TLC27M4, TLC27M4A, TLC27M4B, TLC27M4Y, TLC27M9
LinCMOS PRECISION QUAD OPERATIONAL AMPLIFIERS
SLOS093C – OCTOBER 1987 – REVISED MAY 1999
1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
D
Trimmed Offset Voltage:
TLC27M9...900 µV Max at TA = 25°C,
VDD = 5 V
D
Input Offset Voltage Drift...Typically
0.1 µV/Month, Including the First 30 Days
D
Wide Range of Supply Voltages Over
Specified Temperature Range:
0°C to 70°C...3 V to 16 V
–40°C to 85°C...4 V to 16 V
–55°C to 125°C...4 V to 16 V
D
Single-Supply Operation
D
Common-Mode Input Voltage Range
Extends Below the Negative Rail (C-Suffix,
I-Suffix Types)
D
Low Noise...Typically 32 nV/√Hz
at f = 1 kHz
D
Low Power...Typically 2.1 mW at
TA=25°C, VDD = 5 V
D
Output Voltage Range Includes Negative
Rail
D
High Input Impedance...10
12 Ω Typ
D
ESD-Protection Circuitry
D
Small-Outline Package Option Also
Available in Tape and Reel
D
Designed-In Latch-Up Immunity
description
The TLC27M4 and TLC27M9 quad operational
amplifiers combine a wide range of input offset
voltage grades with low offset voltage drift, high
input impedance, low noise, and speeds
comparable to that of general-purpose bipolar
devices.These devices use Texas Instruments
silicon-gate LinCMOS technology, which
provides offset voltage stability far exceeding the
stability available with conventional metal-gate
processes.
The extremely high input impedance, low bias
currents, make these cost-effective devices ideal
for applications that have previously been
reserved for general-purpose bipolar products,
but with only a fraction of the power consumption.
Copyright 1998, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
6000–600 1200–1200
N Package
TA = 25°C
VDD = 5 V
301 Units Tested From 2 Wafer Lots
Percentage of Units – %
VIO – Input Offset Voltage – µV
DISTRIBUTION OF TLC27M9
INPUT OFFSET VOLTAGE
40
35
30
25
20
15
10
5
0
1
2
3
4
5
6
7
14
13
12
11
10
9
8
1OUT
1IN–
1IN+
VDD
2IN+
2IN–
2OUT
4OUT
4IN–
4IN+
GND
3IN+
3IN–
3OUT
D, J, N, OR PW PACKAGE
(TOP VIEW)
3212019
910111213
4
5
6
7
8
18
17
16
15
14
4IN+
NC
GND
NC
3IN+
1IN+
NC
VDD
NC
2IN+
FK PACKAGE
(TOP VIEW)
1IN –
1OUT
NC
3OUT
3IN – 4OUT
4IN –
2IN –
2OUT
NC
NC – No internal connection
LinCMOS is a trademark of Texas Instruments Incorporated.
TLC27M4, TLC27M4A, TLC27M4B, TLC27M4Y, TLC27M9
LinCMOS PRECISION QUAD OPERATIONAL AMPLIFIERS
SLOS093C – OCTOBER 1987 – REVISED MAY 1999
2POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
description (continued)
Four offset voltage grades are available (C-suffix and I-suffix types), ranging from the low-cost TLC27M4 (10
mV) to the high-precision TLC27M9 (900 µV). These advantages, in combination with good common-mode
rejection and supply voltage rejection, make these devices a good choice for new state-of-the-art designs as
well as for upgrading existing designs.
In general, many features associated with bipolar technology are available on LinCMOS operational
amplifiers, without the power penalties of bipolar technology. General applications such as transducer
interfacing, analog calculations, amplifier blocks, active filters, and signal buffering are easily designed with the
TLC27M4 and TLC27M9. The devices also exhibit low voltage single-supply operation, and low power
consumption, making them ideally suited for remote and inaccessible battery-powered applications. The
common-mode input voltage range includes the negative rail.
A wide range of packaging options is available, including small-outline and chip-carrier versions for high-density
system applications.
The device inputs and outputs are designed to withstand –100-mA surge currents without sustaining latch-up.
The TLC27M4 and TLC27M9 incorporate internal ESD-protection circuits that prevent functional failures at
voltages up to 2000 V as tested under MIL-STD-883C, Method 3015; however, care should be exercised in
handling these devices, as exposure to ESD may result in the degradation of the device parametric
performance.
The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized
for operation from –40°C to 85°C. The M-suffix devices are characterized for operation over the full military
temperature range of –55°C to 125°C.
AVAILABLE OPTIONS
PACKAGE
CHIP
TAVIOmax
AT 25°CSMALL
OUTLINE
(D)
CHIP
CARRIER
(FK)
CERAMIC
DIP
(J)
PLASTIC
DIP
(N)
TSSOP
(PW)
CHIP
FORM
(Y)
900 µV TLC27M9CD — — TLC27M9CN — —
0
°
Cto70
°
C
2 mV TLC27M4BCD — — TLC27M4BCN — —
0°C
to
70°C
5 mV TLC27M4ACD — — TLC27M4ACN — —
10 mV TLC27M4CD — — TLC27M4CN TLC27M4CPW TLC27M4Y
900 µV TLC27M9ID — — TLC27M9IN — —
40
°
Cto85
°
C
2 mV TLC27M4BID — — TLC27M4BIN — —
–
40°C
to
85°C
5 mV TLC27M4AID — — TLC27M4AIN — —
10 mV TLC27M4ID — — TLC27M4IN TLC27M41PW —
55
°
Cto125
°
C
900 µV TLC27M9MD TLC27M9MFK TLC27M9MJ TLC27M9MN — —
–
55°C
to
125°C
10 mV TLC27M4MD TLC27M4MFK TLC27M4MJ TLC27M4MN — —
The D and PW package is available taped and reeled. Add R suffix to the device type (e.g., TLC279CDR).
TLC27M4, TLC27M4A, TLC27M4B, TLC27M4Y, TLC27M9
LinCMOS PRECISION QUAD OPERATIONAL AMPLIFIERS
SLOS093C – OCTOBER 1987 – REVISED MAY 1999
3
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
equivalent schematic (each amplifier)
VDD
P4
P3
R6
N5R2
P2
R1
P1
IN–
IN+
N1
R3 D1 R4 D2
N2
GND
N3
R5 C1
N4 R7
N6 N7
OUT
P6P5
TLC27M4, TLC27M4A, TLC27M4B, TLC27M4Y, TLC27M9
LinCMOS PRECISION QUAD OPERATIONAL AMPLIFIERS
SLOS093C – OCTOBER 1987 – REVISED MAY 1999
4POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLC27M4Y chip information
This chip, when properly assembled, displays characteristics similar to the TLC27M4C. Thermal compression
or ultrasonic bonding may be used on the doped-aluminum bonding pads. Chips may be mounted with
conductive epoxy or a gold-silicon preform.
BONDING PAD ASSIGNMENTS
CHIP THICKNESS: 15 TYPICAL
BONDING PADS: 4 × 4 MINIMUM
TJmax = 150°C
TOLERANCES ARE ±10%.
ALL DIMENSIONS ARE IN MILS.
PIN (11) IS INTERNALLY CONNECTED
TO BACKSIDE OF CHIP.
+
–1OUT
1IN+
1IN–
VDD
(4)
(6)
(3)
(2)
(5)
(1)
–
+
(7) 2IN+
2IN–
2OUT
(11)
GND
+
–3OUT
3IN+
3IN–
(13)
(10)
(9)
(12)
(8)
–
+
(14)
4OUT 4IN+
4IN–
68
108
(1) (2) (3) (4) (5) (6) (7)
(8)
(9)(10)
(11)
(12)(13)
(14)
TLC27M4, TLC27M4A, TLC27M4B, TLC27M4Y, TLC27M9
LinCMOS PRECISION QUAD OPERATIONAL AMPLIFIERS
SLOS093C – OCTOBER 1987 – REVISED MAY 1999
5
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)†
Supply voltage, VDD (see Note 1) 18 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Differential input voltage, VID (see Note 2) ±VDD
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input voltage range, VI (any input) –0.3 V to VDD
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input current, II ±5 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Output current, lO (each output) ±30 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total current into VDD 45 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total current out of GND 45 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Duration of short-circuit current at (or below) 25°C (see Note 3) unlimited. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous total dissipation See Dissipation Rating Table. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating free-air temperature, TA: C suffix 0°C to 70°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
I suffix –40°C to 85°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
M suffix –55°C to 125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage temperature range –65°C to 150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Case temperature for 60 seconds: FK package 260°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds: D, N, or PW package 260°C. . . . . . . . . . . .
Lead temperature 1,6 mm (1/16 inch) from case for 60 seconds: J package 300°C. . . . . . . . . . . . . . . . . . . . .
†Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only , and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may af fect device reliability.
NOTES: 1. All voltage values, except differential voltages, are with respect to network ground.
2. Differential voltages are at IN+ with respect to IN–.
3. The output may be shorted to either supply. Temperature and/or supply voltages must be limited to ensure that the maximum
dissipation rating is not exceeded (see application section).
DISSIPATION RATING TABLE
PACKAGE TA ≤ 25°C
POWER RATING DERATING FACTOR
ABOVE TA = 25°CTA = 70°C
POWER RATING TA = 85°C
POWER RATING TA = 125°C
POWER RATING
D950 mW 7.6 mW/°C 608 mW 494 mW —
FK 1375 mW 11.0 mW/°C 880 mW 715 mW 275 mW
J 1375 mW 11.0 mW/°C 880 mW 715 mW 275 mW
N1575 mW 12.6 mW/°C 1008 mW 819 mW —
PW 700 mW 5.6 mW/°C 448 mW — —
recommended operating conditions
C SUFFIX I SUFFIX M SUFFIX
UNIT
MIN MAX MIN MAX MIN MAX
UNIT
Supply voltage, VDD 316 4 16 4 16 V
Common mode in
p
ut voltage VIC
VDD = 5 V –0.2 3.5 –0.2 3.5 0 3.5
V
Common
-
mode
inp
u
t
v
oltage
,
V
IC VDD = 10 V –0.2 8.5 –0.2 8.5 0 8.5
V
Operating free-air temperature, TA0 70 –40 85 –55 125 °C
TLC27M4, TLC27M4A, TLC27M4B, TLC27M4Y, TLC27M9
LinCMOS PRECISION QUAD OPERATIONAL AMPLIFIERS
SLOS093C – OCTOBER 1987 – REVISED MAY 1999
6POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
electrical characteristics at specified free-air temperature, VDD = 5 V (unless otherwise noted)
PARAMETER TEST CONDITIONS TA
†
TLC27M4C
TLC27M4AC
TLC27M4BC
TLC27M9C UNIT
MIN TYP MAX
TLC27M4C
V
O
= 1.4 V, V
IC
= 0, 25°C 1.1 10
TLC27M4C
O,
RS = 50 Ω,
IC ,
RL = 100 kΩFull range 12
mV
TLC27M4AC
V
O
= 1.4 V, V
IC
= 0, 25°C 0.9 5
mV
In
p
ut offset voltage
TLC27M4AC
O,
RS = 50 Ω,
IC ,
RL = 100 kΩFull range 6.5
IO
Inp
u
t
offset
v
oltage
TLC274BC
V
O
= 1.4 V, V
IC
= 0, 25°C 250 2000
TLC274BC
O,
RS = 50 Ω,
IC ,
RL = 100 kΩFull range 3000
µV
TLC279C
V
O
= 1.4 V, V
IC
= 0, 25°C 210 900 µ
V
TLC279C
O,
RS = 50 Ω,
IC ,
RL = 100 kΩFull range 1500
αVIO Average temperature coef ficient of input
offset voltage 25°C to
70°C1.7 µV/°C
In
p
ut offset current (see Note 4)
VO=25V
VIC =25V
25°C 0.1 p
A
IO
Inp
u
t
offset
c
u
rrent
(see
Note
4)
V
O =
2
.
5
V
,
V
IC =
2
.
5
V
70°C 7 300
pA
In
p
ut bias current (see Note 4)
VO=25V
VIC =25V
25°C 0.6 p
A
IB
Inp
u
t
bias
c
u
rrent
(see
Note
4)
V
O =
2
.
5
V
,
V
IC =
2
.
5
V
70°C 40 600
pA
Common-mode input voltage range 25°C–0.2
to
4
–0.3
to
4.2 V
ICR
gg
(see Note 5) Full range –0.2
to
3.5 V
25°C 3.2 3.9
VOH High-level output voltage VID = 100 mV, RL = 100 kΩ0°C33.9 V
70°C 3 4
25°C 0 50
VOL Low-level output voltage VID = –100 mV, IOL = 0 0°C 0 50 mV
70°C 0 50
L i l diff ti l
25°C 25 170
AVD Large-signal differential
voltage am
p
lification
VO = 0.25 V to 2 V, RL = 100 kΩ0°C15 200 V/mV
voltage
am lification
70°C 15 140
25°C 65 91
CMRR Common-mode rejection ratio VIC = VICRmin 0°C 60 91 dB
70°C 60 92
S l lt j ti ti
25°C 70 93
kSVR Supply-voltage rejection ratio
(∆VDD/∆VIO)
VDD = 5 V to 10 V, VO = 1.4 V 0°C60 92 dB
(∆VDD/∆VIO)
70°C 60 94
V25V
V25V
25°C 420 1120
IDD Supply current (four amplifiers) VO = 2.5 V,
No load
VIC = 2.5 V, 0°C500 1280 µA
No
load
70°C 340 880
†Full range is 0°C to 70°C.
NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically.
5. This range also applies to each input individually.
TLC27M4, TLC27M4A, TLC27M4B, TLC27M4Y, TLC27M9
LinCMOS PRECISION QUAD OPERATIONAL AMPLIFIERS
SLOS093C – OCTOBER 1987 – REVISED MAY 1999
7
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
electrical characteristics at specified free-air temperature, VDD = 10 V (unless otherwise noted)
PARAMETER TEST CONDITIONS TA
†
TLC27M4C
TLC27M4AC
TLC27M4BC
TLC27M9C UNIT
MIN TYP MAX
TLC27M4C
V
O
= 1.4 V, V
IC
= 0, 25°C 1.1 10
TLC27M4C
O,
RS = 50 Ω,
IC ,
RL = 100 kΩFull range 12
mV
TLC27M4AC
V
O
= 1.4 V, V
IC
= 0, 25°C 0.9 5
mV
VIO
In
p
ut offset voltage
TLC27M4AC
O,
RS = 50 Ω,
IC ,
RL = 100 kΩFull range 6.5
V
IO
Inp
u
t
offset
v
oltage
TLC27M4BC
V
O
= 1.4 V, V
IC
= 0, 25°C 260 2000
TLC27M4BC
O,
RS = 50 Ω,
IC ,
RL = 100 kΩFull range 3000
µV
TLC27M9C
V
O
= 1.4 V, V
IC
= 0, 25°C 220 1200 µ
V
TLC27M9C
O,
RS = 50 Ω,
IC ,
RL = 100 kΩFull range 1900
αVIO Average temperature coef ficient of input
offset voltage 25°C to
70°C2.1 µV/°C
IIO
In
p
ut offset current (see Note 4)
VO=5V
VIC =5V
25°C 0.1 p
A
I
IO
Inp
u
t
offset
c
u
rrent
(see
Note
4)
V
O =
5
V
,
V
IC =
5
V
70°C 7 300
pA
IIB
In
p
ut bias current (see Note 4)
VO=5V
VIC =5V
25°C 0.7 p
A
I
IB
Inp
u
t
bias
c
u
rrent
(see
Note
4)
V
O =
5
V
,
V
IC =
5
V
70°C 50 600
pA
VICR
Common-mode input voltage range 25°C–0.2
to
9
–0.3
to
9.2 V
V
ICR
gg
(see Note 5) Full range –0.2
to
8.5 V
25°C 8 8.7
VOH High-level output voltage VID = 100 mV, RL = 100 kΩ0°C7.8 8.7 V
70°C 7.8 8.7
25°C 0 50
VOL Low-level output voltage VID = –100 mV, IOL = 0 0°C 0 50 mV
70°C 0 50
L i l diff ti l
25°C 25 275
AVD Large-signal differential
voltage am
p
lification
VO = 1 V to 6 V, RL = 100 kΩ0°C15 320 V/mV
voltage
am lification
70°C 15 230
25°C 65 94
CMRR Common-mode rejection ratio VIC = VICRmin 0°C 60 94 dB
70°C 60 94
S l lt j ti ti
25°C 70 93
kSVR Supply-voltage rejection ratio
(∆VDD/∆VIO)
VDD = 5 V to 10 V, VO = 1.4 V 0°C60 92 dB
(∆VDD/∆VIO)
70°C 60 94
V5V
V5V
25°C 570 1200
IDD Supply current (four amplifiers) VO = 5 V,
No load
VIC = 5 V, 0°C690 1600 µA
No
load
70°C 440 1120
†Full range is 0°C to 70°C.
NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically.
5. This range also applies to each input individually.
TLC27M4, TLC27M4A, TLC27M4B, TLC27M4Y, TLC27M9
LinCMOS PRECISION QUAD OPERATIONAL AMPLIFIERS
SLOS093C – OCTOBER 1987 – REVISED MAY 1999
8POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
electrical characteristics at specified free-air temperature, VDD = 5 V (unless otherwise noted)
PARAMETER TEST CONDITIONS TA
†
TLC27M4I
TLC27M4AI
TLC27M4BI
TLC27M9I UNIT
MIN TYP MAX
TLC27M4I
V
O
= 1.4 V, V
IC
= 0, 25°C 1.1 10
TLC27M4I
O,
RS = 50 Ω,
IC ,
RL = 100 kΩFull range 13
mV
TLC27M4AI
V
O
= 1.4 V, V
IC
= 0, 25°C 0.9 5
mV
VIO
In
p
ut offset voltage
TLC27M4AI
O,
RS = 50 Ω,
IC ,
RL = 100 kΩFull range 6.5
V
IO
Inp
u
t
offset
v
oltage
TLC27M4BI
V
O
= 1.4 V, V
IC
= 0, 25°C 250 2000
TLC27M4BI
O,
RS = 50 Ω,
IC ,
RL = 100 kΩFull range 3000
µV
TLC27M9I
V
O
= 1.4 V, V
IC
= 0, 25°C 210 900 µ
V
TLC27M9I
O,
RS = 50 Ω,
IC ,
RL = 100 kΩFull range 2000
αVIO Average temperature coef ficient of input
offset voltage 25°C to
85°C1.7 µV/°C
IIO
In
p
ut offset current (see Note 4)
VO=25V
VIC =25V
25°C 0.1 p
A
I
IO
Inp
u
t
offset
c
u
rrent
(see
Note
4)
V
O =
2
.
5
V
,
V
IC =
2
.
5
V
85°C 24 1000
pA
IIB
In
p
ut bias current (see Note 4)
VO=25V
VIC =25V
25°C 0.6 p
A
I
IB
Inp
u
t
bias
c
u
rrent
(see
Note
4)
V
O =
2
.
5
V
,
V
IC =
2
.
5
V
85°C 200 2000
pA
VICR
Common-mode input voltage range 25°C–0.2
to
4
–0.3
to
4.2 V
V
ICR
gg
(see Note 5) Full range –0.2
to
3.5 V
25°C 3.2 3.9
VOH High-level output voltage VID = 100 mV, RL = 100 kΩ–40°C33.9 V
85°C 3 4
25°C 0 50
VOL Low-level output voltage VID = –100 mV, IOL = 0 –40°C050 mV
85°C 0 50
L i l diff ti l
25°C 25 170
AVD Large-signal differential
voltage am
p
lification
VO = 0.25 V to 2 V, RL = 100 kΩ–40°C15 270 V/mV
voltage
am lification
85°C 15 130
25°C 65 91
CMRR Common-mode rejection ratio VIC = VICRmin –40°C60 90 dB
85°C 60 90
S l lt j ti ti
25°C 70 93
kSVR Supply-voltage rejection ratio
(∆VDD/∆VIO)
VDD = 5 V to 10 V, VO = 1.4 V –40°C60 91 dB
(∆VDD/∆VIO)
85°C 60 94
V25V
V25V
25°C 420 1120
IDD Supply current (four amplifiers) VO = 2.5 V,
No load
VIC = 2.5 V, –40°C630 1600 µA
No
load
85°C 320 800
†Full range is –40°C to 85°C.
NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically.
5. This range also applies to each input individually.
TLC27M4, TLC27M4A, TLC27M4B, TLC27M4Y, TLC27M9
LinCMOS PRECISION QUAD OPERATIONAL AMPLIFIERS
SLOS093C – OCTOBER 1987 – REVISED MAY 1999
9
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
electrical characteristics at specified free-air temperature, VDD = 10 V (unless otherwise noted)
PARAMETER TEST CONDITIONS TA
†
TLC27M4I
TLC27M4AI
TLC27M4BI
TLC27M9I UNIT
MIN TYP MAX
TLC27M4I
V
O
= 1.4 V, V
IC
= 0, 25°C 1.1 10
TLC27M4I
O,
RS = 50 Ω,
IC ,
RL = 100 kΩFull range 13
mV
TLC27M4AI
V
O
= 1.4 V, V
IC
= 0, 25°C 0.9 5
mV
VIO
In
p
ut offset voltage
TLC27M4AI
O,
RS = 50 Ω,
IC ,
RL = 100 kΩFull range 7
V
IO
Inp
u
t
offset
v
oltage
TLC27M4BI
V
O
= 1.4 V, V
IC
= 0, 25°C 260 2000
TLC27M4BI
O,
RS = 50 Ω,
IC ,
RL = 100 kΩFull range 3500
µV
TLC27M9I
V
O
= 1.4 V, V
IC
= 0, 25°C 220 1200 µ
V
TLC27M9I
O,
RS = 50 Ω,
IC ,
RL = 100 kΩFull range 2900
αVIO Average temperature coef ficient of input
offset voltage 25°C to
85°C2.1 µV/°C
IIO
In
p
ut offset current (see Note 4)
VO=5V
VIC =5V
25°C 0.1 p
A
I
IO
Inp
u
t
offset
c
u
rrent
(see
Note
4)
V
O =
5
V
,
V
IC =
5
V
85°C 26 1000
pA
IIB
In
p
ut bias current (see Note 4)
VO=5V
VIC =5V
25°C 0.7 p
A
I
IB
Inp
u
t
bias
c
u
rrent
(see
Note
4)
V
O =
5
V
,
V
IC =
5
V
85°C 220 2000
pA
VICR
Common-mode input 25°C–0.2
to
9
–0.3
to
9.2 V
V
ICR voltage range (see Note 5) Full range –0.2
to
8.5 V
25°C 8 8.7
VOH High-level output voltage VID = 100 mV, RL = 100 kΩ–40°C7.8 8.7 V
85°C 7.8 8.7
25°C 0 50
VOL Low-level output voltage VID = –100 mV, IOL = 0 –40°C050 mV
85°C 0 50
L i l diff ti l
25°C 25 275
AVD Large-signal differential
voltage am
p
lification
VO = 1 V to 6 V, RL = 100 kΩ–40°C15 390 V/mV
voltage
am lification
85°C 15 220
25°C 65 94
CMRR Common-mode rejection ratio VIC = VICRmin –40°C60 93 dB
85°C 60 94
S l lt j ti ti
25°C 70 93
kSVR Supply-voltage rejection ratio
(∆VDD/∆VIO)
VDD = 5 V to 10 V, VO = 1.4 V –40°C60 91 dB
(∆VDD/∆VIO)
85°C 60 94
V5V
V5V
25°C 570 1200
IDD Supply current (four amplifiers) VO = 5 V,
No load
VIC = 5 V, –40°C900 1800 µA
No
load
85°C 410 1040
†Full range is –40°C to 85°C.
NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically.
5. This range also applies to each input individually.
TLC27M4, TLC27M4A, TLC27M4B, TLC27M4Y, TLC27M9
LinCMOS PRECISION QUAD OPERATIONAL AMPLIFIERS
SLOS093C – OCTOBER 1987 – REVISED MAY 1999
10 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
electrical characteristics at specified free-air temperature, VDD = 5 V (unless otherwise noted)
PARAMETER TEST CONDITIONS T
A†
TLC27M4M
TLC27M9M UNIT
TA
MIN TYP MAX
TLC27M4M
V
O
= 1.4 V, V
IC
= 0, 25°C 1.1 10
mV
VIO
In
p
ut offset voltage
TLC27M4M
O,
RS = 50 Ω,
IC ,
RL = 100 kΩFull range 12
mV
V
IO
Inp
u
t
offset
v
oltage
TLC27M9M
V
O
= 1.4 V, V
IC
= 0, 25°C 210 900
µV
TLC27M9M
O,
RS = 50 Ω,
IC ,
RL = 100 kΩFull range 3750 µ
V
αVIO Average temperature coef ficient of input
offset voltage 25°C to
125°C1.7 µV/°C
IIO
In
p
ut offset current (see Note 4)
VO=25V
VIC =25V
25°C 0.1 pA
I
IO
Inp
u
t
offset
c
u
rrent
(see
Note
4)
V
O =
2
.
5
V
,
V
IC =
2
.
5
V
125°C 1.4 15 nA
IIB
In
p
ut bias current (see Note 4)
VO=25V
VIC =25V
25°C 0.6 pA
I
IB
Inp
u
t
bias
c
u
rrent
(see
Note
4)
V
O =
2
.
5
V
,
V
IC =
2
.
5
V
125°C 9 35 nA
VICR
Common-mode input voltage range 25°C0
to
4
–0.3
to
4.2 V
V
ICR
gg
(see Note 5) Full range 0
to
3.5 V
25°C 3.2 3.9
VOH High-level output voltage VID = 100 mV, RL = 100 kΩ–55°C 3 3.9 V
125°C 3 4
25°C 0 50
VOL Low-level output voltage VID = –100 mV, IOL = 0 –55°C 0 50 mV
125°C 0 50
Large signal differential
25°C 25 170
AVD
L
arge-s
i
gna
l
diff
eren
ti
a
l
voltage am
p
lification
VO = 0.25 V to 2 V, RL = 100 kΩ–55°C15 290 V/mV
voltage
am lification
125°C 15 120
25°C 65 91
CMRR Common-mode rejection ratio VIC = VICRmin –55°C60 89 dB
125°C 60 91
Supply voltage rejection ratio
25°C 70 93
kSVR
S
upp
l
y-vo
lt
age re
j
ec
ti
on ra
ti
o
(∆VDD/∆VIO)
VDD = 5 V to 10 V, VO = 1.4 V –55°C 60 91 dB
(∆VDD/∆VIO)
125°C 60 94
V25V
V25V
25°C 420 1120
IDD Supply current (four amplifiers)
V
O =
2
.
5
V
,
No load
V
IC =
2
.
5
V
,–55°C680 1760 µA
No
load
125°C 280 720
†Full range is –55°C to 125°C.
NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically.
5. This range also applies to each input individually.
TLC27M4, TLC27M4A, TLC27M4B, TLC27M4Y, TLC27M9
LinCMOS PRECISION QUAD OPERATIONAL AMPLIFIERS
SLOS093C – OCTOBER 1987 – REVISED MAY 1999
11
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
electrical characteristics at specified free-air temperature, VDD = 10 V (unless otherwise noted)
PARAMETER TEST CONDITIONS T
A†
TLC27M4M
TLC27M9M UNIT
TA
MIN TYP MAX
TLC27M4M
V
O
= 1.4 V, V
IC
= 0, 25°C 1.1 10
mV
VIO
In
p
ut offset voltage
TLC27M4M
O,
RS = 50 Ω,
IC ,
RL = 100 kΩFull range 12
mV
V
IO
Inp
u
t
offset
v
oltage
TLC27M9M
V
O
= 1.4 V, V
IC
= 0, 25°C 220 1200
µV
TLC27M9M
O,
RS = 50 Ω,
IC ,
RL = 100 kΩFull range 4300 µ
V
αVIO Average temperature coef ficient of input
offset voltage 25°C to
125°C2.1 µV/°C
IIO
In
p
ut offset current (see Note 4)
VO=5V
VIC =5V
25°C 0.1 pA
I
IO
Inp
u
t
offset
c
u
rrent
(see
Note
4)
V
O =
5
V
,
V
IC =
5
V
125°C 1.8 15 nA
IIB
In
p
ut bias current (see Note 4)
VO=5V
VIC =5V
25°C 0.7 pA
I
IB
Inp
u
t
bias
c
u
rrent
(see
Note
4)
V
O =
5
V
,
V
IC =
5
V
125°C 10 35 nA
VICR
Common-mode input voltage range 25°C0
to
9
–0.3
to
9.2 V
V
ICR
gg
(see Note 5) Full range 0
to
8.5 V
25°C 8 8.7
VOH High-level output voltage VID = 100 mV, RL = 100 kΩ–55°C7.8 8.6 V
125°C 7.8 8.8
25°C 0 50
VOL Low-level output voltage VID = –100 mV, IOL = 0 –55°C050 mV
125°C 0 50
L i l diff ti l
25°C 25 275
AVD Large-signal differential
voltage am
p
lification
VO = 1 V to 6 V, RL = 100 kΩ–55°C15 420 V/mV
voltage
am lification
125°C 15 190
25°C 65 94
CMRR Common-mode rejection ratio VIC = VICRmin –55°C60 93 dB
125°C 60 93
S l lt j ti ti
25°C 70 93
kSVR Supply-voltage rejection ratio
(∆VDD/∆VIO)
VDD = 5 V to 10 V, VO = 1.4 V –55°C60 91 dB
(∆VDD/∆VIO)
125°C 60 94
V5V
V5V
25°C 570 1200
IDD Supply current (four amplifiers) VO = 5 V,
No load
VIC = 5 V, –55°C980 2000 µA
No
load
125°C 360 960
†Full range is –55°C to 125°C.
NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically.
5. This range also applies to each input individually.
TLC27M4, TLC27M4A, TLC27M4B, TLC27M4Y, TLC27M9
LinCMOS PRECISION QUAD OPERATIONAL AMPLIFIERS
SLOS093C – OCTOBER 1987 – REVISED MAY 1999
12 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
electrical characteristics, VDD = 5 V, TA = 25°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
TLC27M4Y
UNIT
PARAMETER
TEST
CONDITIONS
MIN TYP MAX
UNIT
In
p
ut offset voltage
V
O
= 1.4 V, V
IC
= 0,
11
10
mV
IO
Inp
u
t
offset
v
oltage
O,
RS = 50 Ω,
IC ,
RL = 100 kΩ
1
.
1
10
mV
αVIO Temperature coef ficient of input offset voltage TA = 25°C to 70°C 1.7 µV/°C
IIO Input of fset current (see Note 4) VO = 2.5 V, VIC = 2.5 V 0.1 pA
IIB Input bias current (see Note 4) VO = 2.5 V, VIC = 2.5 V 0.6 pA
VICR Common-mode input voltage range (see Note 5) –0.2
to
4
–0.3
to
4.2 V
VOH High-level output voltage VID = 100 mV, RL = 100 kΩ3.2 3.9 V
VOL Low-level output voltage VID = –100 mV, IOL = 0 0 50 mV
AVD Large-signal differential voltage amplification VO = 0.25 V to 2 V, RL= 100 kΩ25 170 V/mV
CMRR Common-mode rejection ratio VIC = VICRmin 65 91 dB
kSVR Supply-voltage rejection ratio (∆VDD/∆VIO) VDD = 5 V to 10 V, VO = 1.4 V 70 93 dB
IDD Supply current (four amplifiers) VO = 2.5 V,
No load VIC = 2.5 V, 420 1120 µA
electrical characteristics, VDD = 10 V, TA = 25°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
TLC27M4Y
UNIT
PARAMETER
TEST
CONDITIONS
MIN TYP MAX
UNIT
In
p
ut offset voltage
V
O
= 1.4 V, V
IC
= 0,
11
10
mV
IO
Inp
u
t
offset
v
oltage
O,
RS = 50 Ω,
IC ,
RL = 100 kΩ
1
.
1
10
mV
αVIO Temperature coef ficient of input offset voltage TA = 25°C to 70°C 2.1 µV/°C
IIO Input of fset current (see Note 4) VO = 5 V, VIC = 5 V 0.1 pA
IIB Input bias current (see Note 4) VO = 5 V, VIC = 5 V 0.7 pA
VICR Common-mode input voltage range (see Note 5) –0.2
to
9
–0.3
to
9.2 V
VOH High-level output voltage VID = 100 mV, RL = 100 kΩ88.7 V
VOL Low-level output voltage VID = –100 mV, IOL = 0 0 50 mV
AVD Large-signal differential voltage amplification VO = 1 V to 6 V, RL = 100 kΩ25 275 V/mV
CMRR Common-mode rejection ratio VIC = VICRmin 65 94 dB
kSVR Supply-voltage rejection ratio (∆VDD/∆VIO) VDD = 5 V to 10 V, VO = 1.4 V 70 93 dB
IDD Supply current (four amplifiers) VO = 5 V,
No load VIC = 5 V, 570 1200 µA
NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically.
5. This range also applies to each input individually.
TLC27M4, TLC27M4A, TLC27M4B, TLC27M4Y, TLC27M9
LinCMOS PRECISION QUAD OPERATIONAL AMPLIFIERS
SLOS093C – OCTOBER 1987 – REVISED MAY 1999
13
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
operating characteristics at specified free-air temperature, VDD = 5 V
PARAMETER TEST CONDITIONS TA
TLC27M4C
TLC27M4AC
TLC27M4BC
TLC27M9C UNIT
MIN TYP MAX
25°C 0.43
VIPP = 1 V 0°C0.46
SR
Slew rate at unity gain
RL = 100 Ω,
CL20
p
F
70°C 0.36
V/µs
SR
Sle
w
rate
at
u
nit
y
gain
C
L =
20
p
F
,
See Fi
g
ure 1 25°C 0.40
V/
µ
s
See
Figure
1
VIPP = 2.5 V 0°C0.43
70°C 0.34
VnEquivalent input noise voltage f = 1 kHz,
See Figure 2 RS = 20 Ω25°C 32 nV/√Hz
VV
C20F
25°C 55
BOM Maximum output-swing bandwidth VO = VOH,
RL= 100 kΩ
CL = 20 pF,
See Figure 1
0°C 60 kHz
RL
=
100
kΩ
,
See
Figure
1
70°C 50
V10V
C20F
25°C 525
B1Unity-gain bandwidth VI = 10 mV,
See Figure 3
CL = 20 pF, 0°C610 kHz
See
Figure
3
70°C 400
V10V
fB
25°C 40°
φmPhase margin VI = 10 mV,
CL=20
p
F
f = B1,
See Figure 3
0°C 41°
CL
=
20
F
,
See
Figure
3
70°C 39°
operating characteristics at specified free-air temperature, VDD = 10 V
PARAMETER TEST CONDITIONS TA
TLC27M4C
TLC27M4AC
TLC27M4BC
TLC27M9C UNIT
MIN TYP MAX
25°C 0.62
VIPP = 1 V 0°C0.67
SR
Slew rate at unity gain
RL = 100 Ω,
CL20
p
F
70°C 0.51
V/µs
SR
Sle
w
rate
at
u
nit
y
gain
C
L =
20
p
F
,
See
Fi
gu
r
e
1 25°C 0.56
V/
µ
s
See
Figure
1
VIPP = 5.5 V 0°C0.61
70°C 0.46
VnEquivalent input noise voltage f = 1 kHz,
See Figure 2 RS = 20 Ω,25°C 32 nV/√Hz
VV
C20F
25°C 35
BOM Maximum output-swing bandwidth VO = VOH,
RL= 100 kΩ
CL = 20 pF,
See Figure 1
0°C 40 kHz
RL
=
100
kΩ
,
See
Figure
1
70°C 30
V10V
C20F
25°C 635
B1Unity-gain bandwidth VI = 10 mV,
See Figure 3
CL = 20 pF, 0°C710 kHz
See
Figure
3
70°C 510
V10V
fB
25°C 43°
φmPhase margin VI = 10 mV,
CL=20
p
F
f = B1,
See Figure 3
0°C 44°
CL
=
20
F
,
See
Figure
3
70°C 42°
TLC27M4, TLC27M4A, TLC27M4B, TLC27M4Y, TLC27M9
LinCMOS PRECISION QUAD OPERATIONAL AMPLIFIERS
SLOS093C – OCTOBER 1987 – REVISED MAY 1999
14 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
operating characteristics at specified free-air temperature, VDD = 5 V
PARAMETER TEST CONDITIONS TA
TLC27M4I
TLC27M4AI
TLC27M4BI
TLC27M9I UNIT
MIN TYP MAX
25°C 0.43
VIPP = 1 V –40°C0.51
SR
Slew rate at unity gain
RL = 100 Ω,
CL20
p
F
85°C 0.35
V/µs
SR
Sle
w
rate
at
u
nit
y
gain
C
L =
20
p
F
,
See Fi
g
ure 1 25°C 0.40
V/
µ
s
See
Figure
1
VIPP = 2.5 V –40°C0.48
85°C 0.32
VnEquivalent input noise voltage f = 1 kHz,
See Figure 2 RS = 20 Ω,25°C 32 nV/√Hz
VV
C20F
25°C 55
BOM Maximum output-swing bandwidth VO = VOH,
RL= 100 kΩ
CL = 20 pF,
See Figure 1
–40°C75 kHz
RL
=
100
kΩ
,
See
Figure
1
85°C 45
V10V
C20F
25°C 525
B1Unity-gain bandwidth VI = 10 mV,
See Figure 3
CL = 20 pF, –40°C770 kHz
See
Figure
3
85°C 370
V10V
fB
25°C 40°
φmPhase margin VI = 10 mV,
CL=20
p
F
f = B1,
See Figure 3
–40°C43°
CL
=
20
F
,
See
Figure
3
85°C 38°
operating characteristics at specified free-air temperature, VDD = 10 V
PARAMETER TEST CONDITIONS TA
TLC27M4I
TLC27M4AI
TLC27M4BI
TLC27M9I UNIT
MIN TYP MAX
25°C 0.62
VIPP = 1 V –40°C0.77
SR
Slew rate at unity gain
RL = 100 Ω,
CL20
p
F
85°C 0.47
V/µs
SR
Sle
w
rate
at
u
nit
y
gain
C
L =
20
p
F
,
See
Fi
gu
r
e
1 25°C 0.56
V/
µ
s
See
Figure
1
VIPP = 5.5 V –40°C0.70
85°C 0.44
VnEquivalent input noise voltage f = 1 kHz,
See Figure 2 RS = 20 Ω,25°C 32 nV/√Hz
VV
C20F
25°C 35
BOM Maximum output-swing bandwidth VO = VOH,
RL= 100 kΩ
CL = 20 pF,
See Figure 1
–40°C45 kHz
RL
=
100
kΩ
,
See
Figure
1
85°C 25
V10V
25°C 635
B1Unity-gain bandwidth VI = 10 mV,
See Figure 3
CL = 20 pF, –40°C880 kHz
See
Figure
3
85°C 480
V10V
fB
25°C 43°
φmPhase margin VI = 10 mV,
CL=20
p
F
f = B1,
See Figure 3
–40°C46°
CL
=
20
F
,
See
Figure
3
85°C 41°
TLC27M4, TLC27M4A, TLC27M4B, TLC27M4Y, TLC27M9
LinCMOS PRECISION QUAD OPERATIONAL AMPLIFIERS
SLOS093C – OCTOBER 1987 – REVISED MAY 1999
15
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
operating characteristics at specified free-air temperature, VDD = 5 V
PARAMETER TEST CONDITIONS TA
TLC27M4M
TLC27M9M UNIT
A
MIN TYP MAX
25°C 0.43
VIPP = 1 V –55°C0.54
SR
Slew rate at unity gain
RL = 100 Ω,
CL20
p
F
125°C 0.29
V/µs
SR
Sle
w
rate
at
u
nit
y
gain
C
L =
20
p
F
,
See
Fi
gu
r
e
1 25°C 0.40
V/
µ
s
See
Figure
1
VIPP = 2.5 V –55°C0.50
125°C 0.28
VnEquivalent input noise voltage f = 1 kHz,
See Figure 2 RS = 20 Ω,25°C 32 nV/√Hz
VV
C20F
25°C 55
BOM Maximum output-swing bandwidth VO = VOH,
RL= 100 kΩ
CL = 20 pF,
See Figure 1
–55°C80 kHz
RL
=
100
kΩ
,
See
Figure
1
125°C 40
V10V
C20F
25°C 525
B1Unity-gain bandwidth VI = 10 mV,
See Figure 3
CL = 20 pF, –55°C850 kHz
See
Figure
3
125°C 330
V10V
fB
25°C 40°
φmPhase margin VI = 10 mV,
CL=20
p
F
f = B1,
See Figure 3
–55°C44°
CL
=
20
F
,
See
Figure
3
125°C 36°
operating characteristics at specified free-air temperature, VDD = 10 V
PARAMETER TEST CONDITIONS TA
TLC27M4M
TLC27M9M UNIT
A
MIN TYP MAX
25°C 0.62
VIPP = 1 V –55°C0.81
SR
Slew rate at unity gain
RL = 100 Ω,
CL20
p
F
125°C 0.38
V/µs
SR
Sle
w
rate
at
u
nit
y
gain
C
L =
20
p
F
,
See
Fi
gu
r
e
1 25°C 0.56
V/
µ
s
See
Figure
1
VIPP = 5.5 V –55°C0.73
125°C 0.35
VnEquivalent input noise voltage f = 1 kHz,
See Figure 2 RS = 20 Ω,25°C 32 nV/√Hz
VV
C20F
25°C 35
BOM Maximum output-swing bandwidth VO = VOH,
RL= 100 kΩ
CL = 20 pF,
See Figure 1
–55°C50 kHz
RL
=
100
kΩ
,
See
Figure
1
125°C 20
V10V
C20F
25°C 635
B1Unity-gain bandwidth VI = 10 mV,
See Figure 3
CL = 20 pF, –55°C960 kHz
See
Figure
3
125°C 440
V10V
fB
25°C 43°
φmPhase margin VI = 10 mV,
CL=20
p
F
f = B1,
See Figure 3
–55°C47°
CL
=
20
F
,
See
Figure
3
125°C 39°
TLC27M4, TLC27M4A, TLC27M4B, TLC27M4Y, TLC27M9
LinCMOS PRECISION QUAD OPERATIONAL AMPLIFIERS
SLOS093C – OCTOBER 1987 – REVISED MAY 1999
16 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
operating characteristics, VDD = 5 V, TA = 25°C
PARAMETER
TEST CONDITIONS
TLC27M4Y
UNIT
PARAMETER
TEST
CONDITIONS
MIN TYP MAX
UNIT
SR
Slew rate at unity gain
RL = 100 kΩ,
CL20
p
F
VIPP = 1 V 0.43
V/µs
SR
Sle
w
rate
at
u
nit
y
gain
C
L =
20
p
F
,
See Figure 1 VIPP = 2.5 V 0.40
V/
µ
s
VnEquivalent input noise voltage f = 1 kHz,
See Figure 2 RS = 20 Ω,32 nV/√Hz
BOM Maximum output-swing bandwidth VO = VOH,
RL = 100 kΩ,CL = 20 pF,
See Figure 1 55 kHz
B1Unity-gain bandwidth VI = 10 mV,
See Figure 3 CL = 20 pF, 525 kHz
φmPhase margin VI = 10 mV,
CL = 20 pF, f = B1,
See Figure 3 40°
operating characteristics, VDD = 10 V, TA = 25°C
PARAMETER
TEST CONDITIONS
TLC27M4Y
UNIT
PARAMETER
TEST
CONDITIONS
MIN TYP MAX
UNIT
SR
Slew rate at unity gain
RL = 100 kΩ,
CL20
p
F
VIPP = 1 V 0.62
V/µs
SR
Sle
w
rate
at
u
nit
y
gain
C
L =
20
p
F
,
See Figure 1 VIPP = 5.5 V 0.56
V/
µ
s
VnEquivalent input noise voltage f = 1 kHz,
See Figure 2 RS = 20 Ω,32 nV/√Hz
BOM Maximum output-swing bandwidth VO = VOH,
RL = 100 kΩ,CL = 20 pF,
See Figure 1 35 kHz
B1Unity-gain bandwidth VI = 10 mV,
See Figure 3 CL = 20 pF, 635 kHz
φmPhase margin VI = 10 mV,
CL = 20 pF, f = B1,
See Figure 3 43°
TLC27M4, TLC27M4A, TLC27M4B, TLC27M4Y, TLC27M9
LinCMOS PRECISION QUAD OPERATIONAL AMPLIFIERS
SLOS093C – OCTOBER 1987 – REVISED MAY 1999
17
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
PARAMETER MEASUREMENT INFORMATION
single-supply versus split-supply test circuits
Because the TLC27M4 and TLC27M9 are optimized for single-supply operation, circuit configurations used for
the various tests often present some inconvenience since the input signal, in many cases, must be offset from
ground. This inconvenience can be avoided by testing the device with split supplies and the output load tied to
the negative rail. A comparison of single-supply versus split-supply test circuits is shown below. The use of either
circuit gives the same result.
–
+
VDD
CLRL
VO
VIVI
VO
RL
CL
–
+
VDD+
VDD–
(a) SINGLE SUPPLY (b) SPLIT SUPPLY
Figure 1. Unity-Gain Amplifier
VDD
–
+
VDD+
–
+
1/2 VDD
20 Ω
VO
2 kΩ
20 Ω
VDD–
20 Ω20 Ω
2 kΩ
VO
(b) SPLIT SUPPLY(a) SINGLE SUPPLY
Figure 2. Noise-Test Circuit
VDD
–
+
10 kΩ
VO
100 Ω
CL
1/2 VDD
VI
VI
CL
100 Ω
VO
10 kΩ
–
+
VDD+
VDD–
(b) SPLIT SUPPLY(a) SINGLE SUPPLY
Figure 3. Gain-of-100 Inverting Amplifier
TLC27M4, TLC27M4A, TLC27M4B, TLC27M4Y, TLC27M9
LinCMOS PRECISION QUAD OPERATIONAL AMPLIFIERS
SLOS093C – OCTOBER 1987 – REVISED MAY 1999
18 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
PARAMETER MEASUREMENT INFORMATION
input bias current
Because of the high input impedance of the TLC27M4 and TLC27M9 operational amplifiers, attempts to
measure the input bias current can result in erroneous readings. The bias current at normal room ambient
temperature is typically less than 1 pA, a value that is easily exceeded by leakages on the test socket. Two
suggestions are offered to avoid erroneous measurements:
1. Isolate the device from other potential leakage sources. Use a grounded shield around and between
the device inputs (see Figure 4). Leakages that would otherwise flow to the inputs are shunted away.
2. Compensate for the leakage of the test socket by actually performing an input bias current test (using
a picoammeter) with no device in the test socket. The actual input bias current can then be calculated
by subtracting the open-socket leakage readings from the readings obtained with a device in the test
socket.
One word of caution—many automatic testers as well as some bench-top operational amplifier testers use the
servo-loop technique with a resistor in series with the device input to measure the input bias current; the voltage
drop across the series resistor is measured and the bias current is calculated. This method requires that a device
be inserted into the test socket to obtain a correct reading; therefore, an open-socket reading is not feasible
using this method.
V = VIC
148
17
Figure 4. Isolation Metal Around Device Inputs
(J and N packages)
low-level output voltage
To obtain low-supply-voltage operation, some compromise was necessary in the input stage. This compromise
results in the device low-level output being dependent on both the common-mode input voltage level as well
as the differential input voltage level. When attempting to correlate low-level output readings with those quoted
in the electrical specifications, these two conditions should be observed. If conditions other than these are to
be used, please refer to Figures 14 through 19 in the
Typical Characteristics
of this data sheet.
TLC27M4, TLC27M4A, TLC27M4B, TLC27M4Y, TLC27M9
LinCMOS PRECISION QUAD OPERATIONAL AMPLIFIERS
SLOS093C – OCTOBER 1987 – REVISED MAY 1999
19
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
PARAMETER MEASUREMENT INFORMATION
input offset voltage temperature coefficient
Erroneous readings often result from attempts to measure temperature coefficient of input of fset voltage. This
parameter is actually a calculation using input offset voltage measurements obtained at two different
temperatures. When one (or both) of the temperatures is below freezing, moisture can collect on both the device
and the test socket. This moisture results in leakage and contact resistance, which can cause erroneous input
offset voltage readings. The isolation techniques previously mentioned have no effect on the leakage since the
moisture also covers the isolation metal itself, thereby rendering it useless. It is suggested that these
measurements be performed at temperatures above freezing to minimize error.
full-power response
Full-power response, the frequency above which the operational amplifier slew rate limits the output voltage
swing, is often specified two ways: full-linear response and full-peak response. The full-linear response is
generally measured by monitoring the distortion level of the output, while increasing the frequency of a
sinusoidal input signal until the maximum frequency is found above which the output contains significant
distortion. The full-peak response is defined as the maximum output frequency, without regard to distortion,
above which full peak-to-peak output swing cannot be maintained.
Because there is no industry-wide accepted value for significant distortion, the full-peak response is specified
in this data sheet and is measured using the circuit of Figure 1. The initial setup involves the use of a sinusoidal
input to determine the maximum peak-to-peak output of the device (the amplitude of the sinusoidal wave is
increased until clipping occurs). The sinusoidal wave is then replaced with a square wave of the same
amplitude. The frequency is then increased until the maximum peak-to-peak output can no longer be maintained
(Figure 5). A square wave is used to allow a more accurate determination of the point at which the maximum
peak-to-peak output is reached.
(a) f = 1 kHz (b) 1 kHz < f < BOM (c) f = BOM (d) f > BOM
Figure 5. Full-Power-Response Output Signal
test time
Inadequate test time is a frequent problem, especially when testing CMOS devices in a high-volume,
short-test-time environment. Internal capacitances are inherently higher in CMOS than in bipolar and BiFET
devices and require longer test times than their bipolar and BiFET counterparts. The problem becomes more
pronounced with reduced supply levels and lower temperatures.
TLC27M4, TLC27M4A, TLC27M4B, TLC27M4Y, TLC27M9
LinCMOS PRECISION QUAD OPERATIONAL AMPLIFIERS
SLOS093C – OCTOBER 1987 – REVISED MAY 1999
20 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Table of Graphs
FIGURE
VIO Input of fset voltage Distribution 6, 7
αVIO Temperature coef ficient of input offset voltage Distribution 8, 9
VOH
High level out
p
ut voltage
vs High-level output current
vs Su
pp
ly voltage
10, 11
12
V
OH
High
-
le
v
el
o
u
tp
u
t
v
oltage
vs
S
upp
l
y vo
lt
age
vs Free-air temperature
12
13
VOL
Low level out
p
ut voltage
vs Common-mode input voltage
vs Differential input volta
g
e14, 15
16
V
OL
Lo
w-
le
v
el
o
u
tp
u
t
v
oltage
g
vs Free-air temperature
vs Low-level output current 17
18, 19
vs Suppl
y
volta
g
e 20
AVD Differential voltage amplification
vs
Su ly
voltage
vs Free-air temperature
20
21
VD
g
vs Frequency 32, 33
IIB Input bias current vs Free-air temperature 22
IIO Input offset current vs Free-air temperature 22
VIC Common-mode input voltage vs Supply voltage 23
IDD
Su
pp
ly current
vs Supply voltage 24
I
DD
S
u
ppl
y
c
u
rrent
yg
vs Free-air temperature 25
SR
Slew rate
vs Supply voltage 26
SR
Sle
w
rate
yg
vs Free-air temperature 27
Normalized slew rate vs Free-air temperature 28
VO(PP) Maximum peak-to-peak output voltage vs Frequency 29
B1
Unity gain bandwidth
vs Free-air temperature 30
B
1
Unit
y-
gain
band
w
idth
vs Supply voltage 31
Phase shift vs Frequency 32, 33
vs Suppl
y
volta
g
e 34
φmPhase margin
vs
Su ly
voltage
vs Free-air temperature
34
35
φm
g
vs Load capacitance 36
VnEquivalent input noise voltage vs Frequency 37
TLC27M4, TLC27M4A, TLC27M4B, TLC27M4Y, TLC27M9
LinCMOS PRECISION QUAD OPERATIONAL AMPLIFIERS
SLOS093C – OCTOBER 1987 – REVISED MAY 1999
21
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 6
–5
0
Percentage of Units – %
VIO – Input Offset Voltage – mV 5
–4 –3 –2 –1 0 1 234
10
20
30
40
50
60
612 Amplifiers Tested From 6 Wafer Lots
VDD = 5 V
TA = 25°C
N Package
DISTRIBUTION OF TLC27M4
INPUT OFFSET VOLTAGE
Figure 7
N Package
TA = 25°C
VDD = 10 V
612 Amplifiers Tested From 4 Wafer Lots
60
50
40
30
20
10
43210–1–2–3–4 5
VIO – Input Offset Voltage – mV
Percentage of Units – %
0–5
DISTRIBUTION OF TLC27M4
INPUT OFFSET VOLTAGE
Figure 8
αVIO – Temperature Coefficient – µV/°C
Percentage of Units – %
60
0
10
20
30
40
50 TA = 25°C to 125°C
VDD = 5 V
224 Amplifiers Tested From 6 Wafer Lots
(1) 33.0 µV/C
Outliers:
N Package
DISTRIBUTION OF TLC27M4 AND TLC27M9
INPUT OFFSET VOLTAGE
TEMPERATURE COEFFICIENT
86420–2–4–6–8 10–10
Figure 9
αVIO – Temperature Coefficient – µV/°C
50
40
30
20
10
0
60
Percentage of Units – %
Outliers:
(1) 34.6 µV/°C
224 Amplifiers Tested From 6 Wafer Lots
VDD = 10 V
TA = 25°C to 125°C
N Package
DISTRIBUTION OF TLC27M4 AND TLC27M9
INPUT OFFSET VOLTAGE
TEMPERATURE COEFFICIENT
–10 10–8 –6 –4 –2 0 2 4 6 8
TLC27M4, TLC27M4A, TLC27M4B, TLC27M4Y, TLC27M9
LinCMOS PRECISION QUAD OPERATIONAL AMPLIFIERS
SLOS093C – OCTOBER 1987 – REVISED MAY 1999
22 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS†
Figure 10
0
0
IOH – High-Level Output Current – mA –10
5
–2 –4 –6 –8
1
2
3
4
VID = 100 mV
TA = 25°C
VDD = 5 V
VDD = 3 V
VDD = 4 V
HIGH-LEVEL OUTPUT VOLTAGE
vs
HIGH-LEVEL OUTPUT CURRENT
– High-Level Output Voltage – VVOH
Figure 11
0
0
IOH – High-Level Output Current – mA –40
16
–10 –20 –30
2
4
6
8
10
12
14 TA = 25°C
VID = 100 mV
VDD = 16 V
VDD = 10 V
HIGH-LEVEL OUTPUT VOLTAGE
vs
HIGH-LEVEL OUTPUT CURRENT
– High-Level Output Voltage – VVOH
–35–5 –15 –25
Figure 12
0VDD – Supply Voltage – V 162 4 6 8 10 12 14
14
12
10
8
6
4
2
16
0
VID = 100 mV
RL = 100 kΩ
TA = 25°C
HIGH-LEVEL OUTPUT VOLTAGE
vs
SUPPLY VOLTAGE
– High-Level Output Voltage – VVOH
Figure 13
HIGH-LEVEL OUTPUT VOLTAGE
vs
FREE-AIR TEMPERATURE
VDD–1.7
VDD–1.8
VDD–1.9
VDD–2
VDD–2.1
VDD–2.2
VDD–2.3
1007550250–25–50
VDD–1.6
125
TA – Free-Air Temperature – °C
VDD–2.4
–75
IOH = –5 mA
VID = 100 mA
VDD = 5 V
VDD = 10 V
– High-Level Output Voltage – VVOH
†Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
TLC27M4, TLC27M4A, TLC27M4B, TLC27M4Y, TLC27M9
LinCMOS PRECISION QUAD OPERATIONAL AMPLIFIERS
SLOS093C – OCTOBER 1987 – REVISED MAY 1999
23
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS†
Figure 14
0
300
– Low-Level Output Voltage – mV
VIC – Common-Mode Input Voltage – V 4
700
1 2 3
400
500
600 TA = 25°C
IOL = 5 mA
VDD = 5 V
VID = –100 mV
VID = –1 V
LOW-LEVEL OUTPUT VOLTAGE
vs
COMMON-MODE INPUT VOLTAGE
VOL
650
550
450
350
0.5 1.5 2.5 3.5
Figure 15
2500VIC – Common-Mode Input Voltage – V
300
350
400
450
500
246810
V
DD = 10 V
IOL = 5 mA
TA = 25°C
VID = –1 V
VID = –2.5 V
VID = –100 mV
LOW-LEVEL OUTPUT VOLTAGE
vs
COMMON-MODE INPUT VOLTAGE
– Low-Level Output Voltage – mVVOL
13579
Figure 16
LOW-LEVEL OUTPUT VOLTAGE
vs
DIFFERENTIAL INPUT VOLTAGE
0VID – Differential Input Voltage – V –10–2 –4 –6 –8
800
700
600
500
400
300
200
100
0
VDD = 5 V
VDD = 10 V
– Low-Level Output Voltage – mVVOL
IOL = 5 mA
VIC = |VID/2|
TA = 25°C
–1 –3 –5 –7 –9
Figure 17
LOW-LEVEL OUTPUT VOLTAGE
vs
FREE-AIR TEMPERATURE
–75
0125
900
–50 –25 0 25 50 75 100
100
200
300
400
500
600
700
800 VIC = 0.5 V
VID = –1 V
IOL = 5 mA
VDD = 5 V
VDD = 10 V
TA – Free-Air Temperature – °C
– Low-Level Output Voltage – mVVOL
†Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
TLC27M4, TLC27M4A, TLC27M4B, TLC27M4Y, TLC27M9
LinCMOS PRECISION QUAD OPERATIONAL AMPLIFIERS
SLOS093C – OCTOBER 1987 – REVISED MAY 1999
24 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS†
Figure 18
0IOL – Low-Level Output Current – mA
1
8
01 2 3 4 5 6 7
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9 VID = –1 V
VIC = 0.5 V
TA = 25°C
VDD = 3 V
VDD = 4 V
VDD = 5 V
LOW-LEVEL OUTPUT VOLTAGE
vs
LOW-LEVEL OUTPUT CURRENT
– Low-Level Output Voltage – VVOL
Figure 19
0IOL – Low-Level Output Current – mA
3
30
05 10 15 20 25
0.5
1
1.5
2
2.5 TA = 25°C
VIC = 0.5 V
VID = –1 V
VDD = 10 V
VDD = 16 V
LOW-LEVEL OUTPUT VOLTAGE
vs
LOW-LEVEL OUTPUT CURRENT
– Low-Level Output Voltage – VVOL
Figure 20
0°C
0VDD – Supply Voltage – V
500
16
02 4 6 8 10 12 14
50
100
150
200
250
300
350
400
450 RL = 100 kΩ
LARGE-SIGNAL
DIFFERENTIAL VOLTAGE AMPLIFICATION
vs
SUPPLY VOLTAGE
–40°C
25°C
70°C
85°C
ÌÌÌÌÌ
ÌÌÌÌÌ
TA = 125°C
AVD – Large-Signal Differential
ÁÁ
ÁÁ
AVD
Voltage Amplification – V/mV
TA = –55°C
Figure 21
1007550250–25–50
0125
TA – Free-Air Temperature – °C
–75
RL = 100 kΩ
VDD = 5 V
VDD = 10 V
LARGE-SIGNAL
DIFFERENTIAL VOLTAGE AMPLIFICATION
vs
FREE-AIR TEMPERATURE
500
50
100
150
200
250
300
350
400
450
AVD – Large-Signal Differential
ÁÁ
ÁÁ
AVD
Voltage Amplification – V/mV
†Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
TLC27M4, TLC27M4A, TLC27M4B, TLC27M4Y, TLC27M9
LinCMOS PRECISION QUAD OPERATIONAL AMPLIFIERS
SLOS093C – OCTOBER 1987 – REVISED MAY 1999
25
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS†
Figure 22
0.1 125
10000
45 65 85 105
1
10
100
1000
25 TA – Free-Air Temperature – °C
VDD = 10 V
VIC = 5 V
See Note A
IIB
IIO
INPUT BIAS CURRENT AND INPUT OFFSET CURRENT
vs
FREE-AIR TEMPERATURE
– Input Bias and Offset Currents – pAIIB IIO
and
NOTE A: The typical values of input bias current and input offset
current below 5 pA were determined mathematically.
Figure 23
0VDD – Supply Voltage – V
16
16
0246810 12 14
2
4
6
8
10
12
14
TA = 25°C
COMMON-MODE
INPUT VOLTAGE POSITIVE LIMIT
vs
SUPPLY VOLTAGE
IC
V – Common-Mode Input Voltage – V
Figure 24
VDD – Supply Voltage – V
VO = VDD/2
No Load TA = –55°C
0°C
25°C
70°C
TA = 125°C
0
1600
16
02 4 6 8 10 12 14
200
400
600
800
1000
1200
1400
–40°C
SUPPLY CURRENT
vs
SUPPLY VOLTAGE
– Supply Current – IDD µA
Figure 25
No Load
VO = VDD/2
VDD = 10 V
–75 TA – Free-Air Temperature – °C
1000
125
0–50 –25 0 25 50 75 100
100
200
300
400
500
600
700
800
900
VDD = 5 V
SUPPLY CURRENT
vs
FREE-AIR TEMPERATURE
– Supply Current – IDD µA
†Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
TLC27M4, TLC27M4A, TLC27M4B, TLC27M4Y, TLC27M9
LinCMOS PRECISION QUAD OPERATIONAL AMPLIFIERS
SLOS093C – OCTOBER 1987 – REVISED MAY 1999
26 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS†
Figure 26
0VDD – Supply Voltage – V
0.9
16
0.3 2 4 6 8 10 12 14
0.4
0.5
0.6
0.7
0.8 CL = 20 pF
RL = 100 kΩ
VIPP = 1 V
AV = 1
See Figure 1
TA = 25°C
SLEW RATE
vs
SUPPLY VOLTAGE
µsSR – Slew Rate – V/
Figure 27
–75 TA – Free-Air Temperature – °C
0.9
125
0.2 –50 –25 0 25 50 75 100
0.3
0.4
0.5
0.6
0.7
0.8 VIPP = 5.5 V
VDD = 10 V
VDD = 5 V
VIPP = 1 V VDD = 5 V
VIPP = 2.5 V
VDD = 10 V
VIPP = 1 V
RL = 100 kΩ
AV = 1
See Figure 1
CL = 20 pF
SLEW RATE
vs
FREE-AIR TEMPERATURE
µsSR – Slew Rate – V/
Figure 28
–75
Normalized Slew Rate
TA – Free-Air Temperature – °C
1.4
125
–50 –25 0 25 50 75 100
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3 AV = 1
VIPP = 1 V
RL = 100 kΩ
CL = 20 pF
VDD = 10 V
VDD = 5 V
NORMALIZED SLEW RATE
vs
FREE-AIR TEMPERATURE
Figure 29
1f – Frequency – kHz
10
1000
0
1
2
3
4
5
6
7
8
9
10 100
TA = –55°C
TA = 25°C
TA = 125°C
RL = 100 kΩ
See Figure 1
VDD = 5 V
VDD = 10 V
MAXIMUM PEAK-TO-PEAK OUTPUT VOLTAGE
vs
FREQUENCY
– Maximum Peak-to-Peak Output Voltage – VVO(PP)
†Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
TLC27M4, TLC27M4A, TLC27M4B, TLC27M4Y, TLC27M9
LinCMOS PRECISION QUAD OPERATIONAL AMPLIFIERS
SLOS093C – OCTOBER 1987 – REVISED MAY 1999
27
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS†
Figure 30
VDD = 5 V
VI = 10 mV
CL = 20 pF
–75 TA – Free-Air Temperature – °C
900
125
300 –50 –25 0 25 50 75 100
400
500
600
700
800
UNITY-GAIN BANDWIDTH
vs
FREE-AIR TEMPERATURE
– Unity-Gain Bandwidth – kHzB1
See Figure 3
Figure 31
0VDD – Supply Voltage – V
800
16
400 2 4 6 8 10 12 14
450
500
550
600
650
700
750
See Figure 3
TA = 25°C
CL = 20 pF
VI = 10 mV
UNITY-GAIN BANDWIDTH
vs
SUPPLY VOLTAGE
– Unity-Gain Bandwidth – kHzB1
1f – Frequency – Hz 1 M
0.1 10 100 1 k 10 k 100 k
1
101
102
103
104
105
106
150°
120°
90°
60°
30°
0°
180°
TA = 25°C
RL = 100 kΩ
VDD = 5 V
ÌÌÌ
AVD
Phase Shift
107
LARGE-SIGNAL DIFFERENTIAL VOLTAGE
AMPLIFICATION AND PHASE SHIFT
vs
FREQUENCY
Phase Shift
AVD – Large-Signal Differential
ÁÁ
ÁÁ
AVD V oltage Amplification
Figure 32
†Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
TLC27M4, TLC27M4A, TLC27M4B, TLC27M4Y, TLC27M9
LinCMOS PRECISION QUAD OPERATIONAL AMPLIFIERS
SLOS093C – OCTOBER 1987 – REVISED MAY 1999
28 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS†
Phase Shift
VDD = 10 V
RL = 100 kΩ
TA = 25°C
180°
0°
30°
60°
90°
120°
150°
106
105
10 4
103
102
101
1
100 k10 k1 k10010
0.1 1 M
f – Frequency – Hz
1
107
LARGE-SIGNAL DIFFERENTIAL VOLTAGE
AMPLIFICATION AND PHASE SHIFT
vs
FREQUENCY
ÌÌ
ÌÌ
AVD
Phase Shift
AVD – Large-Signal Differential
ÁÁ
ÁÁ
ÁÁ
AVD V oltage Amplification
Figure 33
Figure 34
0
38°
VDD – Supply Voltage – V 16
50°
2 4 6 8 10 12 14
40°
42°
44°
46°
48°
See Figure 3
TA = 25°C
CL = 20 pF
VI = 10 mV
PHASE MARGIN
vs
SUPPLY VOLTAGE
– Phase Marginφm
Figure 35
–75
35°
TA – Free-Air Temperature – °C125
45°
–50 –25 0 25 50 75 100
37°
39°
41°
43°
VDD = 5 V
VI = 10 mV
TA = 25°C
See Figure 3
PHASE MARGIN
vs
FREE-AIR TEMPERATURE
– Phase Marginφm
†Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
TLC27M4, TLC27M4A, TLC27M4B, TLC27M4Y, TLC27M9
LinCMOS PRECISION QUAD OPERATIONAL AMPLIFIERS
SLOS093C – OCTOBER 1987 – REVISED MAY 1999
29
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
0
28°
CL – Capacitive Load – pF 100
44°
20 40 60 80
30°
32°
34°
36°
38°
40°
42°VDD = 5 V
VI = 10 mV
TA = 25°C
See Figure 3
PHASE MARGIN
vs
CAPACITIVE LOAD
– Phase Margin φm
10 30 50 70 90
Figure 36
Figure 37
1
0
f – Frequency – Hz 1000
300
50
100
150
200
250
10 100
See Figure 2
TA = 25°C
RS = 20 Ω
VDD = 5 V
EQUIVALENT INPUT NOISE VOLTAGE
vs
FREQUENCY
– Equivalent Input Noise Voltage – nV/ Hz
Vn
TLC27M4, TLC27M4A, TLC27M4B, TLC27M4Y, TLC27M9
LinCMOS PRECISION QUAD OPERATIONAL AMPLIFIERS
SLOS093C – OCTOBER 1987 – REVISED MAY 1999
30 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
APPLICATION INFORMATION
single-supply operation
While the TLC27M4 and TLC27M9 perform well using dual power supplies (also called balanced or split
supplies), the design is optimized for single-supply operation. This design includes an input common-mode
voltage range that encompasses ground as well as an output voltage range that pulls down to ground. The
supply voltage range extends down to 3 V (C-suffix types), thus allowing operation with supply levels commonly
available for TTL and HCMOS; however, for maximum dynamic range, 16-V single-supply operation is
recommended.
Many single-supply applications require that a voltage be applied to one input to establish a reference level that
is above ground. A resistive voltage divider is usually sufficient to establish this reference level (see Figure 38).
The low input bias current of the TLC27M4 and TLC27M9 permits the use of very large resistive values to
implement the voltage divider, thus minimizing power consumption.
The TLC27M4 and TLC27M9 work well in conjunction with digital logic; however, when powering both linear
devices and digital logic from the same power supply, the following precautions are recommended:
1. Power the linear devices from separate bypassed supply lines (see Figure 39); otherwise, the linear
device supply rails can fluctuate due to voltage drops caused by high switching currents in the digital
logic.
2. Use proper bypass techniques to reduce the probability of noise-induced errors. Single capacitive
decoupling is often adequate; however, high-frequency applications may require RC decoupling.
R4
VO
VDD
R2
R1
VI
VREF R3 C
0.01 µF
–
+
VREF = VDD R3
R1 + R3
VO = (VREF – VI)R4
R2 + VREF
Figure 38. Inverting Amplifier With Voltage Reference
TLC27M4, TLC27M4A, TLC27M4B, TLC27M4Y, TLC27M9
LinCMOS PRECISION QUAD OPERATIONAL AMPLIFIERS
SLOS093C – OCTOBER 1987 – REVISED MAY 1999
31
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
APPLICATION INFORMATION
single-supply operation (continued)
LogicLogicLogic
–
+
–
+
(a) COMMON SUPPLY RAILS
(b) SEPARATE BYPASSED SUPPLY RAILS (preferred)
Logic Logic Logic Power
Supply
Power
Supply
Output
Output
Figure 39. Common Versus Separate Supply Rails
input characteristics
The TLC27M4 and TLC27M9 are specified with a minimum and a maximum input voltage that, if exceeded at
either input, could cause the device to malfunction. Exceeding this specified range is a common problem,
especially in single-supply operation. Note that the lower range limit includes the negative rail, while the upper
range limit is specified at VDD – 1 V at TA = 25°C and at VDD – 1.5 V at all other temperatures.
The use of the polysilicon-gate process and the careful input circuit design gives the TLC27M4 and TLC27M9
very good input offset voltage drift characteristics relative to conventional metal-gate processes. Offset voltage
drift in CMOS devices is highly influenced by threshold voltage shifts caused by polarization of the phosphorus
dopant implanted in the oxide. Placing the phosphorus dopant in a conductor (such as a polysilicon gate)
alleviates the polarization problem, thus reducing threshold voltage shifts by more than an order of magnitude.
The offset voltage drift with time has been calculated to be typically 0.1 µV/month, including the first month of
operation.
Because of the extremely high input impedance and resulting low bias current requirements, the TLC27M4 and
TLC27M9 are well suited for low-level signal processing; however, leakage currents on printed-circuit boards
and sockets can easily exceed bias current requirements and cause a degradation in device performance. It
is good practice to include guard rings around inputs (similar to those of Figure 4 in the
Parameter Measurement
Information
section). These guards should be driven from a low-impedance source at the same voltage level
as the common-mode input (see Figure 40).
Unused amplifiers should be connected as unity-gain followers to avoid possible oscillation.
noise performance
The noise specifications in operational amplifier circuits are greatly dependent on the current in the first-stage
differential amplifier. The low input bias current requirements of the TLC27M4 and TLC27M9 result in a very
low noise current, which is insignificant in most applications. This feature makes the devices especially
favorable over bipolar devices when using values of circuit impedance greater than 50 kΩ, since bipolar devices
exhibit greater noise currents.
TLC27M4, TLC27M4A, TLC27M4B, TLC27M4Y, TLC27M9
LinCMOS PRECISION QUAD OPERATIONAL AMPLIFIERS
SLOS093C – OCTOBER 1987 – REVISED MAY 1999
32 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
APPLICATION INFORMATION
noise performance (continued)
VI
(a) NONINVERTING AMPLIFIER (c) UNITY-GAIN AMPLIFIER
–
+
(b) INVERTING AMPLIFIER
VI
–
+
–
+
VIVOVOVO
Figure 40. Guard-Ring Schemes
output characteristics
The output stage of the TLC27M4 and TLC27M9 is designed to sink and source relatively high amounts of
current (see
typical characteristics
). If the output is subjected to a short-circuit condition, this high current
capability can cause device damage under certain conditions. Output current capability increases with supply
voltage.
All operating characteristics of the TLC27M4 and TLC27M9 were measured using a 20-pF load. The devices
drive higher capacitive loads; however, as output load capacitance increases, the resulting response pole
occurs at lower frequencies, thereby causing ringing, peaking, or even oscillation (see Figure 41). In many
cases, adding a small amount of resistance in series with the load capacitance alleviates the problem.
–
+
2.5 V
VO
CL
–2.5 V
VI
(d) TEST CIRCUIT
TA = 25°C
f = 1 kHz
VIPP = 1 V
(a) CL = 20 pF, RL = NO LOAD (b) CL = 170 pF, RL = NO LOAD
(c) CL = 190 pF, RL = NO LOAD
Figure 41. Effect of Capacitive Loads and Test Circuit
TLC27M4, TLC27M4A, TLC27M4B, TLC27M4Y, TLC27M9
LinCMOS PRECISION QUAD OPERATIONAL AMPLIFIERS
SLOS093C – OCTOBER 1987 – REVISED MAY 1999
33
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
APPLICATION INFORMATION
output characteristics (continued)
Although the TLC27M4 and TLC27M9 possess excellent high-level output voltage and current capability,
methods for boosting this capability are available, if needed. The simplest method involves the use of a pullup
resistor (RP) connected from the output to the positive supply rail (see Figure 42). There are two disadvantages
to the use of this circuit. First, the NMOS pulldown transistor N4 (see equivalent schematic) must sink a
comparatively large amount of current. In this circuit, N4 behaves like a linear resistor with an on-resistance
between approximately 60 Ω and 180 Ω, depending on how hard the operational amplifier input is driven. With
very low values of RP, a voltage offset from 0 V at the output occurs. Second, pullup resistor R P acts as a drain
load to N4 and the gain of the operational amplifier is reduced at output voltage levels where N5 is not supplying
the output current.
–
+
VI
VDD
RP
VO
R2
R1 RL
IP
IF
IL
–
+
C
IP = Pullup current required
by the operational amplifier
(typically 500 µA) VO
Rp =VDD – VO
IF + IL + IP
Figure 42. Resistive Pullup Figure 43. Compensation for
to Increase VOH Input Capacitance
feedback
Operational amplifier circuits nearly always employ feedback, and since feedback is the first prerequisite for
oscillation, some caution is appropriate. Most oscillation problems result from driving capacitive loads
(discussed previously) and ignoring stray input capacitance. A small-value capacitor connected in parallel with
the feedback resistor is an effective remedy (see Figure 43). The value of this capacitor is optimized empirically .
electrostatic discharge protection
The TLC27M4 and TLC27M9 incorporate an internal electrostatic discharge (ESD) protection circuit that
prevents functional failures at voltages up to 2000 V as tested under MIL-STD-883C, Method 3015.2. Care
should be exercised, however, when handling these devices, as exposure to ESD may result in the degradation
of the device parametric performance. The protection circuit also causes the input bias currents to be
temperature-dependent and have the characteristics of a reverse-biased diode.
latch-up
Because CMOS devices are susceptible to latch-up due to their inherent parasitic thyristors, the TLC27M4 and
TLC27M9 inputs and outputs were designed to withstand –100-mA surge currents without sustaining latch-up;
however, techniques should be used to reduce the chance of latch-up whenever possible. Internal protection
diodes should not, by design, be forward biased. Applied input and output voltage should not exceed the supply
voltage by more than 300 mV. Care should be exercised when using capacitive coupling on pulse generators.
Supply transients should be shunted by the use of decoupling capacitors (0.1 µF typical) located across the
supply rails as close to the device as possible.
TLC27M4, TLC27M4A, TLC27M4B, TLC27M4Y, TLC27M9
LinCMOS PRECISION QUAD OPERATIONAL AMPLIFIERS
SLOS093C – OCTOBER 1987 – REVISED MAY 1999
34 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
APPLICATION INFORMATION
latch-up (continued)
The current path established if latch-up occurs is usually between the positive supply rail and ground; it can be
triggered by surges on the supply lines and/or voltages on either the output or inputs that exceed the supply
voltage. Once latch-up occurs, the current flow is limited only by the impedance of the power supply and the
forward resistance of the parasitic thyristor and usually results in the destruction of the device. The chance of
latch-up occurring increases with increasing temperature and supply voltages.
–
+
R2
68 kΩ
2.2 nF
C2
VO
1N4148
470 kΩ
100 kΩ
C1
2.2 nF
68 kΩ
R1
47 kΩ
100 kΩ
1 µF
100 kΩ
5 V
1/4
TLC27M4
NOTE: VOPP ≈ 2 V
fO = 1
2π √R1R2C1C2
Figure 44. Wien Oscillator
VI
R
5 V
IS
2N3821
–
+1/4
TLC27M9
NOTE: VI = 0 V to 3 V
IS = VI
R
Figure 45. Precision Low-Current Sink
TLC27M4, TLC27M4A, TLC27M4B, TLC27M4Y, TLC27M9
LinCMOS PRECISION QUAD OPERATIONAL AMPLIFIERS
SLOS093C – OCTOBER 1987 – REVISED MAY 1999
35
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
APPLICATION INFORMATION
(see Note A)
–
+
100 kΩ
+
1 µF100 kΩ
100 kΩ
Gain Control
1 MΩ
1 kΩ
10 kΩ
5 V
1 µF
+
0.1 µF
1/4
TLC27M4
+
NOTE A: Low to medium impedance dynamic mike
Figure 46. Microphone Preamplifier
–
+
10 MΩ
VO
VREF
150 pF
100 kΩ
15 nF
VDD
–
+
1 kΩ1/4
TLC27M4
TLC27M4
1/4
NOTE: VDD = 4 V to 15 V
VREF = 0 V to VDD – 2 V
Figure 47. Photo-Diode Amplifier With Ambient Light Rejection
TLC27M4, TLC27M4A, TLC27M4B, TLC27M4Y, TLC27M9
LinCMOS PRECISION QUAD OPERATIONAL AMPLIFIERS
SLOS093C – OCTOBER 1987 – REVISED MAY 1999
36 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
APPLICATION INFORMATION
–
+
VDD
VO
1/4
TLC27M4
1 MΩ
33 pF
100 kΩ
1N4148
100 kΩ
NOTE: VDD = 8 V to 16 V
VO = 5 V, 10 mA
Figure 48. Low-Power Voltage Regulator
–
+
10 kΩ
TLC27M4
1/4 VO
100 kΩ
100 kΩ
0.1 µF
1 MΩ
0.22 µF
1 MΩ
VI
0.01 µF
5 V
Figure 49. Single-Rail AC Amplifier
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