1. Product profile
1.1 General description
Very low capacitance bidirectional ElectroStatic Discharge (ESD) protection diodes in
small Surface-Mounted Device (SMD) plastic packages designed to protect one signal
line from the damage caused by ESD and other transients.
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
PESD5V0V1BA;
PESD5V0V1BB; PESD5V0V1BL
Very low capacitance bidir ectional ESD protection diodes
Rev. 2 — 9 November 2012 Product data sheet
Table 1. Product overview
Type number Package Package configuration
NXP JEITA
PESD5V0V1BA SOD323 SC-76 very small
PESD5V0V1BB SOD523 SC-79 ultra small and flat lead
PESD5V0V1BL SOD882 - leadless ultra small
Bidirectional ESD protection of one line ESD protection up to 30 kV
Very low diode capacitance: Cd=11pF IEC 61000-4-2; level 4 (ESD)
Max. peak pulse power: PPP =45W IEC 61000-4-5 (surge); IPP =4.8A
Low clamping voltage: VCL = 12.5 V AEC-Q101 qualified
Ultra low leakage current: IRM <1nA
Computers and peripherals Communication systems
Audio and video equipment Portable electronics
Cellular handsets and accessories 10/100 Mbit/s Ethernet
Subscriber Identity Module (SIM) card
protection
FireWire
Table 2. Quick reference data
Tamb =25
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
VRWM reverse standoff voltage - - 5 V
Cddiode capacitance f = 1 MHz; VR=0V - 11 13 pF
PESD5V0V1BA_BB_BL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 2 — 9 November 2012 2 of 14
NXP Semiconductors PESD5V0V1BA/BB/BL
Very low capacitance bidirectional ESD protection diodes
2. Pinning information
[1] The marking bar indicates pin 1.
3. Ordering information
4. Marking
5. Limiting values
Table 3. Pinning
Pin Description Simplified outline Graphic symbol
PESD5V0V1BA; PESD5V0V1BB
1 cathode (diode 1) [1]
2 cathode (diode 2)
PESD5V0V1BL
1 cathode (diode 1) [1]
2 cathode (diode 2)
001aab540
12
sym045
21
21
Transparent
top view
sym045
21
Tabl e 4. Ordering information
Type number Package
Name Description Version
PESD5V0V1BA SC-76 plastic surface-mounted package; 2 leads SOD323
PESD5V0V1BB SC-79 plastic surface-mounted package; 2 leads SOD523
PESD5V0V1BL - leadless ultra small plastic package; 2 terminals;
body 1.0 0.6 0.5 mm SOD882
Table 5. Marking codes
Type number Marking code
PESD5V0V1BA 1K
PESD5V0V1BB Z9
PESD5V0V1BL X1
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per diode
PPP peak pulse power tp=8/20s[1] -45W
IPP peak pulse current tp=8/20s[1] -4.8A
PESD5V0V1BA_BB_BL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 2 — 9 November 2012 3 of 14
NXP Semiconductors PESD5V0V1BA/BB/BL
Very low capacitance bidirectional ESD protection diodes
[1] Non-repetitive current pulse 8/20 s exponential decay waveform according to IEC 61000-4-5.
[1] Device stressed with ten non-repetitive ESD pulses.
Per device
Tjjunction temperature - 150 C
Tamb ambient temperature 55 +150 C
Tstg storage temperature 65 +150 C
Table 7. ESD maximum ratings
Tamb =25
C unless otherwise specified.
Symbol Parameter Conditions Min Max Unit
VESD electrostatic discharge voltage IEC 610 00-4-2
(contact discharge) [1] -30kV
machine model - 2 kV
MIL-STD-883 (human
body model) -16kV
Table 8. ESD standards compliance
Standard Conditions
IEC 61000-4-2; level 4 (ESD) > 15 kV (air); > 8 kV (contact)
MIL-STD-883; class 3 B (human body model) > 8 kV
Table 6. Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Fig 1. 8/20 s pulse wavefor m according to
IEC 61000-4-5 Fig 2. ESD pulse waveform according to
IEC 61000-4-2
t (μs)
0403010 20
001aaa630
40
80
120
IPP
(%)
0
e−t
100 % IPP; 8 μs
50 % IPP; 20 μs
001aaa631
I
PP
100 %
90 %
t
30 ns 60 ns
10 %
t
r
= 0.7 ns to 1 ns
PESD5V0V1BA_BB_BL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 2 — 9 November 2012 4 of 14
NXP Semiconductors PESD5V0V1BA/BB/BL
Very low capacitance bidirectional ESD protection diodes
6. Characteristics
[1] Non-repetitive current pulse 8/20 s exponential decay waveform according to IEC 61000-4-5.
[2] Non-repetitive current pulse, Transmission Line Pulse (TLP) tp= 100 ns; square pulse;
ANS/IESD STM5.1-2008.
Table 9. Characteristics
Tamb =25
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
VRWM reverse standoff voltage - - 5 V
IRM reverse leakage current VRWM =5V - < 1 10 nA
VBR breakdown voltage IR=5mA 5.86.87.8V
Cddiode capacitance f = 1 MHz;
VR=0V -1113pF
VCL clamping voltage IPP =4.8A [1] --12.5V
rdyn dynamic resistance IR=10A [2] -0.2-
rdif differential resistance IR=5mA - - 35
Tamb =25C
Fig 3. Peak pulse power as a function of exponential
pulse duration; typical values Fig 4. Relative variation of peak pulse power as a
function of junction temperature; typical
values
tp (μs)
110
3
102
10
006aab606
102
10
103
PPP
(W)
1
Tj (°C)
0 20015050 100
001aaa193
0.4
0.8
1.2
PPP
0
PPP(25°C)
PESD5V0V1BA_BB_BL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 2 — 9 November 2012 5 of 14
NXP Semiconductors PESD5V0V1BA/BB/BL
Very low capacitance bidirectional ESD protection diodes
f=1MHz; T
amb =25C
Fig 5. Diode capacitance as a function of reverse
voltage; typical values Fig 6. Relative variation of reverse leakage current
as a function of junction temperature; typical
values
Fig 7. V-I characteristics for a bidirectional ESD protection diode
VR (V)
054231
006aab607
8
10
12
Cd
(pF)
6
006aab608
1
10−1
102
10
103
10−2
Tj (°C)
−100 150100050−50
IRM
IRM(25°C)
006aaa676
−V
CL
−V
BR
−V
RWM
V
CL
V
BR
V
RWM
−I
RM
I
RM
−I
R
I
R
−I
PP
I
PP
−+
PESD5V0V1BA_BB_BL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 2 — 9 November 2012 6 of 14
NXP Semiconductors PESD5V0V1BA/BB/BL
Very low capacitance bidirectional ESD protection diodes
Fig 8. ESD clamping test setu p and waveforms
006aab609
50 Ω
RZ
CZDUT
(DEVICE
UNDER
TEST)
GND
450 Ω
RG 223/U
50 Ω coax
ESD TESTER
acc. to IEC 61000-4-2
CZ = 150 pF; RZ = 330 Ω
4 GHz DIGITAL
OSCILLOSCOPE
10×
ATTENUATOR
unclamped +8 kV ESD pulse waveform
(IEC 61000-4-2 network)
vertical scale = 10 A/div
horizontal scale = 15 ns/div
GND
unclamped −8 kV ESD pulse waveform
(IEC 61000-4-2 network)
vertical scale = 10 A/div
horizontal scale = 15 ns/div
clamped +8 kV ESD pulse waveform
(IEC 61000-4-2 network)
vertical scale = 10 V/div
horizontal scale = 100 ns/div
GND
clamped −8 kV ESD pulse waveform
(IEC 61000-4-2 network)
GND
vertical scale = 10 V/div
horizontal scale = 100 ns/div
PESD5V0V1BA_BB_BL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 2 — 9 November 2012 7 of 14
NXP Semiconductors PESD5V0V1BA/BB/BL
Very low capacitance bidirectional ESD protection diodes
7. Application information
The PESD5V0V1Bx series is designed for the protection of one bidirectional data or
signal line from the damage caused by ESD and surge pulses. The devices may be used
on lines where the signal polarities are both, positive or negative with respect to ground.
The PESD5V0V1Bx series provides a surge capability of 45 W per line for an 8/20 s
waveform.
Circuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)
and surge transients. The following guidelines are recommended:
1. Place the device as clos e to the input terminal or connector as possible.
2. Minimize the path length between the device and the protected line.
3. Keep parallel signal paths to a minimum.
4. Avoid running protected conductors in parallel with unprotected conductors.
5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and
ground loops.
6. Minimize the length of the transient return path to ground.
7. Avoid using shared transient return paths to a common ground point.
8. Use ground planes whenever possible. For multilayer PCBs, use ground vias.
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
Fig 9. Application di ag ram
006aab610
PESD5V0V1Bx
GND
line to be protected
PESD5V0V1BA_BB_BL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 2 — 9 November 2012 8 of 14
NXP Semiconductors PESD5V0V1BA/BB/BL
Very low capacitance bidirectional ESD protection diodes
9. Package outline
10. Packing information
[1] For further information and the availability of packing methods, see Section 14.
Fig 10. Package outline
PESD5V0V1BA (SOD323/SC-76) Fig 11. Package outline
PESD5V0V1BB (SOD523/SC-79)
Fig 12. Package outline PESD5V0V1BL (SOD882)
03-04-17Dimensions in mm
0.55
0.47
0.65
0.62
0.55 0.50
0.46
cathode marking on top side (if applicable)
1.02
0.95
0.30
0.22
0.30
0.22
2
1
Table 10. Packing methods
The indicated -xxx are the last thre e digits of the 12NC ordering code.[1]
Type number Package Description Packing quantity
3000 8000 10000
PESD5V0V1BA SOD323 4 mm pitch, 8 mm tape and reel -115 - -135
PESD5V0V1BB SOD523 2 mm pitch, 8 mm tape and reel - -315 -
4 mm pitch, 8 mm tape and reel -115 - -135
PESD5V0V1BL SOD882 2 mm pitch, 8 mm tape and reel - - -315
PESD5V0V1BA_BB_BL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 2 — 9 November 2012 9 of 14
NXP Semiconductors PESD5V0V1BA/BB/BL
Very low capacitance bidirectional ESD protection diodes
11. Soldering
Fig 13. Reflow soldering footprint PESD5V0V1BA (SOD323/SC-76)
Fig 14. Wave soldering footprint PESD5V0V1BA (SOD323/SC-76)
0.951.65
2.2
2.1
3.05
solder lands
solder resist
occupied area
solder paste
0.5
(2×)
0.6
(2×)
0.6 (2×)0.5 (2×)
sod323_fr
Dimensions in mm
1.5 (2×)
2.9
5
1.2
(2×)
2.75
sod323_fw
solder lands
solder resist
occupied area
preferred transport
direction during soldering
Dimensions in mm
PESD5V0V1BA_BB_BL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 2 — 9 November 2012 10 of 14
NXP Semiconductors PESD5V0V1BA/BB/BL
Very low capacitance bidirectional ESD protection diodes
Fig 15. Reflow soldering footprint PESD5V0V1BB (SOD523/SC-79)
Fig 16. Reflow soldering footprint PESD5V0V1BL (SOD882)
Footprint information for reflow soldering of plastic surface-mounted, 2 leads package SOD523
sod523_fr
occupied area
solder land
solder resist
solder land plus solder paste
solder paste deposit
Dimensions in mm
0.6
(2×)
0.5
(2×)
2.15
1.4
0.4
(2×)
0.5
(2×)
1.2
solder lands
solder resist
occupied area
solder paste
sod882_fr
0.9
0.3
(2×)
R0.05 (8×)
0.6
(2×) 0.7
(2×)
0.4
(2×)
1.3
0.5
(2×)
0.8
(2×)
0.7
Dimensions in mm
PESD5V0V1BA_BB_BL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 2 — 9 November 2012 11 of 14
NXP Semiconductors PESD5V0V1BA/BB/BL
Very low capacitance bidirectional ESD protection diodes
12. Revision history
Table 11. Revision history
Document ID Release date Data sheet status Change notice Supersedes
PESD5V0V1BA_BB_BL v.2 20121109 Product data sheet - PESD5V0V1BA_BB_BL v.1
Modifications: •Table 9 “Characteristics”: added dynamic resistance rdyn
•Figure 15: updated
•Section 13 “ Legal information”: updated
PESD5V0V1BA_BB_BL v.1 20090728 Product data sheet - -
PESD5V0V1BA_BB_BL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 2 — 9 November 2012 12 of 14
NXP Semiconductors PESD5V0V1BA/BB/BL
Very low capacitance bidirectional ESD protection diodes
13. Legal information
13.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status o f device( s) described in this d ocument may have change d since this d ocument was p ublished and may di ffe r in case of multiple devices. The latest product st atus
information is available on the Internet at URL http://www.nxp.com.
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or comple teness of
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Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and tit le. A short data sh eet is intended
for quick reference only and shou ld not be rel ied u pon to cont ain det ailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall pre vail.
Product specificat io n — The information and data provided in a Product
data sheet shall define the specification of the product as agr eed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
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shall an agreement be valid in which the NXP Semiconductors product is
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Notwithstanding any damages that customer might incur for any reason
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limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all informa tion supplied prior
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Semiconductors product has been qualified for use in automotive
applications. Unless ot herwise agreed in writing, the product is not designed,
authorized or warranted to be suitable for use in life support, life-critical or
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Applications — Applications that are described herein for any of these
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Customers are responsible for the design and ope ration of their applications
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customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanent ly and irreversibly affect
the quality and reliability of the device.
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applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.
Product [short] dat a sheet Production This document contains the product specification.
PESD5V0V1BA_BB_BL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 2 — 9 November 2012 13 of 14
NXP Semiconductors PESD5V0V1BA/BB/BL
Very low capacitance bidirectional ESD protection diodes
No offer to sell or license — Nothing in this document may be interpret ed or
construed as an of fer to sell product s that is op en for accept ance or the grant ,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
13.4 Trademarks
Notice: All referenced b rands, produc t names, service names and trademarks
are the property of their respect i ve ow ners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
NXP Semiconductors PESD5V0V1BA/BB/BL
Very low capacitance bidirectional ESD protection diodes
© NXP B.V. 2012. All rights reserved.
For more information, please visit: http://www.nxp.co m
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 9 November 2012
Document identifier: PESD5V0V1BA_BB_BL
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
15. Contents
1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4
7 Application information. . . . . . . . . . . . . . . . . . . 7
8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 7
8.1 Quality information . . . . . . . . . . . . . . . . . . . . . . 7
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
10 Packing information . . . . . . . . . . . . . . . . . . . . . 8
11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11
13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12
13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12
13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13
14 Contact information. . . . . . . . . . . . . . . . . . . . . 13
15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14