JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate DIODE
BZX84C2V4W-BZX84C39W ZENER DIODE
FEATURES
z Planar Die Construction
z 200mW Power Dissipation
z Zener Voltages from 2.4V - 39V
z Ultra-Small Surface Mount Package Power dissipation
Maximum Ratings @TA=25℃ unless otherwise specified
Characteristic Symbol Value Unit
Forward Voltage (Note 2) @ I
F = 10mA VF 0.9 V
Power Dissipation(Note 1) Pd 200 mW
Thermal Resistance, Junction to Ambient Air RθJA 625 /℃W
Operating and Storage Temperature Range Tj,TSTG -65 to +150 ℃
SOT-323
Type
Number
Marking
Code
Zener Voltage
Range (Note 2)
Maximum Zener Impedance
(Note 3)
Maximum
Reverse
Current
Temperature
Coefficient of
Zener Voltage
@I
ZT = 5mA
(mV/°C)
VZ@I
ZT IZT ZZT @I
ZT ZZK @I
ZK IZK IR@VR
Nom (V) Min (V) Max (V) mA WmA uA V Min Max
BZX84C2V4W KRB 2.4 2.2 2.6 5.0 100 600 1.0 50 1.0 -3.5 0
BZX84C2V7W KRC 2.7 2.5 2.9 5.0 100 600 1.0 20 1.0 -3.5 0
BZX84C3V0W KRD 3.0 2.8 3.2 5.0 95 600 1.0 20 1.0 -3.5 0
BZX84C3V3W KRE 3.3 3.1 3.5 5.0 95 600 1.0 5.0 1.0 -3.5 0
BZX84C3V6W KRF 3.6 3.4 3.8 5.0 90 600 1.0 5.0 1.0 -3.5 0
BZX84C3V9W KRG 3.9 3.7 4.1 5.0 90 600 1.0 3.0 1.0 -3.5 0
BZX84C4V3W KRH 4.3 4.0 4.6 5.0 90 600 1.0 3.0 1.0 -3.5 0
BZX84C4V7W KR1 4.7 4.4 5.0 5.0 80 600 1.0 3.0 2.0 -3.5 0.2
BZX84C5V1W KR2 5.1 4.8 5.4 5.0 60 500 1.0 2.0 2.0 -2.7 1.2
BZX84C5V6W KR3 5.6 5.2 6.0 5.0 40 480 1.0 1.0 2.0 -2.0 2.5
BZX84C6V2W KR4 6.2 5.8 6.6 5.0 10 400 1.0 3.0 4.0 0.4 3.7
BZX84C6V8W KR5 6.8 6.4 7.2 5.0 15 150 1.0 2.0 4.0 1.2 4.5
BZX84C7V5W KR6 7.5 7.0 7.9 5.0 15 80 1.0 1.0 5.0 2.5 5.3
BZX84C8V2W KR7 8.2 7.7 8.7 5.0 15 80 1.0 0.7 5.0 3.2 6.2
BZX84C9V1W KR8 9.1 8.5 9.6 5.0 15 80 1.0 0.5 6.0 3.8 7.0
BZX84C10W KR9 10 9.4 10.6 5.0 20 100 1.0 0.2 7.0 4.5 8.0
BZX84C11W KP1 11 10.4 11.6 5.0 20 150 1.0 0.1 8.0 5.4 9.0
BZX84C12W KP2 12 11.4 12.7 5.0 25 150 1.0 0.1 8.0 6.0 10.0
BZX84C13W KP3 13 12.4 14.1 5.0 30 150 1.0 0.1 8.0 7.0 11.0
BZX84C15W KP4 15 13.8 15.6 5.0 30 170 1.0 0.1 10.5 9.2 13.0
BZX84C16W KP5 16 15.3 17.1 5.0 40 200 1.0 0.1 11.2 10.4 14.0
BZX84C18W KP6 18 16.8 19.1 5.0 45 200 1.0 0.1 12.6 12.4 16.0
BZX84C20W KP7 20 18.8 21.2 5.0 55 225 1.0 0.1 14.0 14.4 18.0
BZX84C22W KP8 22 20.8 23.3 5.0 55 225 1.0 0.1 15.4 16.4 20.0
BZX84C24W KP9 24 22.8 25.6 5.0 70 250 1.0 0.1 16.8 18.4 22.0
BZX84C27W KPA 27 25.1 28.9 2.0 80 250 0.5 0.1 18.9 21.4 25.3
BZX84C30W KPB 30.0 28.0 32.0 2.0 80 300 0.5 0.1 21.0 24.4 29.4
BZX84C33W KPC 33.0 31.0 35.0 2.0 80 300 0.5 0.1 23.1 27.4 33.4
BZX84C36W KPD 36.0 34.0 38.0 2.0 90 325 0.5 0.1 25.2 30.4 37.4
BZX84C39W KPE 39.0 37.0 41.0 2.0 130 350 0.5 0.1 27.3 33.4 41.2
Electrical Characteristics @ TA= 25°C unless otherwise specified
Notes: 1. Valid provided that device terminals are kept at ambient temperature.
2. Tested with pulses, 300ms pulse width, 2% duty cycle.
3. f = 1KHz.
0
10
20
30
40
50
01 2 3 4 5 6 78910
I , ZENER CURRENT (mA)
Z
V , ZENER VOLTAGE (V)
Fig. 2 Zener Breakdown Characteristics
Z
T = 25°C
jC2V7
C3V3
C3V9
C4V7
C5V6
C6V8
C8V2
Test Current I
5.0mA
Z
400
T , AMBIENT TEMPERATURE, °C
Fig. 1. Power DeratingCurve
A
P , POWER DISSIPATION (mW)
d
See Note 1
200
100
300
0
500
0100 200
0
10
20
30
0
I , ZENER CURRENT (mA)
Z
V , ZENER VOLTAGE (V)
Fi
g
. 3, Zener Breakdown Characteristics
Z
10 20 30 40
T = 25°C
j
Test current I
5mA
Z
Test current I
2mA
Z
C10
C12
C18
C22
C27
C33 C36
C15
Typical Characteristics BZX84C2V4W-BZX84C39W