BDT65; 65A BDT65B; 65C SILICON DARLINGTON POWER TRANSISTORS an i Mt 5 N-P-N epitaxial base transistors in monolithic Darlington circuit for audio output stages and general purpose amplifier and switching applications. TO-220 plastic envelope. P-N-P complements are BDT64; BDT64A; BDT64B and BDTS4C. QUICK REFERENCE DATA Collector-base voltage (open emitter} Collector-emitter voltage (open base) Emitter-base voltage (open collector) Collector current (peak value) Total power dissipation up to Trp = 25 OC Junction temperature D.C. current gain le =5 A; Vce=4V max. max, max. max. max, max. BOT6S | 65A | 658 | 65C 60 | 20 | 100 | 120 60 80 100 120 5| 5] s| 5 20) 125 150 1000 Vv Vv V A W oC MECHANICAL DATA Fig. 1 TO-220AB. Collector connected to mounting base. ! 3,5 max not tinned 14 max {2} = 51 Mmoax a 127 min - Ls-qaeiai (3x) cS Dimensions in mm ~ les 0.6 - 724 , \e Dd fBDT65; 65A BDT65B; 65C CHARACTERISTICS 1) = 25 C, unless otherwise specified Collector cut-off current Ves = VcpOmax! !e =0 Voce = 4Vcpomax: !e = 0; Tj = 150C Ip = 0; Vce = 4VCEOmax Emitter cut-off current lc=0;Vepa5V D.C. current gain* lo= 1A;Vcp=4V lc= 5A; Vce=4V Ic=12A;Vcp=4V Base-emitter voltage Ic= 5A; Vce=4V Collector-emitter saturation valtage* lce= SA; Ip= 20mA lc = 10 A; lp = 100 mA Diode, forward voltage Ic= 5A lp =12A Collector capacitance at f = 1 MHz Veg =10V; Ie =1,=0 Second-breakdown collector current non-repetitive; without heatsink Voce =60V;t, =0,1s Turn-off breakdown energy with inductive joad: lBott = 9: lem =6,3 A L = 5 mH (see Fig. 3) Switching times (see Figs 4 and 5) ICon = 5 A; !Bon = lBoft = 20 mA turn-on time turn-off time small-signal current gain Ic=S5A;Vee=3Vi f= 1 MHz * Measured under pulse conditions tp = 300 us; 6 < 2%, ICBO lcBO IcCEO leEBO loff lhel typ. typ. typ. typ. typ. Typ. typ. PIN Bd , { Se mA, mA 1 mA 1500 1000 1000 2,5 200 100 2:5 6,0 20 mA pF mJ ps es us us MAGNA _BDT65; 65A BDT65B; 65C | | | | TIBHL4E 2 Fig. 2 Circuit diagram. R1 typ. 5k; R2 typ. 80 2. RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) BDT65 = [$8 65C Collector-base voltage (open emitter) Collector-emitter voltage (open base) Emitter-base voltage (open collector) Collector current {d.c.} Wolleetor current (peak value} Base current (d.c.} Total power dissipation up to Tryp = 25 9C Storage temperature Junction temperature THERMAL RESISTANCE From junction to mounting base Vcso VceO VEBO Ic lou Ip Prot Tstg qj max. Max. Tha . Tax. max. max. max. max. Rth j-mb = 60 | 10 60 5 | ee 5 5 2! 20 500 125 65 to + 150 150 0 5 | mA a oC K/WBDT65; 65A BDT65B; 65C vert, oscilloscope + 01.0 Veo x i T.U.T, hor, 0 or he (t le) oscilloscope 8 | TETIO63 21 +] |. b _7>_ Fig. 3 Test circuit for turn-off breakdown energy. Vim=12V;Re= 270 2: tp = 1ms; 6 = 1%. Fig. 4 Switching times waveforms. Vec = dV Vim = 16V VaB= Av Rl = 562 R2 =4100 R3 =560 9 R4 = 62 tp=te= 15 ns ty = 10us T = 500 ps Fig. 5 Switching times test circuit.ge ey PEN wr MAGNA MAGNA * _ A in BDT65; 65A BDT6SB; 65C 102 le (A) 10 107! aDT6 BDOT65A BOT65B BDT65C 1 10 107, Vee (V) Fig. 6 Safe Operating ARea; Typ = 25 OC. | Region of permissible d.c. operation, Il Permissible extension for repetitive pulse operation. (1) Prot max and Poeak max lines, (2) Second-breakdown limits (independent of temperature).4 is Gupjes vaacd asjng g Bry 1 ee ,-01 z-0l -0l -Ol 5-01 CM AD qus-fil > SEEERZE aL Qo Gz = SMP tag = Foy quan so190)/00 pO UoNOUNY oot aEe OA JayMuE-aseg g iy Wins Buyeiap iaaog big 1A) 39, que ' Fl (3g) qe z Sl I ost oo a Oo : : i] s as SL () i 9 (Vel row Wed OL GOL Os9 dS9108 WS9 -S9108 yaaa) MMWUOFD 4 ayn ye sopoey GunAydiyjnu wuauins g's | Ely a 201 faut ol L ,-Ol zo O= 97 01 RLhCeze pana SEW) Oy) Ve J0y2ey BurApdiypmu abeyjoa g's gy Big a 201 (ae ol L ,-0l OL etla ie ~ MAGNA A TEM SE, BDT65: 65A ie BDT65B: 65C lied 104 103 102 107! 1 10 Ic (A) 107 Fig. 12 Typical d.c. current gain as a function of collector current; Vee = 3 V; 7) = 25 oC. VeEsat [mv] | rot L167 24 [BAL 7A 104 [124 15A 102 107! 1 10 10? ig (ma) 107 Fig. 13 Typical collector-emitter saturation voltages.