SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A Z % RT ... Replacement Type; consult manufacturer. Indicators of separate manufacturers producing same type number (non-JEDEC) whose characteristics are not the same. This manufacturer-identifying symbol (assigned by D.A.1.A.) is an integral part of the type number {in Type No. Cross Index, Technical Data Sections) to avoid the possibility of confusing the devices of one manufacturer with the devices of others. SYMBOLS & CODES COMMON TO MORE THAN ONE TECHNICAL SECTION LINE No. Vv New Type Revised Specifications # Non-JEDEC Type manufactured t_ @- TYPE No. outside U.S.A. i 6 , i LINE TYPE OLL. IN |M E[BVel No. No. DISS. | fab [FREE |A M @25C AIR. [XP Ww we vi ; @ With infinite heat sink Following symbols indicate temperature at which derating starts: T- 40c i- ec = 100% * 45C - 7C 4 Min. #-~ 50C =A 85C T- tae Gain bandwidth product (f,) %* Maximum frequency of oscillation QD ~ Figure of merit (frequency for unity power gain} A Minimum Z- Maximum Q ~ With infinite heat sink E * 50-65C A Ambient 70-80c C Case # - 85-100C J Junction # 110-125C S Storage T 130-135C $ 140-165C 170-200C Over 200C STRUCTURE (All Sections A Alloy Except 6 & 7} Switching type, also listed in Section 12 AN Annular - a . . D ~ Diffused or drift Chopper, also listed in Section 13, Category 10 pM Diftused These types also included elsewhere with other E 7 E, tons fee characteristics. See Type No. Cross Index for pt axial : EA Epitaxial annular alternate line no. EM Epitaxial mesa Radiation Resistant Devices, also listed in FE _ Feeed Section 13, Category 13, G ~ Grown GA Gallium Arsenide H Hometaxial MA Mico alloy MD Micro alloy diffused ME Mesa MOS Metal oxide silicon PA, Precision alloy PC Point contact PD Precision alioy diffused PE Ptanar epitaxial PL Planar Ss Surface barrier * Matched pair A Switching, other uses Z Chopper, other uses Z Noise figure 8db or below t Plastic package % Overlay ye i \ I ' Mai , cao |BVebo | Icbo. BIAS Cob |STRUC|Y200 le 0 le @MAX! Veb le hfe hoe hie hre -TURE | s/a JAD Veb TO200/D E Vv) A) Al Vv (A) mh 1 Ser, 9 fe QD lo A- lp b h parameters are Pope Pine Mb 74] Maximum D Vee 0) t- Nee A Minimum Pulsed Maximum At Va, Max. V., (See Mfr. Spec.) # aise 68 CB 8 hee Typical CEX yptca %* Available in selected ranges -1 * ~ 'cER CES AtTemp.> 28 =A 'cEO ~ AtTemp. 25C Case # Pulsed or Peak ~ i hb - q iis 7] Maximum $ Co T-c, $ Minimum po $ Tetrode # - BVcex or punch-through D av # Radiation Resistant Device CES (A - BV eo (sus) {Also See Above) .- BVoER * Pulsed $- Indicates min. valves given for BY cb, EV ceo, and BV abo,IN ORDER OF (1) MAX COLLECTOR DISSIPATION E Cob jSTRUC)Y200 jE 0 M -TURE | s/a JAD Pp TO200/D E LINE TYPE (NM No. No. DISS. | fab FREE jA @25C AIR 250m |100M8A/1.4m_ [8J . 1.0uZb | 324 | 20M |8.0pa X34 fm . . u M1726 250m |180M [1.7m [SJ 5.0p u13 m . i p AT332 250m |200M |2.5m |J : t : 25p 4am . MD3134F* 250m |200M8A| 1.4m |8J : 1 am . . 7p BSS22t 250m |400MSA|2.5m |sS : : 30 6.0p4 BC261 300m 2.0m |8J . 5.08 |2. 125 .#m . . NS1864 300m 17m |8J 6.0% |1.0md| 50 253220 300m |.15M54 15 R51 ./m . + 283230 300m |.25M8A 25 R51 2$3240 300m = |.40M54 40 R51 283021 300m |.80M |1.7m OD |. 4 . ZA11 27153 300m | 30M8A\2.4m . : 35 , ; TO18 2N1132/51 300m | 6O0M3A|2.0m . 30 TOS 2SA604 300m |100MSA/|2.4m ; : 40 TO18 GI3702 300m |100M |3.0m 5: 60 RO7d ST8705 300m |100Ms |1.6m : 5.0D |500ud TO18 TE5448 300m |100M |2.3m : 5.0 | 50m TO106/A .#m . A171 300m }130M8 |2.0m : TO18 |Ag m . 2N2391 300m |140M8A)/2.0m : : u25 OIA V205t 300m |160M |2.0m : 0: . . DPEZ|TO18 | A m . . AT413 300m |200MA8|2.4m f : PE |MM124D ATA16 300m |200MA8/2.4m : : PE IMM12aD AT419 300m |200M (2.4m : : PE. IMM1 BCW52 300m |200M8A m . BFS34 300m |200M_ |2.4m 104|2:0md ta GI3638At 300m |250M |3.0m : 15 A QD401-71* 300m |300MSA/1.7m : 100 ta m . . BSV55At 300m |400M |2.4m : 30 tA : u34 V4o5t 300m |400MA/2.0m 3.0 . : 20 tA : TO18 -/m . : p QD404-71* 300m = /(450M8A/ 1.7m 6.0 5O00pm |5. 100 TA 5 L2p RT2462t 300m /|800MSA/1.7m 5.0 05ug |. 1 20 tA TO18 TE3905t 310m |200M8A/2.8m 5.0 [200m | 50n 1.0mZ} 50 A 40ud [8.0K [500 [4 TO106|A : : 4 p TE4126 310m |250M8A/2.8m 4.0 |200m | 50nd | 10B/2.0m 1120 a TO106/A . m : . : OC703A 330m* |.50M 3.1m 30| 50m /.10ud |6. 15m R42 * : -1m . ; . OC700A 330m* |1.7M 3.tm 25; 50m |.10uf |6.0% | 1.0m 25 * 1m . 5 . 0C702B 330m* |2.2M 3.1m 10/; 50m |.10ug 6: 1.0m 70 * om SYMBOLS AND CODES 48 D.A.T.A. EXPLAINED IN INTERPRETER 48b> CQew + LINE No. Vv - - #- SYMBOLS & CODES COMMON TO MORE THAN ONE TECH New Type Revised Specifications Non-JEDEC type manufactured outside U'S.A. TYPE No. SYMBOLS & CODES EXPLAINED Switching type, also listed in Section 12 Chopper, also listed in Section 13, Category 10 These types also included elsewhere with other characteristics. See Type No. Cross Index for alternate line number. Radiation Resistant Devices, also listed in Section 13, Category 13. ICAL SECTION wo fa, Gain bandwidth product (f-) Maximum frequency of oscillation Figure of merit (frequency for unity power gain) Minimum Maximum I Charge storage time constant Stored base charge picocoulomb Total switching time Ton = t + ty Typical Value ee Tort = ts + ty Typical Value Ton + Tote =td+ tr + tf + ts LINE No. TYPE No. [2] RISE [DELAY TIME | TIME STRUCTURE (Atl Sections A Alloy Except 6 & 7} AN Annular D Diffused or drift DM - Diffused mesa E Epitaxial EA -~ Epitaxial annular EM Epitaxial mesa F Fused G Grown GA Gallium Arsenide H Hometaxial MA -- Mico alloy MD Micro alloy diffused ME - Mesa MOS Metal oxide silicon PA, Precision alloy PC Point contact PD Precision alloy diffused PE Planar epitaxial PL Planar s Surface barrier to Matched pair ~ Switching, other uses Chopper, other uses Noise figure 8db or below Plastic package ~ Overlay * THESE TYPES ALSO INCLUDED ELSEWHERE WITH OTHER CHARACTERISTICS SEE TYPE NO. CROSS INDEX FOR ADDITIONAL PAGE & LINE NO. Pulsed Minimum Maximum Available to selected range narrower than indicated - Yes in millimho (FETs only). Bias values are Vos & 'b . | Cob SAT. xX Tt - "bp rbb PP +him vw 24 NP Cob |N-NPN i A|TEMP: T OWG. No. ormr moo Ge Germanium Si Siticon Tetrode NPN or N Channel PNP or P Channel Field Effect Transistor Radiation Resistant Device (See above also) D With infinite heat sink Following symbols indicate temperature at which derating starts: f - 40c 70 * ~ 45C $- 100C or greater # 50C @ 80C ~ 60C A- Pulsed A ~- Maximum $ ~ Cob - Ron (FETs only) # Pulsed - Coes (FET's only} SISTORS A Ambient Cc Case J Junction Ss Storage DESCRIPTION a 1 Avalanche Mode 10 - 2 Bi-directional 11 - Unmatched Ge Germanium 3 Field Effect Composite (Dual) Si Silicon 4 Hook Collector 12 Cryogenic 5 ~ Complementary 13 Radiation Symmetry (PNP & Resistant Devices NPN) Matched Pair 14 Pressure Sensitive N -~ NPN or N Channel See TECHNICAL TERM DEFINITIONS Section | 6 Matched Pair 15 Transistor chips P PNP or P Channel 7 Phototransistor 16 Darlington (See above also) 8 - Tetrode 17 Microwave 9 Unijunction: NN-type emitter (P-type Base) PP-type emitter (N-type Base)IN ORDER OF (1) fab, (2) MAX RISE TIME & TYPE RISE DELAY) STORE| FALL /IN FREE MAX. | Cob rbb |STRUCTURE/M/MAX.;200_ |E O No. fab TIME | TIME | TIME | TIME | AIR Vcb X |P-PNP A|TEMP) s/a AD tr td ts tf | N-NPN T T0200 |DE MA393E 25.0M5A 75nB | 30m TO1 2N1 25.0MA | 235n@ 100m . i TOS 1843-3705 25M5A 85 Zs |5. : i 703 2N496/18 28.8M5A 150m .5 . i TO18 . . u 2N907 30.0M 150m : : i ut0 2N2225 30.0M 200m __ |. : TOS 1743-1610 30M5A 85 $ |2: i TO3 1743-1420 30M 85 i 103 1743-0830 30M5A i TO3 1748-1630 30MSA i TO63 1748-1820 30MSA| 600n i TO63 2SA327 35.0M 80n : 2.5 TO44 TN71 40.0M$ 45n ign 500m | 100p i TOS 4645 5Ont | 30nt 5.0 20 i TO39 NPC12-1A 40MSA n Oud | 28h , i TO66 NPC 13-2 40M5A 1 50 D TO3 2N1660 40.0M5 1.4ut 85mS , , i MS3 2N1896 40.0M8 | 110nt 14ut | 85mo , : i MT16 TIP14 40MSA| 150ng 600ng [2.0 . . i x43 TN303 40.0M | 150n_ | 50n 200n | 308 |1: MT47 1716-0402 40MSA| 300n@ 300n | 87 . ; , i TO61 1716-1002 40M5A 300n | 87 : i TO61 17 16-1602 40MSA 300n | 87 i TO61 1716-0405 40M5A 300n | 87 : TO61 1716-1005 40M5A 300n 87 : TO61 1716-1605 40MA 300n | 87 : : : i TO61 2S5A375 40.0M 200n : : . . TOI 2N867 50.0MA$ i 1018 ST160 50.0MSA ' i TOS ST163 50.0M5A h i TOS TN52 50.0MS : i i MT26 BSW39 5OM5A . : . i TO39 28A312 50.0M . : TO5 NPC14-1B SOMSA i TO3 . u 2N1508 | SOM5A . . i TO39 2N1680 5OMSA : : i TO39 u SYMBOLS AND CODES 116 D.A.T.A. EXPLAINED IN INTERPRETER 116