Advanced Power MOSFET IRF634A FEATURES -?--f-f Oo Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current: 10uA (Max.) @ Vps = 250V Lower Rogjon): 0-327Q (Typ.) Absolute Maximum Ratings I = 8.1A TO-220 % 1.Gate 2. Drain 3. Source Symbol Characteristic Value Units Voss Drain-to-Source Voltage 250 Vv lo Continuous Drain Current (T.=25C) 8.1 A Continuous Drain Current (T.=100C) 5.1 lom Drain Current-Pulsed (1) 32 A Ves Gate-to-Source Voltage +30 Vv Eas Single Pulsed Avalanche Energy (2) 205 mJ lar Avalanche Current (1) 8.1 A Ear Repetitive Avalanche Energy (1) 7.4 mJ dv/dt Peak Diode Recovery dv/dt (3) 4.8 V/ns Total Power Dissipation (T.=25C) 74 W Po Linear Derating Factor 0.59 w/c Operating Junction and Ty , Tste - 55 to +150 Storage Temperature Range Maximum Lead Temp. for Soldering C TL Purposes, 1/8. from case for 5-seconds 300 Thermal Resistance Symbol Characteristic Typ. Max. Units Rose Junction-to-Case - 1.69 Recs Case-to-Sink 0.5 -- C/W Resa Junction-to-Ambient - 62.5 re Rev. B FAIRCHILD SEMICONDUCTOR 1999 Fairchild Semiconductor CorporationIRF634A N-CHANNEL POWER MOSFET Electrical Characteristics (T,=25C unless otherwise specified) Symbol Characteristic Min. | Typ. | Max. Units Test Condition BVpss_| Drain-Source Breakdown Voltage | 250| -- -- Vs] Vesg=0V,Ip=250nA ABV/AT, | Breakdown Voltage Temp. Coeff. | -- |0.29] -- |V/C|lp=250uA See Fig 7 Vash) | Gate Threshold Voltage 2.0] - | 4.0] V_ | Vps=5V,lp=250nA Gate-Source Leakage , Forward - | -- | 100 nA Vgg=30V ass Gate-Source Leakage , Reverse -- -- |-100 Vag=-30V . -- -- 10 Vps=250V loss Drain-to-Source Leakage Current _ . | 400 pA Vps=200V,T.=125C Static Drain-Source R -- -- 10.45 Vas=10V,Ip=4.05A (4) Psion) | On-State Resistance o os Gis Forward Transconductance -- 6.1 -- oO Vos=40V,1p=4.05A (4) Ciss Input Capacitance -- | 730 | 950 + Vas=0V,Vps=25V, Ff =1 MHz Coss | Output Capacitance - |110] 130] pF : ; See Fig 5 Cres Reverse Transfer Capacitance - | 50 ] 60 tan) | Turn-On Delay Time - | 13 | 40 ; , Vop=125V,Ip=8.1A, t Rise Time - | 14 ] 40 , ns | Rg=12Q tary | Turn-Off Delay Time -- | 53 | 120 ; " See Fig 13 (4) (5) t Fall Time -- | 21 | 50 Q, Total Gate Charge -- | 30 | 40 Vps=200V,Vas5=10V, Qgs Gate-Source Charge - [58] - | nC | 1p=8.1A Qga Gate-Drain (. Miller. ) Charge - 113.5] -- See Fig 6 & Fig 12 (4) (5) Source-Drain Diode Ratings and Characteristics Symbol Characteristic Min. | Typ. | Max.| Units Test Condition Ig Continuous Source Current -- - | 8.1 A Integral reverse pn-diode lou Pulsed-Source Current (1) | -- - | 32 in the MOSFET Vep Diode Forward Voltage (4) | -- - [1.5 | Vi] T)=25C,15=8.1A,Ves=0V tre Reverse Recovery Time -- | 190] -- ns | Ty=25C,|-=8.1A Q Reverse Recovery Charge -- [1.28] -- | pC | di-/dt=100A/us (4) Notes; 1) Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature 2) L=5mH, |,5=8.1A, V,=50V, Rg=27Q, Starting T,=25C 4) Pulse Test: Pulse Width = 250us, Duty Cycle < 2% ( ( (3) Isp <8.1A, di/dt < 210A/us, Voy < BVpgg Starting T, =25C ( ( 5) Essentially Independent of Operating Temperature ee FAIRCHILD Ed SEMICONDUCTORRosen) , [al Drain-Sourme Or Resistance I, , Drain Gurrent [A] Capacitance [pF] N-CHANNEL POWER MOSFET Fig 1. Output Characteristics Top: 15V 10V no 10 80V 7OV . 60V LN] S5V 50V Bottom : 4.5V 4 or we i Qlttes: - : 1. 20ys Rilse Test 2. 7, =25C 491 iui yuu 15? wo 10 Vi, , Drain-Source Voltage [V] Fig 3. On-Resistance vs. Drain Current 1.0 OLB Lecce rc rebeeeeceecsennennned LBD bess eee eee reece eecbes : Vg =2V @Nbe : T, =BC 0.00 1 L 1 L 1 1 1 0 10 2 x rs) 4 , Drain Grrent [A] Fig 5. Capacitance vs. Drain-Source Voltage 10 Gas= Goat Gua ( Gus shorbed ) Gos Sst Ge - EE Ges Goa IRF634A Fig 2. Transfer Characteristics 19 & 4 pT @Nebes : . 1. =0V wv 2. Yg = OV 3. 20 ys Pulse Test 191 L i 6 8 10 Vos 1 Gabe-Sourne Voltage [V] Fig 4. Source-Drain Diode Forward Voltage & 19 # wo : > LY =0Vv / oC: : 2. 20s Bulse est fe. if, yg W's 04 0.6 08 1.0 12 14 1.6 Ven + SoumeDrain Volta [V] Fig 6. Gate Charge vs. Gate-Source Voltage Job 2 . Ye = DV. 5 | riey i | 8 @Netes = 1, =8.1A o 5 10 5m 25 Q, + Total Gabe Charge [rc] ee FAIRCHILD ee SEMICONDUCTORIRF634A N-CHANNEL POWER MOSFET Fig 7. Breakdown Voltage vs. Temperature Fig 8. On-Resistance vs. Temperature 12 3.0 25h 20b.. 15be ai re j OSL. 0.0 1B -B Fig 9. Max. Safe Operating Area Fig 10. Max. Drain Current vs. Case Temperature 10 a ad : pO [See => eg : : 1 ~ = 8 gs " y ; oe sea wan 110yus gs = mee 1m | i we 10m set i sr - as, tet ; PN ar - @ Nites : fe . Pag 1% =2% # al 2.7, =10C 3, Single Pulse 2 ij 0 i i Il Il 00 a @ 5 0 5 10 rr 1 V,, Drain-Source Voltage [V] T, , Case Terperahre [CC] Fig 11. Thermal Response a a 2, : n 10 enn 0 -D=0.5 a % as ep 4d r Leen _@ Notes : : . q ne 1. Z, 5q (t)=1.69 C/W Max. 4 a 2. Duty Factor, D=t, /t, :: a ot 0.05 oo: 3. ToyToPou "4,30 (t) 5 RR Imm 2 po. 02 q single pulse . : t, | . 8 . . 7a N 1072 1 jo 4 1 je 1 jd 1 10-5 10-4 10-3 10? 10-1 10 10+ t, , Square Wave Pulse Duration [sec] ee FAIRCHILD Ed SEMICONDUCTORPOWER MOSFET IRF634A Fig 12. Gate Charge Test Circuit & Waveform . Current Regulator. Ves 12V T 7 1OV = Vos Ves nt DUT L 3mA t R, R, O WAN AN Ch Current Sampling (I) | Current Sampling (Ip) arge Resistor Resistor Fig 13. Resistive Switching Test Circuit & Waveforms Ry Voy Vou Vop (0.5 rated Vp, ) Vina : a 10V seh siete Oo ton loge Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms L BVpss L Eas= 7 Ly las SO Vos - TY 2 BVpss ~ Von Vary t, to obtain os Ip BVpss | - - - - required peak I, ro Ing | - - - - 4 ) Cc = Vop Ip (t) DUT Vop Vos (t) 10V j~<_ +, | Time ee FAIRCHILD Ed SEMICONDUCTORIRF634A POWER MOSFET Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT _~| + 7 Vos L <- om Is of L OH. Driver Ves Rg 7K) Same Type tL as DUT = Vop Vos dv/dt controlled by . Rg. I, controlled by Duty Factor . D. oO Vv Gate Pulse Width i GS D BS were ( Dri ) Gate Pulse Period 10V river | Igy Body Diode Forward Current Is (DUT ) di/de RM Body Diode Reverse Current Vos (DUT ) Body Diode Recovery dv/dt Ve Vop \ t t tT Body Diode Forward Voltage Drop ee FAIRCHILD Ed SEMICONDUCTORTRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx ISOPLANAR CoolFET MICROWIRE CROSSVOLT POP E?CMOS PowerTrench FACT qs FACT Quiet Series Quiet Series FAST SuperSOT-3 FASTr SuperSOT-6 GTo SuperSOT-8 HiSeC TinyLogic DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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