1 2 TO -24 7 1 - Cathode 2 - Anode Back of Case - Cathode APT100S20B(G) 200V 120A *G Denotes RoHS Compliant, Pb Free Terminal Finish. 1 2 HIGH VOLTAGE SCHOTTKY DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS * Parallel Diode * Ultrafast Recovery Times * Soft Recovery Characteristics * Low Losses * * * * * -Switchmode Power Supply -Inverters Free Wheeling Diode -Motor Controllers -Converters Snubber Diode Uninterruptible Power Supply (UPS) 48 Volt Output Rectifiers High Speed Rectifiers * Popular TO-247 Package or Surface Mount D3PAK Package * Low Forward Voltage * High Blocking Voltage * Low Leakage Current MAXIMUM RATINGS Symbol VR * Increased System Power Density APT100S20B(G) UNIT Maximum D.C. Reverse Voltage VRWM Maximum Working Peak Reverse Voltage IF(AV) Maximum Average Forward Current TJ,TSTG * Higher Reliability Systems Characteristic / Test Conditions Maximum Peak Repetitive Reverse Voltage IFSM * Cooler Operation All Ratings: TC = 25C unless otherwise specified. VRRM IF(RMS) * Low Noise Switching 1 200 120 (TC = 125C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Volts 1 318 Amps 1000 Non-Repetitive Forward Surge Current (TJ = 45C, 8.3ms) -55 to 150 Operating and StorageTemperature Range TL Lead Temperature for 10 Sec. 300 EVAL Avalanche Energy (2A, 50mH) 100 C mJ STATIC ELECTRICAL CHARACTERISTICS Forward Voltage TYP MAX IF = 100A .89 .95 IF = 200A 1.06 IF = 100A, TJ = 125C IRM Maximum Reverse Leakage Current CT Junction Capacitance, VR = 200V Volts .76 VR = 200V 2 VR = 200V, TJ = 125C Microsemi Website - http://www.microsemi.com UNIT 40 470 mA pF 7-2006 VF MIN 053-6021 Rev C Symbol APT100S20B(G) DYNAMIC CHARACTERISTICS Symbol Characteristic Test Conditions trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM MIN TYP - 70 ns - 230 nC - 6 - 110 ns - 690 nC - 11 - 95 ns - 1750 nC - 32 Amps MIN TYP IF = 100A, diF/dt = -200A/s VR = 133V, TC = 25C Maximum Reverse Recovery Current trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM IF = 100A, diF/dt = -200A/s VR = 133V, TC = 125C Maximum Reverse Recovery Current trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM IF = 100A, diF/dt = -700A/s VR = 133V, TC = 125C Maximum Reverse Recovery Current MAX - - UNIT Amps Amps THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic / Test Conditions RJC Junction-to-Case Thermal Resistance WT Package Weight Torque MAX UNIT .18 C/W 0.22 oz 5.9 g Maximum Mounting Torque 10 lb*in 1.1 N*m Microsemi reserves the right to change, without notice, the specifications and information contained herein. 1 Countinous current limited by package lead temperature. 0.18 D = 0.9 0.16 0.14 0.7 0.12 0.10 0.5 Note: PDM 0.08 0.3 0.06 0.1 0.05 0.02 0 10-5 Duty Factor D = t1/t2 SINGLE PULSE Peak TJ = PDM x ZJC + TC 10-4 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION TJ ( C) TC ( C) 7-2006 0.00817 053-6021 Rev C t1 t2 0.04 0.0174 0.0593 0.095 Dissipated Power (Watts) 0.00514 0.00242 0.0158 0.384 ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction. FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL ZEXT Z JC, THERMAL IMPEDANCE (C/W) 0.20 TYPICAL PERFORMANCE CURVES 180 TJ = 25C 120 TJ = 125C 60 0 TJ = 150C 0 Qrr, REVERSE RECOVERY CHARGE (nC) 2500 40 20 0 200 400 600 800 -diF /dt, CURRENT RATE OF CHANGE(A/s) Figure 3. Reverse Recovery Time vs. Current Rate of Change 130A 100A 1000 50A 500 TJ = 125C VR = 133V 35 130A 30 25 20 100A 15 50A 10 5 0 200 400 600 800 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 4. Reverse Recovery Charge vs. Current Rate of Change 0 0 200 400 600 800 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 5. Reverse Recovery Current vs. Current Rate of Change 400 1.2 1.0 t rr 300 I RRM 0.8 Qrr 0.6 Duty cycle = 0.5 TJ = 150C Q rr t rr IF(AV) (A) Kf, DYNAMIC PARAMETERS (Normalized to 700A/s) TJ = 125C VR = 133V 40 2000 0 60 0 0.5 1.0 1.5 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 2. Forward Current vs. Forward Voltage 130A 50A 80 TJ = -55C TJ = 125C VR = 133V 1500 trr, REVERSE RECOVERY TIME (ns) 240 100A 100 IRRM, REVERSE RECOVERY CURRENT (A) IF, FORWARD CURRENT (A) 300 APT100S20B(G) 120 360 200 Lead Temperature Limited 0.4 100 0.2 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 6. Dynamic Parameters vs. Junction Temperature 0 75 100 125 150 Case Temperature (C) Figure 7. Maximum Average Forward Current vs. CaseTemperature 4000 3000 2000 1000 1 10 100 200 VR, REVERSE VOLTAGE (V) Figure 8. Junction Capacitance vs. Reverse Voltage 100 50 10 7-2006 5000 0 50 200 PEAK AVALANCHE CURRENT (A) CJ, JUNCTION CAPACITANCE (pF) 6000 25 5 1 1 10 100 1000 2500 Time in Avalanche (s) Figure 9. Single Pulse UIS SOA 053-6021 Rev C 0.0 APT100S20B(G) Vr diF /dt Adjust +18V APT20M20LLL 0V D.U.T. 30H trr/Qrr Waveform PEARSON 2878 CURRENT TRANSFORMER Figure 9. Diode Test Circuit 1 IF - Forward Conduction Current 2 diF /dt - Rate of Diode Current Change Through Zero Crossing. 3 IRRM - Maximum Reverse Recovery Current. 4 trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. 5 1 4 Zero 5 3 2 Qrr - Area Under the Curve Defined by IRRM and trr. Figure 10, Diode Reverse Recovery Waveform and Definitions TO-247 Package Outline e1 SAC: Tin, Silver, Copper 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 15.49 (.610) 16.26 (.640) 6.15 (.242) BSC 5.38 (.212) 6.20 (.244) Cathode 20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150) 4.50 (.177) Max. 19.81 (.780) 20.32 (.800) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 053-6021 Rev C 7-2006 0.40 (.016) 0.79 (.031) Anode 2.21 (.087) 2.59 (.102) Cathode 10.90 (.430) BSC Dimensions in Millimeters and (Inches) 0.25 IRRM