IRGP4065DPBF - International Rectifier

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6/13/06

IRGP4065DPbF

Description

This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced

trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel

efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current

capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP

applications.

Features

l Advanced Trench IGBT Technology

l Optimized for Sustain and Energy Recovery

Circuits in PDP Applications

l Low VCE(on) and Energy per Pulse (EPULSETM)

for Improved Panel Efficiency

l High Repetitive Peak Current Capability

l Lead Free Package

PDP TRENCH IGBT

VCE min 300 V

VCE(ON) typ. @ IC = 70A 1.75 V

IRP max @ TC= 25°C c205 A

TJ max 150 °C

Key Parameters

GC E

Gate Collector Em itter

TO-247AC

n-channel

PD - 97101

Absolute Maximum Ratings

Parameter Units

VGE Gate-to-Emitter Voltage V

IC @ TC = 25°C Continuous Collector Current, VGE @ 15V A

IC @ TC = 100°C Continuous Collector, VGE @ 15V

IRP @ TC = 25°C Repetitive Peak Current c

PD @TC = 25°C Power Dissipation W

PD @TC = 100°C Power Dissipation

Linear Derating Factor W/°C

TJ Operating Junction and °C

TSTG Storage Temperature Range

Soldering Temperature for 10 seconds

Mounting Torque, 6-32 or M3 Screw N

Thermal Resistance

Parameter Typ. Max. Units

RθJC (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) d––– 0.80

RθJC (Diode) Thermal Resistance Junction-to-Case-(each Diode) d1.45 2.5

RθCS Case-to-Sink (flat, greased surface) 0.24 ––– °C/W

RθJA Junction-to-Ambient (typical socket mount) d––– 40

Weight 6.0 (0.21) ––– g (oz)

205

300

-40 to + 150

10lbxin (1.1Nxm)

160

1.3

Max.

±30

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Notes:

 Half sine wave with duty cycle = 0.25, ton=1µsec.

 Rθ is measured at TJ of approximately 90°C.

 Pulse width ≤ 400µs; duty cycle ≤ 2%.

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units

BVCES Collector-to-Emitter Breakdown Voltage 300 ––– ––– V

∆ΒVCES/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.23 ––– V/°C

––– 1.20 1.40

––– 1.35 –––

––– 1.75 2.10 V

––– 2.35 –––

––– 2.00 –––

VGE

(

)

Gate Threshold Voltage 2.6 ––– 5.0 V

∆VGE

(

)

/∆TJGate Threshold Voltage Coefficient ––– -11 ––– mV/°C

ICES Collector-to-Emitter Leakage Current ––– 2.0 25 µA

––– 50 –––

IGES Gate-to-Emitter Forward Leakage ––– ––– 100 nA

Gate-to-Emitter Reverse Leakage ––– ––– -100

gfe Forward Transconductance ––– 26 ––– S

Total Gate Charge ––– 62 ––– nC

cGate-to-Collector Charge ––– 20 –––

td(on) Turn-On delay time — 30 — IC = 25A, VCC = 180V

trRise time — 26 — ns RG = 10Ω, L=200µH, LS= 150nH

td(off) Turn-Off delay time — 170 — TJ = 25°C

tfFall time — 160 —

td(on) Turn-On delay time — 30 — IC = 25A, VCC = 180V

trRise time — 28 — ns RG = 10Ω, L=200µH, LS= 150nH

td(off) Turn-Off delay time — 250 — TJ = 150°C

tfFall time — 310 —

tst Shoot Through Blocking Time 100 ––– ––– ns

EPULSE Energy per Pulse µJ

Ciss Input Capacitance ––– 2200 –––

Coss Output Capacitance ––– 110 ––– pF

Crss Reverse Transfer Capacitance ––– 55 –––

LCInternal Collector Inductance ––– 5.0 ––– Between lead,

nH 6mm (0.25in.)

LEInternal Emitter Inductance ––– 13 ––– from package

Diode Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units

(

)

Average Forward Current at

TC=155°C

IFSM Non Repetitive Peak Surge Current ––– ––– 100 A TJ = 155°C, PW = 6.0ms half sine wave

VFForward Voltage ––– 1.0 1.25 V

––– 0.83 1.0

trr Reverse Recovery Time ––– ––– 35 ns

––– 27 ––– TJ = 25°C

––– 40 ––– TJ = 125°C IF = 8A

Qrr Reverse Recovery Charge ––– 30 ––– nC TJ = 25°C di/dt = 200A/µs

––– 106 ––– TJ = 125°C VR = 200V

Irr Peak Recovery Current ––– 2.2 ––– A TJ = 25°C

––– 5.3 ––– TJ = 125°C

Static Collector-to-Emitter Voltage

VCE(on)

VGE = 15V, ICE = 70A, TJ = 150°C

––– 875 –––

VCE = VGE, ICE = 500µA

VCE = 300V, VGE = 0V

VCE = 300V, VGE = 0V, TJ = 150°C

––– 975 –––

VCE = 25V, ICE = 25A

VCE = 200V, IC = 25A, VGE = 15V

VCC = 240V, VGE = 15V, RG= 5.1Ω

VCC = 240V, RG= 5.1Ω, TJ = 25°C

L = 220nH, C= 0.40µF, VGE = 15V

VCC = 240V, RG= 5.1Ω, TJ = 100°C

and center of die contact

VGE = 30V

VGE = -30V

ƒ = 1.0MHz, See Fig.13

VGE = 0V

L = 220nH, C= 0.40µF, VGE = 15V

Conditions

VGE = 0V, ICE = 1 mA

Reference to 25°C, ICE = 1mA

VGE = 15V, ICE = 120A

VGE = 15V, ICE = 25A

VGE = 15V, ICE = 70A

VGE = 15V, ICE = 40A

IF = 8A

IF = 8A, TJ = 125°C

IF = 1A, di/dt = -50A/µs, VR =30V

VCE = 30V

Conditions

––– ––– 8.0 A

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Fig 1. Typical Output Characteristics @ 25°C

Fig 3. Typical Output Characteristics @ 125°C Fig 4. Typical Output Characteristics @ 150°C

Fig 2. Typical Output Characteristics @ 75°C

Fig 5. Typical Transfer Characteristics Fig 6. VCE(ON) vs. Gate Voltage

0246810121416

VCE (V)

120

160

200

240

280

320

360

ICE (A)

TOP VGE = 18V

VGE = 15V

VGE = 12V

VGE = 10V

VGE = 8.0V

BOTTOM VGE = 6.0V

0246810121416

VCE (V)

120

160

200

240

280

ICE (A)

TOP VGE = 18V

VGE = 15V

VGE = 12V

VGE = 10V

VGE = 8.0V

BOTTOM VGE = 6.0V

0 5 10 15 20

VGE (V)

VCE (V)

TJ = 25°C

TJ = 150°C

IC = 25A

0246810121416

VCE (V)

120

160

200

ICE (A)

TOP VGE = 18V

VGE = 15V

VGE = 12V

VGE = 10V

VGE = 8.0V

BOTTOM VGE = 6.0V

TOP VGE = 18V

VGE = 15V

VGE = 12V

VGE = 10V

VGE = 8.0V

BOTTOM VGE = 6.0V

0246810121416

VCE (V)

120

160

200

ICE (A)

0 5 10 15 20

VGE, Gate-to-Emitter Voltage (V)

100

200

300

400

500

600

ICE, Collector-to-Emitter Current (A)

TJ = 25°C

TJ = 150°C

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Fig 7. Maximum Collector Current vs. Case Temperature Fig 8. Typical Repetitive Peak Current vs. Case Temperature

Fig 10. Typical EPULSE vs. Collector-to-Emitter Voltage

Fig 9. Typical EPULSE vs. Collector Current

Fig 11. EPULSE vs. Temperature Fig 12. Forrward Bias Safe Operating Area

25 50 75 100 125 150

TJ, Temperature (ºC)

200

400

600

800

1000

1200

1400

Energy per Pulse (µJ)

VCC

= 240V

L = 220nH

t = 1µs half sine C= 0.4µF

C= 0.3µF

C= 0.2µF

150 160 170 180 190 200 210 220 230 240

VCE, Collector-to-Emitter Voltage (V)

200

300

400

500

600

700

800

900

1000

Energy per Pulse (µJ)

L = 220nH

C = 0.4µF

100°C

25°C

160 170 180 190 200 210 220 230

IC, Peak Collector Current (A)

400

500

600

700

800

900

1000

Energy per Pulse (µJ)

VCC = 240V

L = 220nH

C = variable 100°C

25°C

1 10 100 1000

VCE (V)

100

1000

IC (A)

OPERATION IN THIS AREA

LIMITED BY VCE(on)

1msec

10µsec

100µsec

0 25 50 75 100 125 150

TC, Case Temperature (°C)

IC, Collector Current (A)

25 50 75 100 125 150

Case Temperature (°C)

100

120

140

160

180

200

220

Repetitive Peak Current (A)

ton= 1µs

Duty cycle = 0.25

Half Sine Wave

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Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case (IGBT)

1E-006 1E-005 0.0001 0.001 0.01 0.1 1

t1 , Rectangular Pulse Duration (sec)

0.001

0.01

0.1

Thermal Response ( Z thJC )

0.20

0.10

D = 0.50

0.02

0.01

0.05

SINGLE PULSE

( THERMAL RESPONSE )

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

Ri (°C/W) τi (sec)

0.146 0.000131

0.382 0.001707

0.271 0.014532

τJ

τ1

τ2

τ2τ3

τ3

R1R2

R2R3

τC

Ci τi/Ri

Ci= τi/Ri

Fig 13. Typical Capacitance vs. Collector-to-Emitter Voltage Fig 14. Typical Gate Charge vs. Gate-to-Emitter Voltage

050 100 150 200 250 300

VCE, Collector-toEmitter-Voltage(V)

100

1000

10000

100000

Capacitance (pF)

Cies

Coes

Cres

VGS = 0V, f = 1 MHZ

Cies = Cge + Cgd, C ce SHORTED

Cres = Cgc

Coes = Cce + Cgc

0 1020304050607080

Q G, Total Gate Charge (nC)

VGE, Gate-to-Emitter Voltage (V)

IC = 25A

VCE = 240V

VCE = 200V

VCE = 150V

Fig 16. Maximum Effective Transient Thermal Impedance, Junction-to-Case (DIODE)

0.01

0.1

0.00001 0.0001 0.001 0.01 0.1 1 10

Single Pulse

(Thermal Resistance)

D = 0.50

D = 0.20

D = 0.10

D = 0.05

D = 0.02

D = 0.01

Notes:

1. Duty factor D = t1/ t2 .

2. Peak Tj = Pdm x ZthJC + Tc .

Thermal Impedance Z thJC (°C/W)

t1, Rectangular Pulse Duration (Seconds)

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Fig. 17 - Typical Forward Voltage Drop Characteristics

Fig. 19- Typical Stored Charge vs. di

/dt

Q r r ( n C )

/dt (A/µs )

100

1000

100 1000

If = 8A, Tj = 25˚C

If = 8A, Tj = 125˚C

Fig. 18 - Typical Reverse Recovery vs. di

/dt

t r r ( n s )

/dt (A/µs )

100

100 1000

If = 8A, Tj = 25˚C

If = 8A, Tj = 125˚C

Fig 21a. tst and EPULSE Test Circuit

Fig 21b. tst Test Waveforms

Fig 21c. EPULSE Test Waveforms

VCC

DUT

Fig. 22 - Gate Charge Circuit (turn-off)

DRI VER

DUT

VCC

Ipulse

Energy

Current

PULSE A

PULSE B

Fig.20 - Switching Loss Circuit

0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

VFM, Forward Voltage Drop (V)

100

IF, Instantaneous Forward Current (A)

Tj = 125°C

Tj = 25°C

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Data and specifications subject to change without notice.

This product has been designed for the Industrial market.

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.06/06

The specifications set forth in this data sheet are the sole and

exclusive specifications applicable to the identified product,

and no specifications or features are implied whether by

industry custom, sampling or otherwise. We qualify our

products in accordance with our internal practices and

procedures, which by their nature do not include qualification to

all possible or even all widely used applications. Without

limitation, we have not qualified our product for medical use or

applications involving hi-reliability applications. Customers are

encouraged to and responsible for qualifying product to their

own use and their own application environments, especially

where particular features are critical to operational

performance or safety. Please contact your IR representative if

you have specific design or use requirements or for further

information.

TO-247AC package is not recommended for Surface Mount Application.

TO-247AC Part Marking Information

TO-247AC Package Outline Dimensions are shown in millimeters (inches)

YEAR 1 = 2001

DAT E CODE

PART NUMBER

INTERNATIONAL

LOGO

RECTIFIER

ASSEMBLY

56 57

IRFPE30

135H

LINE H

i ndicates "L ead-F ree" WE E K 35

LOT CODE

IN THE ASSEMBLY LINE "H"

AS SEMBLED ON WW 35, 2001

Note: "P" in as sembly line pos ition

EXAMPLE:

WIT H AS S E MB L Y

THIS IS AN IRFPE30

LOT CODE 5657

Note: For the most current drawings please refer to the IR website at:

http://www.irf.com/package/