2018 Microchip Technology Inc. DS20005630A-page 1
HV809
Features
Up to 200V DC Input Voltage
400V Peak-to-Peak Output Voltage
Up to 350 nF Output Load
(100 in2 for 3.5 nF/in2 Lamp)
Adjustable Output Lamp Frequency
Adjustable On/Off Pulsing Frequency
Applications
Electronic Organizers
Handheld Portable Computers
Display Signs
Portable Instrumentation Equipment
General Description
The HV809 is an offline high-voltage EL lamp driver
integrated circuit designed for driving EL lamps of up to
350 nF at 400 Hz. The input supply voltage can be a
rectified nominal 120V AC source or any other DC
source up to 200V. The HV809 supplies the EL lamp
with an AC square wave with a peak-to-peak voltage of
twice the input DC voltage.
The HV809 has two internal oscillators, a low-voltage
output linear regulator, and a high-voltage output
H-bridge. The high-voltage output H-bridge frequency
is set by an external resistor connected between the
REL-Osc and GND pins. The EL lamp is connected
between the VA and VB pins. For the HV809 in the 8-pin
package, an external RC network can be connected
between the oscillator’s Osc1 and Osc2 pins to pulse
the EL lamp on and off.
For detailed circuit and application information, please
refer to Application Note, AN-H36.
Package Type
8-lead SOIC (Narrow Body)
(Top view)
8-lead SOIC (with Heat Slug)
(Top view)
1
2
3
4
8
7
6
5
HVIN
VDD
Osc2
Osc1
VA
VB
GND
REL-Osc
1
2
3
4
8
7
6
5
HVIN
VDD
Osc2
Osc1
VA
VB
GND
REL-Osc
Heat Slug
See Table 2-1 for pin information.
s
Offline High-Voltage EL Lamp Driver
GND
HVIN
VDD
Osc2
Osc1
REL-Osc
V
A
VB
Q
Q
Q
Q
Logic
and
Osc
Linear
Regulator
HV809
DS20005630A-page 2 2018 Microchip Technology Inc.
Functional Block Diagram
2018 Microchip Technology Inc. DS20005630A-page 3
HV809
1.0 ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings†
High-Voltage Input, HVIN ..................................................................................................................................... +210V
Internal Supply Voltage, VDD .................................................................................................................................. +15V
Maximum Junction Temperature, TJMAX ............................................................................................................. +125°C
Storage Temperature, TS..................................................................................................................... –55°C to +150°C
Power Dissipation:
8-lead SOIC ........................................................................................................................................... 500 mW
8-lead SOIC (with Heat Slug) ................................................................................................................1.5 Watts
Notice: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only, and functional operation of the device at those or any other conditions above those
indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for
extended periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS
Parameter Sym. Min. Typ. Max. Unit Conditions
High-Voltage Input HVIN 50 200 V
Load Capacitance CL
350 nF REL = 1 M, HVIN = 170V
150 nF REL = 390 k, HVIN = 170V
Operating Temperature TA–25 +85 °C
DC ELECTRICAL CHARACTERISTICS
Electrical Specifications: Over recommended operating conditions unless otherwise indicated; TA = 25°C
Parameter Sym. Min. Typ. Max. Unit Conditions
High-Voltage Supply Current IIN
70 mA HVIN = 170V, REL = 1 M, CL = 350 nF
9 mA HVIN = 170V, REL = 1 M, CL = 50 nF
Quiescent Supply Current IINQ
400 μAHVIN = 170V, REL = 1 M,
Osc1 = GND, No load
100 μAHVIN = 170V, REL = 1 M,
Osc1 = VDD, No load
Osc2 Sink Current ISINK 300 μA VOsc2 = 1V
Osc2 Source Current ISOURCE 100 μA VOsc2 = VDD–1V
Osc1 Logic Input Leakage
Current IOsc1 ±10 μA VOsc1 = GND and VDD
Osc1 Hysteresis Voltage VOsc1(HYST) 2.5 V
Minimum Differential Output
Voltage across Lamp VA–B 400 VHVIN = 200V
Internal Supply Voltage VDD 810 12 VNo load on VDD
AC ELECTRICAL CHARACTERISTICS
Electrical Specifications: Over recommended operating conditions unless otherwise indicated; TA = 25°C
Parameter Sym. Min. Typ. Max. Unit Conditions
VA-B Output Drive Frequency fEL
320 400 480 Hz REL = 1 M, Osc1 = GND, CL = 350 nF
0.8 11.2 kHz REL = 390 k, Osc1 = GND, CL = 150 nF
Output Rise Time tr180 250 μs CL = 150 nF, HVIN = 170V
Output Fall Time tf50 100 μs CL = 150 nF, HVIN = 170V
TEMPERATURE SPECIFICATIONS
Parameter Sym. Min. Typ. Max. Unit Conditions
TEMPERATURE RANGE
Operating Ambient Temperature TA–25 +85 °C
Maximum Junction Temperature TJMAX +125 °C
Storage Temperature TS–55 +150 °C
PACKAGE THERMAL RESISTANCE
8-lead SOIC JA 101 °C/W
8-lead SOIC (with Heat Slug) JA 84 °C/W
HV809
DS20005630A-page 4 2018 Microchip Technology Inc.
2018 Microchip Technology Inc. DS20005630A-page 5
HV809
2.0 PIN DESCRIPTION
The details on the pins of HV809 8-lead SOIC (narrow
body) and 8-lead SOIC (narrow body with heat slug)
are listed on Tabl e 2-1. See Package Types for the
location of pins.
TABLE 2-1: PIN FUNCTION TABLE
Pin Number Pin Name Description
1HVIN High-voltage input supply pin
2VDD Internal supply voltage
3Osc2 The RC network can be connected between the oscillator’s Osc1 and Osc2 pins to
pulse the EL lamp on and off.
4Osc1
The Output H-bridge can be enabled and disabled by connecting the Osc1 pin to the
GND and VDD pins. The output can be left enabled by connecting the Osc1 pin to
GND.
5REL-Osc EL lamp frequency is controlled via an external REL resistor connected between the
REL-Osc and GND pins of the device.
6 GND Ground pin
7VB VB side of the EL lamp driver H-bridge. Connection for one of the EL lamp terminals.
8VA VA side of the EL lamp driver H-bridge. Connection for one of the EL lamp terminals.
Note 1: Heat slug is at ground potential.
HV809
DS20005630A-page 6 2018 Microchip Technology Inc.
3.0 FUNCTIONAL DESCRIPTION
50 to 200VDC
3.0 to 12VDC DC-DC
Converter
VBATT
R
C
HVIN
VDD
Osc2
Osc1
VA
VB
GND
REL-Osc
1
2
3
4
8
7
6
5
REL
EL Lamp
HV809
CIN
CDD
FIGURE 3-1: Pulsing EL Lamp.
50 to 200VDC
3.0 to 12VDC DC-DC
Converter
VBATT
R
C
HVIN
VDD
Osc2
Osc1
VA
VB
GND
REL-Osc
1
2
3
4
8
7
6
5
REL
EL Lamp
HV809
CIN
CDD
Push
Button
FIGURE 3-2: Push-button, Delayed Turn-off.
2018 Microchip Technology Inc. DS20005630A-page 7
HV809
VA
VB
VA - VB
HVIN = 170V, REL = 1 M and CL = 350 nF
FIGURE 3-3: Typical Waveform on VA and VB and Differential Waveform VA–VB.
TABLE 3-1: FUNCTION TABLE
Inputs Outputs
Osc1 VAVB
GND Enabled Enabled
VDD Disabled Disabled
HV809
DS20005630A-page 8 2018 Microchip Technology Inc.
4.0 PACKAGING INFORMATION
4.1 Package Marking Information
Legend: XX...X Product Code or Customer-specific information
Y Year code (last digit of calendar year)
YY Year code (last 2 digits of calendar year)
WW Week code (week of January 1 is week ‘01’)
NNN Alphanumeric traceability code
Pb-free JEDEC® designator for Matte Tin (Sn)
*This package is Pb-free. The Pb-free JEDEC designator ( )
can be found on the outer packaging for this package.
Note: In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for product code or customer-specific information. Package may or
not include the corporate logo.
3
e
3
e
8-lead SOIC Example
NNN
XXXXXXX
YYWW
e3
772
HV809LG
1814
e3
8-lead SOIC Example
NNN
XXXXXXX
YYWW
e3
117
HV809SG
1818
e3
Note: For the most current package drawings, see the Microchip Packaging Specification at www.microchip.com/packaging.
2018 Microchip Technology Inc. DS20005630A-page 9
HV809
Note: For the most current package drawings, see the Microchip Packaging Specification at www.microchip.com/packaging.Note: For the most current package drawings, see the Microchip Packaging Specification at www.microchip.com/packaging.
HV809
DS20005630A-page 10 2018 Microchip Technology Inc.
2018 Microchip Technology Inc. DS20005630A-page 11
HV809
APPENDIX A: REVISION HISTORY
Revision A (August 2018)
Converted Supertex Doc# DSFP-HV908 to Micro-
chip DS20005630A
Removed “Processed with HVCMOS® Technol-
ogy” from the Features section
Removed the “Output VDD Current” parameter
from the DC Electrical Characteristics table
Removed the 7-lead TO-220 package option
Changed the quantity of the LG and SG packages
from 2500/Reel to 3300/Reel
Made minor text changes throughout the docu-
ment
HV809
DS20005630A-page 12 2018 Microchip Technology Inc.
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, contact your local Microchip representative or sales office.
Examples:
a) HV809LG-G: Offline High-Voltage EL Lamp Driver,
8-lead SOICPackage, 3300/Reel
b) HV809SG-G: Offline High-Voltage EL Lamp Driver,
8-lead SOIC Package (with Heat Slug),
3300/Reel
PART NO.
Device
Device: HV809 = Offline High-Voltage EL Lamp Driver
Packages: LG = 8-lead SOIC
SG = 8-lead SOIC (with Heat Slug)
Environmental: G = Lead (Pb)-free/RoHS-compliant Package
Media Type: (blank) = 3300/Reel for an LG Package
(blank) = 3300/Reel for an SG Package
XX
Package
-
X - X
Environmental
Media Type
Options
2018 Microchip Technology Inc. DS20005630A-page 13
Information contained in this publication regarding device
applications and the like is provided only for your convenience
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR
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IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORMATION,
INCLUDING BUT NOT LIMITED TO ITS CONDITION,
QUALITY, PERFORMANCE, MERCHANTABILITY OR
FITNESS FOR PURPOSE. Microchip disclaims all liability
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conveyed, implicitly or otherwise, under any Microchip
intellectual property rights unless otherwise stated.
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© 2018, Microchip Technology Incorporated, All Rights Reserved.
ISBN: 978-1-5224-3381-1
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DS20005630A-page 14 2018 Microchip Technology Inc.
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