TOSHIBA TLP620(D4)SERIES, TLP62 1(D4)SERIES, TLP750(D4)SERIES TOSHIBA PHOTOCOUPLER TLP620(D4)SERIES, TLP621(D4)SERIES, TLP750(D4)SERIES ATTACHMENT : SPECIFICATIONS FOR VDE0884 OPTION : (D4) Types : TLP620, TLP620-2, TLP620-3, TLP620-4, TLP621, TLP621-2, TLP621-3, TLP621-4, TLP750, TLP751 Type designations for Option : (D4), which are tested under VDE0884 requirements. Ex. : TLP621 (D4-GR-LF2) D4 : VDEG884 option GR : CTR rank LF2 : standard lead bend Note : Use Toshiba standard type number for safety standard application, Ex. TLP621 (D4-GR-LF2) TLP621 VDE0884 ISOLATION CHARACTERISTICS DESCRIPTION SYMBOL RATING | UNIT Application Classification (DIN VDE0109 /12.83, Table 1) for rated mains voltage=300Vims I-IV for rated mains voltage= 600Vims T-T Climatic Classification (DIN IEC68 Teil 1/09.80) 98/1007) | Pollution Degree (DIN VDE0109/ 12.83) 2 _ Maximum Operating Insulation Voltage VIORM 890 Vpk input io output Test Voitage, Method A Vpr=15XVIORM: Type and Sample Test Vpr 1335 Vpk tp=60s, Partial Discharge<5pC Input to output Test Voltage, Method B Vpr=1.875XVIORM, 100% Production Test Vpr 1670 Vpk tp 1e Davtal Thhaeh aver & Enf bp 45, Fabia. 1istiialpe ~ upw Highest Permissible Overvoltage (Transient Overvoltage, tpr=10s) VTR 8000 Vk Safety Limiting Values (Max. permissible ratings in case of fault, also refer to thermal derating curve) Current (Input current Ip, Psi) Ti 200 mA Power (Output or Total Power Dissipation) Pj 500 mw Temperature Tsi 150 C Insulation Resistance at Tsi, VIO =500V Rgj = 10 QO 961 001EBC2 @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specitied onerating ranges as set farth in the most recent oroducte epecitications. Aleo, nleace keen in mind the nrerautions and canditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @ Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with domestic garbage. @ The products described in this document are subiect to foreian exchange and foreign trade control laws. @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted oy implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 1998-03-04 1/3TOSHIBA INSULATION RELATED SPECIFICATIONS TLP620(D4)SERIES, TLP62 1(D4)SERIES, TLP750(D4)SERIES Minimum Creepage Distance (*) | Cr 6.4mm Minimum Clearance (*) Cl 6.4mm Minimum Insulation Thickness ti 0.4mm Comperative Tracking Index CTI 175 (DIN IEC112/ VDE0308, Part 1) (VDE0109/12.83 Group Ila) ((*) in accordance with DIN VDE0109/12.83, Table 2, & 4) (*1) If a printed circuit is incorporated, the creepage distance and clearance may be reduced below this value (e. g. at a standard distance between soldering eye centres of 7.5mm), If this is not permissible, the user shall take suitable measures. (*2) This photocoupler is suitable for safe electrical isolation only within the safety limit data. Maintenance of the safety data shall be ensured by means of protective circuits. VDE Test sign: Marking on product for VDE0884 Marking on packing for VDE0884 Marking Example : 4 pin Type To -- Lot No. lpin indication mark for option (D4) TLP620, 620-2, 620-3, 620-4 TLP621, 621-2, 621-3, 621-4 TLP750, 751 4 | DE NOOA DYE NOGA Ty Vvoo4 TT jvoo4 Others To + Oo s Ol [I+ Lot No, po- TYPE NAME WITHOUT TL TLP___1+- TYPE NAME Ee CTR or [pp Rank Marking ? Oi Cd-+ CTR or Ipp Rank Marking Oo | i mark for option (D4) lpin indication 1998-03-04 2/3TOSHIBA TLP620(D4)SERIES, TLP62 1(D4)SERIES, TLP750(D4)SERIES Figure 1 Partial discharge measurement procedure according to VDE0884 Destructive test for qualification and sampling tests. Method A VINITIAL (6kV) (for type and sampling tests, destructive tests) Vopr (1385V) 1 I I I ty, te =1 to 10s ! r] VIORM (890V) tq, t4 =1s 4 1-44 ~~~. tp (Measuring time for Poy partial discharge) =50s ot t th = 62s ; of HB EP ita tint =10s ity! tini ta! th Figure 2 Partial discharge measurement procedure according to VDEO884 Non-destructive test for 100% inspection. Methed B V Vpr (kV) (for sample test, non- VIORM (820V) destructive test) Pie a tg, t4 =0.1s ! ! tp (Measuring time for partial discharge) =1s th =1.2s 7 tp - t tg th ta! Figure 3 Dependency of maximum safety ratings on ambient temperature moron Ty (mA) 1998-03-04 3/3