AUIRFP4110
HEXFET® Power MOSFET
D
S
G
TO-247AC
G D S
Gate Drain Source
Features
Advanced Process Technology
Ultra Low On-Resistance
Enhanced dV/dT and dI/dT capability
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFETs utilizes the latest processing techniques to
achieve low on-resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature, fast
switching speed and improved repetitive avalanche rating. These
features combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a wide
variety of other applications.
Ordering Information
Base part number Package Type Standard Pack
Form Quantity
AUIRFP4110 TO-247AC Tube 25 AUIRFP4110
Complete Part Number
VDSS 100V
RDS(on) typ. 3.7m
max 4.5m
ID (Silicon Limited) 180A
ID (Package Limited) 120A
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 180
A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 130
IDM Pulsed Drain Current 670
PD @TC = 25°C Maximum Power Dissipation 370 W
Linear Derating Factor 2.5 W/°C
VGS Gate-to-Source Voltage ± 20 V
EAS (Thermally limited) Single Pulse Avalanche Energy 190mJ
TJ
TSTG
Operating Junction and
Storage Temperature Range -55 to + 175 °C
Soldering Temperature, for 10 seconds (1.6mm from case) 300
Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter Typ. Max. Units
RJC Junction-to-Case ––– 0.402
°C/W
RCS Case-to-Sink, Flat Greased Surface 0.24 –––
RJA Junction-to-Ambient ––– 40
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) 120
IAR Avalanche Current 108A
EAR Repetitive Avalanche Energy 37 mJ
dv/dt Peak Diode Recovery 5.3 V/ns
S
G
D
AUTOMOTIVE GRADE
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air
conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback January 29, 2014
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
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AUIRFP4110
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 100 ––– ––– V VGS = 0V, ID = 250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.108 ––– V/°C Reference to 25°C, ID = 5mA
RDS(on) Static Drain-to-Source On-Resistance ––– 3.7 4.5 m VGS = 10V, ID = 75A
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
IDSS Drain-to-Source Leakage Current ––– ––– 20 µA VDS =100 V, VGS = 0V
––– ––– 250 VDS =100V,VGS = 0V,TJ =125°C
IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
RG Gate Resistance ––– 1.3 –––
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg Total Gate Charge ––– 150 210
nC
ID = 75A
Qgs Gate-to-Source Charge ––– 35 ––– VDS = 50V
Qgd Gate-to-Drain Charge ––– 43 ––– VGS = 10V
td(on) Turn-On Delay Time ––– 25 –––
ns
VDD = 65V
tr Rise Time ––– 67 ––– ID = 75A
td(off) Turn-Off Delay Time ––– 78 ––– RG= 2.6
tf Fall Time ––– 88 ––– VGS = 10V
Ciss Input Capacitance ––– 9620 –––
pF
VGS = 0V
Coss Output Capacitance ––– 670 ––– VDS = 50V
Crss Reverse Transfer Capacitance ––– 250 ––– ƒ = 1.0MHz
Coss eff.(ER)
Effective Output Capacitance
(Energy Related) ––– 820 ––– VGS = 0V, VDS = 0V to 80V
Coss eff.(TR) Output Capacitance (Time Related) ––– 950 ––– VGS = 0V, VDS = 0V to 80V
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current ––– ––– 180
A
MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current ––– ––– 670 integral reverse
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C,IS = 75A,VGS = 0V
trr Reverse Recovery Time ––– 50 75 ns TJ = 25°C VDD = 85V
––– 60 90 TJ = 125°C IF = 75A,
Qrr Reverse Recovery Charge ––– 94 140
nC TJ = 25°C di/dt = 100A/µs
––– 140 210 TJ = 125°C
IRRM Reverse Recovery Current ––– 3.5 ––– A TJ = 25°C
gfs Forward Trans conductance 160 ––– ––– S VDS = 50V, ID = 75A
D
S
G
Notes:
Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 120A. Note that
current limitations arising from heating of the device leads may occur with some lead mounting arrangements.
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.033mH, RG = 25, IAS = 108A, VGS =10V. Part not recommended for use above
this value.
I
SD 75A, di/dt 630A/µs, VDD V(BR)DSS, TJ 175°C.
Pulse width 400µs; duty cycle 2%.
C
oss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
C
oss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.
R
is measured at TJ approximately 90°C.
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AUIRFP4110
Qualification Information†
Qualification Level
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive qualification. IR’s
Industrial and Consumer qualification level is granted by extension of
the higher Automotive level.
Moisture Sensitivity Level TO-247AC N/A
ESD
Machine Model Class M4 (+/- 800)††
AEC-Q101-002
Human Body Model Class H3A (+/- 6000V)††
AEC-Q101-001
Charged Device Model Class C5 (+/- 2000)††
AEC-Q101-005
RoHS Compliant Yes
† Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/
†† Highest passing voltage.
4 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback January 29, 2014
AUIRFP4110
Fig 1. Typical Output Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
Fig 3. Typical Transfer Characteristics
Fig 2. Typical Output Characteristics
0.1 110 100
VDS, Drain-to-Source Voltage (V)
10
100
1000
ID, Drain-to-Source Current (A)
VGS
TOP 15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
BOTTOM 4.5V
60µs PULSE WIDTH
Tj = 25°C
4.5V
0.1 110 100
VDS, Drain-to-Source Voltage (V)
10
100
1000
ID, Drain-to-Source Current (A)
4.5V
60µs PULSE WIDTH
Tj = 175°C
VGS
TOP 15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
BOTTOM 4.5V
1 2 3 4 5 6 7
VGS, Gate-to-Source Voltage (V)
0.1
1
10
100
1000
ID, Drain-to-Source Current (A)
TJ = 25°C
TJ = 175°C
VDS = 25V
60µs PULSE WIDTH
-60 -40 -20 020 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
0.5
1.0
1.5
2.0
2.5
3.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 75A
VGS = 10V
110 100
VDS, Drain-to-Source Voltage (V)
100
1000
10000
100000
C, Capacitance (pF)
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
0 50 100 150 200
QG, Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
VGS, Gate-to-Source Voltage (V)
VDS= 80V
VDS= 50V
ID= 75A
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AUIRFP4110
Fig 8. Maximum Safe Operating Area
Fig 12. Threshold Voltage vs. Temperature
Fig 7. Typical Source-Drain Diode Forward Voltage
0.00.51.01.52.0
VSD, Source-to-Drain Voltage (V)
0.1
1
10
100
1000
ISD, Reverse Drain Current (A)
TJ = 25°C
TJ = 175°C
VGS = 0V
0 1 10 100 1000
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
10000
ID, Drain-to-Source Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS(on)
Tc = 25°C
Tj = 175°C
Single Pulse
100µsec
1msec
10msec
DC
25 50 75 100 125 150 175
TC , Case Temperature (°C)
0
20
40
60
80
100
120
140
160
180
ID, Drain Current (A)
Limited By Package
-60 -40 -20 020 40 60 80 100 120 140 160 180
TJ , Temperature ( °C )
90
95
100
105
110
115
120
125
V(BR)DSS, Drain-to-Source Breakdown Voltage (V)
Id = 5mA
0 20 40 60 80 100 120
VDS, Drain-to-Source Voltage (V)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Energy (µJ)
Fig 11. Typical Coss Stored Energy
Fig 9. Maximum Drain Current vs. Case Temperature
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
0
100
200
300
400
500
600
700
800
EAS , Single Pulse Avalanche Energy (mJ)
ID
TOP 17A
27A
BOTTOM 108A
Fig 10. Drain-to–Source Breakdown Voltage
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Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1E-006 1E-005 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)
0.0001
0.001
0.01
0.1
1
Thermal Response ( Z thJC )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE ) Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Ri (°C/W)
i (sec)
0.09876251 0.000111
0.2066697 0.001743
0.09510464 0.012269
J
J
1
1
2
2
3
3
R
1
R
1
R
2
R
2
R
3
R
3
C
C
Ci= iRi
Ci= iRi
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
0
50
100
150
200
250
EAR , Avalanche Energy (mJ)
TOP Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 108A
Fig 15. Maximum Avalanche Energy vs. Temperature
Fig 14. Avalanche Current vs. Pulse width
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1.Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not
exceeded.
3. Equation below based on circuit and waveforms shown in Figures
22a,22b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not exceed Tjmax
(assumed as 25°C in figure 14 , 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC (D, tav) = Transient thermal resistance, see Figures 13)
PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
Iav = 2T/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
tav (sec)
0.1
1
10
100
1000
Avalanche Current (A)
0.05
Duty Cycle = Single Pulse
0.10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 150°C.
0.01
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150°C and
Tstart =25°C (Single Pulse)
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AUIRFP4110
Fig 16. Threshold Voltage vs. Temperature Fig 17. Typical Recovery Current vs. dif/dt
Fig 18. Typical Recovery Current vs. dif/dt
Fig 20. Typical Stored Charge vs. dif/dt
-75 -50 -25 025 50 75 100 125 150 175 200
TJ , Temperature ( °C )
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VGS(th), Gate threshold Voltage (V)
ID = 250µA
ID = 1.0mA
ID = 1.0A
0200 400 600 800 1000
diF /dt (A/µs)
0
5
10
15
20
25
IRR (A)
IF = 30A
VR = 85V
TJ = 25°C
TJ = 125°C
0200 400 600 800 1000
diF /dt (A/µs)
0
5
10
15
20
25
IRR (A)
IF = 45A
VR = 85V
TJ = 25°C
TJ = 125°C
0200 400 600 800 1000
diF /dt (A/µs)
80
160
240
320
400
480
560
QRR (A)
IF = 30A
VR = 85V
TJ = 25°C
TJ = 125°C
Fig 19. Typical Stored Charge vs. dif/dt
0200 400 600 800 1000
diF /dt (A/µs)
80
160
240
320
400
480
560
QRR (A)
IF = 45A
VR = 85V
TJ = 25°C
TJ = 125°C
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Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
Fig 22a. Unclamped Inductive Test Circuit
R
G
I
AS
0.01
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
Fig 23a. Switching Time Test Circuit
Fig 24a. Gate Charge Test Circuit
tp
V
(BR)DSS
I
AS
Fig 22b. Unclamped Inductive Waveforms
Fig 23b. Switching Time Waveforms
Vds
Vgs
Id
Vgs(th)
Qgs1 Qgs2 Qgd Qgodr
Fig 24b. Gate Charge Waveform
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AUIRFP4110
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
TO-247AC package is not recommended for Surface Mount Application.
YWWA
XX XX
Date Code
Y= Year
WW= Work Week
A= Automotive, LeadFree
AUFP4110
Lot Code
Part Number
IR Logo
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AUIRFP4110
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serve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and
services at any time and to discontinue any product or services without notice. Part numbers designated with the “AU”
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der acknowledgment.
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