IRG4BC10SD-S
IRG4BC10SD-L
06/12/01
www.irf.com 1
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
E
G
n-channel
C
VCES = 600V
VCE(on) typ. = 1.10V
@VGE = 15V, IC = 2.0A
Standard Speed
CoPack IGBT
• Extremely low voltage drop 1.1Vtyp. @ 2A
• S-Series: Minimizes power dissipation at up to 3
KHz PWM frequency in inverter drives, up to 4
KHz in brushless DC drives.
• Very Tight Vce(on) distribution
• IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use
in bridge configurations
• Industry standard D2Pak & TO-262 packages
Benefits
• Generation 4 IGBT's offer highest efficiencies
available
• IGBT's optimized for specific application conditions
• HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require
less/no snubbing
• Lower losses than MOSFET's conduction and
Diode losses
Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
IC @ TC = 25°C Continuous Collector Current 14
IC @ TC = 100°C Continuous Collector Current 8.0
ICM Pulsed Collector CurrentQ 18 A
ILM Clamped Inductive Load Current R18
IF @ TC = 100°C Diode Continuous Forward Current 4.0
IFM Diode Maximum Forward Current 18
VGE Gate-to-Emitter Voltage ± 20 V
PD @ TC = 25°C Maximum Power Dissipation 38
PD @ TC = 100°C Maximum Power Dissipation 15
TJOperating Junction and -55 to +150
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Parameter Min. Typ. Max. Units
RθJC Junction-to-Case - IGBT ––– ––– 3.3
RθJC Junction-to-Case - Diode ––– ––– 7.0 °C/W
RθCS Case-to-Sink, flat, greased surface ––– 0.50 –––
RθJA Junction-to-Ambient, typical socket mount U––– ––– 80
RθJA Junction-to-Ambient (PCB Mount, steady state)V––– ––– 40
Wt Weight ––– 2.0(0.07) ––– g (oz)
Thermal Resistance
Absolute Maximum Ratings
W
D2Pak
IRG4BC10SD-S TO-262
IRG4BC10SD-L
PD - 94255
IRG4BC10SD-S/L
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Switching Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown VoltageS600 —— VV
GE = 0V, IC = 250µA
∆V(BR)CES/∆TJTemperature Coeff. of Breakdown Voltage —0.64 —V/°CV
GE = 0V, IC = 1.0mA
VCE(on) Collector-to-Emitter Saturation Voltage —1.58 1.8 IC = 8.0A VGE = 15V
—2.05 —VI
C = 14.0A See Fig. 2, 5
—1.68 —IC = 8.0A, TJ = 150°C
VGE(th) Gate Threshold Voltage 3.0 —6.0 VCE = VGE, IC = 250µA
∆VGE(th)/∆TJTemperature Coeff. of Threshold Voltage —-9.5 —mV/°CV
CE = VGE, I C = 250µA
gfe Forward TransconductanceT3.65 5.48 —SV
CE = 100V, IC =8.0A
ICES Zero Gate Voltage Collector Current ——250 µA VGE = 0V, VCE = 600V
——1000 VGE = 0V, VCE = 600V, TJ = 150°C
VFM Diode Forward Voltage Drop —1.5 1.8 V IC =4.0A See Fig. 13
—1.4 1.7 IC =4.0A, TJ = 150°C
IGES Gate-to-Emitter Leakage Current ——±100 nA VGE = ±20V
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Details of note Q through T are on the last page
QgTotal Gate Charge (turn-on) —15 22 IC = 8.0A
Qge Gate - Emitter Charge (turn-on) —2.42 3.6 nC VCC = 400V See Fig. 8
Qgc Gate - Collector Charge (turn-on) —6.53 9.8 VGE = 15V
td(on) Turn-On Delay Time —76 —TJ = 25°C
trRise Time —32 —ns IC = 8.0A, VCC = 480V
td(off) Turn-Off Delay Time —815 1200 VGE = 15V, RG = 100Ω
tfFall Time —720 1080 Energy losses include "tail" and
Eon Turn-On Switching Loss —0.31 —diode reverse recovery.
Eoff Turn-Off Switching Loss —3.28 —mJ See Fig. 9, 10, 18
Ets Total Switching Loss —3.60 10.9
Ets Total Switching Loss —1.46 2.6 mJ IC = 5.0A
td(on) Turn-On Delay Time —70 —TJ = 150°C, See Fig. 10,11, 18
trRise Time —36 —ns IC = 8.0A, VCC = 480V
td(off) Turn-Off Delay Time —890 —VGE = 15V, RG = 100Ω
tfFall Time —890 —Energy losses include "tail" and
Ets Total Switching Loss —3.83 —mJ diode reverse recovery.
LEInternal Emitter Inductance —7.5 —nH Measured 5mm from package
Cies Input Capacitance —280 —VGE = 0V
Coes Output Capacitance —30 —pF VCC = 30V See Fig. 7
Cres Reverse Transfer Capacitance —4.0 —ƒ = 1.0MHz
trr Diode Reverse Recovery Time —28 42 ns TJ = 25°C See Fig.
—38 57 TJ = 125°C 14 IF =4.0A
Irr Diode Peak Reverse Recovery Current —2.9 5.2 A TJ = 25°C See Fig.
—3.7 6.7 TJ = 125°C 15 VR = 200V
Qrr Diode Reverse Recovery Charge —40 60 nC TJ = 25°C See Fig.
—70 105 TJ = 125°C 16 di/dt = 200A/µs
di(rec)M/dt Diode Peak Rate of Fall of Recovery —280 —A/µs TJ = 25°C See Fig.
During tb—235 —TJ = 125°C 17
Parameter Min. Typ. Max. Units Conditions
IRG4BC10SD-S/L
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Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics
1
10
100
0.5 1.0 1.5 2.0 2.5 3.0
V , Collector-to-Emitter Voltage (V)
I , Collector Current (A)
CE
C
V = 15V
80
µ
s PULSE WIDTH
GE
T = 25 C
J°
T = 150 C
J°
1
10
100
6 8 10 12
V , Gate-to-Emitter Voltage (V)
I , Collector-to-Emitter Current (A)
GE
C
V = 50V
5
µ
s PULSE WIDTH
CC
T = 25 C
J°
T = 150 C
J°
5µs PULSE WIDTH
0.1 110 100
f , Frequency ( kHz )
0.0
2.0
4.0
6.0
8.0
10.0
Load Current ( A )
Duty cycle : 50%
Tj = 125°C
Tsink = 90°C Ta = 55°C
Gate drive as specified
Turn-on losses include effects of
reverse recovery
Power Dissipation = 9.2W for Heatsink Mount
Power Dissipation = 1.8W for typical
PCB socket Mount
60 % of ra ted
voltage
Ideal di odes
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Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
Fig. 4 - Maximum Collector Current vs. Case
Temperature
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
1 2
JDM thJC C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
-60 -40 -20 020 40 60 80 100 120 140 160
1.00
1.50
2.00
2.50
3.00
T , Junction Temperature ( C)
V , Collector-to-Emitter Voltage(V)
J°
CE
V = 15V
80 us PULSE WIDTH
GE
I = A16
C
I = A8
C
I = A4
C
25 50 75 100 125 150
0
4
8
12
16
T , Case Temperature ( C)
Maximum DC Collector Current(A)
C°
IRG4BC10SD-S/L
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020 40 60 80 100
3.30
3.35
3.40
3.45
3.50
3.55
3.60
R , Gate Resistance (Ohm)
Total Switching Losses (mJ)
G
V = 480V
V = 15V
T = 25 C
I = 8A
CC
GE
J
C
°
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
Fig. 9 - Typical Switching Losses vs. Gate
Resistance Fig. 10 - Typical Switching Losses vs.
Junction Temperature
RG , Gate Resistance (Ω)
0 5 10 15 20
0
5
10
15
20
Q , Total Gate Charge (nC)
V , Gate-to-Emitter Voltage (V)
G
GE
V= 400V
I = 8A
CC
C
1 10 100
0
100
200
300
400
500
V , Collector-to-Emitter Volta
g
e (V)
C, Capacitance (pF)
CE
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GE
ies
g
e
g
c , ce
res
g
c
oes ce
g
c
Cies
Coes
Cres
-60 -40 -20 020 40 60 80 100 120 140 160
0.1
1
10
100
T , Junction Temperature ( C )
Total Switching Losses (mJ)
J°
R = Ohm
V = 15V
V = 480V
G
GE
CC
I = A
16
C
I = A
8
C
I = A
4
C
100Ω
IRG4BC10SD-S/L
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1
10
100
1 10 100 1000
V = 20V
T = 125 C
GE
Jo
SAFE OPERATING AREA
V , Collector-to-Emitter Voltage (V)
I , Collector Current (A)
CE
C
Fig. 11 - Typical Switching Losses vs.
Collector Current Fig. 12 - Turn-Off SOA
04812 16 20
0
3
6
9
12
15
I , Collector Current (A)
Total Switching Losses (mJ)
C
R = 100
T = 150 C
V = 480V
V = 15V
G
J
CC
GE
°
100 Ω
0.1
1
10
100
0.0 1.0 2.0 3.0 4.0 5.0 6.0
FM
Forward Volta
g
e D rop - V
(
V
)
T = 150°C
T = 125°C
T = 25°C
J
J
J
Forward Voltage Drop - VFM ( V )
Instantaneous Forward Current ( A )
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
IRG4BC10SD-S/L
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Fig. 16 - Typical Stored Charge vs. dif/dt Fig. 17 - Typical di(rec)M/dt vs. dif/dt,
Fig. 14 - Typical Reverse Recovery vs. dif/dt Fig. 15 - Typical Recovery Current vs. dif/dt
di (rec) M/dt- (A /µs)
Qrr- (nC)
Irr- ( A)
trr- (nC)
20
25
30
35
40
45
50
100 1000
f
d i /d t -
(
A/
µ
s
)
I = 8.0A
I = 4.0A
F
F
V = 200V
T = 125°C
T = 2 5 °C
R
J
J
0
2
4
6
8
10
12
14
100 1000
f
I = 8.0A
I = 4.0A
V = 200V
T = 125°C
T = 25°C
R
J
J
d i /d t -
(
A/
µ
s
)
F
F
0
40
80
120
160
200
100 1000
f
d i /d t -
(
A/
µ
s
)
I = 8.0A
I = 4.0A
V = 200V
T = 125°C
T = 25°C
R
J
J
F
F
100
1000
100 1000
f
d i /d t -
(
A/
µ
s
)
I = 8.0A
I = 4.0A
V = 200V
T = 125°C
T = 25°C
R
J
J
F
F
IRG4BC10SD-S/L
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Same typ e
device as
D.U.T.
D.U.T.
430µF
80%
of Vce
Fig. 18a - Test Circuit for Measurement of
ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
∫
Vce ie dt
t2
t1
5% V ce
Ic
Ipk
Vcc 10% Ic
Vce
t1 t2
DUT VOLTAGE
AN D CURRE NT
GATE VO LTAGE D.U.T.
+Vg
10% +Vg
90% Ic
tr
td(on)
DIODE REVE RSE
RECO VERY ENERG Y
tx
E on =
∫
Erec = t4
t3
Vd id dt
t4
t3
DIO DE RECOVERY
WAVEFORMS
Ic
Vpk
10% V cc
Irr
10% Irr Vcc
trr
∫
Qrr = trr
tx
id d t
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining Eon, td(on), tr
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr
Vd Ic dt
Vce Ic dt
Ic dt
t=5µs
d(on)
t
t
f
t
r
90%
t
d(off)
10%
90%
10%
5%
C
I
C
E
on
E
off
ts on off
E = (E +E )
V
V
ge
IRG4BC10SD-S/L
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V
g
GATE SIG NAL
DEVICE UNDER TES
T
CURRENT D.U.T.
VOLTAGE IN D.U.T.
CURRENT IN D1
t0 t1 t2
D.U.T.
V *
c
50V
L
1000V
6000µF
100V
Figure 19. Clamped Inductive Load Test Circuit Figure 20. Pulsed Collector Current
Test Circuit
RL=480V
4 X IC @25°C
0 - 480V
Figure 18e. Macro Waveforms for Figure 18a's Test Circuit
IRG4BC10SD-S/L
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D2Pak Package Outline
D2Pak Part Marking Information
10.16 (.400)
REF.
6.47 (.2 55 )
6.18 (.2 43 )
2.61 (.1 03 )
2.32 (.0 91 )
8.89 (.350)
REF.
- B -
1.32 (.052)
1.22 (.048)
2.79 (.110)
2.29 (.090)
1.39 (.055)
1.14 (.045)
5.28 (.2 08 )
4.78 (.1 88 )
4.69 (.185)
4.20 (.165)
10.54 (.415)
10.29 (.405)
- A -
2
1 3 15.49 (.610)
14.73 (.580)
3X 0.93 (.037)
0.69 (.027)
5 .08 (.20 0)
3X 1.40 (.0 55)
1.14 (.0 45)
1.78 (.070)
1.27 (.050)
1.40 (.055)
MAX .
NOTES:
1 DIMENSIONS A FTER SO LDE R DIP.
2 DIMENSIONING & TOLERANCING PER ANSI Y14.5M , 1982.
3 CONTROLLING DIMENSION : INCH.
4 HEATSINK & LEAD DIME NSIONS DO NOT INCLUDE BURRS.
0.55 (.022)
0.46 (.018)
0 .2 5 ( .0 1 0) M B A M MINIMUM RECOM MENDE D FOOTPRINT
11.43 (.450)
8 .89 (.35 0)
17 .78 (.70 0)
3.81 (.1 5 0)
2.08 (.082)
2X
LEAD AS SIGN MEN TS
1 - GAT E
2 - DRAIN
3 - SOURCE
2.54 (.100)
2X
PART NUMBER
INTERNATIONAL
RE CTIFIE R
LOG O DATE CODE
(YYW W )
YY = YEAR
WW = WEEK
A S SEMBLY
LOT COD E
F530S
9B 1M
9246
A
IRG4BC10SD-S/L
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TO-262 Par t Mar king Infor mation
TO-262 Package Outline
IRG4BC10SD-S/L
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Notes:
QRepetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20)
RVCC=80%(VCES), VGE=20V, L=10µH, RG = 100W (figure 19)
SPulse width ≤ 80µs; duty factor ≤ 0.1%.
TPulse width 5.0µs, single shot.
UThis only applies to TO-262 package.
V This applies to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.06/01
D2Pak Tape & Reel Information
3
4
4
TRR
FEED DIRECTION
1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
TRL
FEED DIRECTION
10.90 (.429)
10.70 (.421) 16.10 (.634)
15.90 (.626)
1.75 (.0 69 )
1.25 (.0 49 )
11.60 (.457)
11.40 (.449) 15.42 (.609)
15.22 (.601)
4.72 (.136)
4.52 (.178)
24.30 (.957)
23.90 (.941)
0.368 (.01 45)
0.342 (.01 35)
1.60 (.063)
1.50 (.059)
13.50 (.532)
12.80 (.504)
330.00
(14.173)
MAX.
27.40 (1.079)
23.90 (.941)
60.00 (2.362)
MIN.
30.40 (1.197)
MAX .
26.40 (1.0 39)
24.40 (.96 1)
N OTES :
1. COM FO RM S TO E IA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. IN CLU D ES F LANG E DISTORT IO N @ O UT ER EDGE.
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/