1. Product profile
1.1 General description
NPN general-purpose transistors.
[1] Also available in SOT54A and SOT54 variant packages (see Section 2).
1.2 Features
High current
Low voltage
1.3 Applications
General-purpose switching and amplification
1.4 Quick reference data
[1] Pulse test: tp 300 μs; δ ≤ 0.02.
BC817; BC817W; BC337
45 V, 500 mA NPN general-purpose transistors
Rev. 06 — 17 November 2009 Product data sheet
Table 1. Product overview
Type number Package PNP complement
NXP JEITA
BC817 SOT23 - BC807
BC817W SOT323 SC-70 BC807W
BC337[1] SOT54 (TO-92) SC-43A BC327
Table 2. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VCEO collector-emitter voltage open base;
IC=10mA --45V
ICcollector current (DC) - - 500 mA
ICM peak collector current - - 1 A
hFE DC current gain IC = 100 mA;
VCE =1V [1] ---
BC817; BC817W; BC337 100 - 600
BC817-16; BC817-16W; BC337-16 100 - 250
BC817-25; BC817-25W; BC337-25 160 - 400
BC817-40; BC817-40W; BC337-40 250 - 600
BC817_BC817W_BC337_6 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 06 — 17 November 2009 2 of 19
NXP Semiconductors BC817; BC817W; BC337
45 V, 500 mA NPN general-purpose transistors
2. Pinning information
Table 3. Pinning
Pin Description Simplified outline Symbol
SOT23
1base
2emitter
3 collector
SOT323
1base
2emitter
3 collector
SOT54
1emitter
2base
3 collector
SOT54A
1emitter
2base
3 collector
SOT54 varia nt
1emitter
2base
3 collector
12
3
sym02
1
3
2
1
3
12
sot323_s
o
sym02
1
3
2
1
001aab34
7
1
2
3
sym02
6
3
1
2
001aab34
8
1
2
3
sym02
6
3
1
2
001aab44
7
1
2
3
sym02
6
3
1
2
BC817_BC817W_BC337_6 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 06 — 17 November 2009 3 of 19
NXP Semiconductors BC817; BC817W; BC337
45 V, 500 mA NPN general-purpose transistors
3. Ordering information
[1] Valid for all available selection groups.
[2] Also available in SOT54A and SOT54 variant packages (see Section 2 and Section 9).
4. Marking
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Table 4. Ordering information
Type number[1] Package
Name Description Version
BC817 - plastic surface mounted package; 3 leads SOT23
BC817W SC-70 plastic surface mounted package; 3 leads SOT323
BC337[2] SC-43A plastic single-ended leaded (through hole) package;
3 leads SOT54
Table 5. Marking codes
Type number Marking code[1]
BC817 6D*
BC817-16 6A*
BC817-25 6B*
BC817-40 6C*
BC817W 6D*
BC817-16W 6A*
BC817-25W 6B*
BC817-40W 6C*
BC337 C337
BC337-16 C33716
BC337-25 C33725
BC337-40 C33740
BC817_BC817W_BC337_6 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 06 — 17 November 2009 4 of 19
NXP Semiconductors BC817; BC817W; BC337
45 V, 500 mA NPN general-purpose transistors
5. Limiting values
[1] Transistor mounted on an FR4 printed-circuit boar d, single-sided copper, tin-plated and standard footprint.
[2] Valid for all available selection groups.
6. Thermal characteristics
[1] Transistor mounted on an FR4 printed-circuit boar d, single-sided copper, tin-plated and standard footprint.
[2] Valid for all available selection groups.
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VCBO collector-base voltage open emitter - 50 V
VCEO collector-emitter voltage open base;
IC=10mA -45V
VEBO emitter-base voltage open collector - 5 V
ICcollector current (DC) - 500 mA
ICM peak collector current - 1 A
IBM peak base current - 200 mA
Ptot total power dissipation
BC817 Tamb 25 °C[1][2] -250mW
BC817W Tamb 25 °C[1][2] -200mW
BC337 Tamb 25 °C[1][2] -625mW
Tstg storage temperature 65 +150 °C
Tjjunction temperature - 150 °C
Tamb ambient temperature 65 +150 °C
Table 7. Thermal characteris tics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-a) thermal resistance from
junction to ambient
BC817 Tamb 25 °C[1][2] - - 500 K/W
BC817W Tamb 25 °C[1][2] - - 625 K/W
BC337 Tamb 25 °C[1][2] - - 200 K/W
BC817_BC817W_BC337_6 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 06 — 17 November 2009 5 of 19
NXP Semiconductors BC817; BC817W; BC337
45 V, 500 mA NPN general-purpose transistors
7. Characteristics
[1] Pulse test: tp 300 μs; δ ≤ 0.02.
[2] VBE decreases by approximately 2 mV/K w ith increasing temper ature.
Table 8. Characteristics
Tamb = 25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
ICBO collector-base cut-off current IE = 0 A; VCB = 20 V - - 100 nA
IE = 0 A; VCB = 20 V;
Tj=150°C--5μA
IEBO emitter-base cut-off current IC = 0 A; VEB = 5 V - - 100 nA
hFE DC current gain IC = 100 mA; VCE = 1 V [1]
BC817; BC817W; BC337 100 - 600
BC817-16; BC817-16W;
BC337-16 100 - 250
BC817-25; BC817-25W;
BC337-25 160 - 400
BC817-40; BC817-40W;
BC337-40 250 - 600
hFE DC current gain IC = 500 mA; VCE = 1 V [1] 40 - -
VCEsat collector-emitter saturation
voltage IC = 500 mA; IB = 50 mA [1] --700mV
VBE base-emitter voltage IC = 500 mA; VCE = 1 V [2] --1.2V
Cccollector capacitance IE = ie = 0 A; VCB = 10 V;
f=1MHz -3-pF
fTtransition frequency IC = 10 mA; VCE = 5 V ;
f=100MHz 100 - - MHz
BC817_BC817W_BC337_6 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 06 — 17 November 2009 6 of 19
NXP Semiconductors BC817; BC817W; BC337
45 V, 500 mA NPN general-purpose transistors
VCE = 1 V
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = 55 °C
VCE = 1 V
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = 55 °C
Fig 1. Selection -1 6: D C cu r re n t ga in as a function of
collector current; typical values Fig 2. Selection -25: DC current gain as a function of
collector current; typical values
VCE = 1 V
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = 55 °C
Fig 3. Selection -40: DC current gain as a function of collecto r current; typical values
006aaa131
200
100
300
400
hFE
0
IC (mA)
101103
102
110
(1)
(2)
(3)
006aaa132
400
200
600
hFE
0
IC (mA)
101103
102
110
(1)
(2)
(3)
006aaa133
400
200
600
800
hFE
0
IC (mA)
101103
102
110
(1)
(2)
(3)
BC817_BC817W_BC337_6 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 06 — 17 November 2009 7 of 19
NXP Semiconductors BC817; BC817W; BC337
45 V, 500 mA NPN general-purpose transistors
IC/IB = 10
(1) Tamb = 55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
IC/IB = 10
(1) Tamb = 55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
Fig 4. Selection -16: Base-emitter saturation voltage
as a function of collector current; typical
values
Fig 5. Select ion -25: Base-emitter saturation voltage
as a function of collector curre nt; typical
values
IC/IB = 10
(1) Tamb = 55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
Fig 6. Selection -40: Base-emitter saturation voltage as a function of collector current; typical values
006aaa134
IC (mA)
101103
102
110
1
10
VBEsat
(V)
101
(1)
(2)
(3)
006aaa135
IC (mA)
101103
102
110
1
10
VBEsat
(V)
101
(1)
(2)
(3)
006aaa136
IC (mA)
101103
102
110
1
10
VBEsat
(V)
101
(1)
(2)
(3)
BC817_BC817W_BC337_6 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 06 — 17 November 2009 8 of 19
NXP Semiconductors BC817; BC817W; BC337
45 V, 500 mA NPN general-purpose transistors
IC/IB = 10
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = 55 °C
IC/IB = 10
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = 55 °C
Fig 7. Selection -16: Collector-emitter satu ratio n
voltage as a function of collector current;
typical valu e s
Fig 8. Selec t ion -25: Collector-emitter saturation
voltage as a function of collector current;
typical values
IC/IB = 10
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = 55 °C
Fig 9. Selection -40: Collector-emitter saturation voltage as a function of collector current; typical values
006aaa137
IC (mA)
101103
102
110
101
1
VCEsat
(V)
102
(1) (2)
(3)
006aaa138
101
102
1
VCEsat
(V)
103
IC (mA)
101103
102
110
(1)
(2)
(3)
006aaa139
101
102
1
VCEsat
(V)
103
IC (mA)
101103
102
110
(1)
(2)
(3)
BC817_BC817W_BC337_6 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 06 — 17 November 2009 9 of 19
NXP Semiconductors BC817; BC817W; BC337
45 V, 500 mA NPN general-purpose transistors
Tamb = 25 °C
(1) IB = 16.0 mA
(2) IB = 14.4 mA
(3) IB = 12.8 mA
(4) IB = 11.2 mA
(5) IB = 9.6 mA
(6) IB = 8.0 mA
(7) IB = 6.4 mA
(8) IB = 4.8 mA
(9) IB = 3.2 mA
(10) IB = 1.6 mA
Tamb = 25 °C
(1) IB = 13.0 mA
(2) IB = 11.7 mA
(3) IB = 10.4 mA
(4) IB = 9.1 mA
(5) IB = 7.8 mA
(6) IB = 6.5 mA
(7) IB = 5.2 mA
(8) IB = 3.9 mA
(9) IB = 2.6 mA
(10) IB = 1.3 mA
Fig 10. Selection -16: Collector current as a function
of collector-emitter voltage; typical values Fig 11. Selection -25: Collector current as a function
of collector-emitter voltage; typical values
VCE (V)
054231
006aaa140
0.4
0.8
1.2
IC
(A)
0
(6)
(7)
(8)
(9)
(10)
(1)(2)
(3)(4)
(5)
VCE (V)
054231
006aaa141
0.4
0.8
1.2
IC
(A)
0
(7)
(8)
(9)
(10)
(1)(2)
(3)(4)
(5)(6)
BC817_BC817W_BC337_6 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 06 — 17 November 2009 10 of 19
NXP Semiconductors BC817; BC817W; BC337
45 V, 500 mA NPN general-purpose transistors
Tamb = 25 °C
(1) IB = 12.0 mA
(2) IB = 10.8 mA
(3) IB = 9.6 mA
(4) IB = 8.4 mA
(5) IB = 7.2 mA
(6) IB = 6.0 mA
(7) IB = 4.8 mA
(8) IB = 3.6 mA
(9) IB = 2.4 mA
(10) IB = 1.2 mA
Fig 12. Selection -40: Collector current as a function of collector-emitter voltage; typical values
VCE (V)
054231
006aaa142
0.4
0.8
1.2
IC
(A)
0
(7)
(8)
(9)
(10)
(1)(2)
(3)(4)
(5)(6)
BC817_BC817W_BC337_6 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 06 — 17 November 2009 11 of 19
NXP Semiconductors BC817; BC817W; BC337
45 V, 500 mA NPN general-purpose transistors
8. Package outline
Fig 13. Package outline SOT23 (TO-236AB)
UNIT A1
max. bpcDE e1HELpQwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
04-11-04
06-03-16
IEC JEDEC JEITA
mm 0.1 0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2 0.95
e
1.9 2.5
2.1
0.55
0.45 0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23 TO-236AB
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
wM
vMA
B
AB
0 1 2 mm
scale
A
1.1
0.9
c
X
12
3
Plastic surface-mounted package; 3 leads SOT2
3
BC817_BC817W_BC337_6 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 06 — 17 November 2009 12 of 19
NXP Semiconductors BC817; BC817W; BC337
45 V, 500 mA NPN general-purpose transistors
Fig 14. Package outline SOT323 (SC-70)
UNIT A1
max bpcD Ee1HELpQwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
mm 0.1
1.1
0.8
0.4
0.3
0.25
0.10
2.2
1.8
1.35
1.15 0.65
e
1.3 2.2
2.0
0.23
0.13 0.20.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT323 SC-70
wM
bp
D
e1
e
A
B
A1
Lp
Q
detail X
c
HE
E
vMA
AB
y
0 1 2 mm
scale
A
X
12
3
Plastic surface-mounted package; 3 leads SOT32
3
04-11-04
06-03-16
BC817_BC817W_BC337_6 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 06 — 17 November 2009 13 of 19
NXP Semiconductors BC817; BC817W; BC337
45 V, 500 mA NPN general-purpose transistors
Fig 15. Package outline SOT54 (SC-43A/TO-92)
UNIT A
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
mm 5.2
5.0
b
0.48
0.40
c
0.45
0.38
D
4.8
4.4
d
1.7
1.4
E
4.2
3.6
L
14.5
12.7
e
2.54
e1
1.27
L1(1)
max.
2.5
b1
0.66
0.55
DIMENSIONS (mm are the original dimensions)
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
SOT54 TO-92 SC-43A 04-06-28
04-11-16
A L
0 2.5 5 mm
scale
b
c
D
b1L1
d
E
Plastic single-ended leaded (through hole) package; 3 leads SOT5
4
e1
e
1
2
3
BC817_BC817W_BC337_6 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 06 — 17 November 2009 14 of 19
NXP Semiconductors BC817; BC817W; BC337
45 V, 500 mA NPN general-purpose transistors
Fig 16. Package outline SOT54A
UNIT A
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
mm 5.2
5.0
b
0.48
0.40
c
0.45
0.38
D
4.8
4.4
d
1.7
1.4
E
4.2
3.6
L
14.5
12.7
3
2
e
5.08
e1L2
2.54
L1(1)
max.
3
b1
0.66
0.55
DIMENSIONS (mm are the original dimensions)
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
SOT54A 97-05-13
04-06-28
AL
0 2.5 5 mm
scale
b
c
D
b1
L1
L2
d
E
Plastic single-ended leaded (through hole) package; 3 leads (wide pitch) SOT54
A
e1
e
1
2
3
BC817_BC817W_BC337_6 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 06 — 17 November 2009 15 of 19
NXP Semiconductors BC817; BC817W; BC337
45 V, 500 mA NPN general-purpose transistors
Fig 17. Package outline SOT54 variant
UNIT A
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
mm 5.2
5.0
b
0.48
0.40
c
0.45
0.38
D
4.8
4.4
d
1.7
1.4
E
4.2
3.6
L
14.5
12.7
e
2.54
e1
1.27
L1(1)
max L2
max
2.5 2.5
b1
0.66
0.55
DIMENSIONS (mm are the original dimensions)
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
SOT54 variant
A L
0 2.5 5 mm
scale
b
c
D
b1L1
d
E
Plastic single-ended leaded (through hole) package; 3 leads (on-circle) SOT54 varia
nt
1
2
3
L2
e1
e
e1
04-06-28
05-01-10
BC817_BC817W_BC337_6 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 06 — 17 November 2009 16 of 19
NXP Semiconductors BC817; BC817W; BC337
45 V, 500 mA NPN general-purpose transistors
9. Packing information
[1] For further information and the availability of packing methods, see Section 12.
Table 9. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number Package Description Packing quantity
3000 5000 10000
BC817 SOT23 4 mm pitch, 8 mm tape and reel -215 - -235
BC817W SOT323 4 mm pitch, 8 mm tape and reel -115 - -135
BC337 SOT54 bulk, straight leads - -412 -
BC337 SOT54A tape and reel, wide pitch - - -116
BC337 SOT54A tape ammopack, wide pitch - - -126
BC337 SOT 54 variant bulk, delta pinning (on-circle) - -112 -
BC817_BC817W_BC337_6 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 06 — 17 November 2009 17 of 19
NXP Semiconductors BC817; BC817W; BC337
45 V, 500 mA NPN general-purpose transistors
10. Revision history
Table 10. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BC817_BC817W_
BC337_6 20091117 Product data sheet - BC817_BC817W_
BC337_5
Modifications: This data sheet was changed to reflec t the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical
content.
Table 3 “Pinning: updated
Figure 13 “Package outline SOT23 (TO-236AB): updated
Figure 14 “Package outline SOT323 (SC-70): updated
BC817_BC817W_
BC337_5 20050121 Product data sheet CPCN200302007F1 BC817_4;
BC817W_SER_4;
BC337_3
BC817_4 20040105 Product specification - BC817_ 3
BC817W_SER_4 20040225 Product specification - BC817W _SER_3
BC337_3 19990415 Product specification - BC337_338_CNV_2
BC817_BC817W_BC337_6 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 06 — 17 November 2009 18 of 19
NXP Semiconductors BC817; BC817W; BC337
45 V, 500 mA NPN general-purpose transistors
11. Legal information
11.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of de vice(s) descr ibed in th is document m ay have cha nged since thi s document w as publish ed and may di ffe r in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
11.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warrant ies as to t he accuracy or completeness of
information included herein and shall have no liab ility for the consequences of
use of such information.
Short data sheet — A short dat a sheet is an extract from a full data sheet
with the same product type number(s) and tit le. A short data sh eet is intended
for quick reference only and shou ld not b e relied u pon to cont ain det ailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall pre va il.
11.3 Disclaimers
General — In formation in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give an y represent ations or
warranties, expressed or impli ed, as to the accuracy or completeness of such
information and shall have no liability for th e co nsequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all informa tion supplied prior
to the publication hereof .
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, milit ary, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liab ility for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applic ations that are described herein for any of these
products are for il lustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ra tings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other co nditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may af fect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between inf ormation in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Not hing in this document may be interpret ed or
construed as an of fer t o sell product s that is open for accept ance or the gr ant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property right s.
Export control — This document as well as the item(s) described herein
may be subject to export control regulatio ns. Export might require a prior
authorization from national authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
11.4 Trademarks
Notice: All refe renced brands, produc t names, service names and trademarks
are the property of their respective ow ners.
12. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contain s data from the objective specification for product development.
Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
NXP Semiconductors BC817; BC817W; BC337
45 V, 500 mA NPN general-purpose transistors
© NXP B.V. 2009. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of rele ase: 17 Nove mber 2009
Document identifier: BC817_BC817W_BC337_6
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
13. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 3
4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4
6 Thermal characteristics . . . . . . . . . . . . . . . . . . 4
7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5
8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11
9 Packing information . . . . . . . . . . . . . . . . . . . . 16
10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 17
11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 18
11.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 18
11.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
11.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 18
11.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 18
12 Contact information. . . . . . . . . . . . . . . . . . . . . 18
13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19