DSA90C200HR Schottky Diode Gen VRRM = 200 V I FAV = 2x VF = 45 A 0.79 V High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode Part number DSA90C200HR Backside: isolated 1 2 3 Features / Advantages: Applications: Package: ISO247 Very low Vf Extremely low switching losses Low Irm values Improved thermal behaviour High reliability circuit operation Low voltage peaks for reduced protection circuits Low noise switching Rectifiers in switch mode power supplies (SMPS) Free wheeling diode in low voltage converters Isolation Voltage: 3600 V~ Industry standard outline RoHS compliant Epoxy meets UL 94V-0 Soldering pins for PCB mounting Backside: DCB ceramic Reduced weight Advanced power cycling IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130909b DSA90C200HR Ratings Schottky Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25C max. 200 Unit V VRRM max. repetitive reverse blocking voltage TVJ = 25C 200 V IR reverse current, drain current VR = 200 V TVJ = 25C 2 mA VR = 200 V TVJ = 125C 5 mA TVJ = 25C 0.91 V 1.10 V 0.79 V VF IF = forward voltage drop I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case min. 45 A IF = 90 A IF = 45 A IF = 90 A TVJ = 125 C TC = 145C rectangular 1.03 V T VJ = 175 C 45 A TVJ = 175 C 0.49 V d = 0.5 for power loss calculation only R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45C CJ junction capacitance VR = TVJ = 25C IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved typ. 5.5 m 0.7 K/W K/W 0.25 TC = 25C 24 V f = 1 MHz 215 600 394 Data according to IEC 60747and per semiconductor unless otherwise specified W A pF 20130909b DSA90C200HR Package Ratings ISO247 Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 typ. max. 70 Unit A -55 175 C -55 150 C 150 C 1) Weight 6 MD mounting torque FC mounting force with clip d Spp/App d Spb/Apb VISOL terminal to terminal creepage distance on surface | striking distance through air terminal to backside t = 1 second isolation voltage t = 1 minute Product Marking Logo Part Number DateCode Assembly Code 50/60 Hz, RMS; IISOL 1 mA g 0.8 1.2 Nm 20 120 N 2.7 mm 4.1 mm 3600 V 3000 V Part number D S A 90 C 200 HR abcdef = = = = = = = Diode Schottky Diode low VF Current Rating [A] Common Cathode Reverse Voltage [V] ISO247 (3) YYWWZ 000000 Assembly Line Ordering Standard Part Number DSA90C200HR Similar Part DSSK60-02AR DSSK60-02A Equivalent Circuits for Simulation I V0 R0 Marking on Product DSA90C200HR Package ISOPLUS247 (3) TO-247AD (3) * on die level Delivery Mode Tube Code No. 508368 Voltage class 200 200 T VJ = 175 C Schottky V 0 max threshold voltage 0.49 V R 0 max slope resistance * 2.9 m IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Quantity 30 Data according to IEC 60747and per semiconductor unless otherwise specified 20130909b DSA90C200HR Outlines ISO247 A E A2 A3 2x E3 OP 2x D3 S Q Millimeter min max A 4.70 5.30 A1 2.21 2.59 A2 1.50 2.49 A3 typ. 0.05 b 0.99 1.40 b2 1.65 2.39 b4 2.59 3.43 c 0.38 0.89 D 20.79 21.45 D1 typ. 8.90 D2 typ. 2.90 D3 typ. 1.00 E 15.49 16.24 E1 typ. 13.45 E2 4.31 5.48 E3 typ. 4.00 e 5.46 BSC L 19.80 20.30 L1 4.49 O P 3.55 3.65 Q 5.38 6.19 S 6.14 BSC Dim. D D1 2x E2 4 1 2 D2 3 L1 E1 L 2x b2 b4 3x b C A1 2x e 1 IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved 2 Inches min max 0.185 0.209 0.087 0.102 0.059 0.098 typ. 0.002 0.039 0.055 0.065 0.094 0.102 0.135 0.015 0.035 0.819 0.844 typ. 0.350 typ. 0.114 typ. 0.039 0.610 0.639 typ. 0.530 0.170 0.216 typ. 0.157 0.215 BSC 0.780 0.799 0.177 0.140 0.144 0.212 0.244 0.242 BSC 3 Data according to IEC 60747and per semiconductor unless otherwise specified 20130909b DSA90C200HR Schottky 100 10000 100 10 TVJ=175C 150C IF 1 IR 10 CT 100C [pF] 1000 [mA] TVJ = 175C 125C 25C [A] 125C 0.1 75C 0.01 50C TVJ = 25C 25C 1 0.0 0.001 0.2 0.4 0.6 0.8 1.0 1.2 100 0 50 100 Fig. 1 Max. forward voltage drop characteristics 150 0 50 100 150 VR [V] VR [V] Fig. 2 Typ. reverse current IR vs. reverse voltage VR Fig. 3 Typ. junction capacitance CT vs. reverse voltage VR VF [V] 80 60 50 60 IF(AV) d = 0.5 DC P(AV) 40 40 d= DC 0.5 0.33 0.25 0.17 0.08 30 [A] [W] 20 20 10 0 0 0 40 80 120 0 160 10 20 30 40 50 60 70 TC [C] IF(AV) [A] Fig. 4 Avg. forward current IF(AV) vs. case temp. TC Fig. 5 Forward power loss characteristics Rthi 0.041 0.087 0.258 0.486 0.078 1 ZthJH ti 0.0002 0.0065 0.037 0.182 2.43 0.1 [K/W] 0.01 0.001 Note: All curves are per diode 0.01 0.1 1 10 t [s] Fig. 6 Transient thermal impedance junction to heatsink IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130909b Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: IXYS: DSA90C200HR