© 2004 IXYS All rights reserved
VCES = 1700 V
IC25 = 24 A
VCE(sat) = 6.0 V
tfi(typ) = 45 ns
IXGH 24N170A
IXGT 24N170A
C (TAB)
G = Gate, C = Collector,
E = Emitter, TAB = Collector
GCE
TO-247 AD (IXGH)
Features
zInternational standard packages
JEDEC TO-268 and
JEDEC TO-247 AD
zHigh current handling capability
zMOS Gate turn-on
- drive simplicity
zRugged NPT structure
zMolding epoxies meet UL 94 V-0
flammability classification
Applications
zCapacitor discharge & pulser circuits
zAC motor speed control
zDC servo and robot drives
zDC choppers
zUninterruptible power supplies (UPS)
zSwitched-mode and resonant-mode
power supplies
Advantages
zHigh power density
zSuitable for surface mounting
zEasy to mount with 1 screw,
(isolated mounting screw hole)
DS98995B(11/04)
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
BVCES IC= 250 µA, VGE = 0 V 1700 V
VGE(th) IC= 250 µA, VCE = VGE 3.0 5.0 V
ICES VCE = 0.8 • VCES TJ = 25°C50µA
VGE = 0 V Note 1 TJ = 125°C 1000 µA
IGES VCE = 0 V, VGE = ±20 V ±100 nA
VCE(sat) IC= IC90, VGE = 15 V TJ = 25°C 4.5 6.0 V
TJ = 125°C 4.8 V
Symbol Test Conditions Maximum Ratings
VCES TJ= 25°C to 150°C 1700 V
VCGR TJ= 25°C to 150°C; RGE = 1 MΩ1700 V
VGES Continuous ±20 V
VGEM Transient ±30 V
IC25 TC= 25°C24A
IC90 TC= 90°C16A
ICM TC= 25°C, 1 ms 75 A
SSOA VGE = 15 V, TVJ = 125°C, RG = 5Ω ICM = 50 A
(RBSOA) Clamped inductive load @ 0.8 VCES
tSC TJ = 125°C, VCE = 1200 V; VGE = 15 V, RG = 22Ω 10 µs
PCTC= 25°C 250 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
MdMounting torque (M3) (TO-247) 1.13/10Nm/lb.in.
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
Weight TO-247 6 g
TO-268 4 g
TO-268 (IXGT)
G
E
High Voltage
IGBT
C (TAB)
Preliminary Data Sheet
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
e
∅ P
TO-247 AD Outline
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs IC= IC25; VCE = 10 V 10 16 S
Note 2
Cies 2400 pF
Coes VCE = 25 V, VGE = 0 V, f = 1 MHz 120 pF
Cres 30 pF
Qg105 nC
Qge IC = IC90, VGE = 15 V, VCE = 0.5 VCES 17 nC
Qgc 30 nC
td(on) 38 ns
tri 57 ns
td(off) 200 350 ns
tfi 45 100 ns
Eoff 1.1 2.2 mJ
td(on) 38 ns
tri 60 ns
Eon 2.5 mJ
td(off) 220 ns
tfi 55 ns
Eoff 1.7 mJ
RthJC 0.5 K/W
RthCK (TO-247) 0.25 K/W
Inductive load, TJ = 125°°
°°
°C
IC = IC25, VGE = 15 V
RG = 5 Ω, VCE = 0.5 VCES
Note 3
Inductive load, TJ = 25°°
°°
°C
IC = IC25, VGE = 15 V
RG = 5 Ω, VCE = 0.5 VCES
Note 3
IXGH 24N170A
IXGT 24N170A
TO-268 Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.9 5.1 .193 .201
A12.7 2.9 .106 .114
A2.02 .25 .001 .010
b 1.15 1.45 .045 .057
b21.9 2.1 .75 .83
C .4 .65 .016 .026
D 13.80 14.00 .543 .551
E 15.85 16.05 .624 .632
E113.3 13.6 .524 .535
e 5.45 BSC .215 BSC
H 18.70 19.10 .736 .752
L 2.40 2.70 .094 .106
L1 1.20 1.40 .047 .055
L2 1.00 1.15 .039 .045
L3 0.25 BSC .010 BSC
L4 3.80 4.10 .150 .161
Notes: 1. Device must be heatsunk for high temperature leakage current
measurements to avoid thermal runaway.
2. Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
3. Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or
increased RG.
