JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate DIODE BZX84C2V4W-BZX84C39W ZENER SOT-323 DIODE FEATURES z Planar Die Construction z 200mW Power Dissipation z Zener Voltages from 2.4V - 39V z Ultra-Small Surface Mount Package Power dissipation Maximum Ratings @TA=25 unless otherwise specified Characteristic Forward Voltage (Note 2) Symbol @ IF = 10mA Power Dissipation(Note 1) Value Unit VF 0.9 V Pd 200 mW Thermal Resistance, Junction to Ambient Air RJA 625 / W Operating and Storage Temperature Range Tj,TSTG -65 to +150 Electrical Characteristics Type Number @ TA = 25C unless otherwise specified Zener Voltage Range (Note 2) Marking Code VZ @ IZT Maximum Zener Impedance (Note 3) IZT ZZT @ IZT ZZK @ IZK W Maximum Reverse Current Temperature Coefficient of Zener Voltage @ IZT = 5mA (mV/C) IZK IR @VR mA uA V Min Max Nom (V) Min (V) Max (V) mA KRB 2.4 2.2 2.6 5.0 100 600 1.0 50 1.0 -3.5 0 KRC 2.7 2.5 2.9 5.0 100 600 1.0 20 1.0 -3.5 0 KRD 3.0 2.8 3.2 5.0 95 600 1.0 20 1.0 -3.5 0 KRE 3.3 3.1 3.5 5.0 95 600 1.0 5.0 1.0 -3.5 0 BZX84C3V6W KRF 3.6 3.4 3.8 5.0 90 600 1.0 5.0 1.0 -3.5 0 BZX84C3V9W KRG 3.9 3.7 4.1 5.0 90 600 1.0 3.0 1.0 -3.5 0 BZX84C4V3W KRH 4.3 4.0 4.6 5.0 90 600 1.0 3.0 1.0 -3.5 0 BZX84C4V7W KR1 4.7 4.4 5.0 5.0 80 600 1.0 3.0 2.0 -3.5 0.2 BZX84C5V1W KR2 5.1 4.8 5.4 5.0 60 500 1.0 2.0 2.0 -2.7 1.2 BZX84C5V6W KR3 5.6 5.2 6.0 5.0 40 480 1.0 1.0 2.0 -2.0 2.5 BZX84C6V2W KR4 6.2 5.8 6.6 5.0 10 400 1.0 3.0 4.0 0.4 3.7 BZX84C6V8W KR5 6.8 6.4 7.2 5.0 15 150 1.0 2.0 4.0 1.2 4.5 BZX84C7V5W KR6 7.5 7.0 7.9 5.0 15 80 1.0 1.0 5.0 2.5 5.3 BZX84C8V2W KR7 8.2 7.7 8.7 5.0 15 80 1.0 0.7 5.0 3.2 6.2 BZX84C9V1W KR8 9.1 8.5 9.6 5.0 15 80 1.0 0.5 6.0 3.8 7.0 BZX84C10W KR9 10 9.4 10.6 5.0 20 100 1.0 0.2 7.0 4.5 8.0 BZX84C11W KP1 11 10.4 11.6 5.0 20 150 1.0 0.1 8.0 5.4 9.0 BZX84C12W KP2 12 11.4 12.7 5.0 25 150 1.0 0.1 8.0 6.0 10.0 BZX84C13W KP3 13 12.4 14.1 5.0 30 150 1.0 0.1 8.0 7.0 11.0 BZX84C15W KP4 15 13.8 15.6 5.0 30 170 1.0 0.1 10.5 9.2 13.0 BZX84C16W KP5 16 15.3 17.1 5.0 40 200 1.0 0.1 11.2 10.4 14.0 BZX84C18W KP6 18 16.8 19.1 5.0 45 200 1.0 0.1 12.6 12.4 16.0 BZX84C20W KP7 20 18.8 21.2 5.0 55 225 1.0 0.1 14.0 14.4 18.0 BZX84C22W KP8 22 20.8 23.3 5.0 55 225 1.0 0.1 15.4 16.4 20.0 BZX84C24W KP9 24 22.8 25.6 5.0 70 250 1.0 0.1 16.8 18.4 22.0 BZX84C27W KPA 27 25.1 28.9 2.0 80 250 0.5 0.1 18.9 21.4 25.3 BZX84C30W KPB 30.0 28.0 32.0 2.0 80 300 0.5 0.1 21.0 24.4 29.4 BZX84C33W KPC 33.0 31.0 35.0 2.0 80 300 0.5 0.1 23.1 27.4 33.4 BZX84C36W KPD 36.0 34.0 38.0 2.0 90 325 0.5 0.1 25.2 30.4 37.4 BZX84C39W KPE 39.0 37.0 41.0 2.0 130 350 0.5 0.1 27.3 33.4 41.2 BZX84C2V4W BZX84C2V7W BZX84C3V0W BZX84C3V3W Notes: 1. Valid provided that device terminals are kept at ambient temperature. 2. Tested with pulses, 300ms pulse width, 2% duty cycle. 3. f = 1KHz. BZX84C2V4W-BZX84C39W Typical Characteristics 500 50 Tj = 25C C2V7 C3V3 400 IZ, ZENER CURRENT (mA) Pd, POWER DISSIPATION (mW) See Note 1 300 200 100 0 100 0 200 TA, AMBIENT TEMPERATURE, C Fig. 1. Power Derating Curve 30 Tj = 25C C10 IZ, ZENER CURRENT (mA) C12 C15 20 C18 0 Test current IZ 2mA C22 10 Test current IZ 5mA 0 C27 C33 C36 10 20 30 VZ, ZENER VOLTAGE (V) Fig. 3, Zener Breakdown Characteristics C3V9 40 40 C5V6 C4V7 C6V8 C8V2 30 20 10 Test Current IZ 5.0mA 0 0 1 2 3 4 5 6 8 9 7 VZ, ZENER VOLTAGE (V) Fig. 2 Zener Breakdown Characteristics 10