FEATURES
DTrenchFETr Power MOSFET
DESD Protected: 2000 V
APPLICATIONS
DDirect Logic-Level Interface: TTL/CMOS
DSoild State Relays
DDrivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
DBattery Operated Systems
2N7000KL/BS170KL
Vishay Siliconix
New Product
Document Number: 72705
S-40247—Rev. A, 16-Feb-04
www.vishay.com
1
N-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (W)VGS(th) (V) ID (A)
60
2 @ VGS = 10 V
1 0 to 2 5
0.47
60 4 @ VGS = 4.5 V 1.0 to 2.5 0.33
TO-226AA
(TO-92)
Top View
S
D
G
1
2
3
Ordering Information: 2N7000KL-TR1
Device Marking
Front View
“S” 2N
7000KL
xxyy
“S” = Siliconix Logo
xxyy = Date Code
TO-92-18RM
(TO-18 Lead Form)
Top View
D
S
G
1
2
3
Ordering Information: BS170KL-TR1
Device Marking
Front View
“S” BS
170KL
xxyy
“S” = Siliconix Logo
xxyy = Date Code
D
S
G
100 W
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 60
V
Gate-Source Voltage VGS "20
V
Continuous Drain Current (TJ = 150
_
C)
TA = 25_C
ID
0.47
Continuous Drain Current (TJ = 150_C) TA = 70_CID0.37 A
Pulsed Drain CurrentaIDM 1.0
Power Dissipation
TA = 25_C
PD
0.8
W
Power Dissipation TA = 70_CPD0.51 W
Maximum Junction-to-Ambient RthJA 156 _C/W
Operating Junction and Storage Temperature Range TJ, Tstg −55 to 150 _C
Notes
a. Pulse width limited by maximum junction temperature.
2N7000KL/BS170KL
Vishay Siliconix New Product
www.vishay.com
2
Document Number: 72705
S-40247—Rev. A, 16-Feb-04
SPECIFICATIONSa (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
Parameter Symbol Test Conditions Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 10 mA60
V
Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA1 2.0 2.5 V
Gate-Body Leakage IGSS VDS = 0 V, VGS = "10 V "1mA
Zero Gate Voltage Drain Current
IDSS
VDS = 60 V, VGS = 0 V 1
mA
Zero Gate Voltage Drain Current IDSS VDS = 60 V, VGS = 0 V, TJ = 55_C10 mA
On State Drain Currentb
ID( )
VGS = 10 V, VDS = 7.5 V 0.8
A
On-State Drain Current
b
ID(on) VGS = 4.5 V, VDS = 10 V 0.5 A
Drain Source On Resistanceb
rDS( )
VGS = 10 V, ID = 0.5 A 1.1 2
W
Drain-Source On-Resistance
b
rDS(on) VGS = 4.5 V, ID = 0.2 A 1.6 4 W
Forward Transconductancebgfs VDS = 10 V, ID = 0.5 A 550 mS
Diode Forward Voltage VSD IS = 0.3 A, VGS = 0 V 0.87 1.3 V
Dynamicb
Total Gate Charge Qg0.4 0.6
Gate-Source Charge Qgs VDS = 10 V, VGS = 4.5 V
ID ^ 0.25 A 0.11 nC
Gate-Drain Charge Qgd
.
0.15
Gate Resistance Rg173 W
Turn On Time
td(on) 3.8 10
Turn-On Time trVDD = 30 V, RL = 150 W
4.8 15
ns
Turn
-
Off Time
td(off)
D
^
0.2
,
GEN
=
10
Rg = 10 W12.8 20
ns
T
urn-
Off Ti
me
tf
9.6 15
Notes
a. Pulse test: PW v300 ms duty cycle v2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.0
0.2
0.4
0.6
0.8
1.0
012345 0123456
Output Characteristics Transfer Characteristics
VDS − Drain-to-Source Voltage (V)
− Drain Current (A)ID
VGS = 10, 7 V
3 V
5 V
4 V
VGS − Gate-to-Source Voltage (V)
− Drain Current (A)ID
TJ = −55_C
125_C
25_C
6 V
1.2
0.9
0.6
0.3
0
2N7000KL/BS170KL
Vishay Siliconix
New Product
Document Number: 72705
S-40247—Rev. A, 16-Feb-04
www.vishay.com
3
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.0
0.4
0.8
1.2
1.6
2.0
−50 −25 0 25 50 75 100 125 150
On-Resistance vs. Junction Temperature
TJ − Junction Temperature (_C)
VGS = 10 V @ 500 mA
VGS = 4.5 V
@ 200 mA
0
1
2
3
4
5
6
7
0.0 0.1 0.2 0.3 0.4 0.5 0.6
VDS = 10 V
ID = 250 mA
Gate Charge
− Gate-to-Source Voltage (V)
Qg − Total Gate Charge (nC)
VGS
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.0 0.2 0.4 0.6 0.8 1.0
On-Resistance vs. Drain Current
ID − Drain Current (mA)
VGS = 4.5 V
VGS = 10 V
− On-Resistance (rDS(on) W)
0
8
16
24
32
40
0 5 10 15 20 25
Capacitance
VDS − Drain-to-Source Voltage (V)
C − Capacitance (pF)
Crss
Coss
Ciss
VGS = 0 V
0
1
2
3
4
5
0246810
On-Resistance vs. Gate-Source Voltage
VGS − Gate-to-Source Voltage (V)
ID = 500 mA
ID = 200 mA
− On-Resistance (rDS(on) W)
1.2 1.5
1
100
1000
0.00 0.3 0.6 0.9
TJ = 25_C
TJ = 125_C
Source-Drain Diode Forward Voltage
VSD − Source-to-Drain Voltage (V)
− Source Current (A)IS
10
TJ = −55_C
VGS = 0 V
rDS(on) − On-Resiistance
(Normalized)
2N7000KL/BS170KL
Vishay Siliconix New Product
www.vishay.com
4
Document Number: 72705
S-40247—Rev. A, 16-Feb-04
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.01
0
1
16
20
100 6000.1
Power (W)
Single Pulse Power, Junction-to-Ambient
Time (sec)
Threshold Voltage Variance Over Temperature
Variance (V)VGS(th)
−0.8
−0.6
−0.4
−0.2
−0.0
0.2
0.4
−50 −25 0 25 50 75 100 125 150
ID = 250 mA
TJ − Junction Temperature (_C)
8
12
4
10
TA = 25_C
Safe Operating Area
VDS − Drain-to-Source Voltage (V)
10
0.1
0.1 1 10 100
0.001
1
1 ms
− Drain Current (A)ID
0.01
Limited by rDS(on)
TA = 25_C
Single Pulse
10 ms
100 ms
dc
IDM Limited
ID(on)
Limited
BVDSS Limited
10 s
1 s
10−310−21 10 60010−1
10−4100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration (sec)
Normalized Effective Transient
Thermal Impedance
1. Duty Cycle, D =
2. Per Unit Base = RthJA =350_C/W
3. TJM − TA = PDMZthJA(t)
t1
t2
t1
t2
Notes:
4. Surface Mounted
PDM