ZXTDBM832 MPPSTM Miniature Package Power Solutions DUAL 20V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=20V; RSAT = 47m ; IC= 4.5A DESCRIPTION Packaged in the innovative 3mm x 2mm MLP (Micro Leaded Package) outline, these new 4th generation low saturation dual transistors offer extremely low on state losses making them ideal for use in DC-DC circuits and various driving and power management functions. Additionally users gain several other key benefits: Performance capability equivalent to much larger packges Improved circuit efficiency & power levels 3mm x 2mm (Dual die) MLP PCB area and device placement savings Lower package height (nom 0.9mm) C1 C2 Reduced component count FEATURES * Low Equivalent On Resistance B1 B2 * Extremely Low Saturation Voltage (150mV @1A) * hFE characterised up to 6A * IC=4.5A Continuous Collector Current E2 * 3mm x 2mm MLP E1 APPLICATIONS * DC - DC Converters * Charging circuits * Power switches PINOUT * Motor control ORDERING INFORMATION DEVICE REEL TAPE WIDTH QUANTITY PER REEL ZXTDCM832TA 7 8mm 3000 ZXTDCM832TC 13 8mm 10000 DEVICE MARKING 3mm x 2mm MLP underside view DBB ISSUE 1 - JUNE 2002 1 ZXTDBM832 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL LIMIT UNIT Collector-Base Voltage V CBO 40 V Collector-Emitter Voltage V CEO 20 V Emitter-Base Voltage V EBO 7.5 V Peak Pulse Current I CM 12 A Continuous Collector Current (a)(f) IC 4.5 A Continuous Collector Current (b)(f) IC 5 A Base Current IB 1000 mA Power Dissipation at TA=25C (a)(f) Linear Derating Factor PD 1.5 12 W mW/C Power Dissipation at TA=25C (b)(f) Linear Derating Factor PD 2.45 19.6 W mW/C Power Dissipation at TA=25C (c)(f) Linear Derating Factor PD 1 8 W mW/C Power Dissipation at TA=25C (d)(f) Linear Derating Factor PD 1.13 9 W mW/C Power Dissipation at TA=25C (d)(g) Linear Derating Factor PD 1.7 13.6 W mW/C Power Dissipation at TA=25C (e)(g) Linear Derating Factor PD 3 24 W mW/C Operating and Storage Temperature Range T j :T stg -55 to +150 C THERMAL RESISTANCE PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a)(f) R JA 83.3 C/W Junction to Ambient (b)(f) R JA 51 C/W Junction to Ambient (c)(f) R JA 125 C/W Junction to Ambient (d)(f) R JA 111 C/W Junction to Ambient (d)(g) R JA 73.5 C/W Junction to Ambient (e)(g) R JA 41.7 C/W Notes (a) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. (b) Measured at t<5 secs for a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. (c) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with minimal lead connections only. (d) For a dual device surface mounted on 10 sq cm single sided 1oz copper on FR4 PCB, in still air conditions with all exposed pads attached attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. (e) For a dual device surface mounted on 85 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. (f) For a dual device with one active die. (g) For dual device with 2 active die running at equal power. (h) Repetitive rating - pulse width limited by max junction temperature. Refer to Transient Thermal Impedance graph. (i) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base of the device as shown in the package dimensions data. The thermal resistance for a dual device mounted on 1.5mm thick FR4 board using minimum copper 1 oz weight, 1mm wide tracks and one half of the device active is Rth = 250C/W giving a power rating of Ptot = 500mW. ISSUE 1 - JUNE 2002 2 ZXTDBM832 TYPICAL CHARACTERISTICS 1 DC 1s 100ms 0.1 10ms 1ms Note (a)(f) 0.01 100us Single Pulse, Tamb=25C 0.1 Thermal Resistance (C/W) Max Power Dissipation (W) VCE(SAT) Limited 1 10 2.5 2oz Cu Note (a)(f) 2.0 1oz Cu Note (d)(g) 1.5 1.0 1oz Cu Note (d)(f) 0.5 0.0 0 25 50 75 100 125 Temperature (C) Safe Operating Area Derating Curve Note (a)(f) 80 60 D=0.5 40 Single Pulse D=0.2 20 D=0.05 D=0.1 0 100 1m 10m 100m 1 10 100 1k Pulse Width (s) 2oz copper Note (g) Tamb=25C Continuous 2.5 2oz copper Note (f) 2.0 1.5 1.0 1oz copper Note (f) 0.5 0.0 0.1 1 1oz copper Note (f) 1oz copper Note (g) 2oz copper Note (f) 2oz copper Note (g) 1 10 100 Thermal Resistance v Board Area 3.5 3.0 Tj max=150C 225 200 175 150 125 100 75 50 25 0 0.1 150 Board Cu Area (sqcm) Transient Thermal Impedance PD Dissipation (W) Tamb=25C 2oz Cu Note (e)(g) 3.0 VCE Collector-Emitter Voltage (V) Thermal Resistance (C/W) IC Collector Current (A) 3.5 10 1oz copper Note (g) 10 100 Board Cu Area (sqcm) Power Dissipation v Board Area ISSUE 1 - JUNE 2002 3 ZXTDBM832 ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. Collector-Base Breakdown Voltage V (BR)CBO 40 Collector-Emitter Breakdown Voltage V (BR)CEO Emitter-Base Breakdown Voltage V (BR)EBO MAX. UNIT CONDITIONS. 100 V I C =100A 20 27 V I C =10mA* 7.5 8.2 V I E =100A Collector Cut-Off Current I CBO 25 nA V CB =32V Emitter Cut-Off Current I EBO 25 nA V EB =6V Collector Emitter Cut-Off Current I CES 25 nA V CES =16V Collector-Emitter Saturation Voltage V CE(sat) 8 15 mV I C =0.1A, I B =10mA* I C =1A, I B =10mA* 90 150 mV 115 135 mV 190 250 mV I C =2A, I B =50mA* I C =3A, I B =100mA* 210 270 mV I C =4.5A, I B =125mA* Base-Emitter Saturation Voltage V BE(sat) 0.98 1.05 V I C =4.5A, I B =125mA* Base-Emitter Turn-On Voltage V BE(on) 0.88 0.95 V Static Forward Current Transfer Ratio h FE 200 300 200 100 400 450 360 180 Transition Frequency fT 100 140 I C =4.5A, V CE =2V* I C =10mA, V CE =2V* I C =0.2A, V CE =2V* I C =2A, V CE =2V* I C =6A, V CE =2V* MHz 30 I C =50mA, V CE =10V f=100MHz Output Capacitance C obo 23 pF V CB =10V, f=1MHz Turn-On Time t (on) 170 ns Turn-Off Time t (off) 400 ns V CC =10V, I C =3A I B1 =I B2 =10mA *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% ISSUE 1 - JUNE 2002 4 ZXTDBM832 TYPICAL CHARACTERISTICS 0.25 IC/IB=50 Tamb=25C 0.20 100C VCE(SAT) (V) VCE(SAT) (V) 100m IC/IB=100 10m IC/IB=50 10m 100m 25C 0.10 -55C 0.05 IC/IB=10 1m 1m 0.15 1 0.00 1m 10 IC Collector Current (A) 10m 100m 1 10 1 10 IC Collector Current (A) VCE(SAT) v IC VCE(SAT) v IC 630 1.0 100C 0.8 360 25C 270 -55C 0.4 180 0.2 90 10m 100m 1 10 0 hFE v IC VBE(ON) (V) 0.8 -55C 0.6 25C 1m 100C 10m 100m 1 IC Collector Current (A) -55C 0.6 25C 100C 0.4 10m 100m IC Collector Current (A) VBE(SAT) v IC VCE=2V 0.4 0.8 1m IC Collector Current (A) 1.0 IC/IB=50 450 0.6 0.0 1m 1.0 540 VBE(SAT) (V) Normalised Gain 1.2 Typical Gain (hFE) VCE=2V 10 VBE(ON) v IC ISSUE 1 - JUNE 2002 5 ZXTDBM832 MLP832 PACKAGE OUTLINE (3mm x 2mm Micro Leaded Package) CONTROLLING DIMENSIONS IN MILLIMETRES APPROX. CONVERTED DIMENSIONS IN INCHES MLP832 PACKAGE DIMENSIONS MILLIMETRES DIM INCHES MILLIMETRES DIM MAX. MIN. MAX. A 0.80 1.00 0.031 0.039 A1 0.00 0.05 0.00 0.002 E A2 0.65 0.75 0.0255 0.0295 E2 0.43 0.63 0.017 A3 0.15 0.25 0.006 0.0098 E4 0.16 0.36 0.006 0.014 b 0.24 0.34 0.009 0.013 L 0.20 0.45 0.0078 0.0157 b1 0.17 0.30 0.0066 0.0118 L2 0.125 0.00 0.005 D 3.00 BSC e 0.118 BSC D2 0.82 1.02 0.032 0.040 D3 1.01 1.21 0.0397 0.0476 MIN. r MAX. INCHES MIN. 0.65 REF 2.00 BSC 0.075 BSC 0 12 MIN. MAX. 0.0256 BSC 0.0787 BSC 0.0249 0.0029 BSC 0 12 (c) Zetex plc 2002 Americas Asia Pacific Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY11788 Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com USA Telephone: (631) 360 2222 Fax: (631) 360 8222 usa.sales@zetex.com Zetex (Asia) Ltd 3701-04 Metroplaza, Tower 1 Hing Fong Road Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Europe Zetex plc Fields New Road Chadderton Oldham, OL9 8NP United Kingdom Telephone (44) 161 622 4422 Fax: (44) 161 622 4420 uksales@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com ISSUE 1 - JUNE 2002 6