode

2：Cathode

3：Common Anode

Cathode Cathode

Common Anode

CYStech Electronics Corp.

Spec. No. : C303N3A

Issued Date : 2003.04.12

Revised Date

Page No. : 2/4

BAW56N3 CYStek Product Specification

Absolute Maximum Ratings @TA=25℃

Parameters Symbol Min Max Unit

Repetitive peak reverse voltage VRRM - 85 V

Continuous reverse voltage VR - 75 V

Continuous forward current(single diode loaded) - 215

Continuous forward current(double diode loaded) IF - 125

mA

Repetitive peak forward current IFRM 450 mA

Non-repetitive peak forward current

@square wave, Tj=125℃ prior to surge t=1µs

t=1ms

t=1s

IFSM

-

4

1

0.5

A

Total power dissipation(Note 1) Ptot 250 mW

Junction Temperature Tj - 150

°C

Storage Temperature Tstg -65 +150

°C

Note 1: Device mounted on an FR-4 PCB.

Electrical Characteristics @ Tj=25℃ unless otherwise specified

Parameters Symbol Conditions Min Typ. Max Unit

Forward voltage VF

IF=1mA

IF=10mA

IF=50mA

IF=150mA

- -

715

855

1

1.25

mV

V

Reverse current IR

VR=25V

VR=75V

VR=25V,Tj=150℃

VR=75V,Tj=150℃

- -

30

1

30

50

nA

µA

Diode capacitance Cd VR=0V, f=1MHz - - 2 pF

Reverse recovery time trr

when switched from IF=10mA to

IR=10mA,RL=100Ω, measured

at IR=1mA

- - 4 ns

Forward recovery voltage Vfr when switched from IF=10mA

tr=20ns - - 1.75 V

Thermal Characteristics

Symbol Parameter Conditions Value Unit

Rth,j-tp thermal resistance from junction to tie-point 360 ℃/W

Rth, j-a thermal resistance from junction to ambient Note 1 500 ℃/W

Note 1: Device mounted on an FR-4 PCB.

CYStech Electronics Corp.

Spec. No. : C303N3A

Issued Date : 2003.04.12

Revised Date

Page No. : 3/4

BAW56N3 CYStek Product Specification

Characteristic Curves

Forward Current vs Ambient Temperature

0

25

50

75

100

125

150

175

200

225

250

0 50 100 150 200

Ambient Temperature---Ta(℃)

Forward Current---IF(mA)

single diode loaded

double diode loaded

Forward Current vs Forward Voltage

0

25

50

75

100

125

150

175

200

225

250

275

0 0.2 0.4 0.6 0.8 1 1.2 1.4

Forward Voltage---VF(V)

Forward Current---IF(m

A)

Non-repetitive peak forward

current vs pulse duration

0.1

1

10

100

1 10 100 1000 10000

Pulse Duration---tp(μs)

Non-repetitive peak forward

current---IFSM(A)

Diode Capacitance vs Reverse Voltage

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0 2 4 6 8 10 12 14 16

Reverse Voltage---VR(V)

Diode Capacitance---CD(pF)

CYStech Electronics Corp.

Spec. No. : C303N3A

Issued Date : 2003.04.12

Revised Date

Page No. : 4/4

BAW56N3 CYStek Product Specification

SOT-23 Dimension

*: Typical

Inches Millimeters Inches Millimeters

DIM Min. Max. Min. Max.

A 0.1102 0.1204 2.80 3.04 J 0.0034 0.0070 0.085 0.177

B 0.0472 0.0630 1.20 1.60 K 0.0128 0.0266 0.32 0.67

C 0.0335 0.0512 0.89 1.30 L 0.0335 0.0453 0.85 1.15

D 0.0118 0.0197 0.30 0.50 S 0.0830 0.1083 2.10 2.75

G 0.0669 0.0910 1.70 2.30 V 0.0098 0.0256 0.25 0.65

H 0.0005 0.0040 0.013 0.10

Notes: 1.Controlling dimension: millimeters.

2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.

3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.

Material:

• Lead: 42 Alloy ; solder plating

• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0

Important Notice:

• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.

• CYStek reserves the right to make changes to its products without notice.

• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.

• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.

HJ

K

D

A

L

G

V

C

B

3

2

1

S

Style: Pin 1.Cathode 2.Cathode

3.Common Anode

Marking:

TE

3-Lead SOT-23 Plastic

Surface Mounted Package

CYStek Package Code: N3

A1