25C 0D MM 8235605 OOO4511 45 MMSIEG . T-33-/3 NPN Transistor for Powerful AF Output Stages 2 N 3055 STEMENS AKTIENGESELLSCHAF 2 N 3055 is a single diffused NPN silicon transistor in TO 3 case (3 A 2 DIN 41872). The collector is electrically connected to the case. The transistor is particularly suitable for use in powerful AF output stages and in stabilized power supply units. One mica washer and two insulating nipples are provided for the insulated mounting of this transistor ; ona chassis; they are to be ordered separately. 93855 g Type | Ordering code 2N 3055 | 0Q62702-U58 301201 iim 26,2max Approx. weight 18g Dimensions in mm Maximum ratings Coltector-base voltage Vcso 100 Vv Collector-emitter voltage (Vac = 1.5 V; Ie = 10 mA) Voey 90 Vv Collector-emitter voltage (Ree = 100 Q; Ig = 200 mA) Veer 70 V Collector-emitter voltage Vceo 60 Vv Emitter-base voltage Vepo 7 Vv Collector current Ic 15 A Base current Ib 7 A Junction temperature Tj 200 C Storage temperature range Tetg -65 to +200 C Total power dissipation (Tease = 25 C) Prot 115 WwW Thermal resistance Junction to case Rinuc | $1.5 | K/W 2273 A-14 987de a - 25C D MM 8235605 0004912 O MBSIEG s5C 04912 FEB? ~ 25C 04912 TJ~-33-13 2N 3055 STEMENS AKTIENGESELLSCHAF Static characteristics (7.55 = 25 C) Collector cutoff current . re (Veg =30V) Iceo <0.7 mA i Collector cutoff current i (Veey = 100 V; Vag = ~1.5 V) Teev <5 mA Collector cutoff current (Vogy = 100 V; Ver = 1.5 V; Tease = 150C) Icey <30 mA Emitter cutoff current . (Veso = 7 V) Tso <5 mA Collector-emitter breakdown voltage {Ic = 200 mA) Viaryceo | > 60 V Collector-emitter breakdown voltage (> = 100 mA; Vee = -1.5 V) Vcev >90 V Collector-emitter breakdown voltage (Ie = 200 mA; Rag = 100 2) Voer >70 Vv \ Base-emitter voltage Uc = 4A; Vce = 4 V) Vee <1.8 Vv i Collector-emitter saturation voltage i Uc = 4A; Ig = 0.4 A) Veesat <1.1 Vv i, Ue = 10 A; Ig = 3.3 A} Vegeat <8 Vv b DC current gain Ue =4A; Vce =4yV) hee 20 to 70 - I Dynamic characteristics (T,as, = 25 C) i Transition frequency (ic = 1 A) fy > 0.8 MHz i hte cutoff frequency (Jc = 1 A; Vog = 4 V) fate >10 kHz uo f , 958 2274 B-OlZou U4ils UT BB-/3 -STEMENS AKTIENGESELLSCHAF Permissible operating range Ig = (Vee); Tease = 25C: V= 0 665 445 345 240 "5 40 5 10! 5 10V Vie Collector current Ic = f (Vee) Vee = 4-V; Tease = parameter A {common-emitter configuration) 40" ke Tease 25C. 10 2275 B-02 2 N 3055 Total perm. power dissipation versus tamperature W Prot = f (Tease) 150 P tot 100 50 0 0 100 20C rasa DC current gain he = f (Ic) Vee = 4-V: Tease = parameter 10 eg 10 10 107 10 10 10'A 95925C D MM 6235605 0004914 4 MBSIEG 36C 04914 O34 3-/3 SIEMENS AKTIENGESELLSCHAF 2N 3055 Transition frequancy fr = f (Zc) Veg =4V MHz 20 i t 10 05 10 107 107 mA I, 969 2276 B-03