APTM20AM08FTG
APTM20AM08FTG – Rev 2 July, 2006
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G1
Q1
VBUS NT C 2
OUT
S1
G2
S2
Q2
0/VBUS NT C1
S2
G2
NTC2
OUT
OUT
VB US
NTC1
S1 S2
G2
0/VBUS
G1
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
S
ymbol Parameter Ma
x
ratings Unit
VDSS Drain - Source Breakdown Voltage 200 V
Tc = 25°C 208
ID Continuous Drain Current Tc = 80°C 155
IDM Pulsed Drain current 832
A
VGS Gate - Source Voltage ±30 V
RDSon Drain - Source ON Resistance 10 mΩ
PD Maximum Power Dissipation Tc = 25°C 781 W
IAR Avalanche current (repetitive and non repetitive) 100 A
EAR Repetitive Avalanche Energy 50
EAS Single Pulse Avalanche Energy 3000 mJ
VDSS = 200V
RDSon = 8mΩ typ @ Tj = 25°C
ID = 208A @ Tc = 25°C
Applicatio
n
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
Features
• Power MOS 7® FREDFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic reverse diode
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
• Internal thermistor for temperature monitoring
• High level of integration
Benefits
• Outsta ndi ng performance at hi gh freq ue nc y operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
• RoHS Compliant
P
hase leg
MOSFET Power Module
APTM20AM08FTG
APTM20AM08FTG – Rev 2 July, 2006
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All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
VGS = 0V,VDS = 200V Tj = 25°C 375
IDSS Zero Gate Voltage Drain Current VGS = 0V,VDS = 160V T
j = 125°C 1500 µA
RDS(on) Drain – Source on Resistance VGS = 10V, ID = 104A 8 10
mΩ
VGS(th) Gate Threshold Voltage VGS = VDS, ID = 5mA 3 5 V
IGS S Gate – Source Leakage Current VGS = ±30 V, VDS = 0V ±150 nA
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Cis s Input Capacitance 14.4
Coss Output Capacitance 4.66
Crss Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz 0.29
nF
Qg Total gate Charge 280
Qgs Gate – Source Charge 106
Qgd Gate – Drain Charge
VGS = 10V
VBus = 100V
ID = 208A 134
nC
Td(on) Tur n-on Delay Ti me 32
Tr Rise Time 64
Td(off) Turn-off Delay Time 88
Tf Fall Time
Inductive switching @ 125°C
VGS = 15V
VBus = 133V
ID = 208A
RG = 2.5Ω 116
ns
Eon Turn-on Switching Energy 1698
Eoff Turn-off Switching Energy
Inductive switching @ 25°C
VGS = 15V, VBus = 133V
ID = 208A, RG = 2.5Ω 1858
µJ
Eon Turn-on Switching Energy 1872
Eoff Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 15V, VBus = 133V
ID = 208A, RG = 2.5Ω 1972
µJ
Source - Drain diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Tc = 25°C 208
IS Continuous Source c urrent
(Body diode)
Tc = 80°C 155 A
VSD Diode Forward Voltage VGS = 0V, IS = - 208A 1.3 V
dv/dt Peak Diode Recovery X 5 V/ns
Tj = 25°C 230
trr Reverse Recovery Time Tj = 125°C 450 ns
Tj = 25°C 1.8
Qrr Reverse Recovery Charge
IS = - 208A
VR = 133V
diS/dt = 200A/µs
Tj = 125°C 6.8
µC
X dv/dt numbers reflect the limitations of the circuit rather than the device itself.
IS ≤ - 208A di/dt ≤ 700A/µs VR ≤ VDSS Tj ≤ 150°C
APTM20AM08FTG
APTM20AM08FTG – Rev 2 July, 2006
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Thermal and package characteristics
Symbol Characteristic Min Typ Max Unit
RthJC Junction to Case Thermal Resistance 0.16 °C/W
VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V
TJ Operating junction temperature range -40 150
TSTG Storage Temperature Range -40 125
TC Operating Case Temperature -40 100
°C
Torque Mounting torque To Heatsink M5 2.5 4.7 N.m
Wt Package Weight 160 g
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic Min Typ Max Unit
R25 Resistance @ 25°C 50 kΩ
B 25/85 T
25 = 298.15 K 3952 K
−
=
TT
B
R
RT
11
exp
25
85/25
25
SP4 Package outline (dimensions in mm)
ALL DIMENSIO NS MARKED " * " ARE T OLERENCED AS :
See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com
T: Thermistor temperature
RT: Thermistor value at T
APTM20AM08FTG
APTM20AM08FTG – Rev 2 July, 2006
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Typical Performance Curve
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.16
0.18
0.00001 0.0001 0.001 0.01 0.1 1 10
rectangular Pulse Duration (Seconds)
Thermal Impedance (°C/W)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
6.5V
7V
7.5V
8V
8.5V
10V
VGS=15V
9V
0
200
400
600
800
1000
1200
1400
0 4 8 1216202428
VDS , Drain to Source Voltage (V)
ID, Drain Current (A)
Low Voltage Output Characteristics Transfert Characteristics
TJ=-55°C
TJ=25°C
TJ=125°C
0
100
200
300
400
500
600
012345678910
VGS, Gate to Source Voltage (V)
ID, Drain Current (A)
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
RDS (on) vs Drain Current
VGS=10 V
VGS=20V
0.8
0.9
1
1.1
1.2
0 50 100 150 200 250 300
ID, Drain Current (A)
RDS(on) Drain to Source ON Resistance
Normalized to
VGS=10V @ 104A
0
50
100
150
200
250
25 50 75 100 125 150
TC, Case Temperature (°C)
ID, DC Drain Current (A)
DC Drain Current vs Case Temperature
APTM20AM08FTG
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0.90
0.95
1.00
1.05
1.10
1.15
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature (°C)
BVDSS
, Drain to Source Breakdown
Volta
g
e
(
Normalized
)
Breakdown Voltage vs Temperature ON resistance vs Temperature
0.0
0.5
1.0
1.5
2.0
2.5
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature (°C)
RDS(on), Drain to Source ON resistance
(Normalized)
VGS=10V
ID= 104A
Threshold Voltage vs Temperature
0.6
0.7
0.8
0.9
1.0
1.1
1.2
-50 -25 0 25 50 75 100 125 150
TC, Case Temperature (°C)
VGS(TH), Threshold Voltage
(Normalized)
Maximum Safe Operating Area
100ms
10ms
1ms
100µs
1
10
100
1000
1 10 100 1000
VDS, Drain to Source Voltage (V)
ID, Drain Current (A)
Single pulse
TJ=150°C
TC=25°C
limited by
RDS on
Ciss
Crss
Coss
100
1000
10000
100000
0 1020304050
VDS, Drain to Source Voltage (V)
C, Capacitance (pF)
Capacitance vs Drain to Source Voltage
VDS=40V
VDS=100V
VDS=160V
0
2
4
6
8
10
12
14
0 40 80 120 160 200 240 280 320
Gate Charge (nC)
VGS, Gate to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
ID=208A
TJ=25°C
APTM20AM08FTG
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Delay Times vs Current
td(on)
td(off)
0
20
40
60
80
100
120
0 50 100 150 200 250 300 350
ID, Drain Current (A)
td(on) and td(off) (ns)
VDS=133V
RG=2.5Ω
TJ=125°C
L=100µH
Rise and Fall times vs Current
tr
tf
0
20
40
60
80
100
120
140
160
0 50 100 150 200 250 300 350
ID, Drain Current (A)
tr and tf (ns)
VDS=133V
RG=2.5Ω
TJ=125°C
L=100µH
Switching Energy vs Current
Eon
Eoff
Eoff
0
1
2
3
4
0 50 100 150 200 250 300 350
ID, Drain Current (A)
Eon and Eoff (mJ)
VDS=133V
RG=2.5Ω
TJ=125°C
L=100µH
Eon
Eoff
1
2
3
4
5
6
0 5 10 15 20 25
Gate Resistance (Ohms)
Switching Energy (mJ)
Switching Energy vs Gate Resistance
VDS=133V
ID=208A
TJ=125°C
L=100µH
Hard
switching
ZCS
ZVS
0
50
100
150
200
250
300
350
25 50 75 100 125 150 175 200
ID, Drain Current (A)
Frequency (kHz)
Operating Frequency vs Drain Curren
t
VDS=133V
D=50%
RG=2.5Ω
TJ=125°C
TC=75°C
TJ=25°C
TJ=150°C
1
10
100
1000
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
IDR, Reverse Drain Current (A)
Source to Drain Diode Forward Voltage
M icrosemi re serves the rig ht to cha nge , witho ut notice, the s pe cificatio ns and informatio n co nta ined he rein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
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