OPTEK TECHNOLOGY INC OLE D ursasao ggog1aa 2 i Optoelectronics Division TAW Electronic Components Group Product Bulletin 6146 January 1985 TOUN-Cl parte NPN Silicon Phototransistors Types OP841W, OP842W, OP843W, OP844W, OP845w measured from the optical axis to the half power point. The base lead is bonded to enable conventional transistor biasing. Except for minor differences in collector current ranges and minimum range binning only, this saries is identical to the OPGQOW series and is mechanically and spectrally matched to the OP130W and OP231W series of infrared emitting diodes. 202 (5.19) 187 a ~ COLLECTOR 030 (0.76}so4 fg- 019 (0.48) yy me MX | 016 (0.41) 100 (2.54 or BASE DIA NOM 197 (4.75) ~A 2048 (1.22) 179 (4.55) fr .028 (0.71) 230 15.84) > 208 (5.31 jf Yn 048 11.17) 7 .036 (0.91) | 500 (12.7) fy Uy Mn >> EMITTER 45 DIMENSIONS ARE IN INCHES (MILLIMETERS). Features Absolute Maximum Ratings (Ta = 25C unless otherwise noted) Collector currants specified as minimums Collector-Base Voltage 0.2.00... ccc cece cc cect e eee n ee cee eee amen tebe tng teteeettanes 30 V Flat lensed for wide acceptance angle Collactor-Emitter Voltage... 00... cc cece eet e cece ec ee enna eee ae ene anaee ees seabeepeetnses d0V 70-18 hermatically sealed package Emitter-Base Voltage... 2... cece eee ee cence en epee eee scene ae sep ee eeean eee neees 5.0V Emitter-Colfactor Voltage ............. ec ce eeeee nes cee cceee basse becseegeteesteeeepertes 5.0V Description Continuous Collector Current 0.0... cece ececee set ee tere neee ea ere re eneaenenteeeeenen ens 50 mA The OP841W through OPB45W each consist of an Storage Tamperatura Range..........- 2.222222 eee cece ee ee eeeee eee e ees -.. 786C to +150C NPN silicon phototransistor mounted in a flat Operating Temperature Range .......... eee c cece etcetera eee eet onan eaeeeee -B5C to +125C lensed, hermetically sealed, T0-18 package. The Lead Soldering Temperature (1/16 inch [1.6 mml from case for 5 sec. with soldering ironk ......... 240C flat lens allows an acceptance half angle of 40 Power Dissipation ........c. cece seer cece cree eee rete lee ete n eee teen ee rree ee tees 260 mw Notes: (1) RMA flux is recommended. Duration can ba extended to 10 sec. max, when wave soldering. {2] Derata finearly 2.6 mWiC ahove 25C. {8} Junction temperatura maintained at 26C. (4) Light source is an unfitered tungsten bulb cparating at CT = 2870K or equivalent infiared source, Typical Performance Curves Spectral Response of 0P841W-OP845W vs. GeAlAs and GaAs Coupling Charactaristics of OP130W and OP840W 100 1.0 # Leo 08 3 = 3 3 = = = 6 Bos s = 2 8 & 40 g 04 = Ss y = S20 3 02 z 0 0 soo = 700s 800,ssisto tO 0 o6of) 6O2 Oi X WAVELENGTH Nenometers DISTANCE BETWEEN LENS TIPS inches Test Conditions (LEO: Ta = Ty = 25%C, ip = 100 mA, OC = 0.1%, PW = 100 ps Puak Wavelength ~ dz: (A} XSTA ~ 850 & 30 nm, (8) LED GaAtAs 875 2 20 nn, (Ch LEG GaAs - 930 2 15 nm Optoelectronics Division, TAW Electronic Components Group, 1215 W. Crosby Ad., Carrollton, TX 76006 (214) 923-2200, TLX 6716032 or 215849OPTEK TECHNOLOGY INC ObE D Bp e7sasso oo00L89 4 i Types OP841W, OP842W, OPB43W, OPB44W, OPE4EW ST Yt+lo) Electrical Characteristics (Ta = 25C unless otherwise nated) ast OPad2w | 1. Voce = 6.0 V, Eg = 5.0 mWicm2t OPasaw | 1. Voce = 6.0 V, Ey ~ 5.0 mWjom24 OPad4w | 2: Voge = 5.0 , Ey = 5.0 mWicm2 OPB4EW | 2: = 5.0 V, Ey = 5.0 mWicm2tt Fall Time A = 1000, See Test Circuit Typical Performance Curves Collector Dark Curront Normalized Collector Current Collector Current vs. Ambient Temperatura vs, Ambient Temperatura vs. frradiance 100 20 7 Vee-5 4 Y Leg} ment Vee - 5.0 vag L z LED = OP 2806 @ d - 875 nm & F-UGHT SOURCE IS 5 7 S ag LPW- 100us de - 0.1% | 4 AT 2870% & ba "J MEASURED 25 as INTO PULSE, 1g s WA, s HORMALIZED AT Ta = 25C & wi i i 2 2, = 3 3 =: Bi 3 So 3 E3 5 Ol g a y = a 8 z 52 1 pal 2 S08 1 2 7 I 2, 2s 2 Y 0 Q 0 20 40 60 80 100 120 140 -50 -25 G 25 80 78 100 125 oO 4 8 12 8 a 2% Ta AMBIENT TEMPERATURE C Ta AMBIENT TEMPERATURE C Eg IRRADIANCE miifem? Risa and Fal! Time Normalized Collector Current Switching Time vs. Load Resistance vs. Angular Displacement Test Circuit 70 Vee =5 Vat = 14 . FREQUENCY = 100 Hz 5 r r PULSE WIDTH t ms = Veo -5 w S0 | Leo = 0p290C 2 = d= 875 1m g * S Z = 30 a Your aw nN ight source is @ . ri 5 opiate, $m.- 100 = + 875 nm tise tine of fess than = 3 Fe 100 mA 800 s9. LED ovtpat s = cE - aprnd antl ig = 10 LENS TD LENS ard ig 0.8 a. =67 0 a = 2,000 6,000 10,000 | ) Ry LOAD RESISTANCE ~ Ohms 6 ANGULAR DISPLACEMENT Deg. TRW reserves the right to make changes at any time in order to improve design end to supply the best product possible, TENNEY Optoalectronics Division, TRW Electronic Components Group, 1216 W. Crosby Rd., Carrollton, 1X 75006 (214) 323-2200, TLX 6716032 or 216849 TRW Inc. 1886, 1982. TRW is the name and mark of TAW Inc. Printed ia U.S.A.