Preliminary Datasheet RJH1CF6RDPQ-80 Silicon N Channel IGBT High Speed Power Switching R07DS0356EJ0100 Rev.1.00 May 12, 2010 Features * * * * Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 30 A, VGE = 15V, Tj = 25C) * Gate to emitter voltage rating 30 V * Pb-free lead plating Outline RENESAS Package code: PRSS0003ZE-A (Package name: TO-247) C 4 1. Gate 2. Collector 3. Emitter 4. Collector G 1 2 E 3 Absolute Maximum Ratings (Tc = 25C) Item Collector to emitter voltage Gate to emitter voltage Collector current Tc = 25C Tc = 100C Collector peak current Symbol VCES VGES IC IC ic(peak) Note1 Ratings 1200 30 55 30 100 Unit V V A A A Collector to emitter diode forward current Collector dissipation Junction to case thermal impedance Junction temperature Storage temperature iDF PC j-c Tj Tstg 20 227.2 0.55 150 -55 to +150 A W C/W C C Notes: 1. Pulse width limited by safe operating area. R07DS0356EJ0100 Rev.1.00 May 12, 2010 Page 1 of 6 RJH1CF6RDPQ-80 Preliminary Electrical Characteristics (Tj = 25C) Item Zero gate voltage collector current Gate to emitter leak current Gate to emitter cutoff voltage Collector to emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Switching time C-E diode forward voltage Symbol ICES IGES VGE(off) VCE(sat) Cies Coes Cres td(on) tr td(off) tf VF Min 3.5 Typ 5.0 1.8 2.3 2520 50 40 51 65 134 275 3.0 Max 100 1 7.0 2.3 3.9 Unit A A V V V pF pF pF ns ns ns ns V Test Conditions VCE = 1200 V, VGE = 0 VGE = 30 V, VCE = 0 VCE = 10V, IC = 1 mA IC = 30 A, VGE = 15V Note2 IC = 55 A, VGE = 15V Note2 VCE = 25 V VGE = 0 V f = 1 MHz IC = 30 A VCE = 600 V, VGE = 15 V Rg = 5 Note2 Resistive Load IF = 10 A Note2 Notes: 2. Pulse test R07DS0356EJ0100 Rev.1.00 May 12, 2010 Page 2 of 6 RJH1CF6RDPQ-80 Preliminary Main Characteristics Maximum Safe Operation Area Typical Output Characteristics 100 Collector Current IC (A) PW = 10 s 100 10 1 0.1 0.01 1 80 8.2 V 9V 10 V 8V 15 V 60 7.8 V 20 V 7.6 V 40 7.4 V 7.2 V VGE = 7 V 20 100 1000 1 0 10000 2 3 4 5 Collector to Emitter Voltage VCE (V) Collector to Emitter Voltage VCE (V) Typical Transfer Characteristics Collector to Emitter Saturation Voltage vs. Gate to Emitter Voltage (Typical) VCE = 10 V Pulse Test 60 40 Tc = 75C 25C 20 -25C 0 0 2 4 6 8 5 Ta = 25C Pulse Test 4 IC = 100 A 3 55 A 30 A 2 1 6 10 8 5 4 IC = 100 A 3 55 A 30 A 2 1 VGE = 15 V Pulse Test 0 -25 0 25 50 75 100 125 150 Junction Temparature Tj (C) R07DS0356EJ0100 Rev.1.00 May 12, 2010 Gate to Emitter Cutoff Voltage VGE(off) (V) Collector to Emitter Saturation Voltage vs. Junction Temparature (Typical) 10 12 14 16 18 20 Gate to Emitter Voltage VGE (V) Gate to Emitter Voltage VGE (V) Collector to Emitter Saturation Voltage VCE(sat) (V) 8.4 V 0 10 80 Collector Current IC (A) Ta = 25C Pulse Test Tc = 25C Single pulse Collector to Emitter Saturation Voltage VCE(sat) (V) Collector Current IC (A) 1000 Gate to Emitter Cutoff Voltage vs. Junction Temparature (Typical) 10 8 IC = 10 mA 6 4 1 mA 2 VCE = 10 V Pulse Test 0 -25 0 25 50 75 100 125 150 Junction Temparature Tj (C) Page 3 of 6 RJH1CF6RDPQ-80 Preliminary Typical Capacitance vs. Collector to Emitter Voltage Forward Current vs. Forward Voltage (Typical) 10000 VGE = 0 V Ta = 25C Pulse Test 25 Cies Capacitance C (pF) Forward Current IF (A) 30 20 15 10 100 Coes 10 1 0 2 4 6 0 8 50 100 150 200 250 300 Collector to Emitter Voltage VCE (V) Dynamic Input Characteristics (Typical) Switching Characteristics (Typical) (1) 16 VGE VCE 600 12 VCC = 600 V 300 V 400 8 200 0 4 VCC = 600 V 300 V 0 40 80 IC = 30 A Ta = 25C 120 160 0 200 1000 tf Switching Time t (ns) 800 Gate to Emitter Voltage VGE (V) C-E Diode Forward Voltage VECF (V) td(off) 100 td(on) tr 10 VCC = 600 V, VGE = 15 V Rg = 5 , Ta = 25C, Resistive load 1 1 10 Gate Charge Qg (nC) 100 Collector Current IC (A) Switching Characteristics (Typical) (2) Switching Characteristics (Typical) (3) 1000 3000 VCC = 600 V, VGE = 15 V IC = 30 A, Ta = 25C, Resistive load Switching Time t (ns) Switching Time t (ns) Cres VGE = 0 V f = 1 MHz Ta = 25C 5 0 Collector to Emitter Voltage VCE (V) 1000 1000 tf td(off) 100 tf td(off) 100 tr td(on) tr td(on) 10 3 1 10 Gate Resistance Rg () R07DS0356EJ0100 Rev.1.00 May 12, 2010 100 VCC = 600 V, VGE = 15 V IC = 30 A, Rg = 5 , Resistive load 0 25 50 75 100 125 150 175 Case Temperature Tc (C) Page 4 of 6 RJH1CF6RDPQ-80 Preliminary Normalized Transient Thermal Impedance s (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25C D=1 1 0.5 0.3 0.2 0.1 j - c(t) = s (t) * j - c j - c = 0.55 C/W, Tc = 25 C 0.1 0.05 0.02 0.03 PDM D= 1 shot pulse PW T 0.01 0.01 10 100 PW T 1m 10 m Pulse Width 100 m 10 1 PW (s) Switching Time Test Circuit Waveform Ic Monitor 90% RL Vin Vin Monitor 10% 90% Rg D.U.T. Vin = 15 V VCC Ic 10% 10% td(on) tr ton R07DS0356EJ0100 Rev.1.00 May 12, 2010 90% td(off) tf toff Page 5 of 6 RJH1CF6RDPQ-80 Preliminary Package Dimensions JEITA Package Code RENESAS Code PRSS0003ZE-A Previous Code MASS[Typ.] 6.0g Unit: mm 3.60 0.1 5.02 0.19 15.94 0.19 17.63 4.5 max 20.19 0.38 21.13 0.33 6.15 Package Name TO-247 5.45 0.1 2.10 +- 0.2 13.26 1.27 0.13 5.45 0.71 0.1 2.41 Ordering Information Orderable Part Number RJH1CF6RDPQ-80-T2 R07DS0356EJ0100 Rev.1.00 May 12, 2010 Quantity 450 pcs Shipping Container Box (Tube) Page 6 of 6 Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. 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