1N6263 (R) SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon junction diode featuring high breakdown, low turn-on voltage and ultrafast switching. Primarly intended for high level UHF/VHF detection and pulse application with broad dynamic range. DO-35 ABSOLUTE RATINGS (limiting values) Symbol Parameter Value 60 V Forward Continuous Current* Ta = 25C 15 mA IFSM Surge non Repetitive Forward Current* tp 1s 50 mA Tstg Tj Storage and Junction Temperature Range - 65 to 200 - 65 to 200 C TL Maximum Lead Temperature for Soldering during 10s at 4mm from Case 230 C VRRM IF Repetitive Peak Reverse Voltage Unit THERMAL RESISTANCE Symbol Rth(j-a) Test Conditions Junction-ambient* Value Unit 400 C/W ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS Symbol Test Conditions Min. Typ. Max. Unit VBR Tamb = 25C IR = 10A VF * * Tamb = 25C IF = 1mA 0.41 Tamb = 25C IF = 15mA 1 Tamb = 25C VR = 50V 0.2 A IR * * 60 V V DYNAMIC CHARACTERISTICS Symbol Max. Unit C Tamb = 25C VR = 0V Test Conditions f = 1MHz Min. Typ. 2.2 pF Tamb = 25C IF = 5mA Krakauer Method 100 ps * On infinite heatsink with 4mm lead length ** Pulse test: tp 300s < 2%. Matched batches available on request. Test conditions (forward voltage and/or capacitance) according to customer specification. October 2001 - Ed: 1B 1/3 1N6263 Fig. 1: Forward current versus forward voltage (typical values). Fig. 2: Capacitance C versus reverse applied voltage VR (typical values). Fig. 3: Reverse current versus ambient temperature. Fig. 4: Reverse current versus continuous reverse voltage (typical values). 2/3 1N6263 PACKAGE MECHANICAL DATA DO-35 REF. C O /D A C O /D DIMENSIONS Millimeters O / B Inches Min. Max. Min. Max. A 3.05 4.50 0.120 0.177 B 1.53 2.00 0.060 0.079 C 28.00 D 0.458 1.102 0.558 0.018 0.022 Cooling method : by convection and conduction Marking: clear, ring at cathode end. Weight: 0.15g Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 2001 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 3/3