© Semiconductor Components Industries, LLC, 2009
December, 2009 Rev. 11
1Publication Order Number:
MBR1060/D
MBR1060
SWITCHMODEt
Power Rectifiers
Features
GuardRing for Stress Protection
Low Forward Voltage
175°C Operating Junction Temperature
Epoxy Meets UL 94 V0 @ 0.125 in
Low Power Loss/High Efficiency
High Surge Capacity
Low Stored Charge Majority Carrier Conduction
PbFree Packages are Available*
Mechanical Characteristics
Case: Epoxy, Molded
Weight: 1.9 Grams (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
ESD Rating: Human Body Model = 3B
Machine Model = C
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
SCHOTTKY BARRIER
RECTIFIERS
10 AMPERES, 60 VOLTS
31, 4
TO220AC
CASE 221B
PLASTIC
3
4
1
MARKING
DIAGRAM
AY WWG
B1060
KA
Device Package Shipping
ORDERING INFORMATION
MBR1060 TO220 50 Units/Rail
MBR1060G TO220
(PbFree)
50 Units/Rail
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A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
B1060 = Device Code
KA = Diode Polarity
MBR1060
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2
MAXIMUM RATINGS
Rating Symbol MBR1060 Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
60 V
Average Rectified Forward Current (Rated VR) TC = 133°C IF(AV) 10 A
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz) TC = 133°C
IFRM 20 A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
IFSM 150 A
Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz) IRRM 0.5 A
Operating Junction Temperature (Note 1) TJ*65 to +175 °C
Storage Temperature Tstg *65 to +175 °C
Voltage Rate of Change (Rated VR) dv/dt 10,000 V/ms
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Maximum Thermal Resistance, JunctiontoCase RqJC 2.0 °C/W
Maximum Thermal Resistance, JunctiontoAmbient RqJA 60 °C/W
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 2)
(iF = 10 Amps, TC = 125°C)
(iF = 10 Amps, TC = 25°C)
(iF = 20 Amps, TC = 125°C)
(iF = 20 Amps, TC = 25°C)
vF
0.7
0.8
0.85
0.95
V
Maximum Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, TC = 125°C)
(Rated dc Voltage, TC = 25°C)
iR
22
0.10
mA
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
MBR1060
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3
Figure 1. Typical Forward Voltage Figure 2. Typical Reverse Current
Figure 3. Typical Current Derating, Case Figure 4. Typical Current Derating, Ambient
Figure 5. Forward Power Dissipation
0.60
vF, INSTANTANEOUS VOLTAGE (VOLTS)
20
50
10
2.0 4.00
IF(AV), AVERAGE CURRENT (AMPS)
10
4.0
3.0
2.0
1.0
0
3.0
iF, INSTANTANEOUS FORWARD CURRENT (AMPS)
5.0
3.0
0.2 0.4 0.8
P
5.0 106.0
7.0
1.0
0.5
1.0
1.0 7.0 8.0 9.0
5.0
6.0
TJ = 25°C
150°C
, AVERAGE POWER DISSIPATION (WATTS)
F(AV)
SQUARE WAVE
dc
TA = 25°C
125°C100°C
0.50.1 0.3 0.7 0.9
9.0
8.0
IPK/IAV = p
IPK/IAV = 5.0
IPK/IAV = 10
IPK/IAV = 20
VR, REVERSE VOLTAGE (VOLTS)
0
I
20 40 60 80
0.1
1.0
, REVERSE CURRENT (mA)
R
10
TJ = 150°C
125°C
100°C
0.01
25°C
100
0.0001
0.001
80
TC, CASE TEMPERATURE (°C)
15
0
I
100 120 140 160
, AVERAGE FORWARD CURRENT (AMPS)
F(AV)
SQUARE WAVE
dc
10
20
RATED VOLTAGE APPLIED
RqJC = 2°C/W
180
5.0
TA, AMBIENT TEMPERATURE (°C)
200
20
0
40
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
60 80 160
dc
15
10
100 120 140
RATED VOLTAGE
APPLIED
SQUARE WAVE
dc
(HEATSINK)
RqJA = 16°C/W
(NO HEATSINK)
RqJA = 60°C/W
5.0
180
MBR1060
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4
PACKAGE DIMENSIONS
TO220
CASE 221B04
ISSUE E
B
R
J
D
G
L
H
QT
U
A
K
C
S
4
13
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.595 0.620 15.11 15.75
B0.380 0.405 9.65 10.29
C0.160 0.190 4.06 4.82
D0.025 0.035 0.64 0.89
F0.142 0.161 3.61 4.09
G0.190 0.210 4.83 5.33
H0.110 0.130 2.79 3.30
J0.014 0.025 0.36 0.64
K0.500 0.562 12.70 14.27
L0.045 0.060 1.14 1.52
Q0.100 0.120 2.54 3.04
R0.080 0.110 2.04 2.79
S0.045 0.055 1.14 1.39
T0.235 0.255 5.97 6.48
U0.000 0.050 0.000 1.27
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
F
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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MBR1060/D
SWITCHMODE is a trademark of Semiconductor Components Industries, LLC.
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