Composite Transistors
1
Publication date: August 2004 SJJ00303AED
UP04979
Silicon N-channel MOSFET (Tr1)
Silicon P-channel MOSFET (Tr2)
For switching
■Features
•High-speed switching
•Gate protection diode built-in
•Two elements incorporated into one package
(Each transistor is separated)
•Reduction of the mounting area and assembly cost by one half
■Basic Part Number
•2SJ0672 + 2SK3539
■Absolute Maximum Ratings Ta = 25°C
Marking Symbol: 4T
Internal Connection
Unit: mm
(G2)
5
(D1)
6
(S2)
4
1
(S1)
2
(G1)
3
(D2)
Parameter Symbol Rating Unit
Tr1 Drain-source surrender VDSS 50 V
voltage
Gate-source voltage VGSO ±7V
(Drain open)
Drain current ID100 mA
Peak drain current IDP 200 mA
Tr2 Drain-source surrender VDSS −30 V
voltage
Gate-source voltage VGSO ±7V
(Drain open)
Drain current ID−100 mA
Peak drain current IDP −200 mA
Overall Total power dissipation *PT125 mW
Junction temperature Tch 125 °C
Storage temperature Tstg −55 to +125 °C
1: Source (FET1) 4: Source (FET2)
2: Gate (FET1) 5: Gate (FET2)
3: Drain (FET2) 6: Drain (FET1)
JEDEC: SOD-723 SSMini6-F1 Package
(0.30) 0.10
±0.02
654
123 5˚
5˚
0.20
+0.05
–0.02
1.60
±0.05
0.55
±0.05
0.10 max.
0 to 0.02
(0.20)
1.60
±0.05
Display at No.1 lead
1.20
±0.05
(0.20)
1.00
±0.05
(0.50)(0.50)
Note) *: Measuring on substrate at 17 mm × 10 mm × 1 mm
UP04979
2SJJ00303AED
■Electrical Characteristics Ta = 25°C ± 3°C
•Tr1
Parameter Symbol Conditions Min Typ Max Unit
Drain-source surrender voltage VDSS ID = 10 µA, VGS = 050 V
Drain-source cutoff current IDSS VDS = 30 V, VGS = 0 1.0 µA
Gate-source cutoff current IGSS VGS = ±7 V, VDS = 0 ±10 µA
Gate threshold voltage Vth ID = 1.0 µA, VDS = 3.0 V 0.5 1.0 1.5 V
Drain-source ON resistance RDS(on) ID = 10 mA, VGS = 2.5 V 8 15 Ω
ID = 10 mA, VGS = 4.0 V 6 12
Forward transfer admittance YfsID = 10 mA, VDS = 3.0 V 20 60 mS
Turn-on time *ton VDD = 3 V, VGS = 0 V to 3 V, ID = 10 mA 200 ns
Turn-off time *toff VDD = 3 V, VGS = 3 V to 0 V, ID = 10 mA 200 ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Refer to ton, toff test circuit.
•Tr2
Parameter Symbol Conditions Min Typ Max Unit
Drain-source surrender voltage VDSS ID = −10 µA, VGS = 0 −30 V
Drain-source cutoff current IDSS VDS = −20 V, VGS = 0 −1.0 µA
Gate-source cutoff current IGSS VGS = ±7 V, VDS = 0 ±10 µA
Gate threshold voltage Vth ID = −1.0 µA, VDS = −3.0 V − 0.5 −1.0 −1.5 V
Drain-source ON resistance RDS(on) ID = −10 mA, VGS = −2.5 V 25 45 Ω
ID = −10 mA, VGS = −4.0 V 15 30
Forward transfer admittance YfsID = −10 mA, VDS = −3.0 V 20 35 mS
Turn-on time *ton
V
DD
= −3 V, V
GS
= 0 V to −3 V, I
D
= −10 mA
850 ns
Turn-off time *toff
V
DD
= −3 V, V
GS
= −3 V to 0 V, I
D
= −10 mA
850 ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Refer to ton, toff test circuit.
ton, toff test citcuit (Tr1)
ton, toff test citcuit (Tr2)
V
OUT
V
DD
= 3 V
V
GS
= 3.0 V
50 Ω
470 Ω
100 µF
V
IN
90%
10%
10%
90%
V
OUT
t
on
t
off
V
OUT
V
DD
= −3 V
V
GS
= 0 V to −3 V
50 Ω
280 Ω
100 µF
V
GS
10%
90%
10%
90%
V
OUT
t
on
t
off
UP04979
3
SJJ00303AED
Characteristics charts of Tr1
Common characteristics chart
PT Ta
ID VDS ID VGS Yfs ID
Yfs VGS RDS(on) VGS
Ambient temperature Ta (°C)
Total power dissipation PT (mW)
0 80 12040
0
140
120
100
80
60
40
20
0
012210486
70
60
Drain-source voltage VDS (V)
Drain current ID (mA)
50
40
30
20
10
Ta = 25°C
VGS = 2.0 V
1.5 V
1.6 V
1.7 V
1.8 V
1.9 V
0
0345612
300
250
Gate-source voltage V
GS
(V)
Drain current I
D
(mA)
200
150
100
50
V
DS
= 3 V
T
a
= −25°C
85°C
25°C
Forward transfer admittance |Y
fs
| (mS)
Drain current I
D
(mA)
0 50 100 150 200 250
0
40
20
120
100
180
160
140
80
60
V
GS
= 3 V
T
a
= 25°C
Forward transfer admittance |Yfs | (mS)
Gate-source voltage VGS (V)
0123
0
40
20
120
100
180
160
140
80
60
V
DS
= 3 V
0
024681012
40
Gate-source voltage V
GS
(V)
Drain-source ON resistance R
DS(on)
(Ω)
30
20
10
I
D
= 10 mA
T
a
= 85°C
−25°C
25°C
UP04979
4SJJ00303AED
Characteristics charts of Tr2
ID VDS ID VGS Yfs VGS
RDS(on) VGS
0
0−12−2−10−4−8−6
−80
−100
−120
−60
Drain-source voltage VDS (V)
Drain current I
D
(mA)
−40
−20
T
a
= 25°C
V
GS
= −3.50 V
−3.25 V
−3.00 V
−2.75 V
−2.50 V
0
0−2−4−6
−180
Gate-source voltage V
GS
(V)
Drain current I
D
(mA)
−20
−40
−60
−80
−100
−120
−140
−160
V
DS
= −3 V T
a
= −25°C
85°C
25°C
Forward transfer admittance |Y
fs
| (mS)
Gate-source voltage V
GS
(V)
0−2−4−6
0
20
10
60
50
70
40
30
V
DS
= −3 V
T
a
= 25°C
0
0−2−4−6
50
40
Gate-source voltage V
GS
(V)
Drain-source ON resistance R
DS(on)
(Ω)
30
20
10
ID = −10 mA
−25°C
25°C
Ta = 85°C
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of
the products or technical information described in this material and controlled under the "Foreign Exchange
and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteristics and
applied circuits examples of the products. It neither warrants non-infringement of intellectual property right
or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical
information as described in this material.
(4) The products described in this material are intended to be used for standard applications or general elec-
tronic equipment (such as office equipment, communications equipment, measuring instruments and house-
hold appliances).
Consult our sales staff in advance for information on the following applications:
•Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combus-
tion equipment, life support systems and safety devices) in which exceptional quality and reliability are
required, or if the failure or malfunction of the products may directly jeopardize life or harm the human
body.
•Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without notice for
modification and/or improvement. At the final stage of your design, purchasing, or use of the products,
therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifica-
tions satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rat-
ing, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not
be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of
break down and failure mode, possible to occur to semiconductor products. Measures on the systems such
as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent
physical injury, fire, social damages, for example, by using the products.
(7) When using products for which damp-proof packing is required, observe the conditions (including shelf life
and amount of time let standing of unsealed items) agreed upon when specification sheets are individually
exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2003 SEP
