PD - 95637A IRG4IBC30SPbF INSULATED GATE BIPOLAR TRANSISTOR Features C * Standard: Optimized for minimum saturation voltage and low operating freqencies (<1 kHz) * Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation * Industry standard TO-220 Full-Pak * Lead-Free VCES = 600V VCE(on) typ. = 1.4V G @VGE = 15V, IC = 18A E N-channel Benefits * Generation 4 IGBTs offer highest efficiencies available * IGBTs optimized for specific application conditions * Designed to be a "drop-in" replacement for equivalent industry -standard Generation 3 IR IGBTs TO-220 Full-Pak Absolute Maximum Ratings VCES IC @ TC = 25C IC @ TC = 100C ICM ILM VGE EARV PD @ TC = 25C PD @ TC = 100C TJ TSTG Parameter Max. Units Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds 600 23.5 13.0 47 47 20 10 45 18 -55 to + 150 V A V mJ W C 300 (0.063 in. (1.6mm) from case) Thermal Resistance Parameter RJC RJA Wt www.irf.com Junction-to-Case Junction-to-Ambient, typical socket mount Weight Typ. Max. --- --- 2.1 (0.075) 2.8 65 --- Units C/W g (oz) 1 06/17/2010 IRG4IBC30SPbF Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)CES V(BR)ECS V(BR)CES/TJ VCE(ON) VGE(th) VGE(th)/TJ gfe ICES IGES Parameter Min. Typ. Max. Units Conditions Collector-to-Emitter Breakdown Voltage 600 -- -- V VGE = 0V, IC = 250A Emitter-to-Collector Breakdown Voltage 18 -- -- V VGE = 0V, IC = 1.0A Temperature Coeff. of Breakdown Voltage -- 0.75 -- V/C VGE = 0V, IC = 1.0mA -- 1.40 1.6 IC = 18A VGE = 15V Collector-to-Emitter Saturation Voltage -- 1.84 -- IC = 34A See Fig.2, 5 V -- 1.45 -- IC = 18A , TJ = 150C Gate Threshold Voltage 3.0 -- 6.0 VCE = VGE, IC = 250A Temperature Coeff. of Threshold Voltage -- -11 -- mV/C VCE = VGE, IC = 250A Forward Transconductance 6.0 11 -- S VCE = 100 V, IC = 18A -- -- 250 VGE = 0V, VCE = 600V Zero Gate Voltage Collector Current A -- -- 2.0 VGE = 0V, VCE = 10V, TJ = 25C -- -- 1000 VGE = 0V, VCE = 600V, TJ = 150C Gate-to-Emitter Leakage Current -- -- 100 nA VGE = 20V Switching Characteristics @ TJ = 25C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. Max. Units Conditions 50 75 IC = 18A 7.3 11 nC VCC = 400V See Fig.8 17 26 VGE = 15V 22 -- 18 -- TJ = 25C ns 540 810 IC = 18A, VCC = 480V 390 590 VGE = 15V, RG = 23 0.26 -- Energy losses include "tail" 3.45 -- mJ See Fig. 9, 10, 14 3.71 5.6 21 -- TJ = 150C, 19 -- IC = 18A, VCC = 480V ns 790 -- VGE = 15V, RG = 23 760 -- Energy losses include "tail" 6.55 -- mJ See Fig. 10, 11, 14 7.5 -- nH Measured 5mm from package 1100 -- VGE = 0V 72 -- pF VCC = 30V See Fig. 7 19 -- = 1.0MHz Notes: Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. (See Fig. 13b) VCC = 80%(VCES), VGE = 20V, L = 10H, RG = 23, Pulse width 80s; duty factor 0.1%. Pulse width 5.0s, single shot. (See Fig. 13a) Repetitive rating; pulse width limited by maximum junction temperature. 2 www.irf.com IRG4IBC30SPbF 20 For both: Square wave: For both: Duty cycle: Duty cycle :50% 50% TJ ==125C 125C Tj Tsink = 90C Tsink Gate drive drive as as specified specified Power Dissipation W Power Dissipation==5.8 7.0W 60% of rated voltage Load Current ( A ) 15 I Triangular wave: Ideal diodes 10 I Clamp voltage: 80% of rated 5 0 0.1 1 10 100 f , Frequency ( kHz ) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 100 TJ = 25 o C TJ = 150 o C 10 1 V GE = 15V 20s PULSE WIDTH 1 10 VCE , Collector-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics www.irf.com I C, Collector-to-Emitter Current (A) I C , Collector-to-Emitter Current (A) 100 TJ = 150 oC 10 TJ = 25 oC 1 0.1 V CC = 50V 5s PULSE WIDTH 5 6 7 8 9 10 VGE , Gate-to-Emitter Voltage (V) Fig. 3 - Typical Transfer Characteristics 3 IRG4IBC30SPbF 3.0 V GE = 15V VCE , Collector-to-Emitter Voltage(V) Maximum DC Collector Current (A) 24 20 16 12 8 4 50 75 100 125 150 2.0 IC = 18 A 1.5 IC = 0 20 40 60 9A 80 100 120 140 160 TJ , Junction Temperature ( C) TJ , Junction Temperature (C) Fig. 4 - Maximum Collector Current vs. Case Temperature IC = 36 A 2.5 1.0 -60 -40 -20 0 25 VGE = 15V 80 us PULSE WIDTH Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature Thermal Response (Z thJC ) 10 D = 0.50 1 0.20 0.10 0.05 0.1 0.01 0.00001 PDM 0.02 t1 0.01 t2 SINGLE PULSE (THERMAL RESPONSE) 0.0001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.001 0.01 0.1 1 10 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4IBC30SPbF 2000 20 VGE , Gate-to-Emitter Voltage (V) VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc C, Capacitance (pF) 1500 Cies 1000 500 Coes Cres 0 1 10 VCC = 400V I C = 18A 16 12 8 4 0 100 0 10 VCE , Collector-to-Emitter Voltage (V) 100 V CC = 480V V GE = 15V TJ = 25 C 3.76 I C = 18A Total Switching Losses (mJ) Total Switching Losses (mJ) 3.80 3.72 3.68 3.64 3.60 0 10 20 30 40 Gate Resistance ()(Ohm) R RG,, Gate Resistance G Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com 30 40 50 60 Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage 10 20 QG , Total Gate Charge (nC) 50 RG = 23Ohm VGE = 15V VCC = 480V IC = 36 A 10 IC = 18 A A IC = 9.0 9A 1 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( C ) Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 IRG4IBC30SPbF RG TJ VCC 12.0 VGE 1000 = 23Ohm = 150 C = 480V = 15V I C , Collector-to-Emitter Current (A) Total Switching Losses (mJ) 15.0 VGE = 20V T J = 125 oC 100 9.0 6.0 3.0 0.0 0 10 20 30 40 I C , Collector-to-emitter Current (A) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 6 50 10 1 SAFE OPERATING AREA 1 10 100 1000 VCE , Collector-to-Emitter Voltage (V) Fig. 12 - Turn-Off SOA www.irf.com IRG4IBC30SPbF L RL = VCC ICM D.U.T. VC * 50V 1000V c d 0 - VCC 480F * Driver same type as D.U.T.; Vc = 80% of Vce(max) * Note: Due to the 50V power supply, pulse width and inductor will increase to obtain rated Id. Fig. 13a - Clamped Inductive Fig. 13b - Pulsed Collector Load Test Circuit Current Test Circuit IC L Driver* D.U.T. VC Fig. 14a - Switching Loss Test Circuit 50V 1000V c d e * Driver same type as D.U.T., VC = 480V c d 90% e VC 10% 90% Fig. 14b - Switching Loss t d(off) 10% I C 5% Waveforms tf tr t d(on) t=5s E on E off E ts = (Eon +Eoff ) www.irf.com 7 IRG4IBC30SPbF TO-220 Full-Pak Package Outline Dimensions are shown in millimeters (inches) TO-220 Full-Pak Part Marking Information (;$03/( 7+,6,6$1,5),* :,7+$66(0 %/< /27&2'( $66(0%/('21:: ,17+($66(0%/</,1(. Note: "P" in assembly line position indicates "Lead-Free" ,17(51$7,21$/ 5(&7,),(5 /2*2 $66(0 %/< /27&2'( 3$57180 %(5 ,5 ) , * . '$7(&2'( <($5 :((. /,1(. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.06/2010 8 www.irf.com