IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFT80N65X2HV
Note 1. Pulse test, t 300s, duty cycle, d 2%.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max
ISVGS = 0V 80 A
ISM Repetitive, pulse Width Limited by TJM 320 A
VSD IF = IS, VGS = 0V, Note 1 1.4 V
trr 200 ns
QRM 1.7 μC
IRM 16.7 A
IF = 40A, -di/dt = 100A/μs
VR = 100V
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max
gfs VDS = 10V, ID = 0.5 • ID25, Note 1 33 55 S
RGi Gate Input Resistance 0.6
Ciss 8300 pF
Coss VGS = 0V, VDS = 25V, f = 1MHz 5010 pF
Crss 1.6 pF
Co(er) 280 pF
Co(tr) 1160 pF
td(on) 32 ns
tr 24 ns
td(off) 70 ns
tf 11 ns
Qg(on) 140 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 50 nC
Qgd 40 nC
RthJC 0.14 C/W
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 3 (External)
Effective Output Capacitance
Energy related
Time related
VGS = 0V
VDS = 0.8 • VDSS