© Semiconductor Components Industries, LLC, 2015
July, 2015 − Rev. 3 1Publication Order Number:
NTTFS4H07N/D
NTTFS4H07N
Power MOSFET
25 V, 66 A, Single N−Channel, m8−FL
Features
•Optimized Design to Minimize Conduction and Switching Losses
•Optimized Package to Minimize Parasitic Inductances
•Optimized material for improved thermal performance
•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
•High Performance DC-DC Converters
•System Voltage Rails
•Netcom, Telecom
•Servers & Point of Load
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter Symbol Value Units
Drain-to-Source Voltage VDSS 25 V
Gate-to-Source Voltage VGS ±20 V
Continuous Drain Current RqJA
(TA = 25°C, Note 1) ID18.5 A
Power Dissipation RqJA
(TA = 25°C, Note 1) PD2.64 W
Continuous Drain Current RqJC
(TC = 25°C, Note 1) ID66 A
Power Dissipation RqJC
(TC = 25°C, Note 1) PD33.8 W
Pulsed Drain Current (tp = 10 ms) IDM 216 A
Single Pulse Drain-to-Source Avalanche
Energy (Note 1)
(IL = 32 Apk, L = 0.1 mH) (Note 3)
EAS 51 mJ
Drain to Source dV/dt dV/dt 7 V/ns
Maximum Junction Temperature TJ(max) 150 °C
Storage Temperature Range TSTG −55 to
150 °C
Lead Temperature Soldering Reflow (SMD
Styles Only), Pb-Free Versions (Note 2) TSLD 260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be af fected.
1. Values based on copper area of 645 mm2 (or 1 in2) of 2 oz copper thickness
and FR4 PCB substrate.
2. For more information, please refer to our Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
3. This is the absolute maximum rating. Parts are 100% UIS tested at TJ = 25°C,
VGS = 10 V, IL = 21 A, EAS = 22 mJ.
THERMALCHARACTERISTICS
Parameter Symbol Max Units
Thermal Resistance,
Junction-to-Ambient (Note 1 and 4)
Junction-to-Case (Note 1 and 4) RqJA
RqJC 47.3
3.7
°C/W
4. Thermal Resistance RqJA and RqJC as defined in JESD51−3.
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VGS MAX RDS(on) TYP QGTOT
4.5 V 7.1 mW5.7 nC
N−CHANNEL MOSFET
10 V 4.8 mW12.4 nC
PIN CONNECTIONS
m8−FL (3.3 x 3.3 mm)
(Top View) (Bottom View)
See detailed ordering, marking and shipping information on
page 6 of this data sheet.
ORDERING INFORMATION
G (4)
S (1,2,3)
D (5−8)
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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA25 V
Drain−to−Source Breakdown Voltage
Temperature Coefficient V(BR)DSS/
TJ15.5 mV/°C
Zero Gate Voltage Drain Current IDSS VGS = 0 V,
VDS = 20 V TJ = 25°C 1.0 mA
TJ = 125°C 10
Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = 20 V 100 nA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250 mA1.1 2.1 V
Negative Threshold Temperature Coefficient VGS(TH)/TJ3.7 mV/°C
Drain−to−Source On Resistance RDS(on) VGS = 10 V ID = 30 A 3.8 4.8 mW
VGS = 4.5 V ID = 15 A 5.8 7.1
Forward Transconductance gFS VDS = 12 V, ID = 15 A 49 S
CHARGES AND CAPACITANCES
Input Capacitance CISS VGS = 0 V, f = 1 MHz, VDS = 12 V
771
pF
Output Capacitance COSS 525
Reverse Transfer Capacitance CRSS 34
Total Gate Charge QG(TOT)
VGS = 4.5 V, VDS = 12 V; ID = 30 A
5.7
nC
Threshold Gate Charge QG(TH) 2.9
Gate−to−Source Charge QGS 2.5
Gate−to−Drain Charge QGD 1.26
Total Gate Charge QG(TOT) VGS = 10 V, VDS = 12 V; ID = 30 A 12.4 nC
Gate Resistance RGTA = 25°C 1.0 2 W
SWITCHING CHARACTERISTICS (Note 6)
T urn−On Delay Time td(ON)
VGS = 4.5 V, VDS = 12 V, ID = 15 A,
RG = 3.0 W
7.6
ns
Rise Time tr32
T urn−Off Delay Time td(OFF) 11.7
Fall Time tf2.13
SWITCHING CHARACTERISTICS (Note 6)
T urn−On Delay Time td(ON)
VGS = 10 V, VDS = 12 V,
ID = 15 A, RG = 3.0 W
5
ns
Rise Time tr28.3
T urn−Off Delay Time td(OFF) 14.5
Fall Time tf1.65
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage VSD VGS = 0 V,
IS = 10 A TJ = 25°C 0.78 1.1 V
TJ = 125°C 0.65
Reverse Recovery Time tRR
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 10 A
23.4
ns
Charge Time ta11.6
Discharge Time tb11.8
Reverse Recovery Charge QRR 8nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
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TYPICAL CHARACTERISTICS
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)
3.02.52.01.51.00.50
0
20
40
60
4.02.52.01.51.00.50
0
Figure 3. On−Resistance vs. VGS Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
VGS (V) ID, DRAIN CURRENT (A)
981076543
0.003
0.005
7060403010
0.002
0.004
Figure 5. On−Resistance Variation with
Temperature Figure 6. Drain−to−Source Leakage Current
vs. Voltage
TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)
1251007550250−25−50
0.7
0.8
1.0
1.1
1.2
1.4
1.5
1.7
2520155
1E−10
1E−08
1E−07
1E−06
1E−04
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
IDSS, LEAKAGE (A)
30
70
0.008
50
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
0.005
0.006
150
0.9
1.3
1.6 ID = 20 A
VGS = 10 V
TJ = 25°C
VGS = 3.6 V
TJ = 25°C
TJ = −55°C
VDS = 5 V
TJ = 125°C
ID = 30 A T = 25°CVGS = 4.5 V
VGS = 10 V
TJ = 85°C
TJ = 125°C
TJ = 150°C
TJ = 25°C
VGS = 0 V
10
VGS = 3.4 V
VGS = 3.2 V
50
20
40
60
30
70
10
50
3.0 3.5
0.003
0.007
1E−09
10
1E−05
VGS = 3.0 V
3.8 V
0.004
0.006
0.007
0.008
VGS = 10 V to 4 V
20
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TYPICAL CHARACTERISTICS
Figure 7. Capacitance Variation Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
VDS, DRAIN−TO−SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC)
2520151050
0
200
600
800
1400
141086420
0
2
4
6
8
10
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current
RG, GATE RESISTANCE (W)VSD, SOURCE−TO−DRAIN VOLTAGE (V)
100101
1
10
100
1000
1.00.70.60.50.4
0
2
6
10
12
Figure 11. Maximum Rated Forward Biased
Safe Operating Area Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
VDS, DRAIN−TO−SOURCE VOLTAGE (V) TJ, STARTING JUNCTION TEMPERATURE (°C)
1001010.10.01
0.01
0.1
1
10
100
1000
150125100755025
0
2
8
10
16
22
C, CAPACITANCE (pF)
VGS, GATE−TO−SOURCE VOLTAGE (V)
t, TIME (ns)
IS, SOURCE CURRENT (A)
ID, DRAIN CURRENT (A)
EAS, SINGLE PULSE DRAIN−TO−
SOURCE AVALANCHE ENERGY (mJ)
400
1200 TJ = 25°C
VGS = 0 V
Ciss
Coss
Crss
TJ = 25°C
VGS = 10 V
VDD = 12.0 V
ID = 30 A
QT
Qgd
Qgs
td(off)
td(on)
tr
tf
TJ = 125°C TJ = 25°C
VGS = 0 V
0 V < VGS < 10 V
100 ms
1 ms
10 ms
dc
RDS(on) Limit
Thermal Limit
Package Limit
ID = 21 A
6
18
VDD = 15 V
ID = 15 A
VGS = 10 V
1000
12
0.8
20
14
0.9
16
4
8
14
18
50 ms
4
12
20
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TYPICAL CHARACTERISTICS
Figure 13. Thermal Characteristics
PULSE TIME (sec)
0.010.001 10.0001 0.10.00001 100.000001
0.01
0.1
1
10
100
Figure 14. GFS vs. IDFigure 15. Avalanche Characteristics
ID (A) PULSE WIDTH (sec)
6050403020100
0
10
30
50
80
0.001
1
10
100
1000
R(t) (°C/W)GFS (S)
ID, DRAIN CURRENT (A)
100 1000
0.00010.000010.0000010.0000001
60
50% Duty Cycle
Single Pulse
20%
10%
5%
2%
1%
PCB Cu Area 650 mm2
PCB Cu thk 1 oz
20
70
40
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ORDERING INFORMATION
Device Package Shipping†
NTTFS4H07NTAG WDFN8
(Pb-Free) 1500 / Tape & Reel
NTTFS4H07NTWG WDFN8
(Pb-Free) 5000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
WDFN8
(m8FL)
CASE 511AB
MARKING DIAGRAM
(Note: Microdot may be in either location)
1
H07N = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G= Pb−Free Package
1
H07N
AYWWG
G
D
D
D
D
S
S
S
G
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7
PACKAGE DIMENSIONS
WDFN8 3.3x3.3, 0.65P
CASE 511AB
ISSUE D
M1.40 1.50
q0 −−−
_
1.60
12
_
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994
.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH
PROTRUSIONS OR GATE BURRS.
1234
56
TOP VIEW
SIDE VIEW
BOTTOM VIEW
D1
E1 q
D
E
B
A
0.20 C
0.20 C
2X
2X
DIM MIN NOM
MILLIMETERS
A0.70 0.75
A1 0.00 −−−
b0.23 0.30
c0.15 0.20
D
D1 2.95 3.05
D2 1.98 2.11
E
E1 2.95 3.05
E2 1.47 1.60
e0.65 BSC
G0.30 0.41
K0.65 0.80
L0.30 0.43
L1 0.06 0.13
A
0.10 C
0.10 C
DETAIL A
14
8L1
e/2
8X
D2
G
E2
K
b
A0.10 B
C
0.05 C
L
DETAIL A
A1
e
6X
c
4X
C
SEATING
PLANE
5
MAX
0.80
0.05
0.40
0.25
3.15
2.24
3.15
1.73
0.51
0.95
0.56
0.20
M
*For additional information on our Pb−Free strategy and solderin
g
details, please download the ON Semiconductor Soldering an
d
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
0.650.42
0.75 2.30
3.46
PACKAGE
8X
0.055 0.059
0 −−−
_
0.063
12
_
0.028 0.030
0.000 −−−
0.009 0.012
0.006 0.008
0.116 0.120
0.078 0.083
0.116 0.120
0.058 0.063
0.026 BSC
0.012 0.016
0.026 0.032
0.012 0.017
0.002 0.005
0.031
0.002
0.016
0.010
0.124
0.088
0.124
0.068
0.020
0.037
0.022
0.008
MIN NOM
INCHES MAX
78
PITCH
3.60
0.57
0.47
OUTLINE
DIMENSION: MILLIMETERS
3.30 BSC
3.30 BSC
0.130 BSC
0.130 BSC
2.37
0.66
4X
E3 0.23 0.30 0.40 0.009 0.012 0.016
E3
4X
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