Issue 1 - January 2008 1 www.zetex.com
© Zetex Semiconductors plc 2008
ZXMS6001N3
60V N-channel self protected enhancement mode
INTELLIFETTM MOSFET
Summary
Continuous drain source voltage VDS = 60V
On-state resistance 675mΩ
Max nominal load current (a) 1.1A (VIN = 5V)
Min nominal load current (c) 0.7A (VIN = 5V)
Clamping Energy 550mJ
Description
Low input current self protected low side MOSFET intended for Vin=5V
applications. Monolithic over temperature, over current, over voltage
(active clamp) and ESD protected logic level functionality. Intended as
a general purpose switch.
Note:
The tab is connected to the source pin and must be electrically isolated
from the drain pin. Connection of significant copper to the drain pin is
recommended for best thermal performance.
Features
• Short circuit protection with auto restart
• Over voltage protection (active clamp)
• Thermal shutdown with auto restart
• Over-current protection
• Input protection (ESD)
• Load dump protection (actively protects load)
• Low input current
Ordering information
Device Package Part mark Reel size
(inches)
Tape width
(mm)
Quantity
per reel
ZXMS6001N3TA SOT223 ZXMS6001 7 12 embossed 1,000
S
SOT223
S
D
IN
ZXMS6001N3
Issue 1 - January 2008 2 www.zetex.com
© Zetex Semiconductors plc 2008
Functional block diagram
Applications and information
• Especially suited for loads with a high in-rush current such as lamps and motors.
• All types of resistive, inductive and capacitive loads in switching applications.
•µC compatible power switch for 12V and 24V DC applications.
• Automotive rated.
• Replaces electromechanical relays and discrete circuits.
Linear Mode capability - the current-limiting protection circuitry is designed to de-activate at low
Vds, in order not to compromise the load current during normal operation. The design max DC
operating current is therefore determined by the thermal capability of the package/board
combination, rather than by the protection circuitry. This does not compromise the products
ability to self protect itself at low VDS.
S
Over Voltage
Protection
Over current
protection
Over temperature
protection
Logic
Human body
ESD
protection
D
IN dV/dt
limitation
ZXMS6001N3
Issue 1 - January 2008 3 www.zetex.com
© Zetex Semiconductors plc 2008
Absolute maximum ratings
Thermal resistance
NOTES:
(a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 board with a high coverage of single sided 2oz weight
copper. Allocation of 6cm2 copper 33% to source tab and 66% to drain pin with source tab and drain pin electrically
isolated.
(b) For a device surface mounted on FR4 board as (a) and measured at t<=10s.
(c) For a device surface mounted on FR4 board with the minimum copper required for electrical connections.
Parameter Symbol Limit Unit
Continuous Drain-Source Voltage VDS 60 V
Drain-Source Voltage for short circuit protection VIN = 5V VDS(SC) 36 V
Continuous Input Voltage VIN -0.2 ... +10 V
Peak Input Voltage VIN -0.2 ... +20 V
Continuous Input Current
-0.2V=VIN=10V
VIN<-0.2V or VIN>10V
IIN
No limit
| IIN | ≤2
mA
Operating Temperature Range Tj,
-40 to +150
°C
Storage Temperature Range Tstg
-55 to +150
°C
Power Dissipation at TA =25°C(a) PD1.5 W
Power Dissipation at TA =25°C(c) PD0.6 W
Continuous Drain Current @ VIN=5V; TA=25°C(a) ID1.1 A
Continuous Drain Current @ VIN=5V; TA=25°C(c) ID0.7 A
Continuous Source Current (Body Diode)(a) IS2.0 A
Pulsed Source Current (Body Diode)(b) IS3.3 A
Unclamped single pulse inductive energy EAS 550 mJ
Load dump protection VLoadDump 80 V
Electrostatic Discharge (Human Body Model) VESD 4000 V
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 40/150/56
Parameter Symbol Value Unit
Junction to ambient(a) R⍜JA 83 °C/W
Junction to ambient(b) R⍜JA 45 °C/W
Junction to ambient(c) R⍜JA 208 °C/W
ZXMS6001N3
Issue 1 - January 2008 4 www.zetex.com
© Zetex Semiconductors plc 2008
Recommended operating conditions
The ZXMS6001 is optimized for use with µC operating from 5V supplies.
Electrical characteristics (at Tamb = 25°C unless otherwise stated).
NOTES:
(d) Recommended input voltage range over which protection circuits function as specified.
(e) The drain current is limited to a reduced value when Vds exceeds a safe level
Symbol Description Min Max Units
VIN Input voltage range 0 6 V
TAAmbient temperature range -40 125 °C
VIH High level input voltage for MOSFET(d) 46V
VPPeripheral supply voltage
(voltage to which load is referred)
60 V
Parameter Symbol Min Typ Max Unit Conditions
Static Characteristics
Drain-Source Clamp
Voltage
VDS(AZ) 60 70 75 V ID=10mA
Off state Drain Current IDSS 0.1 3 AV
DS=12V, VIN=0V
Off state Drain Current IDSS 315AV
DS=32V, VIN=0V
Input Threshold Voltage(d) VIN(th) 11.82.5VV
DS=VGS, ID=10mA
Input Current IIN 150 AV
IN=+3V
Input Current IIN 335 500 AV
IN=+5V, all
circumstances
Static Drain-Source
On-State Resistance
RDS(on) 12ΩVIN=3V, ID=0.1A
Static Drain-Source
On-State Resistance
RDS(on) 520 675 mΩVIN=5V, ID=0.7A
Current Limit(e) ID(LIM) 11.83 AV
IN=5V, VDS>5V
Dynamic Characteristics
Turn-On Time
(VIN to 90% ID)
ton 27 40 sR
L=22Ω, VIN=0 to 5V,
VDD=12V
Turn-Off time
(VIN to 90% ID)
toff 26 40 sR
L=22Ω, VIN=5V to 0V,
VDD=12V
Slew Rate On
(70 to 50% VDD)
-dV
DS
/dt
on
1.4 10 V/sR
L=22Ω, VIN=0 to 5V,
VDD=12V
Slew Rate Off
(50 to 70% VDD)
DVDS/dton 1.2 10 V/sR
L=22Ω, VIN=5V to 0V,
VDD=12V
ZXMS6001N3
Issue 1 - January 2008 5 www.zetex.com
© Zetex Semiconductors plc 2008
f Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
datasheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed
for continuous, repetitive operation.
Parameter Symbol Min Typ Max Unit Conditions
Protection Functions (f)
Minimum input voltage
for over temperature
protection
VPROT 4 3.5 V Ttrip>150°C
Maximum input voltage
for over temperature
protection
VPROT 7 6 V Ttrip>150°C
Thermal Overload Trip
Temperature
TJT 150 175 °C
Thermal hysteresis 8 °C
Unclamped single pulse
inductive energy
Tj=25°C
EAS 550 mJ ID(ISO)=0.7A, VDD=32V
Unclamped single pulse
inductive energy
Tj=150°C
EAS 200 mJ ID(ISO)=0.7A, VDD=32V
Inverse Diode
Source drain voltage VSD 1VV
IN=0V, -ID=1.4A
012345
0
50
100
150
200
250
300
350 VDS = 13.5V
VIN = 5V
IIN - Input Current (µA)
VIN - In put Voltage (V) -40 -20 0 20 40 60 80 100 120 140
0
1
2
3
VIN = 5V
Single Pulse = 300µs
VDS = 12V
Curren t Limit v Temperature
Input Current v Input Voltage Temperature (°C)
IdLim Current Limit (A)
ZXMS6001N3
Issue 1 - January 2008 6 www.zetex.com
© Zetex Semiconductors plc 2008
Application information
The current-limit protection circuitry is designed to de-activate at low Vds to prevent the load
current from being unnecessarily restricted during normal operation. The design max DC
operating current is therefore determined by the thermal capability of the package/board
combination, rather than by the protection circuitry (see graph page 8 'typical output
characteristic'). This does not compromise the products ability to self protect at low VDS.
The overtemperature protection circuit trips at a minimum of 150°C. So the available package
dissipation reduces as the maximum required ambient temperature increases. This leads to the
following maximum recommended continuous operating currents.
Minimum copper area characteristics
For minimum copper condition as described in note (c)
Max Ambient Temperature TAMaximum continuous current
VIN=5V
25°C at Vin=5V 720
70°C at Vin=5V 575
85°C at Vin=5V 520
125°C at Vin=5V 320
1 10 100
1m
10m
100m
1
1ms
Single Pulse
Tamb=25°C
RDS(on)
Limited
10ms
100ms
1s
Safe Op erating Area
ID Drain Current (A)
VDS Drain-Source Voltage (V)
DC
0 20 40 60 80 100 120 140 160
0.0
0.2
0.4
0.6 see note (c) - Minimum Copper
Derati n g C urv e
Temperature (°C)
Max Power Dissipation (W)
100µ 1m 10m 100m 1 10 100 1k
0
50
100
150
200 Tamb=25°C
Transient Thermal Imp ed an ce
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
Thermal Resistance (°C/W)
Pulse Width (s) 100µ 1m 10m 100m 1 10 100 1k
1
10
100
Single Pulse
Tamb=25°C
Pulse Power Dissipation
Pulse Width (s)
Maximum Power (W)
ZXMS6001N3
Issue 1 - January 2008 7 www.zetex.com
© Zetex Semiconductors plc 2008
Large copper area characteristics
For large copper area as described in note (a)
Max Ambient Temperature TAMaximum continuous current
VIN=5V
25°C at Vin=5V 1140
70°C at Vin=5V 915
85°C at Vin=5V 825
125°C at Vin=5V 510
1 10 100
10m
100m
1
1ms
Single Pulse
Tamb=25°C
RDS(on)
Limited
10ms
100ms
1s
Safe Op erating A rea
ID Drain Current (A)
VDS Drain-Sou rce Voltage (V)
DC
0 20 40 60 80 100 120 140 160
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
See Note (a) 6cm2 Copper
Derating Curve
Temperatu re (°C)
Max Po wer Dissipation (W)
100µ 1m 10m 100m 1 10 100 1k
0
10
20
30
40
50
60
70
80
90 Tamb=25°C
Transient Thermal Impedance
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
Thermal Resistance (°C/W)
Pulse Width (s) 100µ 1m 10m 100m 1 10 100 1k
1
10
100
Single Pulse
Tamb=25°C
Pulse Power Dissipation
Pu lse Width (s)
Maximum Power (W)
ZXMS6001N3
Issue 1 - January 2008 8 www.zetex.com
© Zetex Semiconductors plc 2008
0 1 2 3 4 5 6 7 8 9 10 1112 1314 1516
0
1
2
3
-20µ 0 20µ 40µ 60µ 80µ 100µ120µ140µ160µ
0
2
4
6
8
10
12
-50 -25 0 25 50 75 100 125 150
0.4
0.6
0.8
1.0
1.2
1.4
3.0 3.5 4.0 4.5 5.0 5.5 6.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.4 0.6 0.8 1.0 1.2
0.01
0.1
1
10
-50 -25 0 25 50 75 100 125 150
0
200
400
600
800
1000
6V
5V
3V
4V
Typical Output C h aracteristic
T = 25°C
VIN
ID Drain Current (A)
VDS Drain-Source Voltage (V)
Current limit inactive
Current limit active
RD = 22Ω
RIN = 25Ω
VDS
VIN
Switching Sp eed
Voltage (V)
Time (s)
Threshold Voltage vs Temperature
VIN = VDS
ID = 1 mA
Normalised VIN(th)
TJ Junction Temperature (°C)
On-Resistance vs Input Voltage
TJ = 25°C
ID = 0.7A
RDS(on) On-Resistance (Ω)
VIN In put Voltage (V)
TJ = 150°C
TJ = 25°C
Source-Drain D iode Forward Voltage
VSD Diode Forward Voltage (V)
IS So urce Current (A)
VIN = 5V
ID = 0.7A
O n-state Resistance v s Temperature
RDS(on) On-Resistance (mΩ)
TJ Junction Temperature (°C)
ZXMS6001N3
Issue 1 - January 2008 9 www.zetex.com
© Zetex Semiconductors plc 2008
Package outline - SOT223
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
Dim. Millimeters Inches Dim. Millimeters Inches
Min. Max. Min. Max. Min. Max. Min. Max.
A - 1.80 - 0.071 D 6.30 6.70 0.248 0.264
A1 0.02 0.10 0.0008 0.004 e 2.30 BSC 0.0905 BSC
A2 1.55 1.65 0.0610 0.0649 e1 4.60 BSC 0.181 BSC
b 0.66 0.84 0.026 0.033 E 6.70 7.30 0.264 0.287
b2 2.90 3.10 0.114 0.122 E1 3.30 3.70 0.130 0.146
C 0.23 0.33 0.009 0.013 L 0.90 - 0.355 -
ZXMS6001N3
Issue 1 - January 2008 10www.zetex.com
© Zetex Semiconductors plc 2008
Zetex sales offices
Europe
Zetex GmbH
Kustermann-park
Balanstraße 59
D-81541 München
Germany
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
europe.sales@zetex.com
Americas
Zetex Inc
700 Veterans Memorial Highway
Hauppauge, NY 11788
USA
Telephone: (1) 631 360 2222
Fax: (1) 631 360 8222
usa.sales@zetex.com
Asia Pacific
Zetex (Asia Ltd)
3701-04 Metroplaza Tower 1
Hing Fong Road, Kwai Fong
Hong Kong
Telephone: (852) 26100 611
Fax: (852) 24250 494
asia.sales@zetex.com
Corporate Headquarters
Zetex Semiconductors plc
Zetex Technology Park, Chadderton
Oldham, OL9 9LL
United Kingdom
Telephone: (44) 161 622 4444
Fax: (44) 161 622 4446
hq@zetex.com
© 2008 Published by Zetex Semiconductors plc
Definitions
Product change
Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or
service. Customers are solely responsible for obtaining the latest relevant information before placing orders.
Applications disclaimer
The circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for
the user’s application and meets with the user’s requirements. No representation or warranty is given and no liability whatsoever is
assumed by Zetex with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights
arising from such use or otherwise. Zetex does not assume any legal responsibility or will not be held legally liable (whether in contract,
tort (including negligence), breach of statutory duty, restriction or otherwise) for any damages, loss of profit, business, contract,
opportunity or consequential loss in the use of these circuit applications, under any circumstances.
Life support
Zetex products are specifically not authorized for use as critical components in life support devices or systems without the express written
approval of the Chief Executive Officer of Zetex Semiconductors plc. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body
or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to
cause the failure of the life support device or to affect its safety or effectiveness.
Reproduction
The product specifications contained in this publication are issued to provide outline information only which (unless agreed by the
company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a
representation relating to the products or services concerned.
Terms and Conditions
All products are sold subjects to Zetex’ terms and conditions of sale, and this disclaimer (save in the event of a conflict between the two
when the terms of the contract shall prevail) according to region, supplied at the time of order acknowledgement.
For the latest information on technology, delivery terms and conditions and prices, please contact your nearest Zetex sales office.
Quality of product
Zetex is an ISO 9001 and TS16949 certified semiconductor manufacturer.
To ensure quality of service and products we strongly advise the purchase of parts directly from Zetex Semiconductors or one of our
regionally authorized distributors. For a complete listing of authorized distributors please visit: www.zetex.com/salesnetwork
Zetex Semiconductors does not warrant or accept any liability whatsoever in respect of any parts purchased through unauthorized sales channels.
ESD (Electrostatic discharge)
Semiconductor devices are susceptible to damage by ESD. Suitable precautions should be taken when handling and transporting devices.
The possible damage to devices depends on the circumstances of the handling and transporting, and the nature of the device. The extent
of damage can vary from immediate functional or parametric malfunction to degradation of function or performance in use over time.
Devices suspected of being affected should be replaced.
Green compliance
Zetex Semiconductors is committed to environmental excellence in all aspects of its operations which includes meeting or exceeding reg-
ulatory requirements with respect to the use of hazardous substances. Numerous successful programs have been implemented to reduce
the use of hazardous substances and/or emissions.
All Zetex components are compliant with the RoHS directive, and through this it is supporting its customers in their compliance with
WEEE and ELV directives.
Product status key:
“Preview” Future device intended for production at some point. Samples may be available
“Active” Product status recommended for new designs
“Last time buy (LTB)” Device will be discontinued and last time buy period and delivery is in effect
“Not recommended for new designs”
Device is still in production to support existing designs and production
“Obsolete” Production has been discontinued
Datasheet status key:
“Draft version” This term denotes a very early datasheet version and contains highly provisional information, which
may change in any manner without notice.
“Provisional version” This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance.
However, changes to the test conditions and specifications may occur, at any time and without notice.
“Issue” This term denotes an issued datasheet containing finalized specifications. However, changes to
specifications may occur, at any time and without notice.
