Semiconductor Group 1 Jan-31-1997
BAT 64
Silicon Schottky Diodes
Preliminary data
• For low-loss, fast-recovery, meter protection,
bias isolation and clamping applications
• Integrated diffused guard ring
• Low forward voltage
Pin Configuration
BAT 64-04 BAT64-05 BAT64-06
ESD: ElectroStatic Discharge sensitive device, observe handling precautions!
Type Marking Ordering Code Pin Configuration Package
BAT 64 63s Q62702-A879 1 = A 3 = C SOT-23
BAT 64-04 64s Q62702-A961 1 = A 2 = C 3 = C/A SOT-23
BAT 64-05 65s Q62702-A962 1 = A 2 = A 3 = C/C SOT-23
BAT 64-06 66s Q62702-A963 1 = C 2 = C 3 = A/A SOT-23
Maximum Ratings
Parameter Symbol Values Unit
Diode reverse voltage
V
R 40 V
Forward current
I
F 250 mA
Average forward current (50/60Hz, sinus)
I
FAV 120
Surge forward current (
t
≤ 10ms)
I
FSM 800
Total Power dissipation
T
S = 61 °C
P
tot 250 mW
Junction temperature
T
j 150 °C
Storage temperature
T
stg - 55 ... + 150
Thermal Resistance
Junction ambient 1)
R
thJA ≤ 495 K/W
Junction - soldering point
R
thJS ≤ 355
1) Package mounted on epoxy pcb 40mm x 40mmm x 1.5mm / 0.5cm2 Cu
Semiconductor Group 2 Jan-31-1997
BAT 64
Electrical Characteristics at
T
A=25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC characteristics
Reverse current
V
R = 25 V,
T
A = 25 °C
V
R = 25 V,
T
A = 85 °C
I
R
-
--
- 200
2 µA
Forward voltage
I
F = 1 mA
I
F = 10 mA
I
F = 30 mA
I
F = 100 mA
V
F
-
-
-
-
570
440
385
320
750
520
430
350 mV
V
AC Characteristics
Diode capacitance
V
R = 1 V,
f
= 1 MHz
C
T- 4 6 pF
Forward Current
I
F =
f
(
V
F)Reverse current
I
R =
f
(
V
R)
T
A = Parameter
Semiconductor Group 3 Jan-31-1997
BAT 64
Diode capacitance
C
T =
f
(
V
R)
f
= 1MHz Forward current
I
F =
f
(
T
A*;
T
S)
* Package mounted on epoxy
BAT 64
Forward current
I
F =
f
(
T
A*;
T
S)
* Package mounted on epoxy
BAT 64-04... (
I
F per diode)
