©2002 Fairchild Semiconductor Corporation Rev. A, July 2002
BSR16
PNP Epitaxial Si licon Transistor
Absolute Maximum Ratings* Ta=25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Symbol Parameter Value Units
VCEO Collector-Emitter Voltage -60 V
VCBO Collector-Base Voltage -60 V
VEBO Emitter-Base Voltage -5.0 V
ICCollector Current - Continuous -800 mA
TJ, TST Operating and Storage Junction Temperature Range -55 ~ +150 °C
BSR16
PNP General Purpose Amplifier
• This device designed for use as general purpose amplifier and
switches requiring collector currents to 500mA.
• Sourced from Process 63.
• See BCW68G for Characteristics.
SOT-23
1. Base 2. Emitter 3. Collector
1
2
3
Mark: T8
©2002 Fairchild Semiconductor Corporation Rev. A, July 2002
BSR16
Electrical Characteristics Ta=25°C unless otherwise noted
Thermal Charac teris tics TA=25°C unless otherwise noted
* Device mounted on FR-4 PCB 40mm × 40mm × 1.5mm
Symbol Parameter Test Condition Min. Typ. Max. Units
Off Characteristics
BV(BR)CEO Collector-Emitter Breakdown Voltage IC = -10mA, IB = 0 -60 V
BV(BR)CBO Collector-Base Breakdown Voltage IC = -100µA, IE = 0 -60 V
BV(BR)EBO Emitter-Base Breakdown Voltage IE = -10µA, IC = 0 -5.0 V
ICBO Collect or Cut-off Current VCB = -50V
VCB = -50V, TA = 150°C-10
-10 nA
µA
ICEX Collector Cut-off Current VCE = -30V, VEB = -0.5V -50 nA
IBEX Reverse Base Current VCE = -30V, VEB = -3.0V -50 nA
On Characteristics
hFE DC Current Gain IC = -0.1mA, VCE = -10V
IC = -1.0mA, VCE = -10V
IC = -10mA, VCE= -10V
IC = -150mA, VCE = -10V
IC = -500mA, VCE = -10V
75
100
100
100
50 300
VCE(sat) Collector-Emitter Saturation Voltage I C = -150mA, IB = -15mA
IC = -500mA, IB = -50mA -0.4
-1.6 V
V
VBE(sat) Base-Emitter Saturation Voltage IC = -150mA, IB = -15mA
IC = -500mA, IB = -50mA -1.3
-2.6 V
V
Small Signal Characteristics
fTCurrent Gain Bandwidth Product IC = -50mA, VCE = -20V,
f = 100MHz, T A = 25°C200 MHz
Ccb Output Capacitance VCB = -10V, IE = 0, f = 1.0MHz 8.0 pF
Ceb Emitter-Base Capacitance VCB = -2.0V, IE = 0, f = 1.0MHz 30 pF
Switching Characteristics
ton Tu rn-On Time V CC = -30V, IC = -150mA,
IB1 = -15mA 45 ns
tdDelay Time 10 ns
trRise Time 40 ns
toff Turn- Off Time VCC = -30V, IC = -150mA,
IB1 = IB2 = -15mA 100 ns
tsStorage Time 80 ns
tfFall Time 30 ns
Symbol Parameter Max. Units
PDTotal Device Dissipation
Derate above 25°C350
2.8 mW
mW/°C
RθJA Thermal Resistance, Junction to Ambient 357 °C/W
BSR16
Package Dimensions
0.96~1.14
0.12
0.03~0.10
0.38 REF
0.40 ±0.03
2.90 ±0.10
0.95 ±0.03 0.95 ±0.03
1.90 ±0.03 0.508REF
0.97REF 1.30 ±0.10 0.45~0.60
2.40 ±0.10
+0.05
–0.023
0.20 MIN
0.40 ±0.03
SOT-23
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A, July 2002
©2002 Fairchild Semiconductor Corporation Rev. H7
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device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconduct or reserv es the right to make
changes at any time without notice in order to improve
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No Identification Needed Full Production This datasheet contains final specifications. Fairchild
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