DSA90C200HR
Low Loss and Soft Recovery
High Performance Schottky Diode
Common Cathode
Schottky Diode Gen ²
1 2 3
Part number
DSA90C200HR
Backside: isolated
FAV
F
VV0.79
RRM
45
200
=
V= V
I= A
2x
Features / Ad vantages: Applications: Package:
● Very low Vf
● Extremely low switching losses
● Low Irm values
● Improved thermal behaviour
● High reliability circuit operation
● Low voltage peaks for reduced
protection circuits
● Low noise switching
● Rectifiers in switch mode power
supplies (SMPS)
● Free wheeling diode in low voltage
converters
ISO247
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
● Soldering pins for PCB mounting
● Backside: DCB ceramic
● Reduced weight
● Advanced power cycling
● Isolation Voltage: V~
3600
IXYS reserves the right to change limits, conditions and dimensions. 20130909bData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DSA90C200HR
V = V
Symbol Definition
Ratings
typ. max.
I
R
V
I
A
V
F
0.91
R0.7 K/
W
R
min.
45
V
RSM
V
2T = 25°C
VJ
T = °C
VJ
m
A
5V = V
R
T = 25°C
VJ
I = A
F
V
T = °C
C
145
P
tot
215
W
T = 25°C
C
RK/
W
45
200
max. non-repetitive reverse blocking voltage
reverse current, drain current
forward voltage drop
total power dissipation
Conditions Uni
t
1.10
T = 25°C
VJ
125
V
F0
V
0.49T = °C
VJ
175
r
F
5.5 m
Ω
V
0.79T = °C
VJ
I = A
F
V
45
1.03
I = A
F
90
I = A
F
90
threshold voltage
slope resistance for power loss calculation only
m
A
125
V
RRM
V
200
max. re pe titive rev er se blockin g volt a ge T = 25°C
VJ
C
J
394
j
unction capacitance V = V24 T = 25°Cf = 1 MHz
RVJ
p
F
I
FSM
t = 10 ms; (50 Hz), sine; T = 45°C
VJ
max. forward surge current V = 0 V
R
T = °C
VJ
175
600
A
200
FAV
d =rectangular 0.5
average forward current
thermal resistance junction to case
thJC
thermal resistance case to heatsink
thCH
Schottky
200
0.25
IXYS reserves the right to change limits, conditions and dimensions. 20130909bData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DSA90C200HR
Ratings
000000
YYWWZ
Logo
Part Number
DateCode
Assembly Code
abcdef
Product Marking
Assembly Line
D
S
A
90
C
200
HR
Part number
Diode
Schottky Diode
low VF
Common Cathode
ISO247 (3)
=
=
=
DSSK60-02A TO-247AD (3) 200
Current Rating [A]
Reverse Voltage [V]
=
=
=
=
Package
T
op
°C
M
D
Nm1.2
mounting torque 0.8
T
VJ
°C175
virt ua l j un ctio n temp eratu re -55
Weight g6
Symbol Definition typ. max.min.Conditions
operation temperature
Unit
F
C
N120
mount ing for ce w i th cli p 20
VV
t = 1 second
V
t = 1 minute
isolation voltage
mm
mm
2.7
4.1
d
Spp/App
creepage distance on surface | striking distance through air
d
Spb/Apb
terminal to backside
I
RMS
RMS current 70 A
per terminal
150-55
terminal to terminal
ISO247
Similar Part Package Voltage class
DSSK60-02AR ISOPLUS247 (3) 200
Delivery Mode Quantity Code No.Part Number Marking on ProductOrdering
1
)
50/60 Hz, RMS; I ≤ 1 mA
ISOL
DSA90C200HR 508368Tube 30DSA90C200HRStandard
3000
3600
ISOL
T
stg
°C150
storage temperature -55
threshold voltage V0.49
mΩ
V
0 max
R
0 max
slope resistance * 2.9
Equivalent Circuits for Simulation
T =
VJ
IV
0
R
0
Schottky
175 °C
* on die level
IXYS reserves the right to change limits, conditions and dimensions. 20130909bData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DSA90C200HR
S
Ø
P2x D3
D1
E1
4
123
L
L1
2x
b2
3x
b
b4
2x
e
2x
E2
D
E
Q
A
A2
A1
C
D2
2x
E3
A3
min max min max
A 4.70 5.30 0.185 0.209
A1 2.21 2.59 0.087 0.102
A2 1.50 2.49 0.059 0.098
A3 typ. 0.05 typ. 0.002
b 0.99 1.40 0.039 0.055
b2 1.65 2.39 0.065 0.094
b4 2.59 3.43 0.102 0.135
c 0.38 0.89 0.015 0.035
D 20.79 21.45 0.819 0.844
D1 typ. 8.90 typ. 0.350
D2 typ. 2.90 typ. 0.114
D3 typ. 1.00 typ. 0.039
E 15.49 16.24 0.610 0.639
E1 typ. 13.45 typ. 0.530
E2 4.31 5.48 0.170 0.216
E3 typ. 4.00 typ. 0.157
e 5.46BSC 0.215BSC
L 19.80 20.30 0.780 0.799
L1 - 4.49 - 0.177
Ø P 3.55 3.65 0.140 0.144
Q 5.38 6.19 0.212 0.244
S 6.14BSC 0.242BSC
Dim.
Millimeter Inches
1 2 3
Outlines ISO247
IXYS reserves the right to change limits, conditions and dimensions. 20130909bData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DSA90C200HR
0.0 0.2 0.4 0.6 0.8 1.0 1.2
1
10
100
0 50 100 150
0.001
0.01
0.1
1
10
100
10 30 50 700 204060
0
10
20
30
40
50
60
0.001 0.01 0.1 1 10
0.01
0.1
1
0 40 80 120 160
0
20
40
60
80
0 50 100 150
100
1000
10000
TVJ=175°C
150°C
125°C
100°C
25°C TVJ =25°C
50°C
75°C
I
F
[A]
V
F
[V]
I
R
[mA]
V
R
[V] V
R
[V]
C
T
[pF]
T
C
I]C°[
F(AV)
[A]
P
(AV)
[W]
Z
thJH
[K/W]
t[s]
Note: All curves are per diode
Fig. 1 Max. forward voltage
drop characteristics
Fig. 2 Typ. reverse current
I
R
vs. reverse voltage V
R
Fig. 3 Typ. junction capacitance
C
T
vs. reverse voltage V
R
Fig. 4 Avg. forward current
I
F(AV)
vs. case temp. T
C
Fig. 5 Forward power loss
characteristics
Fig. 6 Transient thermal impedance junction to heatsink
I
F(AV)
[A]
DC
R
thi
t
i
0.041 0.0002
0.087 0.0065
0.258 0.037
0.486 0.182
0.078 2.43
TVJ =
175°C
125°C
25°C
d = 0.5 d =
DC
0.5
0.33
0.25
0.17
0.08
Schottky
IXYS reserves the right to change limits, conditions and dimensions. 20130909bData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
