Features
·Extremely rugged for harsh operating environments
·Over-temperature protection
·Over-current protection
·Active drain-to-source clamp
·ESD protection
·Lead compatible with standard Power MOSFET
·Low operating input current
·Monolithic construction
IRSF3011 (NOTE: For new designs, we
recommend IR’s new products IPS021 and IPS021L)
FULLY PRO TECTED POWER MOSFET SWITCH
Data Sheet No.PD 60133-H
Applications
·Solenoid Driver
·DC Motor Driver
Description
The IRSF3011 is a three-terminal monolithic Smart Power
MOSFET with built-in short circuit, over-temperature, ESD
and over-voltage protections.
The on-chip protection circuit latches off the Power MOSFET
in case the drain current exceeds 7A (typical) or the junction
temperature exceeds 165°C (typical) and keeps it off until the
input is driven low. The drain to source voltage is actively
clamped at 55V (typical), prior to the avalanche of Power
MOSFET, thus improving its performance during turn-off with
inductive loads.
The input current requirements are very low (300µA) which
makes the IRSF3011 compatible with most existing designs
based on standard Power MOSFETs.
Available Packages
3 Lead
TO220AB
3 Lead
SOT223
Block Diagram
INPUT
DRAIN
SOURCE
Vds(clamp) 50V
Rds(on) 200mW
Ids(sd) 7A
Tj(sd) 165oC
EAS 200mJ
Product Summary
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IRSF3011
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Symbol Parameter Min. Typ. Max. Units Test Conditions
Vds,clamp Drain to source clamp voltage 50 54 — V Ids = 10mA
—5662 I
ds = 6A, tp = 700 ms
Rds(on) Drain to source on resistance — 155 200 Vin = 5V, I ds = 2A
— 200 — mWVin = 4V, Ids = 2A
— 115 — Vin = 10V, Ids = 2A
Idss Drain to source leakage current — — 10 Vds = 12V, Vin = 0V
— — 100 mAV
ds = 50V, Vin = 0V
— 10 250
Vth Input threshold voltage 1.5 2.0 2.5 V Vds = 5V, Ids = 10mA
Ii,on Input supply current (normal operation) — 0.25 0.6 Vin = 5V
— 0.35 0.85 mA Vin = 10V
Ii, off Input supply current (protection mode) — 0. 5 1.0 Vin = 5V
— 0.6 1.2 Vin = 10V
Vin, clamp Input clamp voltage 10 10.8 — VIin = 10mA
Vsd Body-drain diode forward drop➂— 1.2 1.5 Ids = -9A, Rin = 1kW
Static Electrical Characteristics
(TC = 25oC unless otherwise specified.)
Vds=40V,Vin=0V,Tc=150oC
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur.
(TC = 25oC unless otherwise specified.)
Symbol Parameter Min. Max. Units Test Conditions
Vds, max Continuous drain to source voltage — 50 V
Vin, max Continuous input voltage -0.3 10
Ids Continuous drain current — self limited A
PdPower dissipation — 30 Tc £ 25oC, T O220
—3 T
c
£ 25oC, SOT223
EAS Unclamped single pulse inductive energyÁ— 200 mJ
Vesd1 Electrostatic discharge voltage (Human Body Model) — 4000 V100pF, 1.5k W
Vesd2 Electrostatic discharge voltage (Machine Model) — 1000 200pF, 0W
TJop Operating junction temperature range -55
150
TStg Storage temperature range -55 150 oC
TLLead temperature (soldering, 10 seconds) — 300
W
Symbol Parameter Min. Typ. Max. Units Test Conditions
Rthjc Junction to case — — 4 TO-220AB
Rthja Junction to ambient — — 60
Rthjc Junction to case — — 40 SOT-223
Rthja Junction to PCB ➀——60
Thermal Characteristics
oC/W
IRSF3011
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NOTES:
①
When mounted on a 1" square PCB (FR-4 or G10 material). For recommended footprint and soldering techniques,
refer to International Rectifier Application Note AN-994.
② EAS is tested with a constant current source of 6A applied for 700mS with Vin = 0V and starting Tj = 25oC.
③ Input current must be limited to less than 5mA with a 1kW resistor in series with the input when the Body-Drain Diode
is forward biased.
Switching ElectricalCharacteristics
(VCC = 14V, resistive load (RL) = 5W, TC= 25°C.) Please refer to figure 3 for switching time definitions.
Symbol Parameter Min. Typ. Max. Units Test Conditions
tdon Turn-on delay time — 160 250 Vin = 5V
—90— V
in = 10V
trRise time — 650 1200 Vin = 5V
— 250 — nS Vin = 10V
tdoff Turn-off delay time — 250 350 Vin = 5V
— 300 — Vin = 10V
tfFall time — 180 350 Vin = 5V
— 170 — Vin = 10V
Symbol Parameter Min. Typ. Max. Units Test Conditions
Ids(sd) Over-current shutdown threshold 5 7 10 A Vin = 5V
Tj(sd) Over temperature shutdown threshold 155 165 — oCV
in = 5V, Ids = 2A
Vprotect Min. input voltage for over-temp function — 3 — V
tIresp Over current response time — 4 — mSSee Figure 4 for definition
tIblank Over current blanking time — 4 — See Figure 4 for definition
Ipeak Peak short circuit current — 16 — A See Figure 4 for definition
Vreset Protection reset voltage — 1.3 — V
treset Protection reset time — 8 — mSSee Figure 5 for definition
tTresp Over-temperature response time — 12 — See Figure 6 for definition
Protection Characteristics
(TC= 25oC unless otherwise specified.)
Symbol Parameter Min. Typ. Max. Units T est Conditions
Vds,clamp Drain-to-source clamp voltage T.C. — 18.2 — Ids = 10mA
Vth Input threshold voltage T.C. — -2.7 — mV/ oCV
ds = 5V, Ids = 10mA
Vin,clamp Input clamp voltage T.C. — 7.0 — Iin = 10mA
Ids(sd) Over-current shutdown threshold T.C. — -9.8 — mA/oCV
in = 5V
Temperature Coefficients of Electrical Characteristics
(Please see Figures 7 through 18 for more data on thermal characteristics of other electrical parameters.
IRSF3011
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IRGB 01-3026 01
Case Outline 3 Lead - TO220
NOTES:
2
2X
Lead Assignments
Part Number
(2) D
1 2 3
In D S
3 Lead - SOT223
IRSF3011L
1 2 3
In D S
3 Lead - TO220
2 (D)
IRSF3011
IRSF3011
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IRGB X01-3032 00
Case Outline 3 Lead - SOT-223
IRSF3011
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Tape & Reel - SOT223
01-0028 05 / 01-0008 02
Figure 3 Definition of Switching Times
50%
90%
10%
Vds
Vin
t
t
tdon trtdoff tf
Figure 4 Definition of I peak, tIblank, tIresp
Ids
Vin
t
t
Ipeak
tIblank tIresp
Short applied
before turn-on Short applied
after turn-on
5V
Vcc = 14V= 0
RL
IRSF3011
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Fig. 4 - On R esistance vs. Temperature
Temperature (°C)
Rds(on) (mOhm)
50
100
150
200
250
300
-50-250 255075100125150
Vin = 10V
Ids = 4A
Vin = 5V
Figure 7 On Resistance vs. Drain-to-Source Current
Ids (A)
Rds(on) (mOhm)
100
125
150
175
200
225
250
12345678
Vin = 4V
Vin = 5V
Vin = 8V
Vin = 10V
T = 25°C
Figure 8 On Resistance vs. Temperature
Figure 6 Definition of tTresp
Figure 5 Definition of treset
Ids
Vin
t
t
5V
Vcc = 14V= 1 mHRL
Ids(sd)
t < reset
tt > reset
tIds
Vin
t
t
tTresp
5V
Vcc = 14V= 10
RLΩ+ 5°C
TJ= TJSD
IRSF3011
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Figure 11 Input Current vs. Input Voltage Figure 12 Input Current vs.Temperature
Input Voltage (Volts)
Input Current (mA)
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
01234567891011
Iin,off
T=25°C
Temperature (°C)
Input Current (mA)
0
0.1
0.2
0.3
0.4
0.5
0.6
-50 -25 0 25 50 75 100 125 150
Iin,on
Iin,off
Vin = 5V
Figure 9 Over-Current Shutdown Threshold
vs. Input Voltage Figure 10 Over-Current Shutdown Threshold
vs.Temperature
Input Voltage (Volts)
Shut Down Current (A)
6
6.5
7
7.5
8
45678910
T = 25°C
Temperatu r e ( °C )
Shut Down Current (A)
4
5
6
7
8
9
-50 -25 0 25 50 75 100 125 150
Vin = 5V
IRSF3011
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Figure 13 Turn-On Characteristics vs. Input Voltage Figure 14 Tur n-On Characteristics vs. Temperature
Input Voltage (Volts)
Rise Time, On Delay (µS)
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
34567891011
On Delay
Rise Time
T = 25°C
Temperature (°C)
Rise Time, On Delay (µS)
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
-50 -25 0 25 50 75 100 125 150
On Delay
Rise Time
Vin = 5V
Figure 16 Tur n-Off Character istics vs. Temperature
Temperature (°C)
Fall Time, Off Delay (µS)
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
-50 -25 0 25 50 75 100 125 150
Off Delay
Fall Time
Vin = 5V
Input Voltage (Volts)
Fall Time, Off Delay (µS)
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
34567891011
Off Delay
Fall Time
T = 25°C
)
Figure 15 Turn-Off Characteristics
vs. Input Voltage
IRSF3011
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Introduction
Protected monolithic POWER MOSFETs offer simple,
cost effective solutions in applications where ex-
treme operating conditions can occur. The margin
between the operating conditions and the absolute
maximum values can be narrowed, resulting in
better utilization of the device and lower cost. ESD
protection also reduces the off-circuit failures during
handling and assembly.
General Description
The IRSF3011 is a fully protected monolithic N-
channel logic level POWER MOSFET with 200mW
(max) on-resistance. The built-in protections include
over-current, over-temperature, ESD and over-volt-
age.
The over-current and over-temperature protections
make the IRSF3011 / IRSF3012 indestructible under
any load conditions in switching or in linear applica-
tions. The built-in ESD protection minimizes the risk
of ESD damage when the device is off-circuit. The
IRSF3011 / IRSF3012 is fully characterized for
avalanche operation and can be used for fast de-
energization of inductive loads.
The TO-220 packaged IRSF3011 / IRSF3012 offers
an ea sy upgrade with direct pin-to-pin replacement
from non-protected devices.
Block Diagram
As illustrated in figure A1, a zener diode between the
input and the source provides the ESD protection for
the input and also limits the voltage applied to the
input to 10V.
The R-S flip-flop memorizes the occurrence of an
error condition and controls the Q2 and Q3 switches.
The flip-flop can be cleared by holding the input low
for the specified minimum duration.
COMP1 and COMP2 comparators are used to com-
pare the over-current and over-temperature signals
with the built-in reference. Either comparator can
reset the fault flip-flop and turn Q1 off. During fault
condition, Q2 disconnects the gate of Q1 from the
input, and Q3 shorts the gate and source of Q1,
resulting in rapid turn-off of Q1. The zener diode
between the gate and drain of Q1 turns Q1 on when
the drain to source voltage exceeds 55V.
Application Information
Figure 17 Source-Drain Diode Forward Voltage Figure 18 Unclamped Single Pulse Inductive Energy to
Failure vs. Star ting Junction Temperature
Source to Drain Voltage (Volts)
Reverse Drain Current (A)
1
10
0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
T = 25°C
T = 150°C
Starting Junction Temperature (°C)
Single Pulse Energy to Failure (mJ)
0
250
500
750
1000
1250
1500
1750
2000
0 255075100125150
Ids = 4A
Vdd=25V
IRSF3011
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Figure A1. Block Diagram
Figure A2. Waveforms switching clamped inductive
load using 5V input voltage
The turn-on speed is limited by the channel resistance
of Q2 and the gate charge requirements of Q1. The
typical switching waveforms at 5V input voltage are
shown in Figure A2. Using higher input voltage will
improve the turn-on time but it will not affect the turn-
off switching speed.
Input voltage 5V/div.
Drain Current: 1A/div.
Drain voltage 5V/div.
Time: 1msV/div.
Switching Characteristics
In the IRSF3011, the control logic and the protection
circuits are powered from the input pin. When positive
voltage appears at the input pin, the R-S flip-flop turns
Q2 on and connects the gate of the main device to the
input.
Figure A3. Switching waveforms with 7V Input
voltage
Input voltage 5V/div.
Drain voltage 5V/div.
Drain Current: 1A/div.
Time: 1msV/div.
The typical waveforms at 7V input voltage are shown
in Figure A3. In typical switching applications (below
60kHz) the difference in switching losses between
the IRSF3011 / IRSF3012 and the same size standard
MOSFET is negligible.
Over-Current Protection
When the drain current exceeds the preset limit, the
protection circuit resets the internal flip-flop and turns
Q1 off. Normal operation can be restored by holding
the input voltage below the specified threshold level
(approx. 1.3V) for the specified minimum treset time.
The typical waveforms at over-current shut-down are
shown in Figure A4. After turn-on, the current in the
inductor at the drain starts ramping up. At about 7A ,
the over-current protection shuts down the device.
Over-Temperature Protection
Figure A5 illustrates the operation of the over-tem-
perature protection. The IRSF3011 / IRSF3012
switches a 2W resistive load to a 10V power supply.
When the thermal balance is established, the junc-
tion temperature is limited on a pulse-by-pulse basis.
IRSF3011
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Over-Voltage Protection
When the drain-to-source voltage exceeds 55V, the zener diode between gate and drain turns the IRSF3011
/ IRSF3012 on before the breakdown voltage of the drain-source diode is reached. This greatly enhances the
energy the device can safely withstand during inductive load turn-offs compared to avalanche breakdown. Thus
the device can be used for fast de-energization of inductive loads. The absorbed energy is limited only by
the maximum junction temperature.
Figure A4. Waveforms at over-current shut-down
Time: 10msV/div.
Drain Current: 2A/div.
Input voltage 5V/div.
Drain voltage 5V/div.
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http://www.irf.com/ Data and specifications subject to change without notice. 9/98
Input voltage 10V/div.
Drain voltage 5V/div.
Drain Current: 2A/div.
Time: 10msV/div.
Figure A5. Over-temperature shut-down
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/