2N4904 2N4905 2N4906 2N4913 2N4914 2N4915 PNP NPN COMPLEMENTARY SILICON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4904, 2N4913 series types are complementary silicon power transistors, manufactured by the epitaxial base process, designed for general purpose amplifier and switching applications. MARKING: FULL PART NUMBER TO-3 CASE MAXIMUM RATINGS: (TC=25C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO 2N4904 2N4913 40 40 VEBO IC IEBO BVCEO BVCEO BVCEO VCE(SAT) VCE(SAT) VBE(ON) hFE hFE hfe fT 2N4906 2N4915 80 UNITS V 60 80 V 5.0 V 5.0 A IB PD TJ, Tstg -65 to +200 C JC 2.0 C/W ELECTRICAL CHARACTERISTICS: (TC=25C unless otherwise noted) PNP SYMBOL TEST CONDITIONS MIN MAX ICBO VCB=Rated VCBO 0.1 ICEO VCE=Rated VCEO 1.0 ICEV ICEV 2N4905 2N4914 60 1.0 A 87.5 W NPN MIN MAX 1.0 UNITS mA - 1.0 mA - 0.1 - 1.0 mA - 2.0 - 2.0 mA - 1.0 - 1.0 mA IC=200mA (2N4904, 2N4913) IC=200mA (2N4905, 2N4914) 40 - 40 - V 60 - 60 - V IC=200mA (2N4906, 2N4915) IC=2.5A, IB=250mA 80 - 80 - V - 1.0 - 1.0 V IC=5.0A, IB=1.0A VCE=2.0V, IC=2.5A - 1.5 - 1.5 V - 1.4 - 1.4 V VCE=2.0V, IC=2.5A VCE=2.0V, IC=5.0A 25 100 25 100 7.0 - 7.0 - VCE=10V, IC=500mA, f=1.0kHz VCE=10V, IC=1.0A, f=1.0MHz 40 - 20 - 4.0 - 4.0 - VCE=Rated VCEO, VBE=1.5V VCE=Rated VCEO, VBE=1.5V, TC=150C VEB=5.0V MHz R1 (7-March 2013) 2N4904 2N4905 2N4906 2N4913 2N4914 2N4915 PNP NPN COMPLEMENTARY SILICON POWER TRANSISTORS TO-3 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Emitter Case) Collector MARKING: FULL PART NUMBER R1 (7-March 2013) w w w. c e n t r a l s e m i . c o m