© Semiconductor Components Industries, LLC, 2008
May, 2008 − Rev. 5
1Publication Order Number:
NP0640S/D
NP Series
Preferred Devices
Thyristor Surge Protectors
High Voltage Bidirectional
NP Series Thyristor Surge Protector Devices (TSPD) protect
telecommunication circuits such as central office, access, and
customer premises equipment from overvoltage conditions. These are
bidirectional devices so they are able to have functionality of 2 devices
in one package, saving valuable space on board layout.
These devices will act as a crowbar when overvoltage occurs and will
divert the energy away from circuit or device that is being protected.
Use of the NP Series in equipment will help meet various regulatory
requirements including: GR−1089−CORE, IEC 61000−4−5, ITU
K.20/21/45, IEC 60950, TIA−968−A, FCC Part 68, EN 60950,
UL 1950.
ELECTRICAL PARAMETERS
Device
VDRM V(BO) VTIDRM I(BO) ITIH
V V V mAmA A mA
NP0640SxT3G 58 77 4 5 800 2.2 150
NP0720SxT3G 65 88 4 5 800 2.2 150
NP0900SxT3G 75 98 4 5 800 2.2 150
NP1100SxT3G 90 130 4 5 800 2.2 150
NP1300SxT3G 120 160 4 5 800 2.2 150
NP1500SxT3G 140 180 4 5 800 2.2 150
NP1800SxT3G 170 220 4 5 800 2.2 150
NP2100SxT3G 180 240 4 5 800 2.2 150
NP2300SxT3G 190 260 4 5 800 2.2 150
NP2600SxT3G 220 300 4 5 800 2.2 150
NP3100SxT3G 275 350 4 5 800 2.2 150
NP3500SxT3G 320 400 4 5 800 2.2 150
G = indicates leadfree, RoHS compliant
SURGE DATA RATINGS
Specification
Waveform x = series ratings
Unit
Voltage
ms
Current
msABC
GR−1089−CORE 2x10 2x10 150 250 500 A(pk)
TIA−968−A 10x160 10x160 90 150 200
GR−1089−CORE 10x360 10x360 75 125 175
TIA−968−A 10x560 10x560 50 100 150
ITU−T K.20/21 10x700 5x310 75 100 200
GR−1089−CORE 10x1000 10x1000 50 80 100
* Recognized Components
BIDIRECTIONAL SURFACE
MOUNT THYRISTOR
64 − 350 VOLTS
Preferred devices are recommended choices for future use
and best overall value.
MT1 MT2
SMB
JEDEC DO−214AA
CASE 403C
xxxx = Specific Device Code
Y = Year
WW = Work Week
G= Pb−Free Package
(Note: Microdot may be in either location)
MARKING DIAGRAM
AYWW
xxxxG
G
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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristics (Note 1) Symbol Min Typ Max Unit
Breakover Voltage (Both Polarities)
NP0640SxT3G
NP0720SxT3G
NP0900SxT3G
NP1100SxT3G
NP1300SxT3G
NP1500SxT3G
NP1800SxT3G
NP2100SxT3G
NP2300SxT3G
NP2600SxT3G
NP3100SxT3G
NP3500SxT3G
V(BO) 77
88
98
130
160
180
220
240
260
300
350
400
V
Off−State Voltage (Both Polarities)
NP0640SxT3G
NP0720SxT3G
NP0900SxT3G
NP1100SxT3G
NP1300SxT3G
NP1500SxT3G
NP1800SxT3G
NP2100SxT3G
NP2300SxT3G
NP2600SxT3G
NP3100SxT3G
NP3500SxT3G
VDRM 58
65
75
90
120
140
170
180
190
220
275
320
V
Off State Current ( VD1 = 50 V ) Both Polarities
( VD2 = VDRM ) Both Polarities
IDRM1
IDRM2
2.0
5.0
mA
mA
Holding Current (Both Polarities) (Note 4) VS = 500 V; IT = 2.2 A IH150 250 −mA
On−State Voltage IT = 1.0 A(pk) (PW = 300 mSec, DC = 2%) VT− − 4.0 V
Maximum Non−Repetitive Rate of Change of On−State Current (Note 1)
(Haefely test method, 1.0 pk < 100 A)
di/dt − − 500 A/mSec
Critical Rate of Rise of Off−State Voltage
(Linear Waveform, VD = 0.8 VDRM, TJ = 25°C)
dv/dt 5.0 − − kV/mSec
CAPACITANCE
Characteristics Symbol
Typ
Unit
ABC
(f=1.0 MHz, 1.0 Vrms, 2 Vdc bias)
NP0640SxT3G
NP0720SxT3G
NP0900SxT3G
NP1100SxT3G
NP1300SxT3G
NP1500SxT3G
NP1800SxT3G
NP2100SxT3G
NP2300SxT3G
NP2600SxT3G
NP3100SxT3G
NP3500SxT3G
Co84
79
65
58
46
44
39
37
36
33
31
28
129
123
122
95
75
70
59
59
56
52
47
44
222
198
122
154
120
113
99
97
56
81
76
71
pF
1. Electrical parameters are based on pulsed test methods.
2. di/dt must not be exceeded of a maximum of 100 A/mSec in this application.
3. Measured under pulsed conditions to reduce heating
4. Allow cooling before testing second polarity.
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SURGE RATINGS
Characteristics Symbol A B C Unit
Nominal Pulse
Surge Short Circuit Current Non – Repetitive
Double Exponential Decay Waveform (Notes 5, 6 and 7)
2 x 10 mSec
10 x 160 mSec
10 x 360 mSec
10 x 560 mSec
10 x 700 mSec
10 x 1000 mSec
IPPS1
IPPS3
IPPS4
IPPS5
IPPS6
IPPS7
150
90
75
50
75
50
250
150
125
100
100
80
500
200
150
150
200
100
A(pk)
5. Allow cooling before testing second polarity.
6. Measured under pulse conditions to reduce heating.
7. Nominal values may not represent the maximum capability of a device.
THERMAL CHARACTERISTICS
Symbol Rating Value Unit
TSTG Storage Temperature Range −65 to +150 °C
TJOperating Temperature Range −40 to +150 °C
R0JA Thermal Resistance: Junction−to−Ambient Per EIA/JESD51−3, PCB = FR4 3”x4.5”x0.06”
Fan out in a 3x3 inch pattern, 2 oz copper track.
90 °C/W
Figure 1. Exponential Decay Pulse Waveform
TIME (ms)
0
50
0
Ipp - PEAK PULSE CURRENT - %Ipp
100
tr = rise time to peak value
tf = decay time to half value
trtf
Peak
Value
Half Value +Voltage−Voltage
−I
+I
VTVDRM V(BO)
IT
I(BO)
IH
Figure 2. Voltage Current Characteristics of TSPD
Symbol Parameter
VDRM Peak Off State Voltage
V(BO) Breakover Voltage
I(BO) Breakover Current
IHHolding Current
VTOn State Voltage
ITOn State Current
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4
ORDERING INFORMATION
Part Number Marking Case Shipping†
NP0640SAT3G 064A
SMB
(Pb−Free) 2500 / Tape and Reel
NP0640SBT3G 064B
NP0640SCT3G 064C
NP0720SAT3G 072A
NP0720SBT3G 072B
NP0720SCT3G 072C
NP0900SAT3G 090A
NP0900SBT3G 090B
NP0900SCT3G 090C
NP1100SAT3G 110A
NP1100SBT3G 110B
NP1100SCT3G 110C
NP1300SAT3G 130A
NP1300SBT3G 130B
NP1300SCT3G 130C
NP1500SAT3G 150A
NP1500SBT3G 150B
NP1500SCT3G 150C
NP1800SAT3G 180A
NP1800SBT3G 180B
NP1800SCT3G 180C
NP2100SAT3G 210A
NP2100SBT3G 210B
NP2100SCT3G 210C
NP2300SAT3G 230A
NP2300SBT3G 230B
NP2300SCT3G 230C
NP2600SAT3G 260A
NP2600SBT3G 260B
NP2600SCT3G 260C
NP3100SAT3G 310A
NP3100SBT3G 310B
NP3100SCT3G 310C
NP3500SAT3G 350A
NP3500SBT3G 350B
NP3500SCT3G 350C
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
PACKAGE DIMENSIONS
A
S
DB
J
P
K
C
H
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. D DIMENSION SHALL BE MEASURED WITHIN
DIMENSION P.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.160 0.180 4.06 4.57
B0.130 0.150 3.30 3.81
C0.075 0.095 1.90 2.41
D0.077 0.083 1.96 2.11
H0.0020 0.0060 0.051 0.152
J0.006 0.012 0.15 0.30
K0.030 0.050 0.76 1.27
P0.020 REF 0.51 REF
S0.205 0.220 5.21 5.59
SMB
CASE 403C−01
ISSUE A
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
ǒmm
inchesǓ
SCALE 8:1
2.743
0.108
2.159
0.085
2.261
0.089
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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Phone: 81−3−5773−3850
NP0640S/D
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