NVTFS5C680NL MOSFET - Power, Single N-Channel 60 V, 26.5 mW, 20 A Features * * * * * * www.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVTFS5C680NLWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(on) MAX 26.5 mW @ 10 V 60 V 42.5 mW @ 4.5 V MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Parameter Symbol Value Unit Drain-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGS 20 V ID 20 A Continuous Drain Current RqJC (Notes 1, 2, 3, 4) TC = 25C Power Dissipation RqJC (Notes 1, 2, 3) Continuous Drain Current RqJA (Notes 1 & 3, 4) Steady State TC = 100C TC = 25C TA = 25C Power Dissipation RqJA (Notes 1, 3) Pulsed Drain Current Steady State ID 6.54 PD Operating Junction and Storage Temperature Source Current (Body Diode) MARKING DIAGRAM A 7.82 1 W 3.0 TA = 100C TA = 25C, tp = 10 ms S (1, 2, 3) 10 TA = 100C TA = 25C N-Channel D (5 - 8) W 20 TC = 100C 20 A G (4) 14 PD ID MAX 2.1 IDM 80 A TJ, Tstg -55 to +175 C IS 17 A Single Pulse Drain-to-Source Avalanche Energy (IL(pk) = 1 A) EAS 51 mJ Lead Temperature for Soldering Purposes (1/8 from case for 10 s) TL 260 C WDFN8 (m8FL) CASE 511AB XXXX A Y WW G 1 S S S G XXXX AYWWG G D D D D = Specific Device Code = Assembly Location = Year = Work Week = Pb-Free Package (Note: Microdot may be in either location) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION See detailed ordering, marking and shipping information in the package dimensions section on page 5 of this data sheet. THERMAL RESISTANCE MAXIMUM RATINGS (Note 1) Parameter Symbol Value Unit Junction-to-Case - Steady State (Note 3) RqJC 7.32 C/W Junction-to-Ambient - Steady State (Note 3) RqJA 49 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Psi (Y) is used as required per JESD51-12 for packages in which substantially less than 100% of the heat flows to single case surface. 3. Surface-mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 4. Continuous DC current rating. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. (c) Semiconductor Components Industries, LLC, 2016 August, 2019 - Rev. 2 1 Publication Order Number: NVTFS5C680NL/D NVTFS5C680NL ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Parameter Symbol Test Condition Min V(BR)DSS VGS = 0 V, ID = 250 mA 60 Typ Max Unit OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Zero Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current VGS = 0 V, VDS = 60 V V TJ = 25C 10 TJ = 125C 100 100 mA IGSS VDS = 0 V, VGS = +20 V nA Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 13 mA 2.2 V Drain-to-Source On Resistance RDS(on) VGS = 10 V, ID = 10 A 22 26.5 mW VGS = 4.5 V, ID = 10 A 34 42.5 gFS VDS = 15 V, ID = 10 A 20 S Input Capacitance Ciss 327 pF Output Capacitance Coss VGS = 0 V, f = 1.0 MHz, VDS = 25 V Reverse Transfer Capacitance Crss 6.0 Total Gate Charge QG(TOT) 2.9 nC Threshold Gate Charge QG(TH) 0.8 nC Gate-to-Source Charge QGS Gate-to-Drain Charge QGD ON CHARACTERISTICS (Note 5) Forward Transconductance 1.2 CHARGES AND CAPACITANCES Total Gate Charge QG(TOT) VGS = 4.5 V, VDS = 48 V, ID = 10 A 161 1.2 0.8 VGS = 10 V, VDS = 48 V, ID = 10 A 6.0 nC 6.5 ns SWITCHING CHARACTERISTICS (Note 6) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(on) tr td(off) VGS = 4.5 V, VDS = 48 V, ID = 10 A, RG = 1.0 W tf 25 13 23 DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD TJ = 25C 0.9 TJ = 125C 0.8 tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 10 A 17 VGS = 0 V, dlS/dt = 100 A/ms, IS = 10 A QRR 1.2 V ns 8.0 9.0 7.0 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%. 6. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NVTFS5C680NL TYPICAL CHARACTERISTICS VDS = 10 V 3.6 V 20 3.4 V 15 3.2 V 10 3.0 V 2.8 V 2.6 V 5 0 0.5 1.0 1.5 2.0 20 15 10 TJ = 25C 5 0 2.5 TJ = 125C 0 3 4 Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 45 40 35 30 25 20 4 5 6 7 8 9 10 VGS, GATE-TO-SOURCE VOLTAGE (V) 5 50 TJ = 25C 45 40 35 VGS = 4.5 V 30 25 VGS = 10 V 20 15 5 6 8 7 9 10 ID, DRAIN CURRENT (A) Figure 3. On-Resistance vs. Gate-to-Source Voltage Figure 4. On-Resistance vs. Drain Current and Gate Voltage 100000 2.2 RDS(on), NORMALIZED DRAIN-TO- SOURCE RESISTANCE TJ = -55C 2 VGS, GATE-TO-SOURCE VOLTAGE (V) TJ = 25C ID = 10 A 2.0 1 VDS, DRAIN-TO-SOURCE VOLTAGE (V) 50 3 25 ID, DRAIN CURRENT (A) 25 0 RDS(on), DRAIN-TO-SOURCE RESISTANCE (mW) 30 VGS = 3.8 V to 10 V RDS(on), DRAIN-TO-SOURCE RESISTANCE (mW) ID, DRAIN CURRENT (A) 30 VGS = 10 V ID = 10 A TJ = 150C 10000 IDSS, LEAKAGE (nA) 1.8 1.6 1.4 1.2 1.0 1000 TJ = 125C 100 TJ = 85C 10 1 TJ = 25C 0.1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 175 0.01 5 15 25 35 45 55 TJ, JUNCTION TEMPERATURE (C) VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current vs. Voltage www.onsemi.com 3 NVTFS5C680NL TYPICAL CHARACTERISTICS VGS, GATE-TO-SOURCE VOLTAGE (V) 1000 C, CAPACITANCE (pF) CISS COSS 100 10 CRSS VGS = 0 V TJ = 25C f = 1 MHz 1 0 10 20 30 40 50 60 0 0 1 2 4 3 5 VGS = 0 V IS, SOURCE CURRENT (A) t, TIME (ns) VDS = 48 V TJ = 25C ID = 10 A 2 10 td(on) VGS = 4.5 V VDS = 48 V ID = 10 A 1 10 TJ = 25C TJ = 125C 1 100 TJ = -55C 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 RG, GATE RESISTANCE (W) VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 10 TC = 25C VGS 10 V Single Pulse TJ (initial) = 25C IPEAK, (A) ID, DRAIN CURRENT (A) QGD QGS Figure 8. Gate-to-Source vs. Total Charge 10 10 1 0.1 4 Figure 7. Capacitance Variation td(off) 100 6 QG, TOTAL GATE CHARGE (nC) tf tr 1000 8 VDS, DRAIN-TO-SOURCE VOLTAGE (V) 100 1 10 RDS(on) Limit Thermal Limit Package Limit 0.1 1 10 10 ms 0.5 ms 10 ms 100 TJ (initial) = 100C 1 1 ms 0.1 1000 0.00001 0.0001 0.001 VDS (V) TIME IN AVALANCHE (s) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. IPEAK vs. Time in Avalanche www.onsemi.com 4 0.01 NVTFS5C680NL TYPICAL CHARACTERISTICS 100 50% Duty Cycle R(t) (C/W) 10 1 20% 10% 5% 2% 1% 0.1 Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE TIME (sec) Figure 13. Thermal Characteristics DEVICE ORDERING INFORMATION Marking Package Shipping NVTFS5C680NLTAG 680L WDFN8 (Pb-Free) 1500 / Tape & Reel NVTFS5C680NLWFTAG 80LW WDFN8 (Pb-Free) 1500 / Tape & Reel Device For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WDFN8 3.3x3.3, 0.65P CASE 511AB ISSUE D 1 SCALE 2:1 DATE 23 APR 2012 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D A D1 B 2X 0.20 C 8 7 6 5 4X E1 E q c 1 2 3 4 A1 TOP VIEW 0.10 C A e SIDE VIEW 0.10 8X b C A B 0.05 C 4X DETAIL A 8X e/2 1 0.42 4 INCHES NOM 0.030 --- 0.012 0.008 0.130 BSC 0.116 0.120 0.078 0.083 0.130 BSC 0.116 0.120 0.058 0.063 0.009 0.012 0.026 BSC 0.012 0.016 0.026 0.032 0.012 0.017 0.002 0.005 0.055 0.059 0_ --- MIN 0.028 0.000 0.009 0.006 MAX 0.031 0.002 0.016 0.010 0.124 0.088 0.124 0.068 0.016 0.020 0.037 0.022 0.008 0.063 12 _ 0.65 PITCH PACKAGE OUTLINE 4X 0.66 M E3 8 5 D2 BOTTOM VIEW 1 3.60 L1 GENERIC MARKING DIAGRAM* XXXXX A Y WW G MILLIMETERS MIN NOM MAX 0.70 0.75 0.80 0.00 --- 0.05 0.23 0.30 0.40 0.15 0.20 0.25 3.30 BSC 2.95 3.05 3.15 1.98 2.11 2.24 3.30 BSC 2.95 3.05 3.15 1.47 1.60 1.73 0.23 0.30 0.40 0.65 BSC 0.30 0.41 0.51 0.65 0.80 0.95 0.30 0.43 0.56 0.06 0.13 0.20 1.40 1.50 1.60 0_ --- 12 _ SOLDERING FOOTPRINT* L G SEATING PLANE DETAIL A K E2 C 6X 0.10 C DIM A A1 b c D D1 D2 E E1 E2 E3 e G K L L1 M q XXXXX AYWWG G 0.75 2.30 0.57 0.47 2.37 3.46 DIMENSION: MILLIMETERS = Specific Device Code = Assembly Location = Year = Work Week = Pb-Free Package *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. *This information is generic. Please refer to device data sheet for actual part marking. Pb-Free indicator, "G" or microdot " G", may or may not be present. DOCUMENT NUMBER: DESCRIPTION: 98AON30561E WDFN8 3.3X3.3, 0.65P Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped "CONTROLLED COPY" in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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