SUMMARY
VCEO=20V; RSAT = 47m ;I
C= 4.5A
DESCRIPTION
Packaged in the innovative 3mm x 2mm MLP (Micro Leaded Package) outline,
these new 4th generation low saturation dual transistors offer extremely low on
state losses making them ideal for use in DC-DC circuits and various driving
and power management functions.
Additionally users gain several other key benefits:
Performance capability equivalent to much larger packges
Improved circuit efficiency & power levels
PCB area and device placement savings
Lower package height (nom 0.9mm)
Reduced component count
FEATURES
•Low Equivalent On Resistance
•Extremely Low Saturation Voltage (150mV @1A)
•hFE characterised up to 6A
•IC=4.5A Continuous Collector Current
•3mm x 2mm MLP
APPLICATIONS
•DC - DC Converters
•Charging circuits
•Power switches
•Motor control
DEVICE MARKING
DBB
ZXTDBM832
ISSUE 1 - JUNE 2002
1
MPPS™ Miniature Package Power Solutions
DUAL 20V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR
B2
C2
E2
B1
C1
E1
3mm x 2mm MLP
underside view
PINOUT
DEVICE REEL TAPE
WIDTH QUANTITY
PER REEL
ZXTDCM832TA 7ⴕⴕ 8mm 3000
ZXTDCM832TC 13ⴕⴕ8mm 10000
ORDERING INFORMATION
3mm x 2mm (Dual die) MLP
ZXTDBM832
ISSUE 1 - JUNE 2002
2
PARAMETER SYMBOL VALUE UNIT
Junction to Ambient (a)(f) RθJA 83.3 °C/W
Junction to Ambient (b)(f) RθJA 51 °C/W
Junction to Ambient (c)(f) RθJA 125 °C/W
Junction to Ambient (d)(f) RθJA 111 °C/W
Junction to Ambient (d)(g) RθJA 73.5 °C/W
Junction to Ambient (e)(g) RθJA 41.7 °C/W
THERMAL RESISTANCE
Notes
(a) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The
copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(b) Measured at t<5 secs for a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed
pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(c) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with minimal lead connections only.
(d) For a dual device surface mounted on 10 sq cm single sided 1oz copper on FR4 PCB, in still air conditions with all exposed pads attached
attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(e) For a dual device surface mounted on 85 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached
attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(f) For a dual device with one active die.
(g) For dual device with 2 active die running at equal power.
(h) Repetitive rating - pulse width limited by max junction temperature. Refer to Transient Thermal Impedance graph.
(i) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base of the device as shown in the
package dimensions data. The thermal resistance for a dual device mounted on 1.5mm thick FR4 board using minimum copper 1 oz weight, 1mm
wide tracks and one half of the device active is Rth = 250°C/W giving a power rating of Ptot = 500mW.
PARAMETER SYMBOL LIMIT UNIT
Collector-Base Voltage VCBO 40 V
Collector-Emitter Voltage VCEO 20 V
Emitter-Base Voltage VEBO 7.5 V
Peak Pulse Current ICM 12 A
Continuous Collector Current (a)(f) IC4.5 A
Continuous Collector Current (b)(f) IC5A
Base Current IB1000 mA
Power Dissipation at TA=25°C (a)(f)
Linear Derating Factor
PD1.5
12 W
mW/°C
Power Dissipation at TA=25°C (b)(f)
Linear Derating Factor
PD2.45
19.6 W
mW/°C
Power Dissipation at TA=25°C (c)(f)
Linear Derating Factor
PD1
8W
mW/°C
Power Dissipation at TA=25°C (d)(f)
Linear Derating Factor
PD1.13
9W
mW/°C
Power Dissipation at TA=25°C (d)(g)
Linear Derating Factor
PD1.7
13.6 W
mW/°C
Power Dissipation at TA=25°C (e)(g)
Linear Derating Factor
PD3
24 W
mW/°C
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ABSOLUTE MAXIMUM RATINGS.
ZXTDBM832
ISSUE 1 - JUNE 2002
3
0.1 1 10
0.01
0.1
1
10
0 25 50 75 100 125 150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
100µ 1m 10m 100m 1 10 100 1k
0
20
40
60
80
0.1 1 10 100
0
25
50
75
100
125
150
175
200
225
0.1 1 10 100
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Note (a)(f) 100us
100ms
1s
VCE(SAT)
Limited
1ms
Safe Operating Area
Single Pulse, Tamb=25°C
DC
10ms
ICCollector Current (A)
VCE Collector-Emitter Voltage (V)
1oz Cu
Note (d)(f)
1oz Cu
Note (d)(g)
2oz Cu
Note (a)(f)
2oz Cu
Note (e)(g)
Derating Curve
Tamb=25°C
Max Power Dissipation (W)
Temperature (°C)
Note (a)(f)
D=0.2
D=0.5
D=0.1
Transient Thermal Impedance
Single Pulse
D=0.05
Thermal Resistance (°C/W)
Pulse Width (s)
1oz copper
Note (g)
1oz copper
Note (f)
2oz copper
Note (f) 2oz copper
Note (g)
Thermal Resistance v Board Area
Thermal Resistance (°C/W)
BoardCuArea(sqcm)
1oz copper
Note (g)
2oz copper
Note (g)
1oz copper
Note (f)
2oz copper
Note (f)
Power Dissipation v Board Area
Tamb=25°C
Tjmax
=150°C
Continuous
PDDissipation (W)
BoardCuArea(sqcm)
TYPICAL CHARACTERISTICS
ZXTDBM832
ISSUE 1 - JUNE 2002
4
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage V(BR)CBO 40 100 V IC=100␮A
Collector-Emitter Breakdown
Voltage V(BR)CEO 20 27 V IC=10mA*
Emitter-Base Breakdown Voltage V(BR)EBO 7.5 8.2 V IE=100␮A
Collector Cut-Off Current ICBO 25 nA VCB=32V
Emitter Cut-Off Current IEBO 25 nA VEB=6V
Collector Emitter Cut-Off Current ICES 25 nA VCES=16V
Collector-Emitter Saturation
Voltage VCE(sat) 8
90
115
190
210
15
150
135
250
270
mV
mV
mV
mV
mV
IC=0.1A, IB=10mA*
IC=1A, IB=10mA*
IC=2A, IB=50mA*
IC=3A, IB=100mA*
IC=4.5A, IB=125mA*
Base-Emitter Saturation Voltage VBE(sat) 0.98 1.05 V IC=4.5A, IB=125mA*
Base-Emitter Turn-On Voltage VBE(on) 0.88 0.95 V IC=4.5A, VCE=2V*
Static Forward Current Transfer
Ratio hFE 200
300
200
100
400
450
360
180
IC=10mA, VCE=2V*
IC=0.2A, VCE=2V*
IC=2A, VCE=2V*
IC=6A, VCE=2V*
Transition Frequency fT100 140 MHz IC=50mA, VCE=10V
f=100MHz
Output Capacitance Cobo 23 30 pF VCB=10V, f=1MHz
Turn-On Time t(on) 170 ns VCC=10V, IC=3A
IB1=IB2=10mA
Turn-Off Time t(off) 400 ns
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
ZXTDBM832
ISSUE 1 - JUNE 2002
5
1m 10m 100m 1 10
1m
10m
100m
1m 10m 100m 1 10
0.00
0.05
0.10
0.15
0.20
0.25
1m 10m 100m 1 10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1m 10m 100m 1 10
0.4
0.6
0.8
1.0
1m 10m 100m 1 10
0.4
0.6
0.8
1.0
0
90
180
270
360
450
540
630
VCE(SAT) vI
C
Tamb=25°C
IC/IB=100
IC/IB=50
IC/IB=10
VCE(SAT) (V)
ICCollector Current (A)
VBE(SAT) vI
C
IC/IB=50
100°C
25°C
-55°C
VCE(SAT) (V)
ICCollector Current (A)
hFE vI
C
VCE=2V
-55°C
25°C
100°C
Normalised Gain
ICCollector Current (A)
25°C
VCE(SAT) vI
C
IC/IB=50
100°C
-55°C
VBE(SAT) (V)
ICCollector Current (A)
VBE(ON) vI
C
VCE=2V
100°C
25°C
-55°C
VBE(ON) (V)
ICCollector Current (A)
Typical Gain (hFE)
TYPICAL CHARACTERISTICS
ZXTDBM832
ISSUE 1 - JUNE 2002
6
Europe
Zetex plc
Fields New Road
Chadderton
Oldham, OL9 8NP
United Kingdom
Telephone (44) 161 622 4422
Fax: (44) 161 622 4420
uksales@zetex.com
Zetex GmbH
Streitfeldstraße 19
D-81673 München
Germany
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
europe.sales@zetex.com
Americas
Zetex Inc
700 Veterans Memorial Hwy
Hauppauge, NY11788
USA
Telephone: (631) 360 2222
Fax: (631) 360 8222
usa.sales@zetex.com
Asia Pacific
Zetex (Asia) Ltd
3701-04 Metroplaza, Tower 1
Hing Fong Road
Kwai Fong
Hong Kong
Telephone: (852) 26100 611
Fax: (852) 24250 494
asia.sales@zetex.com
These offices are supported by agents and distributors in major countries world-wide.
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced
for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company
reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
For the latest product information, log on to www.zetex.com
© Zetex plc 2002
CONTROLLING DIMENSIONS IN MILLIMETRES
APPROX. CONVERTED DIMENSIONS IN INCHES
MLP832 PACKAGE OUTLINE (3mm x 2mm Micro Leaded Package)
DIM MILLIMETRES INCHES DIM MILLIMETRES INCHES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
A 0.80 1.00 0.031 0.039 e 0.65 REF 0.0256 BSC
A1 0.00 0.05 0.00 0.002 E 2.00 BSC 0.0787 BSC
A2 0.65 0.75 0.0255 0.0295 E2 0.43 0.63 0.017 0.0249
A3 0.15 0.25 0.006 0.0098 E4 0.16 0.36 0.006 0.014
b 0.24 0.34 0.009 0.013 L 0.20 0.45 0.0078 0.0157
b1 0.17 0.30 0.0066 0.0118 L2 0.125 0.00 0.005
D 3.00 BSC 0.118 BSC r 0.075 BSC 0.0029 BSC
D2 0.82 1.02 0.032 0.040 ⍜0⬚12⬚0⬚12⬚
D3 1.01 1.21 0.0397 0.0476
MLP832 PACKAGE DIMENSIONS