PD - 97101 IRGP4065DPbF PDP TRENCH IGBT Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery Circuits in PDP Applications TM) l Low VCE(on) and Energy per Pulse (EPULSE for Improved Panel Efficiency l High Repetitive Peak Current Capability l Lead Free Package Key Parameters VCE min VCE(ON) typ. @ IC = 70A IRP max @ TC= 25C c TJ max 300 1.75 205 150 C V V A C C E G G C E n-channel G G ate TO-247AC C C ollector E E m itter Description This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel efficiency. Additional features are 150C operating junction temperature and high repetitive peak current capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP applications. Absolute Maximum Ratings Max. Units VGE Gate-to-Emitter Voltage 30 V IC @ TC = 25C Continuous Collector Current, VGE @ 15V 70 A Parameter IC @ TC = 100C Continuous Collector, VGE @ 15V 40 IRP @ TC = 25C Repetitive Peak Current c 205 PD @TC = 25C Power Dissipation 160 PD @TC = 100C Power Dissipation 63 W/C C W Linear Derating Factor 1.3 TJ Operating Junction and -40 to + 150 TSTG Storage Temperature Range 300 Soldering Temperature for 10 seconds Mounting Torque, 6-32 or M3 Screw 10lbxin (1.1Nxm) N Thermal Resistance Parameter RJC (IGBT) RJC (Diode) RCS RJA www.irf.com Thermal Resistance Junction-to-Case-(each IGBT) d Thermal Resistance Junction-to-Case-(each Diode) d Case-to-Sink (flat, greased surface) Junction-to-Ambient (typical socket mount) d Weight Typ. Max. Units --- 1.45 0.24 --- 6.0 (0.21) 0.80 2.5 --- 40 --- C/W g (oz) 1 6/13/06 IRGP4065DPbF Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Min. BVCES VCES/TJ Collector-to-Emitter Breakdown Voltage Breakdown Voltage Temp. Coefficient VCE(on) Static Collector-to-Emitter Voltage VGE(th) VGE(th)/TJ ICES Gate Threshold Voltage Gate Threshold Voltage Coefficient Collector-to-Emitter Leakage Current IGES Gate-to-Emitter Forward Leakage Gate-to-Emitter Reverse Leakage Forward Transconductance Total Gate Charge Gate-to-Collector Charge Turn-On delay time Rise time Turn-Off delay time Fall time Turn-On delay time Rise time Turn-Off delay time Fall time 300 --- --- --- --- --- --- 2.6 --- --- --- --- --- --- --- --- -- -- -- -- -- -- -- -- Shoot Through Blocking Time 100 310 --- --- 875 --- --- 975 --- gfe Qg Qgc td(on) tr td(off) tf td(on) tr td(off) tf tst EPULSE Energy per Pulse Conditions Typ. Max. Units --- 0.23 1.20 1.35 1.75 2.35 2.00 --- -11 2.0 50 --- --- 26 62 20 30 26 170 160 30 28 250 --- --- 1.40 --- 2.10 --- --- 5.0 --- 25 --- 100 -100 --- --- --- -- -- -- -- -- -- -- -- --- Ciss Coss Crss LC Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Collector Inductance --- --- --- --- 2200 110 55 5.0 --- --- --- --- LE Internal Emitter Inductance --- 13 --- V V/C V VGE = 0V, ICE = 1 mA Reference to 25C, ICE = 1mA VGE = 15V, ICE = 25A VGE = 15V, ICE = 40A VGE = 15V, ICE = 70A VGE = 15V, ICE = 120A VGE = 15V, ICE = 70A, TJ = 150C VCE = VGE, ICE = 500A e e e e V mV/C A VCE = 300V, VGE = 0V VCE = 300V, VGE = 0V, TJ = 150C nA VGE = 30V VGE = -30V VCE = 25V, ICE = 25A S nC VCE = 200V, IC = 25A, VGE = 15V e ns IC = 25A, VCC = 180V RG = 10, L=200H, LS= 150nH TJ = 25C ns IC = 25A, VCC = 180V RG = 10, L=200H, LS= 150nH TJ = 150C ns J pF nH VCC = 240V, VGE = 15V, RG= 5.1 L = 220nH, C= 0.40F, VGE = 15V VCC = 240V, RG= 5.1, TJ = 25C L = 220nH, C= 0.40F, VGE = 15V VCC = 240V, RG= 5.1, TJ = 100C VGE = 0V VCE = 30V = 1.0MHz, See Fig.13 Between lead, 6mm (0.25in.) from package and center of die contact Diode Characteristics @ TJ = 25C (unless otherwise specified) Parameter IF(AV) IFSM VF Average Forward Current at TC=155C Non Repetitive Peak Surge Current Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Irr Peak Recovery Current Notes: Half sine wave with duty cycle = 0.25, ton=1sec. R is measured at TJ of approximately 90C. 2 Min. Typ. Max. Units --- --- 8.0 A --- --- --- --- --- --- --- --- --- --- --- 1.0 0.83 --- 27 40 30 106 2.2 5.3 100 1.25 1.0 35 --- --- --- --- --- --- A V ns nC A Conditions TJ = 155C, PW = 6.0ms half sine wave IF = 8A IF = 8A, TJ = 125C IF = 1A, di/dt = -50A/s, VR =30V TJ = 25C TJ = 125C IF = 8A TJ = 25C di/dt = 200A/s TJ = 125C VR = 200V TJ = 25C TJ = 125C Pulse width 400s; duty cycle 2%. www.irf.com IRGP4065DPbF 200 200 TOP 160 V = 18V GE V = 15V GE V = 12V GE V = 10V GE V = 8.0V GE V = 6.0V GE 120 BOTTOM TOP ICE (A) ICE (A) 160 80 120 BOTTOM 80 40 40 0 0 0 2 4 6 8 10 12 14 16 0 2 4 6 VCE (V) 8 10 12 14 16 VCE (V) Fig 1. Typical Output Characteristics @ 25C Fig 2. Typical Output Characteristics @ 75C 360 280 TOP 200 TOP V = 18V GE V = 15V GE V = 12V GE V = 10V GE V = 8.0V GE V = 6.0V GE 240 BOTTOM V = 18V GE V = 15V GE V = 12V GE V = 10V GE V = 8.0V GE V = 6.0V GE 320 280 BOTTOM 240 160 ICE (A) ICE (A) V = 18V GE V = 15V GE V = 12V GE V = 10V GE V = 8.0V GE V = 6.0V GE 120 200 160 120 80 80 40 40 0 0 0 2 4 6 8 10 12 14 0 16 2 4 Fig 3. Typical Output Characteristics @ 125C 8 10 12 14 16 Fig 4. Typical Output Characteristics @ 150C 600 20 IC = 25A 500 15 400 TJ = 25C TJ = 150C 300 VCE (V) ICE, Collector-to-Emitter Current (A) 6 VCE (V) VCE (V) T J = 25C T J = 150C 10 200 5 100 0 0 0 5 10 15 VGE, Gate-to-Emitter Voltage (V) Fig 5. Typical Transfer Characteristics www.irf.com 20 0 5 10 15 20 VGE (V) Fig 6. VCE(ON) vs. Gate Voltage 3 IRGP4065DPbF 80 220 Repetitive Peak Current (A) IC, Collector Current (A) 60 50 40 30 20 180 160 140 120 100 80 60 40 10 20 0 0 0 25 50 75 100 125 150 25 T C, Case Temperature (C) 75 100 125 150 Fig 8. Typical Repetitive Peak Current vs. Case Temperature 1000 1000 V CC = 240V L = 220nH C = 0.4F 900 L = 220nH C = variable 100C Energy per Pulse (J) 900 800 25C 700 600 500 100C 800 700 25C 600 500 400 300 200 400 160 170 180 190 200 210 220 150 160 170 180 190 200 210 220 230 240 230 VCE, Collector-to-Emitter Voltage (V) IC, Peak Collector Current (A) Fig 9. Typical EPULSE vs. Collector Current 1400 Fig 10. Typical EPULSE vs. Collector-to-Emitter Voltage 1000 OPERATION IN THIS AREA LIMITED BY V CE(on) V CC = 240V L = 220nH t = 1s half sine 1200 C= 0.4F 1000 10sec 100 800 IC (A) Energy per Pulse (J) 50 Case Temperature (C) Fig 7. Maximum Collector Current vs. Case Temperature Energy per Pulse (J) ton= 1s Duty cycle = 0.25 Half Sine Wave 200 70 C= 0.3F 600 100sec 10 1msec C= 0.2F 400 200 1 25 50 75 100 125 TJ, Temperature (C) Fig 11. EPULSE vs. Temperature 4 150 1 10 100 1000 VCE (V) Fig 12. Forrward Bias Safe Operating Area www.irf.com IRGP4065DPbF 100000 VGE, Gate-to-Emitter Voltage (V) IC = 25A Coes = Cce + Cgc 10000 Capacitance (pF) 25 VGS = 0V, f = 1 MHZ C ies = C ge + C gd , C ce SHORTED Cres = C gc Cies 1000 100 Coes Cres 20 VCE = 240V VCE = 200V VCE = 150V 15 10 5 0 10 0 50 100 150 200 250 0 300 10 20 30 40 50 60 70 80 Q G, Total Gate Charge (nC) VCE, Collector-toEmitter-Voltage(V) Fig 14. Typical Gate Charge vs. Gate-to-Emitter Voltage Fig 13. Typical Capacitance vs. Collector-to-Emitter Voltage 1 Thermal Response ( Z thJC ) D = 0.50 0.20 0.1 0.10 R1 R1 0.05 J 0.02 0.01 0.01 J 1 1 R2 R2 2 R3 R3 3 2 C 3 Ci= i/Ri Ci i/Ri 1E-005 0.0001 0.382 0.001707 0.271 0.014532 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 Ri (C/W) i (sec) 0.146 0.000131 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case (IGBT) thJC (C/W) 10 Thermal Impedance Z 1 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 PDM t1 0.1 t2 Single Pulse (Thermal Resistance) 0.01 0.00001 Notes: 1. Duty factor D = t1/ t2 . 2. Peak Tj = Pdm x ZthJC + Tc 0.0001 0.001 0.01 0.1 t1, Rectangular Pulse Duration (Seconds) 1 . 10 Fig 16. Maximum Effective Transient Thermal Impedance, Junction-to-Case (DIODE) www.irf.com 5 IRGP4065DPbF 100 If = 8A, Tj = 125C trr ( ns ) IF, Instantaneous Forward Current (A) 100 10 Tj = 125C Tj = 25C If = 8A, Tj = 25C 1 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 10 100 VFM, Forward Voltage Drop (V) 1000 di F /dt (A/s ) Fig. 18 - Typical Reverse Recovery vs. di F /dt Fig. 17 - Typical Forward Voltage Drop Characteristics Qrr ( nC ) 1000 If = 8A, Tj = 125C 100 If = 8A, Tj = 25C Fig.20 - Switching Loss Circuit A RG C DRIVER L 10 100 1000 di F /dt (A/s ) VCC Fig. 19- Typical Stored Charge vs. di F /dt VCE B RG Ipulse DUT Energy IC Current Fig 21a. tst and EPULSE Test Circuit Fig 21b. tst Test Waveforms PULSE A L 0 PULSE B VCC DUT 1K tST Fig 21c. EPULSE Test Waveforms 6 Fig. 22 - Gate Charge Circuit (turn-off) www.irf.com IRGP4065DPbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information EXAMPLE: T HIS IS AN IRFPE30 WIT H ASS EMBLY LOT CODE 5657 AS SEMBLED ON WW 35, 2001 IN T HE ASS EMBLY LINE "H" Note: "P" in as sembly line pos ition indicates "Lead-Free" INT ERNATIONAL RECTIFIER LOGO AS S EMBLY LOT CODE PART NUMBER IRFPE30 56 135H 57 DATE CODE YEAR 1 = 2001 WEEK 35 LINE H TO-247AC package is not recommended for Surface Mount Application. The specifications set forth in this data sheet are the sole and exclusive specifications applicable to the identified product, and no specifications or features are implied whether by industry custom, sampling or otherwise. We qualify our products in accordance with our internal practices and procedures, which by their nature do not include qualification to all possible or even all widely used applications. Without Data and specifications subject to change without notice. limitation, we have not qualified our product for medical use or applications involving hi-reliability applications. Customers are This product has been designed for the Industrial market. Qualification Standards can be found on IR's Web site. encouraged to and responsible for qualifying product to their own use and their own application environments, especially where particular features are critical to operational performance or safety. Please contact your IR representative if you have specific design or use requirements or for further information. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.06/06 www.irf.com 7 Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/