R07DS0320EJ0100 Rev.1.00 Page 1 of 7
May 18, 2011
Preliminary Datasheet
BCR10CM-16LH
Triac
Medium Power Use
Features
• IT (RMS) : 10 A
• VDRM : 800 V
• IFGTI, IRGTI, IRGT III : 50 mA or 35mA(IGT item:1)
• High Commutation
• The Product guarant eed m a ximum junction
temperature 150°C
• Planar Type
Outline
2, 4
1
3
1. T
1
Terminal
2. T
2
Terminal
3. Gate Terminal
4. T
2
Terminal
123
4
RENESAS Package code:
PRSS0004AA-A
(
Package name:
TO-220)
Applications
Switching mode power supply, motor control, heater control, and other general purpose AC power control applications
Maximum Ratings
Voltage class
Parameter Symbol 16 Unit
Repetitive peak off-state voltageNote1 V
DRM 800 V
Non-repetitive peak off-state voltageNote1 V
DSM 960 V
Notes: 1. Gate open.
Parameter Symbol Ratings Unit Conditions
RMS on-state current IT (RMS) 10 A Commercial frequency, sine full wave
360°conduction, Tc = 128°C Note3
Surge on-state current ITSM 100 A 60 Hz sinewave 1 full cycle, peak value,
non-repetitive
I2t for fusion I2t 41.6 A2s Value corresponding to 1 cycle of half
wave 60 Hz, surge on-state current
Peak gate power dissipation PGM 5 W
Average gate power dissipation PG (AV) 0.5 W
Peak gate voltage VGM 10 V
Peak gate current IGM 2 A
Junction Temperature Tj –40 to +150 °C
Storage temperature Tstg –40 to +150 °C
Mass — 2.0 g Typical value
R07DS0320EJ0100
Rev.1.00
May 18, 2011
BCR10CM-16LH Preliminary
R07DS0320EJ0100 Rev.1.00 Page 2 of 7
May 18, 2011
Electrical Characteristics
Parameter Symbol
BCR10CM-16LH-1
(IGT item : 1) BCR10CM-16LH Unit Test conditions
Min. Typ. Max. Min. Typ. Max.
Repetitive peak off-state current IDRM — — 2.0 — — 2.0 mA
Tj = 150°C
VDRM applied
On-state voltage VTM — — 1.5 — — 1.5 V
Tc = 25°C, ITM = 15 A
instantaneous
measurement
Ι V
FGTΙ — — 1.5 — — 1.5 V
ΙΙ V
RGTΙ — — 1.5 — — 1.5 V
Gate trigger voltageNote2
ΙΙΙ V
RGTΙΙΙ — — 1.5 — — 1.5 V
Tj = 25°C, VD = 6 V
RL = 6 Ω, RG = 330 Ω
Ι I
FGTΙ — — 35 — — 50 mA
ΙΙ I
RGTΙ — — 35 — — 50 mA
Gate trigger curentNote2
ΙΙΙ I
RGTΙΙΙ — — 35 — — 50 mA
Tj = 25°C, VD = 6 V
RL = 6 Ω, RG = 330 Ω
Gate non-trigger voltage VGD 0.2 — — 0.2 — — V
Tj = 125°C
VD = 1/2 VDRM
0.1 — — 0.1 — — V
Tj = 150°C
VD = 1/2 VDRM
Thermal resistance Rth (j-c) — — 1.8 — — 1.8 °C/W Junction to caseNote3,4
Critical-rate of decay of on-state
commutating current Note5 (di/dt)c 6 — — 10 — — A/ms
Tj = 125°C
(dv/dt)c < 100 V/μs
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. Case temperature is measured at the T2 tab 1.5 mm apart from the molded case.
4. The contact thermal resistance Rth (c-f) in case of greasi ng is 1.0°C/W.
5. Test conditions of the critical-rate of decay of on-state commutation current are shown in the table below.
Test conditions Commutating voltage and current waveforms
(inductive load)
1. Junction temperature
Tj = 125°C
2. Peak off-state voltage
VD = 400 V
2. Rate of rise of off-state commutating voltage
(dv/dt)c < 100 V/μs
Supply Voltage
Time
Time
Time
Main Current
Main Voltage
(di/dt)c
VD
(dv/dt)c
BCR10CM-16LH Preliminary
R07DS0320EJ0100 Rev.1.00 Page 3 of 7
May 18, 2011
Performance Curves
103
102
101
–40 0 40 80 120 160
Maximum On-State Characteristics
On-State Voltage (V)
On-State Current (A)
Rated Surge On-State Current
Conduction Time (Cycles at 60Hz)
Surge On-State Current (A)
Gate Characteristics
Gate Current (mA)
Gate Voltage (V)
Gate Trigger Voltage vs.
Junction Temperature
Junction Temperature (°C)
Gate Trigger Voltage (Tj = t°C)
Gate Trigger Voltage (Tj = 25°C) × 100 (%)
Gate Trigger Current vs.
Junction Temperature
Junction Temperature (°C)
Gate Trigger Current (Tj = t°C)
Gate Trigger Current (Tj = 25°C) × 100 (%)
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
Conduction Time (Cycles at 60Hz)
Transient Thermal Impedance (°C/W)
4.01.5 2.5 3.50.5 1.0 2.0 3.0
102
101
100
100
0
20
60
80
40
100101102
103
102
101
–40 0 40 80 120 160
Typical Example
Typical Example
101
100
10−1
101102
101
100
10−1
103104
102
102
103
P
GM
= 5W
I
GM
= 2A
V
GM
= 10V
V
GT
= 1.5V
I
FGT I
, I
RGT I
, I
RGT III
0
0.4
1.2
1.6
2.4
2.0
V
GD
= 0.1V
P
G(AV)
=
0.5W
0.8
Tj = 25°C
Tj = 150°C
IFGT I
IRGT I, IRGT III
BCR10CM-16LH Preliminary
R07DS0320EJ0100 Rev.1.00 Page 4 of 7
May 18, 2011
Junction Temperature (°C)
10
3
102
101
–40 0 40 80 120 160
Typical Example
Junction Temperature (°C)
Repetitive Peak Off-State Current (Tj = t°C)
Repetitive Peak Off-State Current (Tj = 25°C) × 100 (%)
Repetitive Peak Off-State Current vs.
Junction Temperature
10
6
104
102
105
103
–40 0 40 80 120 160
Typical Example
0 2 4 6 8 10 12 14 16
On-State Power Dissipation (W)
RMS On-State Current (A)
Maximum On-State Power Dissipation
16
12
6
4
2
14
10
8
0
360° Conduction
Resistive,
inductive loads
Holding Current vs.
Junction Temperature
Holding Current (Tj = t°C)
Holding Current (Tj = 25°C) × 100 (%)
RMS On-State Current (A)
Case Temperature (°C)
Allowable Case Temperature vs.
RMS On-State Current
160
120
100
60
20
016
02 6 10 14
40
80
140
4812
160
120
100
60
20
016
02 6 10 14
40
80
140
4812
Curves apply
regardless of
conduction angle
Resistive,
inductive loads
Natural convection
RMS On-State Current (A)
Ambient Temperature (°C)
Allowable Ambient Temperature vs.
RMS On-State Current
360° Conduction
Resistive,
inductive loads
Curves apply
regardless of
conduction angle
All fins are black painted
aluminum and greased
60 × 60 × t2.3
120 × 120 × t2.3
100 × 100 × t2.3
Allowable Ambient Temperature vs.
RMS On-State Current
Ambient Temperature (°C)
RMS On-State Current (A)
160
120
100
60
20
04.0
0 0.5 1.5 2.5 3.5
40
80
140
1.0 2.0 3.0
Natural convection
No Fins
Curves apply regardless
of conduction angle
Resistive, inductive loads
BCR10CM-16LH Preliminary
R07DS0320EJ0100 Rev.1.00 Page 5 of 7
May 18, 2011
Latching Current (mA)
Latching Current vs.
Junction Temperature
Junction Temperature (°C)
T
2
+, G+
T
2
–, G–Typical Example
T
2
+, G–
Typical Example
Distribution
103
102
101
100
–40 0 40 80 120 160 –40 0 40 80 120 160
Rate of Rise of Off-State Voltage (V/μs)
Breakover Voltage (dv/dt = xV/μs)
Breakover Voltage (dv/dt = 1V/μs) × 100 (%)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=125°C)
10
2
10
3
10
1
10
4
0
20
40
80
60
100
120
160
140
Typical Example
Tj = 125°C
III Quadrant
I Quadrant
Rate of Rise of Off-State Voltage (V/μs)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=150°C)
Commutation Characteristics (Tj=125°C)
Critical Rate of Rise of Off-State
Commutating Voltage (V/μs)
Rate of Decay of On-State
Commutating Current (A/ms)
Commutation Characteristics (Tj=150°C)
Critical Rate of Rise of Off-State
Commutating Voltage (V/μs)
Rate of Decay of On-State
Commutating Current (A/ms)
10
2
10
3
10
1
10
4
10
1
10
0
10
2
10
1
10
0
10
2
10
0
10
1
10
2
10
0
10
1
10
2
0
20
40
80
60
100
120
160
140
Typical Example
Tj = 150°C
Typical Example
Tj = 125°C, I
T
= 4A
τ = 500μs,
V
D
= 200V, f = 3Hz
III Quadrant
I Quadrant
Main Voltage
Main CurrentI
T
(di/dt)c
τ
V
D
Time
Time
(dv/dt)c
III Quadrant
I Quadrant
III Quadrant
I Quadrant
Minimum
Value
(IGTitem1)
Minimum
Value
Main Voltage
Main CurrentI
T
(di/dt)c
τ
V
D
Time
Time
(dv/dt)c
Typical Example
Tj = 150°C, I
T
= 4A
τ = 500μs,
V
D
= 200V, f = 3Hz
Breakover Voltage vs.
Junction Temperature
Junction Temperature (°C)
Breakover Voltage (Tj = t°C)
Breakover Voltage (Tj = 25°C) × 100 (%)
160
100
80
40
20
0
140
60
120
Typical Example
BCR10CM-16LH Preliminary
R07DS0320EJ0100 Rev.1.00 Page 6 of 7
May 18, 2011
C1 = 0.1 to 0.47μF
R1 = 47 to 100Ω
C0 = 0.1μF
R0 = 100Ω
Gate Trigger Characteristics Test Circuits Recommended Circuit Values Around The Triac
Test Procedure I
Test Procedure III
Test Procedure II
330Ω
330Ω
330Ω
C
1
C
0
R
0
R
1
6Ω
6Ω
6V
6V
A
V
A
V
6Ω
6V A
V
Load
Gate Trigger Current (tw)
Gate Trigger Current (DC) × 100 (%)
Gate Current Pulse Width (μs)
Gate Trigger Current vs.
Gate Current Pulse Width
Typical Example
I
RGT III
I
RGT I
I
FGT I
10
0
10
1
10
3
10
2
10
1
10
2
BCR10CM-16LH Preliminary
R07DS0320EJ0100 Rev.1.00 Page 7 of 7
May 18, 2011
Package Dimensions
SC-46 2.0g
MASS[Typ.]
⎯PRSS0004AA-A
RENESAS CodeJEITA Package Code Previous Code
Unit: mm
10.5Max 4.5
1.3
2.542.54
0.8
1.0
φ3.6
2.60.5
4.5Max
12.5Min 16Max
3.8Max
7.0
3.2
Package Name
TO-220
Ordering Information
Orderable Part Number Packing Quantity Remark
BCR10CM-16LH#B00 Bag 100 pcs. Straight type
BCR10CM-16LH-1#B00 Bag 100 pcs. Straight type, IGT item:1
BCR10CM-16LH-A8#B00 Tube 50 pcs. A8 Lead form
BCR10CM-16LH-1A8#B00 Tube 50 pcs. A8 Lead form, IGT item:1
Note: Please confirm the specification ab out the shipping in detail.
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