IPP60R160P7 MOSFET 600VCoolMOSP7PowerTransistor PG-TO220 tab TheCoolMOSTM7thgenerationplatformisarevolutionarytechnologyfor highvoltagepowerMOSFETs,designedaccordingtothesuperjunction (SJ)principleandpioneeredbyInfineonTechnologies.The600V CoolMOSTMP7seriesisthesuccessortotheCoolMOSTMP6series.It combinesthebenefitsofafastswitchingSJMOSFETwithexcellentease ofuse,e.g.verylowringingtendency,outstandingrobustnessofbody diodeagainsthardcommutationandexcellentESDcapability. Furthermore,extremelylowswitchingandconductionlossesmake switchingapplicationsevenmoreefficient,morecompactandmuch cooler. Features *Suitableforhardandsoftswitching(PFCandLLC)duetoanoutstanding commutationruggedness *Significantreductionofswitchingandconductionlosses *ExcellentESDrobustness>2kV(HBM)forallproducts *BetterRDS(on)/packageproductscomparedtocompetitionenabledbya lowRDS(on)*A(below1Ohm*mm) Drain Pin 2 Gate Pin 1 Source Pin 3 Benefits *Easeofuseandfastdesign-inthroughlowringingtendencyandusage acrossPFCandPWMstages *Simplifiedthermalmanagementduetolowswitchingandconduction losses *Increasedpowerdensitysolutionsenabledbyusingproductswith smallerfootprintandhighermanufacturingqualitydueto>2kVESD protection *Suitableforawidevarietyofapplicationsandpowerranges Potentialapplications PFCstages,hardswitchingPWMstagesandresonantswitchingstages fore.g.PCSilverbox,Adapter,LCD&PDPTV,Lighting,Server,Telecom andUPS. Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj,max 650 V RDS(on),max 160 m Qg,typ 31 nC ID,pulse 66 A Eoss @ 400V 3.5 J Body diode diF/dt 900 A/s Type/OrderingCode Package IPP60R160P7 PG-TO 220-3 Final Data Sheet Marking 60R160P7 1 RelatedLinks see Appendix A Rev.2.0,2019-02-26 600VCoolMOSP7PowerTransistor IPP60R160P7 TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Final Data Sheet 2 Rev.2.0,2019-02-26 600VCoolMOSP7PowerTransistor IPP60R160P7 1Maximumratings atTj=25C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) Values Unit Note/TestCondition 20 13 A TC=25C TC=100C - 66 A TC=25C - - 69 mJ ID=4.1A; VDD=50V; see table 10 EAR - - 0.35 mJ ID=4.1A; VDD=50V; see table 10 Avalanche current, single pulse IAS - - 4.1 A - MOSFET dv/dt ruggedness dv/dt - - 80 V/ns VDS=0...400V Gate source voltage (static) VGS -20 - 20 V static; Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz) Power dissipation Ptot - - 81 W TC=25C Storage temperature Tstg -55 - 150 C - Operating junction temperature Tj -55 - 150 C - Mounting torque - - - 60 Ncm M3 and M3.5 screws IS - - 20 A TC=25C Diode pulse current IS,pulse - - 66 A TC=25C Reverse diode dv/dt3) dv/dt - - 50 V/ns VDS=0...400V,ISD<=20A,Tj=25C see table 8 Maximum diode commutation speed diF/dt - - 900 A/s VDS=0...400V,ISD<=20A,Tj=25C see table 8 Insulation withstand voltage VISO - - n.a. V Vrms,TC=25C,t=1min Min. Typ. Max. ID - - Pulsed drain current2) ID,pulse - Avalanche energy, single pulse EAS Avalanche energy, repetitive Continuous diode forward current 2) 1) Limited by Tj,max. Maximum Duty Cycle D = 0.50 Pulse width tp limited by Tj,max 3) Identical low side and high side switch with identical RG 2) Final Data Sheet 3 Rev.2.0,2019-02-26 600VCoolMOSP7PowerTransistor IPP60R160P7 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case Values Unit Note/TestCondition Min. Typ. Max. RthJC - - 1.55 C/W - Thermal resistance, junction - ambient RthJA - - 62 C/W leaded Thermal resistance, junction - ambient RthJA for SMD version - - - C/W - Soldering temperature, wavesoldering only allowed at leads - - 260 C Final Data Sheet Tsold 4 1.6mm (0.063 in.) from case for 10s Rev.2.0,2019-02-26 600VCoolMOSP7PowerTransistor IPP60R160P7 3Electricalcharacteristics atTj=25C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 3.5 4.0 V VDS=VGS,ID=0.35mA - 10 1 - A VDS=600V,VGS=0V,Tj=25C VDS=600V,VGS=0V,Tj=150C IGSS - - 1000 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 0.120 0.281 0.160 - VGS=10V,ID=6.3A,Tj=25C VGS=10V,ID=6.3A,Tj=150C Gate resistance RG - 9 - f=1MHz,opendrain Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 600 - Gate threshold voltage V(GS)th 3.0 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics Parameter Symbol Input capacitance Values Min. Typ. Max. Ciss - 1317 - pF VGS=0V,VDS=400V,f=250kHz Output capacitance Coss - 23 - pF VGS=0V,VDS=400V,f=250kHz Effective output capacitance, energy related1) Co(er) - 43 - pF VGS=0V,VDS=0...400V Effective output capacitance, time related2) Co(tr) - 454 - pF ID=constant,VGS=0V,VDS=0...400V Turn-on delay time td(on) - 18 - ns VDD=400V,VGS=13V,ID=6.3A, RG=8.0;seetable9 Rise time tr - 12 - ns VDD=400V,VGS=13V,ID=6.3A, RG=8.0;seetable9 Turn-off delay time td(off) - 100 - ns VDD=400V,VGS=13V,ID=6.3A, RG=8.0;seetable9 Fall time tf - 8 - ns VDD=400V,VGS=13V,ID=6.3A, RG=8.0;seetable9 Unit Note/TestCondition Table6Gatechargecharacteristics Parameter Symbol Gate to source charge Values Min. Typ. Max. Qgs - 7 - nC VDD=400V,ID=6.3A,VGS=0to10V Gate to drain charge Qgd - 10 - nC VDD=400V,ID=6.3A,VGS=0to10V Gate charge total Qg - 31 - nC VDD=400V,ID=6.3A,VGS=0to10V Gate plateau voltage Vplateau - 5.1 - V VDD=400V,ID=6.3A,VGS=0to10V 1) Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V 2) Final Data Sheet 5 Rev.2.0,2019-02-26 600VCoolMOSP7PowerTransistor IPP60R160P7 Table7Reversediodecharacteristics Parameter Symbol Diode forward voltage Values Unit Note/TestCondition - V VGS=0V,IF=6.3A,Tj=25C 190 - ns VR=400V,IF=3A,diF/dt=100A/s; see table 8 - 1.7 - C VR=400V,IF=3A,diF/dt=100A/s; see table 8 - 17 - A VR=400V,IF=3A,diF/dt=100A/s; see table 8 Min. Typ. Max. VSD - 0.9 Reverse recovery time trr - Reverse recovery charge Qrr Peak reverse recovery current Irrm Final Data Sheet 6 Rev.2.0,2019-02-26 600VCoolMOSP7PowerTransistor IPP60R160P7 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Safeoperatingarea 102 100 1 s 101 80 10 s 100 60 ID[A] Ptot[W] 100 s 10-1 1 ms 40 10 10 ms DC 20 0 -2 10-3 0 25 50 75 100 125 10-4 150 100 101 TC[C] 102 103 VDS[V] Ptot=f(TC) ID=f(VDS);TC=25C;D=0;parameter:tp Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 2 101 10 1 s 1 10 10 s 100 100 0.5 ZthJC[K/W] ID[A] 100 s 10-1 1 ms 10-2 0.2 0.1 0.05 0.02 0.01 10-1 10 ms DC 10-3 10-4 single pulse 100 101 102 103 10-2 10-5 10-4 VDS[V] 10-2 10-1 tp[s] ID=f(VDS);TC=80C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tP);parameter:D=tp/T 7 Rev.2.0,2019-02-26 600VCoolMOSP7PowerTransistor IPP60R160P7 Diagram5:Typ.outputcharacteristics Diagram6:Typ.outputcharacteristics 80 60 20 V 10 V 70 60 20 V 50 8V 10 V 7V 8V 40 7V ID[A] ID[A] 50 40 6V 30 30 5.5 V 6V 20 5.5 V 10 20 5V 10 5V 0 4.5 V 4.5 V 0 5 10 15 0 20 0 5 10 VDS[V] 15 20 VDS[V] ID=f(VDS);Tj=25C;parameter:VGS ID=f(VDS);Tj=125C;parameter:VGS Diagram7:Typ.drain-sourceon-stateresistance Diagram8:Drain-sourceon-stateresistance 0.600 3.000 2.500 6V RDS(on)[] 6.5 V 7V 10 V 0.400 20 V RDS(on)[normalized] 5.5 V 2.000 1.500 1.000 0.500 0.200 0 10 20 30 40 50 0.000 -50 -25 0 25 ID[A] RDS(on)=f(ID);Tj=125C;parameter:VGS Final Data Sheet 50 75 100 125 150 Tj[C] RDS(on)=f(Tj);ID=6.3A;VGS=10V 8 Rev.2.0,2019-02-26 600VCoolMOSP7PowerTransistor IPP60R160P7 Diagram9:Typ.transfercharacteristics Diagram10:Typ.gatecharge 80 12 25 C 10 60 120 V 150 C VGS[V] ID[A] 8 40 400 V 6 4 20 2 0 0 2 4 6 8 10 0 12 0 5 10 15 VGS[V] 20 25 30 35 40 Qgate[nC] ID=f(VGS);VDS=20V;parameter:Tj VGS=f(Qgate);ID=6.3Apulsed;parameter:VDD Diagram11:Forwardcharacteristicsofreversediode Diagram12:Avalancheenergy 2 10 80 60 101 EAS[mJ] IF[A] 125 C 25 C 40 100 20 10-1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 25 50 VSD[V] 100 125 150 Tj[C] IF=f(VSD);parameter:Tj Final Data Sheet 75 EAS=f(Tj);ID=4.1A;VDD=50V 9 Rev.2.0,2019-02-26 600VCoolMOSP7PowerTransistor IPP60R160P7 Diagram13:Drain-sourcebreakdownvoltage Diagram14:Typ.capacitances 105 690 680 670 104 660 650 640 C[pF] VBR(DSS)[V] Ciss 103 630 620 610 102 600 590 Coss 580 101 570 560 Crss 550 540 -50 -25 0 25 50 75 100 125 150 100 0 100 200 Tj[C] 300 400 500 VDS[V] VBR(DSS)=f(Tj);ID=1mA C=f(VDS);VGS=0V;f=250kHz Diagram15:Typ.Cossstoredenergy 5 4 Eoss[J] 3 2 1 0 0 100 200 300 400 500 VDS[V] Eoss=f(VDS) Final Data Sheet 10 Rev.2.0,2019-02-26 600VCoolMOSP7PowerTransistor IPP60R160P7 5TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform Rg1 VDS Rg 2 IF Rg1 = Rg 2 Table9Switchingtimes Switching times test circuit for inductive load Switching times waveform VDS 90% VDS VGS VGS 10% td(on) ton tr td(off) tf toff Table10Unclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform V(BR)DS ID VDS VDS Final Data Sheet 11 ID VDS Rev.2.0,2019-02-26 600VCoolMOSP7PowerTransistor IPP60R160P7 6PackageOutlines Figure1OutlinePG-TO220-3,dimensionsinmm/inches Final Data Sheet 12 Rev.2.0,2019-02-26 600VCoolMOSP7PowerTransistor IPP60R160P7 7AppendixA Table11RelatedLinks * IFXCoolMOSP7Webpage:www.infineon.com * IFXCoolMOSP7applicationnote:www.infineon.com * IFXCoolMOSP7simulationmodel:www.infineon.com * IFXDesigntools:www.infineon.com Final Data Sheet 13 Rev.2.0,2019-02-26 600VCoolMOSP7PowerTransistor IPP60R160P7 RevisionHistory IPP60R160P7 Revision:2019-02-26,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2019-02-26 Release of final version Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726Munchen,Germany (c)2018InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics ("Beschaffenheitsgarantie"). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer'scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer'sproductsandanyuseofthe productofInfineonTechnologiesincustomer'sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer's technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 14 Rev.2.0,2019-02-26