Philips Semiconductors Product specification High-speed diode PMBD914 FEATURES DESCRIPTION PINNING e Small plastic SMD package The PMBD914 is a high-speed PIN DESCRIPTION * High switching speed: max. 4 ns switching diode fabricated in planar F anode . . technology, and encapsulated in the e Continuous reverse voltage: small plastic SMD SOT23 package. 2 not connected max. 3 cathode Repetitive peak reverse voltage: max. 85 V * Repetitive peak forward current: max. 500 mA e Reverse recovery time: max. 4 ns. APPLICATIONS High-speed switching in thick and thin-film circuits. Marking code: p5D. Fig.1 Simplified outline (SOT23) and symbol. MAM185 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Varo repetitive peak reverse voltage ~ 85 Vv Vr continuous reverse voltage ~ 70 Vv Ie continuous forward current see Fig.2; note 1 ~ 215 mA lerpm repetitive peak forward current ~ 500 mA lesm non-repetitive peak forward current | square wave; T; = 25 C prior to surge; see Fig.4 t=1us ~ 4 A t=1ms ~ 1 A t=1s ~- 05 |A Prot total power dissipation Tamb = 25 C; note 1 ~ 250 mw Tstg storage temperature -65 +150 C Tj junction temperature - 150 C Note 1. Device mounted on an FR4 printed-circuit board. 1996 Sep 18 1-240Philips Semiconductors Product specification High-speed diode PMBD914 ELECTRICAL CHARACTERISTICS Tj = 25 C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Ve forward voltage see Fig.3 lr=1mA - 715 mV lp =10mA - 855 mV lr = 50 mA ~ 10 |V Ir = 150 mA ~ 1.25 |V Ip reverse current see Fig.5 Va=25V - 25 nA Va=75V - 1.0 [pA Vr = 25 V; Tj = 150 C ~ 30 pA Vr = 75 V; Tj = 150C - 50 pA Ca diode capacitance f = 1 MHz; Vp = 0; see Fig.6 - 1.5 | pF tr reverse recovery time when switched from I = 10 mA to - 4 ns In = 10 mA; RF, = 100 Q; measured at Ip = 1 mA; see Fig.7 Vir forward recovery voltage when switched from Ir = 10 mA; - 1.75 |V t, = 20 ns; see Fig.8 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE | UNIT Pith j-tp thermai resistance from junction to tie-point 330 K/W Rinj-a thermal resistance from junction to ambient | note 1 500 K/W Note 1. Device mounted on an FR4 printed-circuit board. 1996 Sep 18 4-241Philips Semiconductors Product specification High-speed diode PMBD914 GRAPHICAL DATA 250 (mA) 200 100 0 50 100 156 200 9 1 Ve) 2 Tamb (C) : (1) Tj = 150 C; typical values. Device mounted on an FR4 printed-circuit board. (2) Tj =25 C; typical values. (3) 7) = 25 C; maximum values. Fig.2 Maximum permissible continuous forward current as a function of ambient Fig.3 Forward current as a function of forward temperature. voltage. 10? 'Fsm (A) 10 1971 104 1 10 107 10 ty (us) Based on square wave currents. Tj = 25 C prior to surge. Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. 1996 Sep 18 1-242Philips Semiconductors Product specification High-speed diode PMBD914 7, (9c) 200 Fig.5 Reverse current as a function of junction temperature. 08 (pF) 0.6 0.4 0.2 2 1 Vpivy '6 f= 1 MHz; T= 25C, Fig.6 Diode capacitance as a function of reverse voltage; typical values. 1996 Sep 18 1-243Phitips Semiconductors Product specification High-speed diode PMBD914 Ce 7 l 5 tr tp + [ t > I 1% r Rg= S00 | SAMPLING F w Lo pam me mm -| |oscitoscore t VeVptlpxRg A,= 500 f 4 1 | VR 90% (1) MGA681 input signal output signal Q) In=1mA. Fig.7 .Reverse recovery voltage test circuit and waveforms. +e, 1k2 460 0 | y 7; 90% Rig= 60 9 OSCILLOSCOPE Vir D.U.T. | | R,= 502 10% MGAG62 I t t tl tr a tp input output signal signal Fig.8 Forward recovery voltage test circuit and waveforms. 1996 Sep 18 1-244