SFH 4203
Leistungsstarke IR-Lumineszenzdiode
High Power Infrared Emitter
Lead (Pb) Free Product - RoHS Compliant
Nicht für Neuentwicklungen / Not for new designs
2008-01-14 1
Wesentliche Merkmale
• Leistungsstarke GaAs-LED (35 mW)
• Hoher Wirkunsgrad bei kleinen Strömen
• Homogene Abstrahlung
• Typische Peakwellenlänge 950 nm
Anwendungen
• Industrieelektronik
• „Messen/Steuern/Regeln“
• Automobiltechnik
• Sensorik
• Alarm- und Sicherungssysteme
• IR-Freiraumübertragung
Typ
Type
Bestellnummer
Ordering Code
Strahlstärkegruppierung1) (IF = 100 mA, tp = 20 ms)
Radiant Intensity Grouping1)
Ie (mW/sr)
SFH 4203 Q65110A2499 8 (> 4)
1) gemessen bei einem Raumwinkel Ω = 0.01 sr / measured at a solid angle of Ω = 0.01 sr
Features
• High Power GaAs-LED (35 mW)
• High Efficiency at low currents
• Homogeneous Radiation Pattern
• Typical peak wavelength 950 nm
Applications
• Industrial electronics
• For drive and control circuits
• Automotive technology
• Sensor technology
• Alarm and safety equipment
• IR free air transmission
2008-01-14 2
SFH 4203
Grenzwerte (TA = 25 °C)
Maximum Ratings
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
Betriebs- und Lagertemperatur
Operating and storage temperature range
Top; Tstg – 40 … + 100 °C
Sperrspannung
Reverse voltage
VR3 V
Durchlassstrom
Forward current
IF (DC) 100 mA
Stoßstrom, tp = 10 µs, D = 0
Surge current
IFSM 1 A
Verlustleistung
Power dissipation
Ptot 180 mW
Wärmewiderstand Sperrschicht - Umgebung bei
Montage auf FR4 Platine, Padgröße je 16 mm2
Thermal resistance junction - ambient mounted
on PC-board (FR4), padsize 16 mm2 each
Wärmewiderstand Sperrschicht - Lötstelle bei
Montage auf Metall-Block
Thermal resistance junction - soldering point,
mounted on metal block
RthJA
RthJS
450
200
K/W
K/W
Kennwerte (TA = 25 °C)
Characteristics
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
Wellenlänge der Strahlung
Wavelength at peak emission
IF = 100 mA, tp = 20 ms
λpeak 950 nm
Spektrale Bandbreite bei 50% von Imax
Spectral bandwidth at 50% of Imax
IF = 100 mA, tp = 20 ms
∆λ 40 nm
Abstrahlwinkel
Half angle
ϕ± 65 Grad
deg.
Aktive Chipfläche
Active chip area
A0.09 mm2
Abmessungen der aktiven Chipfläche
Dimensions of the active chip area
L × B
L × W
0.3 × 0.3 mm
SFH 4203
2008-01-14 3
Schaltzeiten, Ie von 10% auf 90% und von 90%
auf 10%, bei IF = 100 mA, tp = 20 ms, RL = 50 Ω
Switching times, Ιe from 10% to 90% and from
90% to10%, IF = 100 mA, tp = 20 ms, RL = 50 Ω
tr, tf10 ns
Durchlassspannung
Forward voltage
IF = 100 mA, tp = 20 ms
IF = 1 A, tp = 100 µs
VF
VF
1.5 (≤ 1.8)
3.2 (≤ 4.3)
V
V
Sperrstrom
Reverse current
VR = 3 V
IR0.01 (≤ 10) µA
Gesamtstrahlungsfluss
Total radiant flux
IF = 100 mA, tp = 20 ms
Φe35 mW
Temperaturkoeffizient von Ie bzw. Φe,
IF = 100 mA
Temperature coefficient of Ie or Φe,
IF = 100 mA
TCI– 0.44 %/K
Temperaturkoeffizient von VF, IF = 100 mA
Temperature coefficient of VF, IF = 100 mA
TCV– 1.5 mV/K
Temperaturkoeffizient von λ, IF = 100 mA
Temperature coefficient of λ, IF = 100 mA
TCλ+ 0.2 nm/K
Strahlstärke Ie in Achsrichtung
gemessen bei einem Raumwinkel Ω = 0.01 sr
Radiant Intensity Ie in Axial Direction
at a solid angle of Ω = 0.01 sr
Bezeichnung
Parameter
Symbol Werte
Values
Einheit
Unit
Strahlstärke
Radiant intensity
IF = 100 mA, tp = 20 ms
Ie min.
Ie typ.
4
8
mW/sr
mW/sr
Strahlstärke
Radiant intensity
IF = 1 A, tp = 100 µs
Ie typ. 48 mW/sr
Kennwerte (TA = 25 °C)
Characteristics (cont’d)
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
SFH 4203
2008-01-14 4
Relative Spectral Emission
Irel = f (λ)
Max. Permissible Forward Current
IF = f (TA), RthJA1)
Radiation Characteristics Irel = f (ϕ)
OHF00777
nm800
Ι
erel
λ
0
850 900 950 1000 1100
20
40
60
80
100
OHF00359
0
F
Ι
0
20
40
60
80
100
120
20 40 60 80 100 120
mA
˚C
TA
RthJA = 375 K/W
0
0.2
0.4
1.0
0.8
0.6
ϕ
1.0 0.8 0.6 0.4
0˚10˚20˚40˚ 30˚ OHL00869
50˚
60˚
70˚
80˚
90˚
100˚
0˚ 20˚ 40˚ 60˚ 80˚ 100˚ 120˚
Radiant Intensity ,
single pulse, tp = 20 µs
Permissible Pulse Handling
Capability
IF = f (tp), TA= 25 °C,
Duty cycle D = parameter
Ie
Ie 100 mA = f (IF)
e
e (100 mA)
mA
OHF00809
F
Ι
Ι
Ι
10 40
10 10 110 23
10
10 -3
10 -2
10
10 -1
0
10 2
0
-5
F
I
A
t
P
=
DT
t
p
s
OHL02963
T
t
P
I
F
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
1010
1
0.5
0.01
0.1
0.2
0.02
0.05
0.005
D
=
0.2
0.4
0.6
0.8
1.0
1.2
Forward Current IF = f (VF),
single pulse, tp = 20 µs
Permissible Pulse Handling
Capability
IF = f (tp), TA= 85 °C,
Duty cycle D = parameter
1)
1) Thermal resistance junction -
ambient mounted on PC-board
(FR4), pad size 16 mm2 (each).
OHF00784
10
-3
V
mA
0
Ι
F
V
F
0.5 1 1.5 2 2.5 3 3.5 4.5
10
-2
10
-1
10
0
10
1
10
2
10
3
10
4
0
-5
F
I
A
t
P
=
DT
t
p
s
OHL02964
T
t
P
I
F
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
1010
1
0.5
0.01
0.1
0.2
0.02
0.05
0.005
D
=
0.2
0.4
0.6
0.8
1.0
1.2
SFH 4203
2008-01-14 5
Maßzeichnung
Package Outlines
Maße in mm (inch) / Dimensions in mm (inch).
Empfohlenes Lötpaddesign Reflow Löten
Recommended Solder Pad Reflow Soldering
Maße in mm (inch) / Dimensions in mm (inch).
GPLY6070
0.8 (0.031)
1.0 (0.039)
0.05 (0.002)
0.15 (0.006)
1.4 (0.055)
1.2 (0.047)
2.1 (0.083)
2.1 (0.083)
2.3 (0.091)
1.3 (0.051)
Anode marking
0.5 (0.020)
0.3 (0.012)
Anode
marking
Light emitting area
typ. 1.5 (0.059) x 1.0 (0.039)
1.5 (0.059)
1.2 (0.047)
0.8 (0.031)
+0.05 (0.002)
1.0 (0.039)
1.9 (0.075)
1.5 (0.059)
OHLPY978
Paddesign
for improved
heat dissipation
Cu-area > 16 mm
Cu-Fläche > 16 mm
Wärmeableitung
Padgeometrie
für verbesserte
Lötstopplack
Solder resist
0.8 (0.031)
2.8 (0.110)
1 (0.039)
2
2
2.8 (0.110)
0.8 (0.031)
1 (0.039)
2008-01-14 6
SFH 4203
Lötbedingungen Vorbehandlung nach JEDEC Level 2
Soldering Conditions Preconditioning acc. to JEDEC Level 2
Reflow Lötprofil für bleifreies Löten (nach J-STD-020C)
Reflow Soldering Profile for lead free soldering (acc. to J-STD-020C)
Wellenlöten (TTW) (nach CECC 00802)
TTW Soldering (acc. to CECC 00802)
OHLA0687
0
0
T
t
˚C
s
120 s max
50
100
150
200
250
300
Ramp Up
100 s max
50 100 150 200 250 300
Ramp Down
6 K/s (max)
3 K/s (max)
25 ˚C
30 s max
260 ˚C +0 ˚C
-5 ˚C
245 ˚C ±5 ˚C
240 ˚C
255 ˚C
217 ˚C
Maximum Solder Profile
Recommended Solder Profile
235 ˚C -0 ˚C
+5 ˚C
Minimum Solder Profile
10 s min
OHLY0598
0
0
50 100 150 200 250
50
100
150
200
250
300
T
t
C
s
235 C
10 s
C... 260
1. Welle
1. wave
2. Welle
2. wave
5 K/s 2 K/s
ca 200 K/s
CC... 130100
2 K/s Zwangskühlung
forced cooling
Normalkurve
standard curve
Grenzkurven
limit curves
SFH 4203
2008-01-14 7
Published by
OSRAM Opto Semiconductors GmbH
Wernerwerkstrasse 2, D-93049 Regensburg
www.osram-os.com
© All Rights Reserved.
The information describes the type of component and shall not be considered as assured characteristics.
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances. For information on the types in question please contact our Sales Organization.
Packing
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By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing
material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs
incurred.
Components used in life-support devices or systems must be expressly authorized for such purpose! Critical
components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS.
1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected
to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.
2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain
and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered.
