_- FAIRCHILD SEMICONDUCTOR 1 ENROL Ime NONI HNE A enema A Le ented PT PAecne A Schlumberger Company , e BV..,200 V (MIN) FOH400 ... 150 V (MIN) FOH444 @ Ve... 1.1 V (MAX) @ 300 mA FDH400 @ 200 mA FDH444 ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures . Storage Temperature Range Max Junction Operating Temperature ) . By DE fp 3455674 g027334 & Tr FDH400/FDLL400 ~~. FDH444/FDLL444 - - High Voltage General = Purpose Diodes T- 01-09 . PACKAGES . . FDH400 - po-35 FDH444 " po-35 ; FDLL400 ~ LL-34 _ LL-34 FDLL444 If you need this device in the 65C to +200C SOT package, an electical 4175C - equivalent is available. See Lead Temperature - +260C . . . P . FDSO1400 family. Power Dissipation (Note 2) - . : : > Maximum Total Dissipation at 25C Ambient 500 mW Linear Derating Factor (from 25C) - . 3.33 mW/C . Maximum Voltage and Currents . oT FDH400 FDH444 wiv Working Inverse Voltage . 175V 125 V lo - Average Rectified Current . 200 mA 200 mA a IF Forward Current Steady State 500 mA 500 mA ig Recurrent Peak Forward Current ~ 600 mA 600 mA if(surge) Peak Forward Surge Current Pulse width = 1.0s TOA 10A Pulse width = 1.0 us 4.0A ELECTRICAL CHARACTERISTICS (25C Ambient 4.0A Temperature unless otherwise noted) FDH400 FDH444 SYMBOL CHARACTERISTIC UNITS TEST CONDITIONS MIN MAX MIN MAX VE Forward Voltage 14 1.2 Vv lf = 300 mA 1.0 1.41 Vv Ip = 200 mA BV Breakdown Voltage 200 150 Vv IR = 100 vA IR Reverse Current 100 nA VR= 150 V 50 nA VR = 100V 100 BA Va = 160 V, Ta = 150C 100 wA | VR = 100 V, Ta = 150C Cc Capacitance 2.0 . 25 pF VR = 0, f = 1.0 MHz ter Reverse Recovery Time 50 60 ns lg = 80 mA, |p = 830 mA RL = 100 9, Ip = 3.0 mA NOTES: 1. The maximum ratings are limiting values above which life or sati 2. These are steady state limite, The factory ahould ba consulted on Applications involving 3. For product family characteristic curves, reter to Chapter 4, D1. isfactory performance may be Impaired. pulsed or low duty cycle operations. 1 eres tae rere ehh aw ee toe eerie meee mt ee rt