2SK3911
2009-09-29
1
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACHII π-MOSVI)
2SK3911
Switching Regulator Applications
• Small gate charge: Qg = 60 nC (typ.)
• Low drain-source ON resistance: RDS (ON) = 0.22 Ω (typ.)
• High forward transfer admittance: |Yfs| = 11 S (typ.)
• Low leakage current: IDSS = 500 μA (VDS = 600 V)
• Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Symbol Rating Unit
Drain-source voltage VDSS 600 V
Drain-gate voltage (RGS = 20 kΩ) VDGR 600 V
Gate-source voltage VGSS ±30 V
DC (Note 1) ID 20
Drain current
Pulse (Note 1) IDP 80
A
Drain power dissipation (Tc = 25°C) PD 150 W
Single pulse avalanche energy
(Note 2)
EAS 792 mJ
Avalanche current IAR 20 A
Repetitive avalanche energy (Note 3) EAR 15 mJ
Channel temperature Tch 150 °C
Storage temperature range Tstg -55 to 150 °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/’’Derating Concept and Methods’’) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristic Symbol Max Unit
Thermal resistance, channel to case Rth (ch-c) 0.833 °C/W
Thermal resistance, channel to ambient Rth (ch-a) 50 °C/W
Note 1: Ensure that the channel temperature does not exceed 150°C during
use of the device.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 3.46 mH, IAR = 20 A, RG = 25 Ω
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
1. GATE
2. DRAIN (HEATSINK)
3. SOURCE
JEDEC ―
JEITA SC-65
TOSHIBA 2-16C1B
Weight: 4.6 g (typ.)
1
3
2
2SK3911
2009-09-29
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Electrical Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min Typ. Max Unit
Gate leakage current IGSS V
GS = ±25 V, VDS = 0 V ⎯ ⎯ ±10 μA
Gate-source breakdown voltage V (BR) GSS IG = ±10 μA, VDS = 0 V ±30 ⎯ ⎯ V
Drain cutoff current IDSS V
DS = 600 V, VGS = 0 V ⎯ ⎯ 500 μA
Drain-source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 600 ⎯ ⎯ V
Gate threshold voltage Vth V
DS = 10 V, ID = 1 mA 2.0 ⎯ 4.0 V
Drain-source ON resistance RDS (ON) V
GS = 10 V, ID = 10 A ⎯ 0.22 0.32 Ω
Forward transfer admittance ⎪Yfs⎪ V
DS = 10 V, ID = 10 A 3.0 11 ⎯ S
Input capacitance Ciss ⎯ 4250 ⎯
Reverse transfer capacitance Crss ⎯ 10 ⎯
Output capacitance Coss
VDS = 25 V, VGS = 0 V, f = 1 MHz
⎯ 420 ⎯
pF
Rise time tr ⎯ 12 ⎯
Turn-on time ton ⎯ 45 ⎯
Fall time tf ⎯ 12 ⎯
Switching time
Turn-off time toff
⎯ 80 ⎯
ns
Total gate charge Qg ⎯ 60 ⎯
Gate-source charge Qgs ⎯ 50 ⎯
Gate-drain charge Qgd
VDD ≈ 400 V, VGS = 10 V, ID = 20 A
⎯ 10 ⎯
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min Typ. Max Unit
Continuous drain reverse current
(Note 1)
IDR ⎯ ⎯ ⎯ 20 A
Pulse drain reverse current (Note 1) IDRP ⎯ ⎯ ⎯ 80 A
Forward voltage (diode) VDSF I
DR = 20 A, VGS = 0 V ⎯ ⎯ −1.7 V
Reverse recovery time trr ⎯ 1350 ⎯ ns
Reverse recovery charge Qrr
IDR = 20 A, VGS = 0 V,
dIDR/dt = 100 A/μs ⎯ 24 ⎯ μC
Marking
RL =
20 Ω
0 V
10 V
VGS
VDD ≈ 200 V
ID = 10 A VOUT
4.7 Ω
Duty ≤ 1%, tw = 10 μs
K3911
TOSHIBA
Lot No.
Note 4
Part No. (or abbreviation code)
Note 4: A line under a Lot No. identifies the indication of product
Labels.
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
2SK3911
2009-09-29
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ID – VDS
DRAIN CURRENT ID (A)
DRAIN−SOURCE VOLTAGE VDS (V)
0
20
4
12
8
16
0 2 10
4 6 8
10
8
5.5
6.5
VGS = 5 V
COMMON
SOURCE
Tc = 25°C
Pulse test
ID – VDS
DRAIN CURRENT ID (A)
DRAIN−SOURCE VOLTAGE VDS (V)
0
50
10
30
20
40
40 20
816
COMMON SOURCE
Tc = 25°C
PULSE TEST
VDS – VGS
DRAIN−SOURCE VOLTAGE VDS (V)
GATE−SOURCE VOLTAGE VGS (V)
0
20
4
12
8
16
40 20
8 12 16
5 10
ID = 20 A
COMMON SOURCE
Tc = 25°C
PULSE TEST
10 8
6
6.5
7
6
RDS (ON) − ID
DRAIN−SOURCE ON RESISTANCE
RDS (ON) (mΩ)
DRAIN CURRENT ID (A)
10
1000
1 100
VGS = 10 V
COMMON SOURCE
Tc = 25°C
PULSE TEST
10
100
VGS = 5 V
5.5
7
12
ID – VGS
DRAIN CURRENT ID (A)
GATE−SOURCE VOLTAGE VGS (V)
0
50
10
20
40
2 0 10
6 8
100
25
Tc = −55°C
COMMON SOURCE
VDS = 20 V
PULSE TEST
⎪Yfs⎪ − ID
FORWARD TRANSFER ADMITTANCE
⎪Yfs⎪ (S)
DRAIN CURRENT ID (A)
0.1
100
10
0.1 100 10
30
4
1
1
COMMON SOURCE
VDS = 20 V
PULSE TEST
Tc = −55°C
25
100
2SK3911
2009-09-29
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GATE THRESHOLD VOLTAGE Vth (V)
CASE TEMPERATURE Tc (°C)
Vth − Tc
COMMON SOURCE
VDS = 10 V
ID = 1 mA
PULSE TEST
0
5
1
3
2
4
−40−80 160
0 80 120 40
VGS = 0 V
1
3
10
5
DRAIN−SOURCE VOLTAGE VDS (V)
IDR − VDS
DRAIN REVERSE CURRENT IDR (A)
COMMON SOURCE
Tc = 25°C
PULSE TEST
0.1
100
10
1
0−1.6
−0.4 −1.2 −0.8
ID = 20 A
10
5
COMMON SOURCE
VGS = 10 V
PULSE TEST
RDS (ON) – Tc
DRAIN−SOURCE ON RESISTANCE
RDS (ON) (mΩ)
CASE TEMPERATURE Tc (°C)
0
1000
200
600
400
800
−80 −40 160
0 80 120 40
CAPACITANCE C (pF)
DRAIN−SOURCE VOLTAGE VDS (V)
C – VDS
DRAIN POWER DISSIPATION PD (W)
CASE TEMPERATURE Tc (°C)
PD – Tc
200
120
0
0 40 120
160 200
40
160
80
80
COMMON SOURCE
ID = 20 A
Tc = 25°C
PULSE TEST
100
200
VDD = 400 V
VDS
VGS
GATE−SOURCE VOLTAGE VGS (V)
TOTAL GATE CHARGE Qg (nC)
DYNAMIC INPUT/OUTPUT
CHARACTERISTICS
DRAIN−SOURCE VOLTAGE VDS (V)
0
0
200
300
500
60 10080
100
400
20 40
0
8
12
20
4
16
10000
Ciss
Coss
Crss
1000
10
1
100
COMMON SOURCE
VGS = 0 V
f = 1 MHz
Tc = 25°C
0.1 1 10 100
2SK3911
2009-09-29
5
−15 V
15 V
TEST CIRCUIT WAVE FORM
IAR
BVDSS
VDD V
DS
RG = 25 Ω
VDD = 90 V, L = 3.46 mH ⎟
⎟
⎠
⎞
⎜
⎜
⎝
⎛
−
⋅⋅⋅= VDD
BVDSS
BVDSS
2
IL
2
1
ΕAS
rth – tw
PULSE WIDTH tw (s)
NORMALIZED TRANSIENT THERMAL
IMPEDANCE rth (t)/Rth (ch-c)
0.01
10μ
0.1
1
10
100μ 1m 10m 100m 1 10
0.001
Duty=0.5
0.2
0.1
0
.
05
0.02
0.01
SINGLE PULSE
T
PDM
t
Duty = t/T
Rth (ch-c) = 0.833°C/W
0
25
200
400
600
1000
800
50 75 100 125 150
SAFE OPERATING AREA
DRAIN CURRENT ID (A)
CHANNEL TEMPERATURE (INITIAL) Tch (°C)
EAS – Tch
AVALANCHE ENERGY EAS (mJ)
DRAIN−SOURCE VOLTAGE VDS (V)
1
0.1
10
100
1000
10 1000
DC OPERATION
Tc=25℃
100 μs *
1 ms *
ID max (PULSE) *
VDSS max
ID max (CONTINUOUS)
100
0.01
1
*: SINGLE NONPETITIVE PULSE
Tc = 25°C
Curves must be derated linearly
with increase in temperature
2SK3911
2009-09-29
6
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• Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively “Product”) without notice.
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TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must
also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document,
the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA
Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are
solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the
appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any
information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other
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equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.
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or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.
• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
noncompliance with applicable laws and regulations.
