TECHNICAL DATA
NPN SILICON LOW POWER TRANSISTOR
Qualified per MIL-PRF-19500/313
Devices Qualified Level
2N2432
2N2432A
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings Symbol 2N2432 2N2432A Unit
Collector-Emitter Voltage VCEO 30 45 Vdc
Collector-Base Voltage VCBO 30 45 Vdc
Emitter-Collector Voltage VECO 15 18 Vdc
Collector Current IC 100 mAdc
Total Power Dissipation @ TA = +250C (1)
@ TC = +250C (2) PT 300
600 mW
mW
Operating & Storage Junction Temp. Range Tstg
TJ -65 to +200
-65 to +175
0C
0C
THERMAL CHARACTERISTICS
Characteristics Symbol Max. Unit
Thermal Resistance, Junction-to-Case RθJC 0.25 mW/ 0C
1) Derate linearly 2.0 mW/0C above TA > +250C
2) Derate linearly 4.0 mW/0C above TC > +250C
TO- 18*
(TO-206AA)
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Emitter-Collector Breakdown Voltage
IE = 100 µAdc, IB = 0 2N2432
2N2432A
IE = 10 mAdc, IB = 0 Both
V(BR)ECO
15
18
10
Vdc
Collector-Emitter Breakdown Current
IC = 10 mAdc 2N2432
2N2432A V(BR)CEO
30
45
Vdc
Collector-Emitter Cutoff Current
VCB = 25 Vdc 2N2432
VCB = 40 Vdc 2N2432A ICES
10
10 ηAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
2N2432, 2N2432A JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS (con’t)
Collector-Emitter Cutoff Current
VCB = 30 Vdc 2N2432
VCB = 25 Vdc 2N2432
VCB = 40 Vdc 2N2432A
VCB = 45 Vdc 2N2432A
ICBO
100
10
100
10
µAdc
ηAdc
µAdc
ηAdc
Emitter-Collector Cutoff Current
VEC = 15 Vdc, VBC = 0 Vdc IECS 2.0 ηAdc
Emitter-Base Cutoff Current
VEB = 15 Vdc IEBO 2.0 ηAdc
ON CHARACTERISTICS (1)
Forward-Current Transfer Ratio
IC = 10 µAdc, VCE = 5.0 Vdc
IC = 1.0 mAdc, VCE = 5.0 Vdc hFE
30
80
400
Forward-Current Transfer Ratio (Inverted Connection)
IC = 0.2 mAdc, VCE = 5.0 Vdc 2N2432
2N2432A hFE(inv)
2.0
3.0
Collector-Emitter Saturation Voltage
IC = 10 Vdc, IB = 0.5 mAdc VCE(sat) 0.15 mVdc
Emitter-Collector Offset Voltage
IE = 0 mAdc, IB = 200 µAdc 2N2432
2N2432A
IE = 0 mAdc, IB = 1.0 mAdc 2N2432
2N2432A
VEC(ofs)
0.5
0.4
0.1
0.7
mVdc
DYNAMIC CHARACTERISTICS
Forward Current Transfer Ratio
IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 20 MHz hfe 2.0 10
Output Capacitance
VCB = 0 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz Cobo 12 pF
Input Capacitance
VEB = 0 Vdc, IC = 0, 100 kHz ≤ f ≤ 1.0 MHz Cibo 12 pF
(1) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
