2N7000KL/BS170KL Vishay Siliconix New Product N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) VGS(th) (V) rDS(on) (W) 2 @ VGS = 10 V 60 TO-226AA (TO-92) G D 1 0.47 1 0 to 2 1.0 2.5 5 4 @ VGS = 4.5 V S ID (A) 0.33 D TrenchFETr Power MOSFET D ESD Protected: 2000 V APPLICATIONS D Direct Logic-Level Interface: TTL/CMOS D Soild State Relays D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Battery Operated Systems TO-92-18RM (TO-18 Lead Form) Device Marking Front View D 2 "S" 2N 7000KL xxyy G 3 "S" = Siliconix Logo xxyy = Date Code S D 1 Device Marking Front View 2 "S" BS 170KL xxyy 3 "S" = Siliconix Logo xxyy = Date Code Top View Top View Ordering Information: 2N7000KL-TR1 Ordering Information: BS170KL-TR1 100 W G S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 60 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 150_C) Pulsed Drain TA = 25_C TA = 70_C Currenta Power Dissipation Maximum Junction-to-Ambient Operating Junction and Storage Temperature Range ID IDM TA = 25_C TA = 70_C PD Unit V 0.47 0.37 A 1.0 0.8 0.51 W RthJA 156 _C/W TJ, Tstg -55 to 150 _C Notes a. Pulse width limited by maximum junction temperature. Document Number: 72705 S-40247--Rev. A, 16-Feb-04 www.vishay.com 1 2N7000KL/BS170KL Vishay Siliconix New Product SPECIFICATIONSa (TA = 25_C UNLESS OTHERWISE NOTED) Limits Parameter Symbol Test Conditions Min Typ Max V(BR)DSS VGS = 0 V, ID = 10 mA 60 VGS(th) VDS = VGS, ID = 250 mA 1 2.0 2.5 Gate-Body Leakage IGSS VDS = 0 V, VGS = "10 V "1 Zero Gate Voltage Drain Current IDSS VDS = 60 V, VGS = 0 V 1 VDS = 60 V, VGS = 0 V, TJ = 55_C 10 On State Drain Currentb On-State ID(on) D( ) Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Drain Source On Drain-Source On-Resistance Resistanceb Diode Forward Voltage 0.8 VGS = 4.5 V, VDS = 10 V 0.5 mA mA A VGS = 10 V, ID = 0.5 A 1.1 2 VGS = 4.5 V, ID = 0.2 A 1.6 4 gfs VDS = 10 V, ID = 0.5 A 550 VSD IS = 0.3 A, VGS = 0 V 0.87 1.3 0.4 0.6 VDS = 10 V, VGS = 4.5 V ID ^ 0.25 A 0.11 rDS(on) DS( ) Forward Transconductanceb VGS = 10 V, VDS = 7.5 V V W mS V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 0.15 Rg 173 td(on) 3.8 10 Gate Resistance Turn On Time Turn-On VDD = 30 V, RL = 150 W ID ^ 0.2 02A A, VGEN = 10V Rg = 10 W tr td(off) Turn-Off Time tf nC W 4.8 15 12.8 20 9.6 15 ns Notes a. Pulse test: PW v300 ms duty cycle v2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 1.0 6V VGS = 10, 7 V TJ = -55_C I D - Drain Current (A) 5V 0.8 I D - Drain Current (A) Transfer Characteristics 1.2 0.6 4V 0.4 0.2 0.9 25_C 125_C 0.6 0.3 3V 0 0.0 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) www.vishay.com 2 5 0 1 2 3 4 5 6 VGS - Gate-to-Source Voltage (V) Document Number: 72705 S-40247--Rev. A, 16-Feb-04 2N7000KL/BS170KL Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 4.0 On-Resistance vs. Drain Current Capacitance 40 VGS = 0 V 32 3.0 C - Capacitance (pF) r DS(on) - On-Resistance ( W ) 3.5 2.5 2.0 VGS = 4.5 V 1.5 VGS = 10 V 1.0 Ciss 24 16 Coss 8 Crss 0.5 0.0 0.0 0 0.2 0.4 0.6 0.8 0 1.0 5 ID - Drain Current (mA) VDS = 10 V ID = 250 mA 25 VGS = 10 V @ 500 mA 5 4 3 2 1.6 1.2 VGS = 4.5 V @ 200 mA 0.8 0.4 1 0 0.0 20 On-Resistance vs. Junction Temperature 2.0 rDS(on) - On-Resiistance (Normalized) V GS - Gate-to-Source Voltage (V) 6 15 VDS - Drain-to-Source Voltage (V) Gate Charge 7 10 0.1 0.2 0.3 0.4 0.5 0.0 -50 0.6 -25 0 Qg - Total Gate Charge (nC) 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-Source Voltage 5 1000 r DS(on) - On-Resistance ( W ) I S - Source Current (A) VGS = 0 V 100 TJ = 125_C 10 TJ = 25_C TJ = -55_C 3 2 ID = 500 mA ID = 200 mA 1 0 1 0.00 4 0.3 0.6 0.9 1.2 VSD - Source-to-Drain Voltage (V) Document Number: 72705 S-40247--Rev. A, 16-Feb-04 1.5 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) www.vishay.com 3 2N7000KL/BS170KL Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage Variance Over Temperature Single Pulse Power, Junction-to-Ambient 0.4 20 0.2 16 V GS(th) Variance (V) ID = 250 mA Power (W) -0.0 -0.2 12 8 -0.4 TA = 25_C 4 -0.6 -0.8 -50 0 -25 0 25 50 75 100 125 150 0.1 0.01 10 1 100 600 Time (sec) TJ - Junction Temperature (_C) Safe Operating Area 10 IDM Limited Limited by rDS(on) I D - Drain Current (A) 1 1 ms 10 ms 0.1 100 ms ID(on) Limited 0.01 1s 10 s dc TA = 25_C Single Pulse BVDSS Limited 0.001 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA =350_C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 www.vishay.com 4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) 10 100 600 Document Number: 72705 S-40247--Rev. A, 16-Feb-04