BC856...BC860
1 Aug-31-2001
PNP Silicon AF Transistors
For AF input stages and driver applications
High current gain
Low collector-emitter saturation voltage
Low noise between 30 Hz and 15 kHz
Complementary types: BC846, BC847, BC848
BC849, BC850 (NPN)
1
2
3
VPS05161
Type Marking Pin Configuration Package
BC856A
BC856B
BC857A
BC857B
BC857C
BC858A
BC858B
BC858C
BC859A
BC859B
BC859C
BC860B
BC860C
3As
3Bs
3Es
3Fs
3Gs
3Js
3Ks
3Ls
4As
4Bs
4Cs
4Fs
4Gs
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
BC856...BC860
2 Aug-31-2001
Maximum Ratings
Parameter Symbol BC856 BC857
BC860 BC858
BC859
Unit
Collector-emitter voltage VCEO 65 45 30 V
Collector-base voltage VCBO 80 50 30
Collector-emitter voltage VCES 80 50 30
Emitter-base voltage VEBO 5 5 5
DC collector current IC100 mA
Peak collector current ICM 200 mA
Peak base current IBM 200
Peak emitter current 200
IEM
Total power dissipation, TS = 71 °C Ptot 330 mW
Junction temperature Tj150 °C
Storage temperature Tst
g
-65 ... 150
Thermal Resistance
Junction - soldering point1) RthJS
240 K/W
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0
BC856
BC857/860
BC858/859
V(BR)CEO
65
45
30
-
-
-
-
-
-
V
Collector-base breakdown voltage
IC = 10 µA, IB = 0
BC856
BC857/860
BC858/859
V(BR)CBO
80
50
30
-
-
-
-
-
-
1For calculation of RthJA please refer to Application Note Thermal Resistance
BC856...BC860
3 Aug-31-2001
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 10 µA, VBE = 0
BC856
BC857/860
BC858/859
V(BR)CES
80
50
30
-
-
-
-
-
-
V
Emitter-base breakdown voltage
IE = 1 µA, IC = 0 V(BR)EBO 5 - -
Collector cutoff current
VCB = 30 V, IE = 0 ICBO - - 15 nA
Collector cutoff current
VCB = 30 V, IE = 0 , TA = 150 °C ICBO - - 5 µA
DC current gain 1)
IC = 10 µA, VCE = 5 V
hFE-group A
hFE-group B
hFE-group C
hFE
-
-
-
140
250
480
-
-
-
-
DC current gain 1)
IC = 2 mA, VCE = 5 V
hFE-group A
hFE-group B
hFE-group C
hFE
125
220
420
180
290
520
250
475
800
Collector-emitter saturation voltage1)
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
VCEsat
-
-
75
250
300
650
mV
Base-emitter saturation voltage 1)
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
VBEsat
-
-
700
850
-
-
Base-emitter voltage 1)
IC = 2 mA, VCE = 5 V
IC = 10 mA, VCE = 5 V
VBE(ON)
600
-
650
-
750
820
1) Pulse test: t ≤=300µs, D = 2%
BC856...BC860
4 Aug-31-2001
Electrical Characteristics at T
A
= 25°C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics
Transition frequency
IC = 20 mA, VCE = 5 V, f = 100 MHz fT- 250 - MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz Ccb - 3 - pF
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz Ceb - 8 -
Short-circuit input impedance
IC = 2 mA, VCE = 5 V, f = 1 kHz
hFE-gr.A
hFE-gr.B
hFE-gr.C
h11e
-
-
-
2.7
4.5
8.7
-
-
-
k
Open-circuit reverse voltage transf.ratio
IC = 2 mA, VCE = 5 V, f = 1 kHz
hFE-gr.A
hFE-gr.B
hFE-gr.C
h12e
-
-
-
1.5
2
3
-
-
-
10-4
Short-circuit forward current transf.ratio
IC = 2 mA, VCE = 5 V, f = 1 kHz
hFE-gr.A
hFE-gr.B
hFE-gr.C
h21e
-
-
-
200
330
600
-
-
-
-
Open-circuit output admittance
IC = 2 mA, VCE = 5 V, f = 1 kHz
hFE-gr.A
hFE-gr.B
hFE-gr.C
h22e
-
-
-
18
30
60
-
-
-
S
Noise figure
IC = 0.2 mA, VCE = 5 V, RS = 2 k
,
f = 1 kHz,
f = 200 Hz
BC 859
BC 860
F- 1 4 dB
Equivalent noise voltage
IC = 200 µA, VCE = 5 V, RS = 2 k
,
f = 10 ... 50 Hz
BC 860 Vn- - 0.11 µV
BC856...BC860
5 Aug-31-2001
Collector-base capacitance CCB = f (VCBO
)
Emitter-base capacitance CEB = f (VEBO)
0
4
10 510 10
EHP00376
VCB0
CEB0
V
6
2
EB0
V
EBO
C
8
10
pF
12
CB0
C
-1 0 1
CCBO
(
(
)
BC 856...860
)
Total power dissipation Ptot = f(TS)
0 15 30 45 60 75 90 105 120 °C 150
TS
0
30
60
90
120
150
180
210
240
270
300
mW
360
Ptot
Permissible pulse load
Ptotmax / PtotDC = f (tp)
10
EHP00377
-6
0
10
5
D
=
5
10
1
5
10
2
3
10
10
-5
10
-4
10
-3
10
-2
10
0
s
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
t
p
=
DT
t
p
T
totmax
tot
P
DC
P
p
t
Transition frequency fT = f (IC)
VCE = 5V
10 10 10 10
EHP00378
f
mA
MHz
-1 0 1 2
5
T
3
10
10
2
1
10
5
5
5
C
Ι
BC856...BC860
6 Aug-31-2001
Collector cutoff current ICBO = f (TA)
VCB = 30V
10 0 50 100 150
EHP00381
TA
5
10
10
nA
10
Ι
CB0
5
5
5
10
10
4
3
2
1
0
-1
max
typ
C
Collector-emitter saturation voltage
IC = f (VCEsat), hFE = 20
10 0
EHP00380
VCEsat
10
mA
10
10
2
1
0
-1
5
5
V
0.3 0.5
100
25
-50
0.1 0.2 0.4
C
Ι
C
C
C
DC current gain hFE = f (IC)
VCE = 5V
10 10 10 10
EHP00382
h
mA
-2 -1 12
FE
3
10
10
2
0
10
5
5
10
1
0
10
5
555
100
25
-50
C
Ι
C
C
C
Base-emitter saturation voltage
IC = f (VBEsat), hFE = 20
0
10
EHP00379
BEsat
V
0.6 V 1.2
-1
10
0
10
1
2
10
5
5
Ι
C
mA
0.2 0.4 0.8
C
25
C
100
C
-50
C
BC856...BC860
7 Aug-31-2001
h parameter he = f (VCE) normalized
IC = 2mA
00102030
BC 856...860 EHP00384
V
CE
h
e
V
1.0
0.5
1.5
2.0
= 2 mA
h
11
12
h
h
22
C
Ι
h parameter he = f (IC) normalized
VCE = 5V
10 10 10
BC 856...860 EHP00383
mA
-1 0 1
5
e
h
2
10
-1
10
1
10
10
0
5
5
5
h11e
h12e
h21e
h22e
VCE = 5 V
C
Ι
Noise figure F = f (VCE)
IC = 0.2mA, RS = 2k
, f = 1kHz
0
10 10 10 10
BC 856...860 EHP00385
VCE
F
V
10
5
15
dB
20
-1012
5 5
Noise figure F = f (f)
IC = 0.2mA, VCE = 5V, RS = 2k
10 10 10 10
BC 856...860 EHP00386
F
kHz
dB
-2 -1 1 2
20
10
0
5
15
f
0
10
BC856...BC860
8 Aug-31-2001
Noise figure F = f (IC)
VCE = 5V, f = 1kHz
10 10 10 10
BC 856...860 EHP00388
F
mA
-3 -2 0 1
20
10
0
5
15
-1
10
= 1 M
100 k
10 k
dB
500
1 k
ΩΩΩ
S
R
Ω
Ω
C
Ι
Noise figure F = f (IC)
VCE = 5V, f = 120Hz
10 10 10 10
BC 856...860 EHP00387
F
mA
-3 -2 0 1
20
10
0
5
15
-1
10
= 1 M 100 k 10 k
dB
500
1 k
ΩΩΩ
S
R
Ω
Ω
C
Ι
Noise figure F = f (IC)
VCE = 5V, f = 10kHz
10 10 10 10
BC 856...860 EHP00389
mA
-3 -2 0 1
20
10
0
5
15
-1
10
dB
F
Ι
C
= 1 MRSΩ
Ω
100 k
Ω
10 k
500 Ω
Ω
1 k
