Semiconductor Components Industries, LLC, 2002
January, 2002 – Rev. 1 1Publication Order Number:
MBR835/D
MBR835, MBR840, MBR845
Preferred Devices
Axial Lead Rectifiers
. . . employing the Schottky Barrier principle in a large area
metal–to–silicon power diode. State–of–the–art geometry features
epitaxial construction with oxide passivation and metal overlap
contact. Ideally suited for use as rectifiers in low–voltage,
high–frequency inverters, free wheeling diodes, and polarity
protection diodes.
•High Current Capability
•Low Stored Charge, Majority Carrier Conduction
•Low Power Loss/High Efficiency
•Highly Stable Oxide Passivated Junction
•Guard–Ring for Stress Protection
•Low Forward Voltage
•High Surge Capacity
Mechanical Characteristics:
•Case: Epoxy, Molded
•Weight: 1.1 gram (approximately)
•Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
•Lead and Mounting Surface Temperature for Soldering Purposes:
220°C Max. for 10 Seconds, 1/16″ from case
•Shipped in plastic bags, 500 per bag
•Available Tape and Reeled, 1500 per reel, by adding a “RL’’ suffix to
the part number
•Polarity: Cathode indicated by Polarity Band
•ESD Protection: Human Body Model > 4000 V (Class 3)
ESD Protection: Machine Model > 400 V (Class C)
MAXIMUM RATINGS
Rating Symbol Max Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage MBR835
MBR840
MBR845
VRRM
VRWM
VR35
40
45
V
Average Rectified Forward Current
TL = 75°C (PsiJL = 12°C/W,
P.C. Board Mounting, see Note 2)
IO8.0 A
Non–Repetitive Peak Surge Current
(Surge Applied at Rated Load
Conditions Halfwave, Single
Phase, 60 Hz)
IFSM 140 A
Operating and Storage Junction
Temperature Range
(Reverse Voltage Applied)
TJ, Tstg –65 to +125 °C
Voltage Rate of Change (Rated VR) dv/dt 10 V/ns
Device Package Shipping
ORDERING INFORMATION
http://onsemi.com
AXIAL LEAD
CASE 267–05
(DO–201AD)
STYLE 1
SCHOTTKY BARRIER
RECTIFIERS
8.0 AMPERES
Preferred devices are recommended choices for future use
and best overall value.
MBR835 Axial Lead 500 Units/Bag
MBR835RL Axial Lead 1500/Tape & Reel
MARKING DIAGRAM
MBR8xx
MBR8xx = Device Code
xx = 35, 40 or 45
MBR840 Axial Lead 500 Units/Bag
MBR840RL Axial Lead 1500/Tape & Reel
MBR845 Axial Lead 500 Units/Bag
MBR845RL Axial Lead 1500/Tape & Reel
MBR835, MBR840, MBR845
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic Symbol 0.9 in x 0.9 in
Copper Pad Size 6.75 in x 6.75 in
Copper Pad Size Unit
Thermal Resistance – Junction–to–Lead
(See Note 2 – Mounting Data)
Thermal Resistance – Junction–to–Ambient
(See Note 2 – Mounting Data)
RθJL
RθJA
13
50
12
40
°C/W
ELECTRICAL CHARACTERISTICS (TL = 25°C unless otherwise noted)
Characteristic Symbol Max Unit
Maximum Instantaneous Forward Voltage (Note 1)
(iF = 8.0 Amps, TL = 25°C) vF0.55 V
Maximum Instantaneous Reverse Current @ Rated dc Voltage (Note 1)
TL = 25°C
TL = 100°C
iR1.0
50
mA
1. Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2.0%.
Figure 1. Typical Forward Voltage
VF, INSTANTANEOUS VOLTAGE (VOLTS)
30
10
1
0.80.70.60.50.40.30.20.1
Figure 2. Maximum Forward Voltage
0.1
Figure 3. Typical Reverse Current
VR, REVERSE VOLTAGE (VOLTS)
1E–01
1E–02
1E–03
1E–04
35302510 201550
1E–06
IF, INSTANTANEOUS FORWARD
CURRENT (AMPS)
IR, INSTANTANEOUS REVERSE CURRENT (AMPS)
504540
1E–05
125°C
25°C
100°C
75°C
125°C
25°C
100°C
75°C
VF, INSTANTANEOUS VOLTAGE (VOLTS)
30
10
1
0.80.70.60.50.40.30.20.1
0.1
IF, INSTANTANEOUS FORWARD
CURRENT (AMPS)
125°C
25°C
100°C
75°C
MBR845
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Typical Capacitance
f = 1 MHz
TJ = 25°C
1001010.1
C, CAPACITANCE (pF)
100
1000
10,000
MBR835, MBR840, MBR845
http://onsemi.com
3
RJA (°C/W)
Figure 5. RJA versus Copper Area
See Note 2
10420
COPPER AREA (sq in)
30
TL, LEAD TEMPERATURE (°C)
Figure 6. Current Derating – Lead
SQUARE
WAVE
14040200
IF, AVERAGE FORWARD
CURRENT (AMPS)
0
IO, AVERAGE FORWARD CURRENT (AMPS)
Figure 7. Forward Power Dissipation
TJ = 125°C
10620
PFO, AVERAGE POWER
DISSIPATION (WATTS)
0
35
40
45
50
55
60
65
70
75
86 8060 100 120
1
2
3
4
5
6
7
8
9
dc
RJL = 12°C/W
48
0.5
1
1.5
2
2.5
3
3.5
4
4.5
SQUARE
WAVE
dc
NOTE 2 — MOUNTING DATA
ÉÉ
ÉÉ
ÉÉ
ÉÉ
ÉÉ
ÉÉ
ÉÉ
ÉÉ
Mounting Method
P.C. Board with 6.75 sq. in.
copper surface.
Board Ground Plane
L = 3/8
0.1
t, TIME (sec)
1001.0
0.001
10
1
0.1
0.0001 0.1 1000
Figure 8. Thermal Response, Junction–to–Ambient
0.2
0.01
SINGLE PULSE
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.010.001
0.01
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
D = 0.5
0.05
Copper Area = 0.271 sq. in.
RJA = 61.8 °C/W
MBR835, MBR840, MBR845
http://onsemi.com
4
PACKAGE DIMENSIONS
AXIAL LEAD
CASE 267–05
(DO–201AD)
ISSUE G
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
STYLE 1:
PIN 1. CATHODE (POLARITY BAND)
2. ANODE
12
KA
K
D
B
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.287 0.374 7.30 9.50
B0.189 0.209 4.80 5.30
D0.047 0.051 1.20 1.30
K1.000 --- 25.40 ---
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4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031
Phone: 81–3–5740–2700
Email: r14525@onsemi.com
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Sales Representative.
MBR835/D
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